NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| IRFBC30 | International Rectifier | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) |
6 pages, |
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| IRFBC30 | International Rectifier | HEXFET Power MOSFET |
6 pages, |
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| IRFBC30 | International Rectifier | TO-220 HEXFET Power MOSFET |
1 pages, |
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| IRFBC30 | International Rectifier | TO-220 Plastic Package HEXFETs |
1 pages, |
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| IRFBC30 | N/A | FET Data Book |
1 pages, |
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| IRFBC30 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
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| IRFBC30 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| IRFBC30 | STMicroelectronics | N-CHANNEL 600V - 1.8 ? - 3.6A - TO-220 POWERMES |
8 pages, |
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| IRFBC30 | STMicroelectronics | TRANS MOSFET N-CH 600V 3.6A 3TO-220 |
8 pages, |
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| IRFBC30 | STMicroelectronics | N - CHANNEL 600V - 1.8 Ohm - 3.6A - TO-220 PowerMESH II MOSFET |
7 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: IRFBC30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRFBC30 s s s s s V DSS , ) Pulse width limited by safe operating area May 1993 1/9 IRFBC30 THERMAL DATA R thj-cas e , 820 130 50 pF pF pF IRFBC30 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol , by safe operating area Safe Operating Area Thermal Impedance 3/9 IRFBC30 Derating , On Resistance Gate Charge vs Gate-source Voltage 4/9 IRFBC30 Capacitance Variations ... | Original |
9 pages, |
IRFBC30 IRFBC30 abstract |
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| Abstract: IRFBC30 ® N - CHANNEL 600V - 1.8 - 3.6A - TO-220 PowerMESHTM MOSFET TYPE V DSS s s s s s R DS(on) ID 600 V IRFBC30 < 2.2 3.6 A TYPICAL RDS(on) = 1.8 , C 150 o C ( 1) ISD 3.6 A, di/dt 60 A/us, VDD V(BR)DSS, Tj TJMAX 1/8 IRFBC30 , Typ. 2.5 Max. Unit S 475 72 10 pF pF pF IRFBC30 ELECTRICAL CHARACTERISTICS , Operating Area Thermal Impedance 3/8 IRFBC30 Output Characteristics Transfer Characteristics ... | Original |
8 pages, |
IRFBC30 IRFBC30 abstract |
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| Abstract: IRFBC30 ® N - CHANNEL 600V - 1.8 - 3.6 A - TO-220 PowerMESHTM MOSFET TYPE V DSS s s s s s R DS(on) ID 600 V IRFBC30 < 2.2 3.6 A TYPICAL RDS(on) = 1.8 , A, di/dt 60 A/us, VDD V(BR)DSS, Tj TJMAX 1/8 IRFBC30 THERMAL DATA R t hj-ca se Rthj , 660 100 10 pF pF pF IRFBC30 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol , area Safe Operating Area Thermal Impedance 3/8 IRFBC30 Output Characteristics Transfer ... | Original |
8 pages, |
IRFBC30 SWITCHING WELDING SCHEMATIC BY MOSFET IRFBC30 abstract |
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| Abstract: IRFBC30 ® N - CHANNEL 600V - 1.8 - 3.6A - TO-220 PowerMESHTM MOSFET TYPE V DSS s s s s s R DS(on) ID 600 V IRFBC30 < 2.2 3.6 A TYPICAL RDS(on) = 1.8 , o C ( 1) ISD 3.6 A, di/dt 60 A/us, VDD V(BR)DSS, Tj TJMAX 1/8 IRFBC30 THERMAL DATA , 2.5 Max. Unit S 475 72 10 pF pF pF IRFBC30 ELECTRICAL CHARACTERISTICS (continued , Operating Area Thermal Impedance 3/8 IRFBC30 Output Characteristics Transfer Characteristics ... | Original |
8 pages, |
IRFBC30 IRFBC30 abstract |
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| Abstract: IRFBC30 N - CHANNEL 600V -1.8 fì - 3.6A - TO-220 PowerMESHâ„¢ II MOSFET TYPE Vdss RdS(oii) Id IRFBC30 600 V < 2.2 Q. 3.6 A â- TYPICAL RDs(on) = 1.8 £2 . EXTREMELY HIGH dv/dt CAPABILITY . 100% , area ( 1 ) Isd , IRFBC30 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Pa ra meter Test Conditions Min. Typ- , IRFBC30 Output Characteristics Transfer Characteristics Id (A) 8 0f,(S) 5 4 ... | OCR Scan |
7 pages, |
static charge meter DC/AC to DC smps circuit diagram IRFBC30 IRFBC30 abstract |
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| Abstract: , Greased Surface - 0.50 - R&ia Junction-to-Ambient - - 62 437 IRFBC30_ Electrical Characteristics @ Tj = , International irêRl Rectifier PD-9.482C IRFBC30 HEXFET® Power MOSFET • Dynamic dv/dt Rating • , ) © Isd , 439 IRFBC30 f = 1MHz ;iss - "gs + cgd- cds SHORTED Cric + Cn Vos, Drain-to-Source Voltage (volts) Fig , IRFBC30 -Vdd Fig 10a. Switching Time Test Circuit ... | OCR Scan |
6 pages, |
IRFBC30 IRFBC30 abstract |
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| Abstract: Rees Case-to-Sink, Flat, Greased Surface - 0.50 - R&ia Junction-to-Ambient - - 62 437 IRFBC30_ , International irêRl Rectifier PD-9.482C IRFBC30 HEXFET® Power MOSFET • Dynamic dv/dt Rating • , /ns, Vdd , Normalized On-Resistance Vs. Temperature 439 IRFBC30 f = lMHz ;iss - "gs + cgd- cds SHORTED Cric + Cn , Drain Current Vs. Case Temperature IRFBC30 -Vdd Fig 10a. Switching Time Test Circuit ... | OCR Scan |
6 pages, |
IRFBC30 482C diode 251 36A IRFBC30 abstract |
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| Abstract: Rees Case-to-Sink, Flat, Greased Surface - 0.50 - R&ia Junction-to-Ambient - - 62 437 IRFBC30_ , International irêRl Rectifier PD-9.482C IRFBC30 HEXFET® Power MOSFET • Dynamic dv/dt Rating • , /ns, Vdd , Normalized On-Resistance Vs. Temperature 439 IRFBC30 f = lMHz ;iss - "gs + cgd- cds SHORTED Cric + Cn , Drain Current Vs. Case Temperature IRFBC30 -Vdd Fig 10a. Switching Time Test Circuit ... | OCR Scan |
6 pages, |
IRFBC30 482C IRFBC30 abstract |
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| Abstract: N-Channel MOSFET ORDERING INFORMATION Package TO-220 IRFBC30PbF SiHFBC30-E3 SiHFBC30-E3 IRFBC30 SiHFBC30 SiHFBC30 , IRFBC30, SiHFBC30 SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · · , www.vishay.com 1 IRFBC30, SiHFBC30 SiHFBC30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL , S-81303-Rev. A, 16-Jun-08 IRFBC30, SiHFBC30 SiHFBC30 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , Temperature Document Number: 91110 S-81303-Rev. A, 16-Jun-08 www.vishay.com 3 IRFBC30, SiHFBC30 SiHFBC30 ... | Original |
8 pages, |
IRFBC30 SiHFBC30 IRFBC30 abstract |
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| Abstract: , Greased Surface - 0.50 - R&ja Junction-to-Ambient - - 62 437 IRFBC30_111 Electrical Characteristics @ Tj , International S Rectif ier PD-9.482C IRFBC30 HEXFET® Power MOSFET • Dynamic dv/dt Rating • , Voltage (volts) Fig 1. Typical Output Characteristics, Tc=25°C IRFBC30 10» a. E < c cd I_ 13 O â- § 10« a Q , On-Resistance Vs. Temperature 439 IRFBC30 LL 3 soo c (Ã- 9 600 CÃ- igei VGS = OV, f - 1MHz Jiss = '-â- gs + Cgd' C^g , IRFBC30 t:vdd Fig 10a. Switching Time Test Circuit tci(ofl) tf Fig 10b. Switching Time Waveforms ti ... | OCR Scan |
6 pages, |
IRFBC30 482C IRFBC30 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Datasheet N-CHANNEL 600V - 1.8 OHM - 3.6A - TO-220 POWERMESH MOSFET IRFBC30 6119 24/08/1998 8 Raw Text Format IRFBC30 N - CHANNEL 600V - 1 DS(on) I D IRFBC30 600 V < 2.2 W 3.6 A 1 2 3 TO-220 1/8 THERMAL DATA R F pF IRFBC30 2/8 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter area Safe Operating Area Thermal Impedance IRFBC30 3/8 Output Characteristics www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6119-v3.htm |
STMicroelectronics | 25/05/2000 | 9.21 Kb | HTM | 6119-v3.htm |
| Datasheet N-CHANNEL 600V - 1.8 OHM - 3.6A - TO-220 POWERMESH MOSFET IRFBC30 Document /08/1998 8 Raw Text Format IRFBC30 N - CHANNEL 600V - 1.8 W - 3.6A - TO-220 Power R DS(on) I D IRFBC30 600 V < 2.2 W 3.6 A 1 2 3 TO-220 1/8 THERMAL DATA R thj pF pF pF IRFBC30 2/8 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Thermal Impedance IRFBC30 3/8 Output Characteristics Transconductance Gate Charge vs Gate www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6119.htm |
STMicroelectronics | 20/10/2000 | 9.79 Kb | HTM | 6119.htm |
| ST | N-CHANNEL 600V - 1.8 OHM - 3.6A - TO-220 POWERMESH MOSFET IRFBC30 N-CHANNEL 600V and Raw Text Format IRFBC30 N - CHANNEL 600V - 1.8 W - 3.6 A - TO-220 PowerMESH ] MOSFET n V f = 1 MHz V GS = 0 660 100 10 pF pF pF IRFBC30 2/8 ELECTRICAL CHARACTERISTICS Thermal Impedance IRFBC30 3/8 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage Transfer Characteristics Static Drain-source On Resistance Capacitance Variations IRFBC30 4/8 Normalized www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6119-v2.htm |
STMicroelectronics | 14/06/1999 | 7.4 Kb | HTM | 6119-v2.htm |
| ST | N-CHANNEL 600V - 1.8 OHM - 3.6A - TO-220 POWERMESH MOSFET IRFBC30 N-CHANNEL 600V and Raw Text Format IRFBC30 N - CHANNEL 600V - 1.8 W - 3.6 A - TO-220 PowerMESH ] MOSFET n V f = 1 MHz V GS = 0 660 100 10 pF pF pF IRFBC30 2/8 ELECTRICAL CHARACTERISTICS Thermal Impedance IRFBC30 3/8 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage Transfer Characteristics Static Drain-source On Resistance Capacitance Variations IRFBC30 4/8 Normalized www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6119-v1.htm |
STMicroelectronics | 02/04/1999 | 7.44 Kb | HTM | 6119-v1.htm |
| STP5NB60 STP5NB60 STP5NB60 STP5NB60 TO-220 IRFBC, MTP3N60 MTP3N60 MTP3N60 MTP3N60, STP3N60 STP3N60 STP3N60 STP3N60, STP4NA60 STP4NA60 STP4NA60 STP4NA60 600 2.2 IRFBC30 TO-220 IRFBC30 600 3.6 STD2NB60-1 STD2NB60-1 STD2NB60-1 STD2NB60-1 IPAK/DPAK STD2NA60-1 STD2NA60-1 STD2NA60-1 STD2NA60-1, IRFUC20 IRFUC20 IRFUC20 IRFUC20 600 3 www.datasheetarchive.com/files/stmicroelectronics/stonline/campaign/gold/discrete/highmosf.htm |
STMicroelectronics | 20/10/2000 | 12.39 Kb | HTM | highmosf.htm |
| TO-220 IRFBC, MTP3N60 MTP3N60 MTP3N60 MTP3N60, STP3N60 STP3N60 STP3N60 STP3N60, STP4NA60 STP4NA60 STP4NA60 STP4NA60 600 2,2 IRFBC30 TO-220 IRFBC30 600 3,6 STD2NB60-1 STD2NB60-1 STD2NB60-1 STD2NB60-1 IPAK/DPAK STD2 www.datasheetarchive.com/files/stmicroelectronics/stonline/campaign/gold/discrete/highmosf-v2.htm |
STMicroelectronics | 14/06/1999 | 12.14 Kb | HTM | highmosf-v2.htm |
| STP5NB60 STP5NB60 STP5NB60 STP5NB60 TO-220 IRFBC, MTP3N60 MTP3N60 MTP3N60 MTP3N60, STP3N60 STP3N60 STP3N60 STP3N60, STP4NA60 STP4NA60 STP4NA60 STP4NA60 600 2.2 IRFBC30 TO-220 IRFBC30 600 3.6 STD2NB60-1 STD2NB60-1 STD2NB60-1 STD2NB60-1 IPAK/DPAK STD2NA60-1 STD2NA60-1 STD2NA60-1 STD2NA60-1, IRFUC20 IRFUC20 IRFUC20 IRFUC20 600 3 www.datasheetarchive.com/files/stmicroelectronics/stonline/campaign/gold/discrete/highmosf-v1.htm |
STMicroelectronics | 04/01/2001 | 12.38 Kb | HTM | highmosf-v1.htm |
| ST | N-CHANNEL 600V - 1.8 OHM - 3.6A - TO-220 POWERMESH MOSFET Datasheet N-CHANNEL 600V - 1.8 OHM - 3.6A - TO-220 POWERMESH MOSFET IRFBC30 Document Format Size Document Number Date Update Pages Portable Document Format 6119 24/08/1998 8 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/books/all/6119.htm |
STMicroelectronics | 25/05/2000 | 2.75 Kb | HTM | 6119.htm |
| ST | N-CHANNEL 600V - 1.8 OHM - 3.6A - TO-220 POWERMESH MOSFET Datasheet N-CHANNEL 600V - 1.8 OHM - 3.6A - TO-220 POWERMESH MOSFET IRFBC30 Document Format Size Document Number Date Update Pages Portable Document Format 6119 24/08/1998 8 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/6119-v1.htm |
STMicroelectronics | 25/05/2000 | 2.71 Kb | HTM | 6119-v1.htm |
| ST | N-CHANNEL 600V - 1.8 OHM - 3.6A - TO-220 POWERMESH MOSFET IRFBC30 N-CHANNEL 600V - 1.8 OHM - 3.6A - TO-220 POWERMESH MOSFET Document Number: 6119 Date Update: 24/08/98 Pages: 8 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/6119-v2.htm |
STMicroelectronics | 14/06/1999 | 0.89 Kb | HTM | 6119-v2.htm |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FCD4N60 | FCD4N60TM Buy | IRFBC30AS Buy | International Rectifier | Close | Power MOSFET | 600V N-Channel MOSFET SuperFET |
| FCD4N60 | FCD4N60TM Buy | IRFBC30ASPBF Buy | International Rectifier | Close | Power MOSFET | 600V N-Channel MOSFET SuperFET |
| FCD4N60 | FCD4N60TM Buy | IRFBC30ASTRL Buy | International Rectifier | Close | Power MOSFET | 600V N-Channel MOSFET SuperFET |
| FCD4N60 | FCD4N60TM Buy | IRFBC30ASTRLPBF Buy | International Rectifier | Close | Power MOSFET | 600V N-Channel MOSFET SuperFET |
| FCD4N60 | FCD4N60TM Buy | IRFBC30ASTRR Buy | International Rectifier | Close | Power MOSFET | 600V N-Channel MOSFET SuperFET |
| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| SPB03N60C3 Buy | IRFBC30AS Buy | International Rectifier | N-Channel MOSFETs (500V...900V) | |
| SPB03N60C3 Buy | IRFBC30S Buy | International Rectifier | N-Channel MOSFETs (500V...900V) | |
| SPP02N60C3 Buy | IRFBC30 Buy | International Rectifier | N-Channel MOSFETs (500V...900V) | |
| SPP02N60C3 Buy | IRFBC30A Buy | International Rectifier | N-Channel MOSFETs (500V...900V) | |
| SPP07N60CFD Buy | IRFBC30AL Buy | International Rectifier | N-Channel MOSFETs (500V...900V) | |
| SPP07N60CFD Buy | IRFBC30L Buy | International Rectifier | N-Channel MOSFETs (500V...900V) |
| Ixys Corp. Part | Ixys Description | Industry Part | Manufacturer | Description | Type |
| IXTP4N60P Buy | VDSS (V)=600, ID@TC=25°C(A)=4, RDS(on) max @TJ=25°C(Ohm)=1.9 | IRFBC30 Buy | International Rectifier | VDSS (V)=600, ID@TC=25°C(A)=3.6, RDS(on) max @TJ=25°C(Ohm)=2.2 | Close |
| NTE Electronics Part | Industry Part |
| STMicroelectronics Part | Industry Part | Manufacturer | Type | Description |
| Part | Similar Part | Notes |
| IRFBC30 Buy | 2SK1117 Buy | |
| IRFBC30 Buy | 2SK1402 Buy | |
| IRFBC30 Buy | 2SK1809 Buy | |
| IRFBC30 Buy | BUZ90 Buy | |
| IRFBC30 Buy | STP3NK60Z Buy | |
| IRFBC30 Buy | STP4NK60Z Buy | |
| IRFBC30A Buy | IRFBC30 Buy | |
| IRFBC30A Buy | STP3NK60Z Buy | |
| IRFBC30A Buy | STP4NK60Z Buy | |
| IRFBC30AL Buy | STB4NK60Z-1 Buy |