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IRF830ALPBF Vishay Siliconix Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 visit Digikey Buy
IRF830A Vishay Siliconix Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN visit Digikey Buy
IRF830SPBF Vishay Siliconix Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF830PBF Vishay Siliconix Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey Buy
IRF830APBF Vishay Siliconix Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey Buy
IRF830ASTRLPBF Vishay Siliconix Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy

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IRF830 Datasheet

Part Manufacturer Description PDF Type
IRF830 Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Original
IRF830 Bay Linear POWER MOSFET Original
IRF830 Harris Semiconductor Power MOSFET Selection Guide Original
IRF830 Intersil 4.5A, 500V, 1.500 ?, N-Channel Power MOSFET Original
IRF830 On Semiconductor Power Field Effect Transistor Original
IRF830 Philips Semiconductors PowerMOS transistor Avalanche energy rated Original
IRF830 SI Semiconductors N-Channel Power MOSFET Original
IRF830 STMicroelectronics N-CHANNEL 500V - 1.35 ? - 4.5A - TO-220 POWERME Original
IRF830 STMicroelectronics N - CHANNEL 500V - 1.35W - 4.5A - TO-220 PowerMESH MOSFET Original
IRF830 Toshiba Power MOSFETs Cross Reference Guide Original
IRF830 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.5A TO-220AB Original
IRF830 Fairchild Semiconductor N-Channel Power MOSFETs, 4.5 A, 450V/500V Scan
IRF830 Fairchild Semiconductor Advanced Power MOSFET Scan
IRF830 FCI POWER MOSFETs Scan
IRF830 Frederick Components Power MOSFET Selection Guide Scan
IRF830 General Electric Power Transistor Data Book 1985 Scan
IRF830 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. Scan
IRF830 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF830 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 500V, 4.5A, Pkg Style TO-220AB Scan
IRF830 International Rectifier TO-220 Plastic Package HEXFETs Scan
Showing first 20 results.

IRF830

Catalog Datasheet MFG & Type PDF Document Tags

IRF830

Abstract: IRF8331 IRF830, IRF831, IRF832, IRF833 S E M I C O N D U C T O R 4.0A and 4.5A, 450V and 500V, 1.5 , PACKAGE D BRAND IRF830 TO-220AB IRF831 TO-220AB IRF831 IRF832 TO-220AB IRF832 IRF833 TO-220AB G IRF830 IRF833 S NOTE: When ordering, include the entire , . Copyright © Harris Corporation 1998 5-1 File Number 1582.2 IRF830, IRF831, IRF832, IRF833 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF830 Drain to Source Voltage (Note
Harris Semiconductor
Original
TB334 TA17415 IRF8331 IRF833 harris

IRF830

Abstract: IRFP430 Symbol Characteristic IRF830-3 IRFP430-3 Unit Rthjc Junction-to-Case MAX- 1.67 1.67 K/W Rihcs , SAMSUNG ELECTRONICS INC IRF830/831/832/833 IRFP430/431Z432/433 h?E D m 7tìb414e 0017317 37T â , IRF830/IRFP430 500V 1,5ft 4.5A IRF831 /IRFP431 450V 1,5n 4.5A IRF832/IRFP432 500V 2.on 4.OA IRF833/IRFP433 450V 2.on 4.OA MAXIMUM RATINGS Characteristics Symbol IRF830 IRFP430 IRF831 IRFP431 IRF832 , 210 SAMSUNG ELECTRONICS INC b7E J> â  7^4142 0G1731A 20S IRF830/831Z832/833 N-CHANNEL IRFP430/431
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OCR Scan
rectifier 832 diode on 832 irfp4303 IRF830.831 IRF830/831/832/833 IRF830/IRFP430 IRFP432 IRFP433 IRFP430/431/432/433

irf830

Abstract: TO-220 IRF830 Features Extremely high dv/dt capability Low Gate Charge Qg results in VDSS , 1.2 Description The IRF830 is a new generation of high voltage N­Channel enhancement mode power , superior switching performance, withstand high IRF830 TOP View (TO220) energy pulse in the avalanche , IRF830 Electrical Characteristics @TJ=25 C(unless otherwise specified) Parameter V(BR)DSS Min , °C 2 IRF830 Typical Performance Characteristics Figure 1 On-Region Characteristics Figure 3
Silikron Semiconductor
Original
TO-220 Single power supply IRF830 APPLICATION irf830 datasheet power MOSFET IRF830 IRF830 equivalent 200A/

IRF830.831

Abstract: Irf830 N-CHANNEL POWER MÛSFETS IRF830/831 FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Lower R ds , SUMMARY Part Number V ds RDSfon) Id IRF830 500V 1.5 0 4.5A IRF831 450V 1.5 0 4.5A ABSOLUTE MAXIMUM RATINGS Symbol IRF830 IRF831 Unit Drain-Source Voltage (1 , ! QG2fl231 bS3 N-CHANNEL POWER MOSFETS IRF830/831 ELECTRICAL CHARACTERISTICS Symbol , Drain-Source Breakdown Voltage BVdss VG S(tti) IRF830 500 IRF831 450 Gate Threshold Voltage
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OCR Scan
IRF830/831

irf830

Abstract: any circuit using irf830 IRF830 ® N - CHANNEL 500V - 1.35 - 4.5A - TO-220 PowerMESHTM MOSFET TYPE V DSS s s s s s R DS(on) ID 500 V IRF830 < 1.5 4.5 A TYPICAL RDS(on) = 1.35 , Characterized in this Datasheet August 1998 1/8 IRF830 THERMAL DATA R t hj-ca se Rthj -amb R thc , VGS = 0 Min. Typ . 2.5 Max. Un it S 610 120 10 pF pF pF IRF830 , Impedance 3/8 IRF830 Output Characteristics Transfer Characteristics Transconductance
STMicroelectronics
Original
any circuit using irf830 SMPS using IRF830 irf830 mosfet switching driver irf830 V435 schematics power supply with irf830 P011C

IRF830

Abstract: reliability irf830 FlthCS RthJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient MAX TYP MAX IRF830-3 1.67 , Junction' to-Case Vs. Pulse Duration For IRF830-3 V so . S O U R C E -T O -O R A IN V O L T A G E (V O L , IRF830/831/832/833 FEATURES · · · · · · · Lower Rqs (ON) Improved inductive ruggedness Fast , Improved high temperature reliability N-CHANNEL POWER MOSFETS TO-220 - i , IRF830/831/832/833 PRODUCT SUMMARY Part Number IRF830 IRF831 IRF832 IRF833 Vds 500V 450V 500V 450V RoS
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OCR Scan
reliability irf830

IRF830

Abstract: IRF830N IRF830 ® N - CHANNEL 500V - 1.35 - 4.5A - TO-220 PowerMESHTM MOSFET TYPE V DSS s s s s s R DS(on) ID 500 V IRF830 < 1.5 4.5 A TYPICAL RDS(on) = 1.35 , Datasheet August 1998 1/8 IRF830 THERMAL DATA R thj-case Rthj-amb R thc-sink Tl o , Min. Min. A Typ. 2.5 Max. Unit S 610 120 10 pF pF pF IRF830 , ns 3.3 µC 15 A Thermal Impedance let o bs O 3/8 IRF830 Output
STMicroelectronics
Original
IRF830N TIRF830 stmicroelectronics datecode

IRF830

Abstract: IRF831 IRF830/FI IRF831/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS R DS( on) ID IRF830 IRF830FI TYPE 500 V 500 V < 1.5 < 1.5 4.5 A 3A IRF831 IRF831FI 450 V 450 , o C (·) Pulse width limited by safe operating area May 1993 1/10 IRF830/FI - IRF831 , Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VG S = 0 for IRF830/830FI for , . 2.7 3.4 600 100 40 Max. Unit S 800 130 55 pF pF pF IRF830/FI - IRF831/FI
STMicroelectronics
Original
IRF830/FI ISOWATT220 830FI 831FI P011G

irp833

Abstract: JRF830 File Number 1582 Power MOS Field-Effect Transistors -Standard Power MOSFETs IRF830, IRF831 ,   Majority carrier device go-; TERMINAL DIAGRAM The IRF830, IRF831, IRF832 and IRF833 are n-channel , « JEDEC TO-220AB Absolute Maximum Ratings Parameter IRF830 JRF831 JBF83; IRF833 Unit» Vqs Drain â , . (1.6mm) from ease for 10s) °c 3-199 Standard Power MOSFETs -â'"â â'"- IRF830, IRF831, IRF832 , . Units 4 Test Conditions BVDSS Drain - Source Breakdown Voltage IRF830 IRF832 500 - - V VQS = OV
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OCR Scan
RF832 irp833 JRF830 3203 MOSFET F832 IAF830 92CS-3S52

4N50

Abstract: IRF830 IRF430-433/IRF830-833 MTM/MTP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V/500 V Power And Discrete , â¡â¡STIEG ñ IRF430-433/IRF830-833 t-39-11 Electrical Characteristics (Tc = 25°C unless otherwise noted , VDSS, Vqs = 0 V, Tc= 125°C Igss Gate-Body Leakage Current IRF430-433 IRF830-833 nA Vqs = ±20 V , . 2-134 fairchild semiconductor an DEISM^^M pog?^ i IRF430-433/IRF830-833 MTM/MTP4N45/4N50 t , 2-135 i fairchild semiconductor - â'" â'" ^|34bciti74 0de7c154 IRF430-433/IRF830-833 MTM/MTP4N45/4N50
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OCR Scan
IRF430 IRF431 IRF432 IRF433 MTM4N45 MTM4N50 4N50 irf4321 IRF 5054 MTP4N45 MTP4N50 IRF430-433/IRF830-833

IRF830

Abstract: IRF830 ® N - CHANNEL 500V - 1.35â"¦ - 4.5A - TO-220 PowerMESHâ"¢ MOSFET TYPE V DSS s R DS(on) ID 500 V IRF830 < 1.5 â"¦ 4.5 A TYPICAL RDS(on) = 1.35 â"¦ EXTREMELY , Datecode Being Z or K Identifies Silicon Characterized in this Datasheet August 1998 1/8 IRF830 , pF IRF830 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test , limited by safe operating area Safe Operating Area Thermal Impedance 3/8 IRF830 Output
STMicroelectronics
Original
Abstract: IRF830, IRF831, IRF832, IRF833 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power , BRAND IRF830 TO -220AB IRF830 IRF831 TO -220AB IRF831 IRF832 TO -220AB IRF832 , Number 1582.2 IRF830, IRF831, IRF832, IRF833 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF830 IRF831 IRF832 IRF833 UNITS Drain to Source Voltage (Note 1 , AX UNITS IRF830, IRF832 500 . . V IRF831, IRF833 450 - - V 2.0 -
OCR Scan

IRF833

Abstract: IRF832 -39- IRF830, IRF831, IRF832, IRF833 Power MOS Field-Effect Transistors File Number 1582 N-Channel , â  High input impedance â  Majority carrier device The IRF830, IRF831, IRF832 and IRF833 are , -220AB Absolute Maximum Ratings Perameter IRF830 1RF831 IRF832 IRF833 Units Vq , G _E .SO_LI^D ^STATE Ql D[f| 3fl75Dfll QDlfl3flD 1 |~>" T-39-11 _ oianalrd Power MOSFETs IRF830 , ) On-State Orain Currant © IRF830 IRF831 4.6 - - A V0S > 'Dlonl " ROSIonl max.' VGS " ,ov IRF832 IRF833
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OCR Scan
w sa 45a diode 30010 T-39- TQ-220AB

irf830

Abstract: IRF830 Data Sheet July 1999 File Number 1582.3 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET , Components to PC Boards" Ordering Information PART NUMBER IRF830 PACKAGE TO-220AB BRAND IRF830 Symbol , -220AB SOURCE DRAIN GATE DRAIN (FLANGE) ©2001 Fairchild Semiconductor Corporation IRF830 Rev. A IRF830 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF830 500 500 4.5 3.0 18 ±20 75 , Fairchild Semiconductor Corporation IRF830 Rev. A IRF830 Source to Drain Diode Specifications
Fairchild Semiconductor
Original

power supply IRF830 APPLICATION

Abstract: any circuit using irf830 IRF830 Data Sheet January 2002 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This , integrated circuits. Formerly developmental type TA17415. Ordering Information PART NUMBER IRF830 , to PC Boards" Symbol D BRAND IRF830 G NOTE: When ordering, include the entire part number , Semiconductor Corporation IRF830 Rev. B IRF830 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF830 500 500 4.5 3.0 18 ±20 75 0.6 300 -55 to 150 UNITS V V A A A V W W/oC
Fairchild Semiconductor
Original
334 mosfet 7A, 100v fast recovery diode n-Channel mosfet 400v power supply IRF830 APPLICATION 12v

any circuit using irf830

Abstract: SMPS using IRF830 IRF830 ® N - CHANNEL 500V - 1.35 - 4.5A - TO-220 PowerMESHTM MOSFET TYPE V DSS s s s s s R DS(on) ID 500 V IRF830 < 1.5 4.5 A TYPICAL RDS(on) = 1.35 , Datasheet August 1998 1/8 IRF830 THERMAL DATA R thj-case Rthj-amb R thc-sink Tl o , GS = 0 Min. Typ. 2.5 Max. Unit S 610 120 10 pF pF pF IRF830 ELECTRICAL , operating area Safe Operating Area Thermal Impedance 3/8 IRF830 Output Characteristics
STMicroelectronics
Original

fet irf830

Abstract: MTM4N45 IRF830 Power Field Effect Transistor N­Channel Enhancement Mode Silicon Gate TMOS This TMOS , Device IRF830 Package Shipping TO­220AB 50 Units/Rail See the MTM4N45 Data Sheet for a , 1 Publication Order Number: IRF830/D IRF830 ELECTRICAL CHARACTERISTICS (TC = 25°C unless , (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. http://onsemi.com 2 IRF830 PACKAGE , 1.39 5.97 6.47 0.00 1.27 1.15 ­­­ ­­­ 2.04 IRF830 E­FET is a trademark of Semiconductor
ON Semiconductor
Original
fet irf830 IRF830/D

1rf830

Abstract: LG diode 831 Source Current (Body Diode) Pulse Source Current (3) (Body Diode) IRF830.831 IHF832.833 IRF830.831 IRF832.833 IRF830.831 IRF832.833 ALL - -4.5 -4 -18 -16 -1.6 -1.5 - A A A A V V ns _ * d io d e i s c , Breakdown Voltage IRF830 IRF832 IRF831 IRF633 ALL ALL ALL ALL S O O 450 2.0 * . - V V Vq s -OV , On-State Resistance (5) On-State Drain Current (2) lD(on) IRF830 IRF831 IRF832 IRF833 IRF830 IRFB31
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OCR Scan
IRFS30 IRFS32 1rf830 LG diode 831 1RF830 IRF631

irf4321

Abstract: 4N50 Company IRF430-433/IRF830-833 MTM/MTP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V/500 V T , * ' FAIRCHILD semiconductor A4 DET| 34^74 â¡â¡STIEG ñ IRF430-433/IRF830-833 T-39-11 Electrical , IRF430-433 IRF830-833 nA Vqs = ±20 V, VDS = 0 V ±100 ±500 On Characteristics VGS , on LEM TR-58 test equipment. 2-134 fairchild semiconductor an DEISM^^M pog?^ i IRF430-433/IRF830-833 , source voltage- n 2-135 i FAIRCHILD SEMICONDUCTOR - â'" â'" ^|34bCIti74 0DE7c154 IRF430-433/IRF830-833
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OCR Scan
irf4304 DIODE 433 134-174 IRF430/432 IRF830/832 MTM/MTP4N50 IRF431/433 IRF831/833 MTM/MTP4N45

IRF830

Abstract: IRF 450 MOSFET DATA IRF830-833 ELECTRICAL CHARACTERISTICS (Tc = 25*0 unless otherw ise noted} Characteristic , MOTOROLA TECHNICAL DATA SEMICONDUCTOR IRF830 IRF831 IRF832 IRF833 TMOS POWER FETs 4 and 4.5 , g ssf Symbol M in M ax Unit V(BR)DSS IRF831, IRF833 IRF830, IRF832 dss - - 0.2 1 , Threshold Voltage iv d s VGS(th) r DS lonl IRF830, IRF831 IRF832, IRF833 'D(on) IRF830, IRF831 IRF832, IRF833 9FS IRF830, IRF831 IRF832, IRF833 2 4 Vdc Ohm = v g s - id = 0 2 5 m A > 10 Vdc- !0 =
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OCR Scan
IRF 450 MOSFET TRANSISTOR mosfet IRF830 transistor irf830

IRf 334

Abstract: IRF 830 TRANSISTOR SGS-THOMSON ü L K g iroe raO Ê i IRF 830/FI-831/FI IRF 832/FI-833/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF830 IRF830FI IRF831 IRF831FI IRF832 IRF832FI IRF833 IRF833FI VD , pA VGS = 0 for IRF830/832/830FI/832FI for IRF831/833/831FI/833FI VDS= Max Rating VDS= Max Rating x , /¿A V GS = 1 0 V 2 4.5 4.0 4 V A A *D (on) x R DS(on) max for IRF830/831/830FI/831FI , IRF830/831/830FI/831FI for IRF832/833/832FÌ/833FI 1.5 2.0 Q U DYNAMIC 9 fs * * Forward
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OCR Scan
IRf 334 IRF 830 TRANSISTOR irf 830 Fi 830 application note using irf 830 831 transistor LTAGE-450 832FI 833FI ISOWATT22Q

LG diode 831

Abstract: 831 transistor S C S -T H O M S O N ^ J 7 T M IIIC T » » IRF 830/FI-831/FI IRF 832/FI-833/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF830 IRF830FI IRF831 IRF831FI IRF832 IRF832FI , leakage current (VDS = 0) lD= 250 ¡iA VGS= 0 for IRF830/832/830FI/832FI for IRF831 /833/831FI/833FI VDS , current Id - 2 5 0 fiA 2 4 V A A Vos > Id (on) x ^DS(on) max V GS = 10 V for IRF830 , resistance VGS= 10 V lD = 2 .5 A for IRF830/831/830FI/831 FI for IRF832/833/832FI/833FI 1.5 2.0 fi
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OCR Scan
irf 831 transistor 831 T0-220 ISOWATT22

1rf830

Abstract: VN64GA IRF830 500 2.0 4.0 75 VN5002D 500 2.0 4.0 75 IRF832 500 3.0 2.5 40 1RF820 500 4.0 2.0 40 IRF822 , 1.4 20 VN2406D Siliconix 1-29 IRF430 - IRF431 - IRF432 - IRF433 IRF830 â  IRF831 â  IRF832 â , BVdss Drain-Source Breakdown IRF430, 2 IRF830, 2 500 V Vos = 0. ID = 250fiA IRF431, 3 IRF831, 3 450 , VDS, VGS = 0, Tc= 125"C 'D(on) On-State Drain Current IRF430, 1 IRF830, 1 4.5 A VDS = 25V, VGS = 10V (Note 1) IRF431, 3 IRF831, 3 4.0 Static Drain-Source On-State rDS(on) Resistance IRF430, 1 IRF830
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OCR Scan
IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN64GA 2N6658 IRF120 IRF122 IRF132
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