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IRF8313PBF Infineon Technologies AG Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 visit Digikey Buy
IRF8313TRPBF Infineon Technologies AG Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 visit Digikey Buy

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IRF831 Datasheet

Part Manufacturer Description PDF Type
IRF831 Toshiba Power MOSFETs Cross Reference Guide Original
IRF831 Fairchild Semiconductor N-Channel Power MOSFETs, 4.5 A, 450V/500V Scan
IRF831 FCI POWER MOSFETs Scan
IRF831 Frederick Components Power MOSFET Selection Guide Scan
IRF831 General Electric Power Transistor Data Book 1985 Scan
IRF831 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. Scan
IRF831 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF831 International Rectifier N-Channel Power MOSFETs Scan
IRF831 International Rectifier TO-220 HEXFET Power MOSFET Scan
IRF831 Motorola Switchmode Datasheet Scan
IRF831 Motorola European Master Selection Guide 1986 Scan
IRF831 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan
IRF831 N/A Shortform Transistor PDF Datasheet Scan
IRF831 N/A Shortform Datasheet & Cross References Data Scan
IRF831 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF831 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF831 N/A Semiconductor Master Cross Reference Guide Scan
IRF831 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
IRF831 N/A FET Data Book Scan
IRF831 National Semiconductor N-Channel Power MOSFETs Scan
Showing first 20 results.

IRF831

Catalog Datasheet MFG & Type PDF Document Tags

IRF830

Abstract: IRF831 IRF830/FI IRF831/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS R DS( on) ID IRF830 IRF830FI TYPE 500 V 500 V < 1.5 < 1.5 4.5 A 3A IRF831 IRF831FI 450 V 450 , o C (·) Pulse width limited by safe operating area May 1993 1/10 IRF830/FI - IRF831 , IRF831/831FI Min. Typ. Max. 500 450 Unit V V Zero Gate Voltage V DS = Max Rating , . 2.7 3.4 600 100 40 Max. Unit S 800 130 55 pF pF pF IRF830/FI - IRF831/FI
STMicroelectronics
Original
IRF831/FI ISOWATT220 830FI 831FI P011G

irp833

Abstract: JRF830 File Number 1582 Power MOS Field-Effect Transistors -Standard Power MOSFETs IRF830, IRF831 ,   Majority carrier device go-; TERMINAL DIAGRAM The IRF830, IRF831, IRF832 and IRF833 are n-channel , . (1.6mm) from ease for 10s) °c 3-199 Standard Power MOSFETs -â'"â â'"- IRF830, IRF831, IRF832 , IRF831 IRP833 4 SO - _ V lD « 250|iA VQSlth) Gate Threshold Voltage ALL 2.0 - 4 0 V VDS * VGS' 'D  , IRF830 IRF831 4.5 - - A VOS > 'Dion) x RDSIon) max.' VGS * 10V IRF832 IRF833 4.0 - - A RDS
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OCR Scan
RF832 JRF830 3203 MOSFET F832 IAF830 mosfet jrf830 92CS-3S52 JRF831 JBF83
Abstract: IRF830, IRF831, IRF832, IRF833 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power , BRAND IRF830 TO -220AB IRF830 IRF831 TO -220AB IRF831 IRF832 TO -220AB IRF832 , Number 1582.2 IRF830, IRF831, IRF832, IRF833 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF830 IRF831 IRF832 IRF833 UNITS Drain to Source Voltage (Note 1 , AX UNITS IRF830, IRF832 500 . . V IRF831, IRF833 450 - - V 2.0 -
OCR Scan
TA17415 TB334

IRF830

Abstract: IRF8331 IRF830, IRF831, IRF832, IRF833 S E M I C O N D U C T O R 4.0A and 4.5A, 450V and 500V, 1.5 , PACKAGE D BRAND IRF830 TO-220AB IRF831 TO-220AB IRF831 IRF832 TO , . Copyright © Harris Corporation 1998 5-1 File Number 1582.2 IRF830, IRF831, IRF832, IRF833 , 334 . . . . . . . . . . . .Tpkg IRF831 IRF832 IRF833 UNITS 500 500 4.5 3.0 18 ±20 , IRF830, IRF832 500 - - V IRF831, IRF833 450 - - V 2.0 - 4.0 V
Harris Semiconductor
Original
IRF8331 IRF833 harris
Abstract: 11/29/12 IRF831 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array , ; N-Ch; Enhancement IRF831 Availability Buy IR F831 at our online store ! Language Translator , can supply your de m and for discontinue d passive and active com pone nts! IRF831 Information Products Se arch for Parts R e que st a Q uote Ne w Products Parts W atch Te st House s IRF831 , /?ss_pn=IRF831 1/2 11/29/12 IRF831 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510 2N1711

C312 diode

Abstract: diode C309 Data Sheet No. PD-9.311J INTERNATIONAL RECTIFIER I^R REPETITIVE AVALANCHE AND dv/dt RATED1 IRF831 , energy pulse circuits. Product Summary Part Number bvdss RDS(on) id IRF830 500V 1.5à 4.5A IRF831 450V , , ie. 2A3B C-309 IRF830, IRF831, IRF832, IRF833 Devices Absolute Maximum Ratings Parameter IRF830, IRF831 IRF832, IRF833 Units ID @ TC = 25°C Continuous Drain Current 4.5 4.0 A ID @ TC = 100 , \foltage IRF830 IRF832 500 - - V VQS = 0V, lD = 250 & IRF831 IRF833 450 ^DS(on) Static
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OCR Scan
C312 diode diode C309 diode C315 9311J AN975 power MOSFET IRF830 C-315 C-316

IRF830

Abstract: reliability irf830 PRODUCT SUMMARY Part Number IRF830 IRF831 IRF832 IRF833 Vds 500V 450V 500V 450V RoS , ) Tj , Symbol Vdss VoGR IRF830 500 500 4.5 3.0 18 IRF831 450 450 ±20 4.5 3.0 18 ± 1 .5 280 , Drain-Source Breakdown Voltage IRF830/IRF832 IRF831/IRF833 VgS (H i ) Gate Threshold Voltage Igss Igss Idss , Current (2) IRF830/IRF831 IRF832/IRF833 Static Drain-Source On-State Resistance (2) IRF830/IRF831 IRF832 , Source Current (Body Diode) IRF830/IRF831 IRF832/IRF833 Ism Pulse Source Current(Body Diode)(3) IRF830
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OCR Scan
IRF830-3 reliability irf830 IRF830.831 diode on 832 IRF830/831/832/833

IRF830

Abstract: IRFP430 IRF830/IRFP430 500V 1,5ft 4.5A IRF831 /IRFP431 450V 1,5n 4.5A IRF832/IRFP432 500V 2.on 4.OA IRF833/IRFP433 450V 2.on 4.OA MAXIMUM RATINGS Characteristics Symbol IRF830 IRFP430 IRF831 IRFP431 IRF832 , /IRFP432 500 - - V VGS = 0V Id=250HA IRF831 /IRFP431 IRF833/IRFP433 450 - - V VGS(th) Gate Threshold , Drain-Source Current (2) IRF830/IRFP430 4.5 IRF831 /IRFP431 - - Vds»9V, VGS=10V IRF832/IRFP432 i IRF833/IRFP433 - - A RDS(on) Static Drain-Source On-State Resistance (2) IRF830/IRFP430 IRF831 /IRFP431 - 0.95
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OCR Scan
rectifier 832 irfp4303 IRFP430/431Z432/433 IRFP432 IRFP433 IRFP430/431/432/433 GG173E5
Abstract: * IRF830 IRF831 IRF832 IRF833 HEXFET TRANSISTORS Q r X) N -C H A N N E L 500 Volt, 1.5 Ohm , bvqss F*DS(on) 'd IRF830 500V 1.511 4.5A IRF831 450V 1.5Ã2 4.5A IRF832 , â¡ IRF830, IRF831, IRF832, IRF833 Devices INTERNATIONAL R E C T IFIE R A b s o lu te M a x im u m R a tin g s ' Barametef T - 3 9 - H IRF832, IRF833 IRF830, IRF831 Units , ) â â¡(on) On-State Drain Current ® Min. 500 450 IRF830 IRF831 - 1.4 1.5 - -
OCR Scan
T-39-11 C-314 554S2 RF831 RP832 RF833

1rf830

Abstract: VN64GA 450 0.85 8.0 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 4.5 75 VN4501D 450 1.5 4.5 75 IRF831 , 1.4 20 VN2406D Siliconix 1-29 IRF430 - IRF431 - IRF432 - IRF433 IRF830 â  IRF831 â  IRF832 â , IRF831 450V TO-220AB IRF832 500V 2.012 4A IRF833 450V .jj ABSOLUTE MAXIMUM RATINGS (Tc = 25Â , BVdss Drain-Source Breakdown IRF430, 2 IRF830, 2 500 V Vos = 0. ID = 250fiA IRF431, 3 IRF831, 3 450 , (Note 1) IRF431, 3 IRF831, 3 4.0 Static Drain-Source On-State rDS(on) Resistance IRF430, 1 IRF830
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OCR Scan
IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 1rf830 VN64GA 2N6658 IRF120 IRF122

1rf830

Abstract: 5002A 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 4.5 75 VN4501D 450 1.5 4.5 75 IRF831 450 2.0 4.0 75 , Siliconix 1-29 IRF430 - IRF431 - IRF432 - IRF433 IRF830 â  IRF831 â  IRF832 â  IRF833 Siliconix 500V , 450V TO-3 IRF432 500V 2.0B 4A IRF433 450V 1RF830 500V 1.5Ã 4.5A IRF831 450V TO , = 250fiA IRF431, 3 IRF831, 3 450 ^GS(th) Gate Threshold Voltage All 2 4 VDS=VGS. ID=1 mA , Current IRF430, 1 IRF830, 1 4.5 A VDS = 25V, VGS = 10V (Note 1) IRF431, 3 IRF831, 3 4.0 Static
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OCR Scan
IRF450 IRF840 IRF440 VNP002A IRF820 IRF350 5002A IRF340 IRF740 VN5001D/IRF830

IRF833

Abstract: IRF832 -39- IRF830, IRF831, IRF832, IRF833 Power MOS Field-Effect Transistors File Number 1582 N-Channel , â  High input impedance â  Majority carrier device The IRF830, IRF831, IRF832 and IRF833 are , , IRF831, IRF832, IRF833 Electrical Characteristics @Tc = 25°C (Unless Otherwise Specified) Pararrwe , ) On-State Orain Currant © IRF830 IRF831 4.6 - - A V0S > 'Dlonl " ROSIonl max.' VGS " ,ov IRF832 IRF833 4.0 - - A fiDSlon) Static Orain-Source On-Stata Resistance ® IRF830 IRF831 - 1.3 1.5 0 V0S " 10V
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OCR Scan
1RF831 w sa 45a diode 30010 T-39- TQ-220AB

.2TY

Abstract: S235N SGS-THOMSON ilLIOT®«! IRF830/FI IRF831/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS , IRF830/FI - IRF831/FI THERMAL DATA T O -2 2 0 Rthj-case Rthj-amb Rthc s Ti T h e rm a l R e s is ta n c , -m 0 M S 0 N 232 " 7# MiCSM SLiICtrH M IÎC * IRF830/FI - IRF831/FI ELECTRICAL , IRF830/FI - IRF831/FI Thermal Impedance for ISOWATT22Q Thermal Impedance for TO-220 1 0 "' 1CT5 , SCS-THOMSON IRF830/FI - IRF831/FI T ransfer Characteristics T ransconductance Static Drain-source
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OCR Scan
S235N

IRF830.831

Abstract: Irf830 SUMMARY Part Number V ds RDSfon) Id IRF830 500V 1.5 0 4.5A IRF831 450V 1.5 0 4.5A ABSOLUTE MAXIMUM RATINGS Symbol IRF830 IRF831 Unit Drain-Source Voltage (1 , Drain-Source Breakdown Voltage BVdss VG S(tti) IRF830 500 IRF831 450 Gate Threshold Voltage
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OCR Scan
IRF830/831

IRF830

Abstract: IRF 450 MOSFET u ty Cycle * 2%. (1) A d d 0.1 V fo r IRF830 and IRF831. Ld 3.5 (Typ.» 4 5 (Typ) - nH Ls , MOTOROLA TECHNICAL DATA SEMICONDUCTOR IRF830 IRF831 IRF832 IRF833 TMOS POWER FETs 4 and 4.5 , g ssf Symbol M in M ax Unit V(BR)DSS IRF831, IRF833 IRF830, IRF832 dss - - 0.2 1 , Threshold Voltage iv d s VGS(th) r DS lonl IRF830, IRF831 IRF832, IRF833 'D(on) IRF830, IRF831 IRF832, IRF833 9FS IRF830, IRF831 IRF832, IRF833 2 4 Vdc Ohm = v g s - id = 0 2 5 m A > 10 Vdc- !0 =
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OCR Scan
IRF 450 MOSFET LG diode 831 TRANSISTOR mosfet IRF830 transistor irf830 MTM4N45 MTP4N45
Abstract:   HAS ÌRF830, IRF831. ¡RF832, IRF833 IRF830R, IRF831R, /RF832R, /RF833R Electrical , - - V 2.0 V D S = V GS> 'D = 250|iA _ 450 IRF831 /833, IRF831R /833R - , ôlfl â  HAS IRF830, IRF831, /RF832, /RF833 IRF830R, IRF831R, IRF832R, IRF833R i D o r a in , â'¢ Linear Transfer Characteristics â'¢ High Input Impedance Description The IRF830, IRF831 , . IRF830R, IRF831R, IRF832R and IRF833R types are advanced power M O S FET s designed, tested, and -
OCR Scan
M3D5E71 00S40L IRF830/Q31/832/833 IRF830R/831R/832R/833R JRF831R

IRF830

Abstract: IRF830FI 4.5 A 3 A IRF831 IRF831FI 450 V 450 V < 1.5 £2 < 1.5 £2 4.5 A 3 A â  TYPICAL RDS(on) = 1.35 Q â , 7^237 00HS7Db SÃD â  SGTH SCS-THOMSON IRF830FI ilLJ©â"¢Â«! IRF831/FI N - CHANNEL , )dss Drain-source Breakdown Voltage Id = 250 nA Ves = 0 for IRF830/830FI for IRF831/831FI 500 450 V V , IRF830/FI - IRF831/FI Thermal Impedance for TO-220 7^237 0D4S7Cn 21T â SGTH Thermal Impedance for , 20 30 40 V (V) SGS-THOMSON r m TTETEB? 0D4571Q T31 â SGTH IRF830/FI - IRF831/FI Transfer
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OCR Scan
GC237 IRF 830 00HS7D IRF830/FI-IRF831/FI DD4S707 DD45711 4S71S

IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF742 IRF743 IRF820 IRF821 IRF822 IRF823 IRF830 IRF831 IRF832 IRF833 IRF840 IRF841 SAMSUNG Direct , IRF731 IRF732 IRF733 IRF740 IRF741 IRF742 IRF743 IRF820 IRF821 IRF822 IRF823 IRF830 IRF831 IRF832 IRF833 , IRF720 IRF9631 IRF9631 IRF9520 IRF9520 CROSS REFERENCE GUIDE SAMSUNG Direct Re placement IRF831 , IRFP150 IRFP252 IRFP352 IRFP452 IRFP252 IRFP352 IRFP452 IRFP440 IRFP440 IRF822 IRF842 IRF830 IRF831 IRF832 , IRF730 IRF732 IRF831 IRF833 IRF830 IRF732 SSP6N60 SSP5N60 IRF9513 IRF9513 IRF9513 IRF9513 IRF9512 IRF9512
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OCR Scan
IRF9613 IRFP333 VN0106N5 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF510 IRF511 IRF512 IRF513 IRF520 IRF521

IRF830 equivalent

Abstract: IRF9520 equivalent 10A IRF830 â  IRF831 â  IRF832 â  IRF833 Siliconix 500V N-Channel Enhancement Mode MOSPOWER These , IRF433 450V 1RF830 500V 1.5Ã 4.5A IRF831 450V TO-220AB IRF832 500V 2.012 4A IRF833 450V , = 250fiA IRF431, 3 IRF831, 3 450 ^GS(th) Gate Threshold Voltage All 2 4 VDS=VGS. ID=1 mA , Current IRF430, 1 IRF830, 1 4.5 A VDS = 25V, VGS = 10V (Note 1) IRF431, 3 IRF831, 3 4.0 Static , , VN5002A, VN5002D, IRF430, IRF431, IRF432.IRF433, IRF830, IRF831, IRF832, IRF833 Temperature Effects on
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OCR Scan
IRF9130 IRF9131 IRF9132 IRF9133 IRF9230 IRF9231 IRF830 equivalent IRF9520 equivalent 10A ibf830 IRF450 equivalent

1rf830

Abstract: ibf830 IRF830 â  IRF831 â  IRF832 â  IRF833 Siliconix 500V N-Channel Enhancement Mode MOSPOWER These , IRF433 450V 1RF830 500V 1.5Ã 4.5A IRF831 450V TO-220AB IRF832 500V 2.012 4A IRF833 450V , = 250fiA IRF431, 3 IRF831, 3 450 ^GS(th) Gate Threshold Voltage All 2 4 VDS=VGS. ID=1 mA , Current IRF430, 1 IRF830, 1 4.5 A VDS = 25V, VGS = 10V (Note 1) IRF431, 3 IRF831, 3 4.0 Static , , VN5002A, VN5002D, IRF430, IRF431, IRF432.IRF433, IRF830, IRF831, IRF832, IRF833 Temperature Effects on
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OCR Scan
IRF452 IRF442 VN5001A IRF420 IRF422 IRF8301 VN1200A IRF451

IRFP430

Abstract: IRF830.831 IRF830/831/832/833 IRFP430/431/432/433 FEATURES · L o w e r R d s (ON) N-CHANNEL POWER MOSFETS TO -220 · · · · · · Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability PRODUCT SUMMARY Part N um ber Vos RDSion) Id IRF830/IRFP430 IRF831 IRFP431 -" " 500V , IRF831 IRFP431 450 450 IRF832 IRFP432 500 500 IRF833 IR FP433 450 450 Unit Vdc Vdc Vdc V dss
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OCR Scan
F833IR IRFP430/431M32/433

IRF732P

Abstract: IRF722P IRF823 IRF823FI IRF823P IRF830 IRF830 IRF830P IRF831 IRF831FI IRF831P IRF832 IRF832FI IRF832P IRF833 S , IRF823FI IRF823FI IRF830 IRF830 IRF830FI IRF831 IRF831FI IRF831FI IRF832 IRF832FI IRF832FI IRF833 S G S , MTP3N60FI SGSP351 SGSP351 SGSP317 SGSP317 IRF733 IRF732 IRF831 IRF830 SGSP351 SGSP351 IRF620 IRF620 IRF620 , IRF141 SGSP351 SGSP351 SGSP317 SGSP317 IRF821 IRF820 SGSP358 IRF733 IRF732 IRF831 IRF830 IRF743 IRF742
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OCR Scan
2SK295 SGSP321 SGSP367 IRF540FI SGSP381 BUZ71 IRF732P IRF722P SGSP3055 1rfp450 MTP20N10 irf522p 2SK296 2SK308 2SK310 2SK311 2SK312
Showing first 20 results.