76TD8 EIA-481 EIA-541 - Datasheet Archive

IRF7380QPbF l l l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface

PD - 96132A IRF7380QPbF l l l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free VDSS RDS(on) max 73m:@VGS = 10V 80V 1 8 G1 7 D1 S2 3 6 D2 4 5 D2 S1 Description Specifically designed for Automotive applications. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. 2.2A D1 2 ID G2 SO-8 Top View Absolute Maximum Ratings Parameter Max. Units 80 V VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ± 20 3.6 2.9 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation 2.0 W Linear Derating Factor 0.02 W/°C 2.3 -55 to + 150 V/ns °C ID @ TA = 25°C ID @ TA = 100°C h c e dv/dt TJ Peak Diode Recovery dv/dt Operating Junction and TSTG A 29 Storage Temperature Range Thermal Resistance Typ. Max. Units RJL Junction-to-Drain Lead Parameter 42 °C/W RJA Junction-to-Ambient (PCB Mount) * 50 Notes through are on page 8 www.irf.com 1 07/23/08 IRF7380QPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 80 V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.09 V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 2.2A f RDS(on) Static Drain-to-Source On-Resistance 61 73 VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current 20 µA VDS = 80V, VGS = 0V 250 IGSS Gate-to-Source Forward Leakage 200 nA VGS = 20V Gate-to-Source Reverse Leakage -200 VDS = 64V, VGS = 0V, TJ = 125°C VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units S Conditions gfs Qg Forward Transconductance 4.3 VDS = 25V, ID = 2.2A Total Gate Charge 15 23 Qgs Gate-to-Source Charge 2.9 Qgd Gate-to-Drain ("Miller") Charge 4.5 VGS = 10V td(on) Turn-On Delay Time 9.0 VDD = 40V tr Rise Time 10 td(off) Turn-Off Delay Time 41 tf Fall Time 17 VGS = 10V Ciss Input Capacitance 660 VGS = 0V Coss Output Capacitance 110 Crss Reverse Transfer Capacitance 15 Coss Output Capacitance 710 VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance 72 VGS = 0V, VDS = 64V, = 1.0MHz Coss eff. Effective Output Capacitance 140 VGS = 0V, VDS = 0V to 64V ID = 2.2A nC VDS = 40V f ID = 2.2A ns RG = 24 f VDS = 25V pF = 1.0MHz g Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current Ã Typ. Max. Units 75 mJ dh 2.2 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current 3.6 A MOSFET symbol ISM (Body Diode) Pulsed Source Current 29 A showing the integral reverse VSD (Body Diode) Diode Forward Voltage 1.3 V p-n junction diode. TJ = 25°C, IS = 2.2A, VGS = 0V trr Reverse Recovery Time 50 ns Qrr Reverse Recovery Charge 110 nC ton Forward Turn-On Time 2 Ãh D G S f TJ = 25°C, IF = 2.2A, VDD = 40V di/dt = 100A/µs f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF7380QPbF 100 100 10 BOTTOM 1 3.7V 0.1 0.01 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V 10 BOTTOM 3.7V 1 20µs PULSE WIDTH Tj = 150°C 20µs PULSE WIDTH Tj = 25°C 0.1 0.001 0.1 1 10 100 0.1 1000 1 Fig 1. Typical Output Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) 2.5 10 T J = 150°C T J = 25°C VDS = 15V 20µs PULSE WIDTH 0 3.0 4.0 5.0 6.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 1000 Fig 2. Typical Output Characteristics 100 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current () VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V 7.0 I D = 3.6A 2.0 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7380QPbF 100000 VGS , Gate-to-Source Voltage (V) 10000 C, Capacitance(pF) 12 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C SHORTED gs ds Crss = C gd Coss = Cds + Cgd 1000 Ciss C oss 100 Crss 10 ID= 2.1A VDS= 16V 8 6 4 2 1 0 1 10 100 0 2 VDS, Drain-to-Source Voltage (V) 6 8 10 12 14 16 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 ID, Drain-to-Source Current (A) 100 ISD, Reverse Drain Current (A) 4 Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 T J= 25 ° C TJ = 150 ° C 1 V GS = 0 V 0.1 0.0 0.5 1.0 1.5 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS= 64V VDS= 40V 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100µsec 1 1msec Tc = 25°C Tj = 150°C Single Pulse 0.1 2.0 1 10msec 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7380QPbF 4.0 RD VDS VGS ID , Drain Current (A) 3.0 D.U.T. RG + -V DD 10V 2.0 Pulse Width 1 µs Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 125 150 TA , Ambient Temperature (°C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJA ) 100 D = 0.50 0.20 10 Thermal Response 0.10 0.05 P DM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.1 0.00001 0.0001 0.001 0.01 0.1 t1/ t 2 J = P DM x Z thJA 1 +T A 10 100 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 RDS(on) , Drain-to -Source On Resistance (m ) IRF7380QPbF RDS (on) , Drain-to-Source On Resistance (m) 95 90 85 80 VGS = 10V 75 70 65 60 55 50 0 5 10 15 20 25 30 800 700 600 500 400 300 ID = 3.6A 200 100 0 3.0 ID , Drain Current (A) 5.0 7.0 9.0 11.0 13.0 15.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2µF QGS .3µF D.U.T. + V - DS QGD 200 VG EAS, Single Pulse Avalanche Energy (mJ) 50K 12V VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V I AS tp DRIVER + V - DD 0.01 Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 A TOP 160 BOTTOM ID 1.0A 1.8A 2.2A 120 80 40 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7380QPbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) 9 9DH 7 $ 6 ' & % $ ! % " # C !$Ãb dÃ @ 6 6 i p 9 @ r r C F G 6 %Y r r 'YÃi !$Ãb dÃ 6 DI8C@T HDI H6Y $"! %'' # (' " ! &$ (' '( (%' #(& $&# $ÃÃ76TD8 76TD8 !$ÃÃ76TD8 76TD8 !!'# !## ( (% % $ Ã Ã' HDGGDH@U@ST HDI H6Y "$ &$ !$ "" $ ( !$ #' $ "' # !&ÃÃ76TD8 76TD8 %"$ÃÃ76TD8 76TD8 $' %! !$ $ # !& Ã Ã' FÃÃ#$ 8 Ãb#dÃ 6 'YÃp 'YÃG & 8 6 7 IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H (# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃPAÃG@69ÃAPSÃTPG9@SDIBÃUP ÃÃÃÃÃ6ÃTV7TUS6U@ APPUQSDIU 'YÃ&!Ãb!'d %#%Ãb!$$d "YÃ !&Ãb$d 'YÃ &'Ãb&d SO-8 Part Marking Information @Y6HQG@)ÃUCDTÃDTÃ6IÃDSA& ÃHPTA@U DIU@SI6UDPI6G S@8UDAD@S GPBP ; ) 96U@Ã8P9@Ã`XX QÃ2Ã9DTBI6U@TÃG@69ÃÃAS@@ QSP9V8UÃPQUDPI6G `Ã2ÃG6TUÃ9DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ GPUÃ8P9@ Q6SUÃIVH7@S Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRF7380QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 EIA-481 & EIA-541 EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 EIA-481 & EIA-541 EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 31mH RG = 25, IAS = 2.2A. Pulse width 400µs; duty cycle 2%. When mounted on 1 inch square copper board. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ISD 2.2A, di/dt 220A/µs, VDD V(BR)DSS,TJ 150°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2008 8 www.irf.com