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IRF9630PBF Vishay Siliconix Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey Buy
IRF9630SPBF Vishay Siliconix Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF9630STRLPBF Vishay Siliconix TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power visit Digikey Buy

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Part : IRF9630PBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.4705 Price Each : $0.7884
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Part : IRF9630STRLPBF Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : 16 Best Price : $1.00 Price Each : $1.14
Part : IRF9630PBF Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : 1,800 Best Price : $0.41 Price Each : $0.4350
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Part : IRF9630 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 29,176 Best Price : $1.44 Price Each : $1.77
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Part : IRF9630PBF Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : 1,083 Best Price : £0.4530 Price Each : £1.18
Part : IRF9630SPBF. Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : 195 Best Price : £1.44 Price Each : £2.24
Part : IRF9630STRLPBF Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : 32 Best Price : £0.96 Price Each : £2.03
Part : IRF9630PBF Supplier : Vishay Intertechnology Manufacturer : New Advantage Stock : 1,640 Best Price : $0.46 Price Each : $0.49
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IRF9630 Datasheet

Part Manufacturer Description PDF Type
IRF9630 Fairchild Semiconductor 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs Original
IRF9630 Harris Semiconductor Power MOSFET Selection Guide Original
IRF9630 Intersil 6.5A, 200V, 0.800 ?, P-Channel Power MOSFETs Original
IRF9630 Toshiba Power MOSFETs Cross Reference Guide Original
IRF9630 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 6.5A TO-220AB Original
IRF9630 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF9630 International Rectifier Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) Scan
IRF9630 International Rectifier TO-220 Plastic Package HEXFETs Scan
IRF9630 International Rectifier TO-220 / TO-247 HEXFET Power MOSFETs Scan
IRF9630 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -200V. -6.5A, Pkg Style TO-220AB Scan
IRF9630 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan
IRF9630 Motorola Switchmode Datasheet Scan
IRF9630 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
IRF9630 N/A Semiconductor Master Cross Reference Guide Scan
IRF9630 N/A Shortform Data and Cross References (Misc Datasheets) Scan
IRF9630 N/A FET Data Book Scan
IRF9630 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF9630 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF9630 N/A Shortform Datasheet & Cross References Data Scan
IRF9630 Samsung Electronics 200 V, P-channel power MOSFET Scan
Showing first 20 results.

IRF9630

Catalog Datasheet MFG & Type PDF Document Tags

irf9630

Abstract: IRF9631 H A R F R I S S E M I C O N D U C T O R IRF9630, IRF9631, IRF9632, IRF9633, RF1S9630 , IRF9630 IRF9631 IRF9632 IRF9633 RF1S9630 RF1S9630SM PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB TO -262AA TO-263AB BRAND IRF9630 IRF9631 IRF9632 IRF9633 RF1S9630 RF1S9630 NOTE: When ordering, use the , Number 2224.1 IRF9630, IRF9631, IRF9632, IRF9633, RF1S9630, RF1S9630SM Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF9630, RF1S9630, RF1S9630SM Drain to Source Voltage (Note 1
-
OCR Scan
MOSFET IRF9630 TA17512 TB334 RF1S9630SM9A

irf9630

Abstract: MOSFET IRF9630 Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient MAX TYP MAX IRF9630-3 1.67 1.0 80 Unit K/W K/W K , IRF9630-3 Vso, SOUftCE-TO-ORAIN VOLTAGE (VOLTS) Typical Transcounductance Vs. Drain Current , IRF9630/9631 /9632/9633 FEATURES · · · · · · · Lower R ds (ON) Improved inductive ruggedness Fast , Improved high temperature reliability P-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF9630 , IRF9630 -2 0 0 -2 0 0 IRF9631 -1 5 0 -1 5 0 ±20 IRF9632 -2 0 0 -2 0 0 IRF9633 -1 5 0 -1 5 0
-
OCR Scan
IRF9630 mosfet IRF9630/9631 F9633 IRF9630/9631/9632/9633

irf9630

Abstract: IRFP9232 Junction-to-Ambient IRF9630-3 MAX TYP MAX 1.67 1.0 80 IRFP9230-3 1.67 0.24 40 IRF9230-3 1.67 0.1 30 Unit K , IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 FEATURES · · · · · · · , P-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF9630/IR FP9230/ IRF9230 IRF9631 /IRFP9231 , for 5 seconds Notes: (1) (2) (3) (4 ) Symbol Vdss Vdgr V gs IRF9630 IRFP9230 IRF9230 -2 0 0 -2 0 0 , Breakdown Voltage IRF9630/IRFP9230/IRF9230 IRF9632/IRFP9232/IRF9232 BVqss IR F9631/I RFP9231/I RF9231
-
OCR Scan
IRFP9232 diode 9232 IRF9630/IR IRF9231 IRF9632/IRFP9232/ IRF9232 IRF9633/IRFP9233/

irf9630

Abstract: MOSFET IRF9630 -220 IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted , IRF9630, SiHF9630 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg , -Jun-08 www.vishay.com 1 IRF9630, SiHF9630 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum , -81272-Rev. B, 16-Jun-08 IRF9630, SiHF9630 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , . Temperature Document Number: 91084 S-81272-Rev. B, 16-Jun-08 www.vishay.com 3 IRF9630, SiHF9630
Vishay Siliconix
Original
HF9630 IRF9630P HF9630-E3

diode 9232

Abstract: 1RF9630 F LÌI IRF9230/9231Z9232/9233 ^ ÏRFP9230/9231 /9232/923Ä IRF9630/9631/9632/9633 Preliminary , Part Number IRF/IRFP9230, IRF9630 IRF/IRFP9231, IRF963.1 IRF/IRFP9232, IRF9632 IRF/IRFP9233, IRF9633 , IRFP9230/9231 /9232/9233 IRF9630/9631 /9G32/9633 MAXIMUM RATINGS IBF/IRFP Characteristic Drain-Source , SAM SUNG SEMICONDUCTOR 416 L Jv ^ IRF9230/9231/9232/9233 IRFP9230/9231/9232/9233 IRF9630 , Zero Gate Voltage Drain Current 1RF9230/2 IRFP9230/2 - 2 0 0 IRF9630/2 BVuss IRF9231/3 IRFP9231/3 -
-
OCR Scan
1RF9630 9232 D0QS417 IRF9230/9231 GS435 F--13

IRF9630

Abstract: MOSFET IRF9630 of paralleling, and excellent temperature stability. The P-Channel IRF9630 device is an approxìmate , amplifiers. Product Summary Part Number Vos fDS(on) "D IRF9630 -200V 0.8Ã2 -6.5A IRF9631 -150V 0.8Ã2 -6.5A , Style T0-220AB Ail Dimensions in Millimeters and (fnches) C-361 UE D I MÃ5S4S2 aGüöbl3 3 IRF9630 , IRF9630 IRF9631 IRF9632 IRF9633 Units Vqs Drain - Source Voltage © -200 -150 -200 -150 V Vdqh Drain - , BVq33 Drain - Source Breakdown Voltage IRF9630 IRF9632 -200 - - V VQS = OV lD = -250/zA IRF9631
-
OCR Scan
c366 dsa 362 irf P-Channel MOSFET audio IRF620 X005O C-365 S54S2

IRF9630

Abstract: SiHF9630 -220AB IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C , IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · · , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 Vishay , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 , ?91000 IRF9630, SiHF9630 1200 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds +
Vishay Siliconix
Original
2002/95/EC

MOSFET IRF9630

Abstract: IRF 1630 Rugged Power MOSFETs_ IRF9630, IRF9631, IRF9632, IRF9633 File Number 2224 , IRF9630, IRF9631, IRF9632 and IRF9633 are advanced power MOSFETs designed, tested, and guaranteed to , CHARACTERISTIC IRF9630 IRF9631 IRF9632 IRF9633 UNITS Drain-Source Voltage © VDS -200 -150 -200 -150 V , MOSFETs IRF9630, IRF9631, IRF9632, IRF9633 ELECTRICAL CHARACTERISTICS, At T- = 25° C (Unless Otherwise , BVoss IRF9630 IRFS632 -200 - - V Vgs = 0 V lo = -250 uA IRF9631 IRF9633 -150 - - V Gate Threshold
-
OCR Scan
IRF 1630 IRP9 irf98 transistor IRF 630 JEDECTO-220AB 92CS-39328 92CS-43313 92CS- 92CS-43316 B2CS-4330S

IRF9630

Abstract: 5a,200v power diode IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are , IRF9630 TO-220AB RF1S9630SM TO-263AB D IRF9630 RF1S9630 G NOTE: When ordering, use , ) ©2002 Fairchild Semiconductor Corporation DRAIN (FLANGE) GATE SOURCE IRF9630, RF1S9630SM Rev. B IRF9630, RF1S9630SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source , . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRF9630, RF1S9630SM -200 -200 -6.5 -4
Fairchild Semiconductor
Original
5a,200v power diode MOSFET IRF9630 Datasheet

IRF9630

Abstract: RF1S9630 IRF9630, RF1S9630SM Data Sheet July 1999 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs , Components to PC Boards" Symbol BRAND IRF9630 TO-220AB TO-263AB D IRF9630 RF1S9630SM , Fairchild Semiconductor Corporation IRF9630, RF1S9630SM Rev. A IRF9630, RF1S9630SM Absolute Maximum , . . . . Tpkg IRF9630, RF1S9630SM -200 -200 -6.5 -4 -26 ±20 75 0.6 500 -55 to 150 , Internal Devices Inductances D LD G LS S IRF9630, RF1S9630SM Rev. A IRF9630, RF1S9630SM
Fairchild Semiconductor
Original

IRF9630

Abstract: IRF9630PBF IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · · , G D D P-Channel MOSFET ORDERING INFORMATION Package TO-220 IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted , Number: 91084 S-81272-Rev. B, 16-Jun-08 www.vishay.com 1 IRF9630, SiHF9630 Vishay Siliconix , -Jun-08 IRF9630, SiHF9630 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 -
Vishay Siliconix
Original

irf9630

Abstract: Case-to-SInk Junction-to-Ambient MAX TY P MAX IRF9630-3 1.67 1.0 80 IRFP9230-3 1 67 0.24 40 Unit K/W K/W K/W , IRF9630/9631/9632/9633 IRFP9230/9231 /9232/9233 FEATURES · · · · · · · Lower R d s < on> Improved , qs Id Id Id m Ig m IRF9630 IRFP9230 -200 - 200 IRF9631 IRFP9231 -1 5 0 -1 5 0 ±20 IRF9632 , IRF9630/9631/9632/9633 IRFP9230/9231 /9232/9233 ELECTRICAL CH A RA CTERIST IC S Symbol Characteristic , . junction temperature 243 ELECTRONICS IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 P-CHANNEL
-
OCR Scan
IRFP9233 IRFP9230/9231Z9232/9233

irf9630

Abstract: RF1S9630 IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are , Boards" Symbol BRAND IRF9630 TO-220AB RF1S9630SM TO-263AB D IRF9630 RF1S9630 G , 407-727-9207 | Copyright © Intersil Corporation 1999 IRF9630, RF1S9630SM Absolute Maximum Ratings TC = , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRF9630 , LD G LS S IRF9630, RF1S9630SM Source to Drain Diode Specifications PARAMETER SYMBOL
Intersil
Original
ISO9000

1RF9630

Abstract: .) THERMAL RESISTANCE IRF9630-3 IRFP9230-3 Unit Rttijc Junction-to-Case MAX 1.67 1 67 , SAMSUNG ELECTRONICS INC b4E D â  7 ^ 4 1 4 2 0Q12277 30b « S M G K IRF9630/9631 /9632 , temperature reliability IRF9630/9631/9632/9633 TO-3P PRODUCT SUMMARY Part Number Vos R0S(on) Id IRF9630/IRFP9230 -2 0 0 V o an -6 .5 A IRF9631 /IRFP9231 -1 5 0 V o an - 6 , 5A IRFP9230/9231 /9232/9233 MAXIMUM RATINGS Symbol IRF9630 IRFP9230 IRF9631 IRFP9231
-
OCR Scan
IRF9630/IRFP9230 IRF9632/IRFP9232 IRF9633/IRFP9233 QQ122

IRF9630

Abstract: MOSFET IRF9630 IRF9630/9631 P-CHANNEL POWER MOSFETS FEATURES â'¢ Lower Rds(ON) â  Improved inductive ruggedness â , (on) lo IRF9630 -200V 0.8 n -6.5A IRF9631 -150V 0.8 il -6.5A ABSOLUTE MAXIMUM RATINGS Characterìstic Symbol IRF9630 IRF9631 Unit Drain-Source Voltage (1) Vdss -200 -150 Vdc Drain-Gate Voltage (Rgs=1 .OMfl , =-50V, Rg=25ì1 , Starting Tj=25°C 392 ^¡fiflMiijity ^^^^ELECTRONICS â  7^4142 DG20^31 T2T â  IRF9630 , Characteristic Min TVp Max Units Test Conditions BVdss Drain-Source Breakdown Voltage IRF9630 IRF9631 -200 -150 -
-
OCR Scan
DURAT10N
Abstract: IRF9630, RF1S9630SM Semiconductor April 1999 Data Sheet -6.5A, -200V, 0.800 Ohm , IRF9630 TO-220AB IRF9630 RF1S9630SM TO-263AB RF1S9630 NOTE: When ordering, use the , -H A R R IS or 407-727-9207 | C opyright © Harris C orporation 1999 IRF9630, RF1S9630SM Absolute , . T.J t STG IRF9630, RF1S9630SM -200 -200 -6.5 -4 -26 ±20 75 0.6 500 -55 to 150 , 1.67 °C /W - - 80 °C /W IRF9630, RF1S9630SM Source to Drain Diode Specifications -
OCR Scan

irf9630

Abstract: IRF9632 o . SOURCE >DRAIN 'GATE D escription The IRF9630, IRF9631, IR F9632 and IR F9633 are advanced , 0.8, V q s - OV, T q s* + 1 2 5 °C On-State Drain Current (Note 2) IRF9630, IRF9631 IRF9632, IRF9633 Static Drain-Source O n-State Resistance (Note 2) IRF9630, IRF9631 IRF9632, IRF9633 Forward , ) 5 -8 6 IRF9630, IR F 9 6 3 1, IRF9632, IR F9633 V D s - D R A IN -T O -S O U R C E V O LT A G , IRF9630, IR F 9 6 3 1, IRF9632. /R F9633 V s D . SO U R C C T O O R A IN V O LT A G E (V O L T S
-
OCR Scan
F9630 92CS-43312 92CS-43270 92CS-43284 92CS-433U

IRF9630

Abstract: MOSFET IRF9630 Case-to-Sink, Flat, Greased Surface â'" 0.50 â'" Rbja Junction-to-Ambient â'" â'" 62 371 IRF9630_ , International SS Rectifier PD-9.352F IRF9630 HEXFET® Power MOSFET â'¢ Dynamic dv/dt Rating , ) Fig 1. Typical Output Characteristics, Tc=25°C IRF9630 -Vds, Drain-to-Source Voltage (volts) Fig 2 , On-Resistance Vs. Temperature 373 IRF9630 I«R Vgs ^iss ~ '-gs ov, f = 1MHz * Cgs + cgd. Cds SHORTED , , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature IRF9630 Ro Vds >- 4.;Vdd
-
OCR Scan
T0-220
Abstract: INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630 ABSOLUTE MAXIMUM , IRF9630, SiHF9630 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg , FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 Vishay Siliconix THERMAL RESISTANCE RATINGS , FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 Vishay Siliconix TYPICAL CHARACTERISTICS (25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 Vishay Siliconix
Original
2011/65/EU
Abstract: -220AB IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C , IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â'¢ â , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 , www.vishay.com/doc?91000 IRF9630, SiHF9630 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 1200 VGS = 0 V, f = 1 MHz Ciss Vishay Siliconix
Original
JS709A
Abstract: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â'¢ â , -220AB IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 , www.vishay.com/doc?91000 IRF9630, SiHF9630 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 1200 VGS = 0 V, f = 1 MHz Ciss Vishay Intertechnology
Original
Abstract: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â'¢ â , -220AB IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 , www.vishay.com/doc?91000 IRF9630, SiHF9630 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 1200 VGS = 0 V, f = 1 MHz Ciss Vishay Siliconix
Original
Showing first 20 results.