NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| IRF6609 | International Rectifier | SMD, HEXFET Power Amp., 20V 150A 89W, MOS-FET N-Channel enhanced |
10 pages, |
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| IRF6609 | International Rectifier | A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in ; A IRF6609 with Standard Tape and Reel Quantity of 4800 |
11 pages, |
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| IRF6609 | International Rectifier | Power MOSFET |
10 pages, |
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| IRF6609TR1 | International Rectifier | 20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
10 pages, |
Original | |
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| IRF6609TR1 | International Rectifier | A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in ; Similar to IRF6609 shipped in tape and reel 1000 pieces |
11 pages, |
Original | |
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| IRF6609TR1PBF | International Rectifier |
10 pages, |
Original | |
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| IRF6609TR1PBF | International Rectifier | A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in ; Similar to IRF6609 qualified for use with lead free soldering shipped in tape and reel 1000 pieces |
11 pages, |
Original | |
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| IRF6609TRPBF | International Rectifier |
10 pages, |
Original | |
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| IRF6609TRPBF | International Rectifier | A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in ; Similar to IRF6609 qualified for use with lead free solder shipped in tape and reel 4800 pieces |
11 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: PD - 95822 IRF6609 HEXFETо Power MOSFET VDSS Low Conduction Losses l Low Switching , (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6609 combines the , The IRF6609 balances both low resistance and low charge along with ultra low package inductance to , The IRF6609 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 ... | Original |
10 pages, |
IRF6618TR1 IRF6618 IRF6609 IRF6609 abstract |
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| Abstract: PD - 95822A IRF6609 HEXFETо Power MOSFET VDSS RDS(on) max Qg 20V Low , Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6609 , resistance by 80%. The IRF6609 balances both low resistance and low charge along with ultra low package , higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck , The IRF6609 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET ... | Original |
10 pages, |
IRF6618TR1 IRF6618 IRF6609 datasheet abstract |
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| Abstract: (ordered as IRF6609). For 1000 parts on 7" reel, order IRF6609TR1 NOTE: CONTROLLING DIMENSIONS IN MM , PD - 95822B 95822B IRF6609 HEXFETо Power MOSFET VDSS RDS(on) max Qg 20V Low , Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6609 , resistance by 80%. The IRF6609 balances both low resistance and low charge along with ultra low package , higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck ... | Original |
10 pages, |
IRF6609 95822B IRF6609 abstract |
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| Abstract: (ordered as IRF6609). For 1000 parts on 7" reel, order IRF6609TR1 NOTE: CONTROLLING DIMENSIONS IN MM , PD - 95822B 95822B IRF6609 HEXFETо Power MOSFET VDSS RDS(on) max Qg 20V Low , Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6609 , resistance by 80%. The IRF6609 balances both low resistance and low charge along with ultra low package , higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck ... | Original |
11 pages, |
IRF6609 IRF6609 abstract |
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| Abstract: 20V N-channel mosfets ( IRF6609 DirectFETs as OR-FETs) connected in parallel. Its basic circuit is , IRF6609 Low-Rds-on (2mOhm) DirectFET (OR-FETs) Highside implementation (positive rail) of OR-ing function , output rail connector (Con1) of the power converter. This is necessary to drive the gates of 4 IRF6609 , : DIRECTFET IRF6609 1 2 3 4 680 LED1 Date: SW1 2 Z1 1 Size C1 22uF/16V 3 , ) : DIRECTFET IRF6609 3R3 R4 3R3 R3 3R3 R2 SW2 R9 470 +12Vaux SW1 R7 470 ... | Original |
12 pages, |
IRF6609 IRAC5001-HS100 IR5001 300w power amplifier circuit diagram 1kw mosfet ORing fet 12v 100a IRAC5001-HS100A IRAC5001-HS100A abstract |
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| Abstract: N-MOSFET 2 Vishay Q3 IRF6609 N-MOSFET 1 Vishay D1 SL22-E3/2C SL22-E3/2C 1 Vishay ... | Original |
8 pages, |
100nF 10 50V X7R 0603 470nF 0603 50V GRM319R71H474KA01B IRF6609 IRF6633 LM27 LM2743 lp2937 GRM319R71H104KA01 AN1640 470nF 25V X7R mbrs0520 100nF X7R VISHAY LM2743-19A LM2743-19A LM2743-19A abstract |
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| Abstract: Semiconductor Q2, Q3 IRF6633 IRF6633 IRF6722 IRF6722 Internation Rectifier Q5 IRF6609 IRF6609 ... | Original |
18 pages, |
SER2010-202 GRM21BR71H105KA12L C3216X7R1H105K C1608C0G1H180J C1608C0G1H101J 1812m RL3264SW4 LM10520 LM10520 abstract |
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| Abstract: Q1-2 IRF6633 IRF6633 N-MOSFET Q3 IRF6609 N-MOSFET D1 SL22-E3/2C SL22-E3/2C Schottky Diode D2 ... | Original |
8 pages, |
1641 CRCW060310R0 IRF6609 IRF6633 LM2747 lp293 sanyo capacitor 6SVPC220M mbrs0520 GRM319R71H104KA01 sl22-E3/2C lp2937 LM2747-19A LM2747-19A abstract |
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| Abstract: Q1-2 IRF6633 IRF6633 N-MOSFET Q3 IRF6609 N-MOSFET D1 SL22-E3/2C SL22-E3/2C Schottky Diode D2 ... | Original |
8 pages, |
LM2745 IRF6633 IRF6609 lp2937 LM2745-19A LM2745-19A abstract |
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| Abstract: L1 SER2010-202ML SER2010-202ML Inductor Q1-2 IRF6633 IRF6633 N-MOSFET Q3 IRF6609 N-MOSFET D1 ... | Original |
8 pages, |
LM2743 IRF6633 IRF6609 lp2937 capacitor 3.3nf 16v 10 0603 x7r vishay LM2743-19A LM2743-19A abstract |
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| .SUBCKT irf6609 1 2 3 * SPICE3 MODEL WITH THERMAL RC NETWORK * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved CJO=0 * RS=0 BV=infinite IBV=1mA .MODEL MD3 D IS=1e-10 N=0.4 .ENDS irf6609 *SPICE 4-Layer Thermal Model Subcircuit .SUBCKT irf6609t 4 0 R_RTHERM1 4 3 0.6784485 C_CTHERM1 4 0 0 11.19309 .ENDS irf6609t www.datasheetarchive.com/files/spicemodels/misc/spice/irf6609.spi |
Spice Models | 20/08/2004 | 1.93 Kb | SPI | irf6609.spi |
| template irf6609 d g s # Saber Model with Thermal RC Network #* # Model Generated by MODPEX * #Copyright(c) Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE * # Contains Proprietary Information * # Which is The Property of * # SYMMETRY OR ITS LICENSORS * #Commercial Use or Resale Restricted * # by Symmetry License Agreement this part of the library template irf6609t tj tc { rtherm.r1 tj n3 = 0.6784485 ctherm.c1 www.datasheetarchive.com/files/international-rectifier/simulation-models/irf6609.sin |
International Rectifier | 20/08/2004 | 2.21 Kb | SIN | irf6609.sin |
| Toshiba Part | Industry Part | Manufacturer | Description | Category |
| TPCA8011-H Buy | IRF6609TR1 Buy | International Rectifier | Power MOSFET (Nch single VDSS 30V) - SOP Advance - | Transistors |
| Part | Similar Part | Notes |