IRFNJ9130 IRF9130SMD05 -100V SMD05 -100A/

IRF9130SMD05 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41

IRFNJ9130 IRFNJ9130 IRF9130SMD05 IRF9130SMD05 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) PCHANNEL POWER MOSFET FOR HIREL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400) 3.05 (0.120) 0.127 (0.005) -100V -100V -11A 0.30 FEATURES 0.127 (0.005) 0.127 (0.005) 16 PLCS 0.50(0.020) 0.50 (0.020) max. 7.26 (0.286) · HERMETICALLY SEALED · SIMPLE DRIVE REQUIREMENTS SMD05 SMD05 (TO-276AA) · LIGHTWEIGHT · SCREENING OPTIONS AVAILABLE IRF9130SMD05 IRF9130SMD05 PAD1 = GATE · ALL LEADS ISOLATED FROM CASE PAD 2 DRAIN PAD3 = SOURCE IRFNJ9130 IRFNJ9130 PAD1 = SOURCE PAD 2 = DRAIN PAD3 = GATE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate Source Voltage ±20V ID Continuous Drain Current @ Tcase = 25°C -11A ID Continuous Drain Current @ Tcase = 100°C -7A IDM Pulsed Drain Current -50A PD Power Dissipation @ Tcase = 25°C 45W Linear Derating Factor 0.36W/°C TJ , Tstg Operating and Storage Temperature Range 55 to 150°C RJC Thermal Resistance Junction to Case 2.8°C/W max. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Document Number 5544 Issue 1 IRFNJ9130 IRFNJ9130 IRF9130SMD05 IRF9130SMD05 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS Temperature Coefficient of TJ RDS(on) VGS = 0 ID = -1mA Min. Typ. Max. -100 Reference to 25°C V -0.1 V / °C Breakdown Voltage ID = -1mA Static Drain Source OnState VGS = -10V ID = -7A 0.30 Resistance VGS = -10V ID = -11A 0.35 VDS = VGS ID = -250µA -2 VDS -15V IDS = -7A 3 VGS = 0 VDS = -80V -25 TJ = 125°C -250 VGS(th) Gate Threshold Voltage Unit -4 V )( BVDSS STATIC ELECTRICAL RATINGS Drain Source Breakdown Voltage Test Conditions gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate Source Leakage VGS = -20V -100 IGSS Reverse Gate Source Leakage VGS = 20V 100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 860 Coss Output Capacitance VDS = 25V 350 Crss Reverse Transfer Capacitance f = 1MHz 125 Qg Total Gate Charge VGS = -10V 29 Qgs Gate Source Charge VDS = -50V 7.1 Qgd Gate Drain ("Miller") Charge ID = -11A 21 td(on) TurnOn Delay Time VDD = -50V 60 tr Rise Time ID = -11A 140 td(off) TurnOff Delay Time RG = 7.5 140 tf Fall Time 140 IS SOURCE DRAIN DIODE CHARACTERISTICS Continuous Source Current -11 ISM Pulse Source Current -50 VSD Diode Forward Voltage trr Reverse Recovery Time IS = -11A Qrr Reverse Recovery Charge di / dt -100A/ -100A/µs VDD 150V IS = -11A TJ = 25°C VGS = 0 TJ = 25°C S( µA nA pF nC ns A -4.7 V 250 ns 3 µC Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Document Number 5544 Issue 1