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IRF630STRLPBF Vishay Siliconix Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMD-220, 3 PIN visit Digikey Buy
IRF630SPBF Vishay Siliconix Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMD-220, 3 PIN visit Digikey Buy
IRF630STRRPBF Vishay Siliconix Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMD-220, 3 PIN visit Digikey Buy

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Part : IRF630SPBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : 750 Best Price : €0.6369 Price Each : €1.3619
Part : IRF630SPBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : IRF630STRLPBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : IRF630STRLPBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : €0.4729 Price Each : €0.9619
Part : IRF630STRRPBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : IRF630STRRPBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : €0.4729 Price Each : €0.9619
Part : IRF630SPBF Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : - Best Price : $0.76 Price Each : $1.00
Part : IRF630STRLPBF Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : - Best Price : $0.8550 Price Each : $0.8550
Part : IRF630STRLPBF Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : - Best Price : $0.95 Price Each : $1.19
Part : IRF630S Supplier : International Rectifier Manufacturer : Bristol Electronics Stock : 1,150 Best Price : - Price Each : -
Part : IRF630SPBF Supplier : Vishay Siliconix Manufacturer : Bristol Electronics Stock : 27 Best Price : $1.2188 Price Each : $1.8750
Part : IRF630ST4 Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 136 Best Price : - Price Each : -
Part : IRF630SPBF Supplier : Vishay Siliconix Manufacturer : ComSIT Stock : 250 Best Price : - Price Each : -
Part : IRF630S Supplier : - Manufacturer : Chip One Exchange Stock : 106 Best Price : - Price Each : -
Part : IRF630SPBF Supplier : Vishay Intertechnology Manufacturer : Chip1Stop Stock : 1,129 Best Price : $1.38 Price Each : $1.38
Part : IRF630SPBF Supplier : Vishay Intertechnology Manufacturer : Chip1Stop Stock : 477 Best Price : $1.5791 Price Each : $1.5791
Part : IRF630STRLPBF Supplier : Vishay Intertechnology Manufacturer : Chip1Stop Stock : 343 Best Price : $1.2208 Price Each : $1.2208
Part : IRF630STRLPBF Supplier : Vishay Intertechnology Manufacturer : Chip1Stop Stock : 800 Best Price : $0.6770 Price Each : $0.6770
Part : IRF630S Supplier : International Rectifier Manufacturer : New Advantage Stock : 3 Best Price : - Price Each : -
Shipping cost not included. Currency conversions are estimated. 

IRF630S Datasheet

Part Manufacturer Description PDF Type
IRF630S Philips Semiconductors N-Channel TrenchMOS Transistor Original
IRF630S STMicroelectronics N-Channel 200V - 0.35 ? -9A-D 2 PAK MESH OVERLAY MOSFET Original
IRF630S Toshiba Power MOSFETs Cross Reference Guide Original
IRF630S Transys Electronics Power MOSFET Original
IRF630S Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A D2PAK Original
IRF630S International Rectifier HEXFET Power MOSFET Scan
IRF630S N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF630SPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A D2PAK Original
IRF630SPBF International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Scan
IRF630ST4 STMicroelectronics N-CHANNEL 200V - 0.35 ? - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET Original
IRF630ST4 STMicroelectronics TRANS MOSFET N-CH 200V 9A 3D2PAK T/R Original
IRF630STRL Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A D2PAK Original
IRF630STRL International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Scan
IRF630STRL N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF630STRLPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A D2PAK Original
IRF630STRR Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A D2PAK Original
IRF630STRR International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Scan
IRF630STRR N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF630STRRPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A D2PAK Original

IRF630S

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ORDERING INFORMATION Package Lead (Pb)-free SMD-220 IRF630SPbF SiHF630S-E3 IRF630S SiHF630S SMD-220 IRF630STRLPbFa SiHF630STL-E3a IRF630STRLa SiHF630STLa SMD-220 IRF630STRRPbFa SiHF630STR-E3a IRF630STRRa , IRF630S, SiHF630S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , , 16-Jun-08 www.vishay.com 1 IRF630S, SiHF630S Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 , -81276-Rev. A, 16-Jun-08 IRF630S, SiHF630S Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise Vishay Siliconix
Original
HF630S IRF630SP HF630S-E3 IRF630STRLP HF630STL-E3 HF630STL

OA 207 diode

Abstract: AN-994 International gag Rectifier PD-9.901 IRF630S HEXFET® Power MOSFET Surface Mount Available in Tape , #AN-994, 203 IRF630S [K® Electrical Characteristics @ Tj = 25°C (unless otherwise specified) Parameter , 1. Typical Output Characteristics, Tc=25°C IRF630S aT io1 Q. E < O .£ io° (O Q Q 10-«. 10"1 vas , On-Resistance Vs. Temperature 205 IRF630S VGS - OV, f 1MHz ^iss _ '-'gs + Cgd. Cds SHORTED ^rss = cgd Cqsb ~ ^ds , Operating Area 206 I«R IRF630S io tu O. E < c ® O c 'to Q Q \ N s
-
OCR Scan
OA 207 diode Diode smd marking b5 smd marking GX 0-40Q
Abstract: IRF630S N - CHANNEL 200V - 0.35Ã2 - 9A - D2PAK MESH OVERLAYâ"¢ MOSFET TYPE V IR F 630 S , < 9 A , d i/ d t < 3 0 0 A/lis . V d d < V (b r)d s s , T j < T jm a x 1/8 IRF630S THERMAL DATA , Q_ _ _ C iss Coss Param eter IRF630S ELECTRICAL CHARACTERISTICS (continued) SWITCHING , » < \ lO - , Variations GC7749Q 4/8 6 8 V gs(V ) IRF630S Normalized Gate Threshold Voltage vs -
OCR Scan
GC77430 GC2093Q GC7752Q GC77530

irf630

Abstract: irf630 smd transistor IRF630, IRF630S SYMBOL QUICK REFERENCE DATA · 'Trench' technology · Low on-state resistance · , is supplied in the SOT78 (TO220AB) conventional leaded package The IRF630S is supplied in the SOT404 , specification N-channel TrenchMOSTM transistor IRF630, IRF630S AVALANCHE ENERGY LIMITING VALUES , transistor IRF630, IRF630S REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25°C unless , specification N-channel TrenchMOSTM transistor IRF630, IRF630S Normalised Power Derating, PD (%) 10
Philips Semiconductors
Original
irf630 smd transistor transistor IRF630 irf630 philips

SiHF630S-GE3

Abstract: IRF630S MOSFET ORDERING INFORMATION D2PAK (TO-263) SiHF630STRR-GE3a IRF630STRLPbFa IRF630STRRPbFa SiHF630STL-E3a SiHF630STR-E3a IRF630STRLa IRF630STRRa SiHF630S SnPb SiHF630S-GE3 IRF630S , IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , D2PAK (TO-263) IRF630SPbF Package SiHF630STLa SiHF630STRa Note a. See device orientation , IRF630S, SiHF630S Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted
Vishay Siliconix
Original
2002/95/EC HF630STRR-GE3 IRF630STRRP HF630STR-E3 HF630S-GE3 HF630STRL-GE3

sihf630s

Abstract: SMD diode NC ORDERING INFORMATION Package Lead (Pb)-free SMD-220 IRF630SPbF SiHF630S-E3 IRF630S SiHF630S SMD-220 IRF630STRLPbFa SiHF630STL-E3a IRF630STRLa SiHF630STLa SMD-220 IRF630STRRPbFa SiHF630STR-E3a IRF630STRRa , IRF630S, SiHF630S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , , 16-Jun-08 www.vishay.com 1 IRF630S, SiHF630S Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 , -81276-Rev. A, 16-Jun-08 IRF630S, SiHF630S Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise
Vishay Siliconix
Original
SMD diode NC HF630STR

IRF630S

Abstract: IRF630S ® N - CHANNEL 200V - 0.35 - 9A - D2PAK MESH OVERLAYTM MOSFET TYPE V DSS s s s s s s R DS(on) ID 200 V IRF630S < 0.40 9 A TYPICAL RDS(on) = 0.35 , ) ISD 9A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX 1/8 IRF630S THERMAL DATA R thj -case Rthj , pF IRF630S ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Typ. Max. Unit , Operating Area Thermal Impedance 3/8 IRF630S Output Characteristics Transfer Characteristics
STMicroelectronics
Original
P011P6/C
Abstract: -263) Lead (Pb)-free and Halogen-free SiHF630S-GE3 SiHF630STRL-GE3a SiHF630STRR-GE3a IRF630SPbF IRF630STRLPbFa IRF630STRRPbFa SiHF630S-E3 SiHF630STL-E3a SiHF630STR-E3a Lead (Pb)-free Note a , IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S Vishay Siliconix , ?91000 IRF630S, SiHF630S Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Vishay Siliconix
Original
Abstract: (Pb)-free D2PAK (TO-263) SiHF630S-GE3 IRF630SPbF SiHF630S-E3 IRF630S SiHF630S D2PAK (TO-263) SiHF630STRL-GE3a IRF630STRLPbFa SiHF630STL-E3a IRF630STRLa SiHF630STLa D2PAK (TO-263) SiHF630STRR-GE3a IRF630STRRPbFa SiHF630STR-E3a IRF630STRRa SiHF630STRa SnPb Note a. See device orientation. ABSOLUTE MAXIMUM , IRF630S, SiHF630S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , apply Document Number: 91032 S10-2695-Rev. B, 29-Nov-10 www.vishay.com 1 IRF630S, SiHF630S Vishay Vishay Siliconix
Original

IRF630S

Abstract: SiHF630S ORDERING INFORMATION Package SMD-220 IRF630STRRPbFa SiHF630STL-E3a SiHF630STR-E3a IRF630S IRF630STRLa IRF630STRRa SiHF630S SnPb SMD-220 IRF630STRLPbFa SiHF630S-E3 Lead (Pb)-free SMD-220 IRF630SPbF SiHF630STLa SiHF630STRa Note a. See device orientation. ABSOLUTE , IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , www.vishay.com 1 IRF630S, SiHF630S Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise
Vishay Siliconix
Original
smd e3a

smd diode marking 59A

Abstract: AN-994 and soldering techniques refer to application note #AN-994. 203 IRF630S_Hg Electrical , International S Rectifier PD-9.901 IRF630S HEXFET® Power MOSFET â'¢ Surface Mount â , =25°C IRF630S £ < ® O c 2 Q Q 10° 111 8° 6 s R , . Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 205 IRF630S j0° 101 , Tc, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature IRF630S - Vdd Fig
-
OCR Scan
smd diode marking 59A IRG5 OA 207 B diode SMD resistors 59a X_S marking
Abstract: to application note #AN-994. 62 °C/W â  IRF630S_ 4A5S452 0014723 STT â  INR , 4055432 0014722 bb3 â  INR International iâ'R Rectifier PD-9.901 IRF630S INTERNATIONAL , ) 204 â  4ÃSS4S2 GÃ147S4 43b â  INR INTERNATIONAL RECTIFIER bSE D IRF630S lD , . Temperature â  IRF630S MflSS4S2 ÃD147S5 375 â  INR INTERNATIONAL RECTIFIER bSE I. > I«R , . Drain-to-Source Voltage 206 â I 4ÃSS45E ü0147Sb Ea^ â  INR IO R INTERNATIONAL RECTIFIER IRF630S -
OCR Scan
0147S
Abstract: (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF630S-GE3 IRF630SPbF SiHF630S-E3 D2PAK (TO-263) SiHF630STRL-GE3a IRF630STRLPbFa SiHF630STL-E3a D2PAK (TO-263) SiHF630STRR-GE3a IRF630STRRPbFa SiHF630STR-E3a , IRF630S, SiHF630S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S , THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S Vishay Siliconix
Original
Abstract: -263) Lead (Pb)-free and Halogen-free SiHF630S-GE3 SiHF630STRL-GE3a SiHF630STRR-GE3a IRF630SPbF IRF630STRLPbFa IRF630STRRPbFa SiHF630S-E3 SiHF630STL-E3a SiHF630STR-E3a Lead (Pb)-free Note a , IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S Vishay Siliconix , ?91000 IRF630S, SiHF630S Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Vishay Siliconix
Original
2011/65/EU JS709A

IRF630STRLPBF

Abstract: (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF630S-GE3 IRF630SPbF SiHF630S-E3 D2PAK (TO-263) SiHF630STRL-GE3a IRF630STRLPbFa SiHF630STL-E3a D2PAK (TO-263) SiHF630STRR-GE3a IRF630STRRPbFa SiHF630STR-E3a , IRF630S, SiHF630S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S , THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S
Vishay Siliconix
Original

TRANSISTOR REPLACEMENT GUIDE

Abstract: SMD-2512 , 50 m, 1% 330 k, 1/4 W 0 , jumper 82 k, 1/4 W Int'l Rectifier IRF630 or IRF630S PN2222/A
Unitrode
Original
UCC3921 SLUS274 TRANSISTOR REPLACEMENT GUIDE SMD-2512 texas instruments transistor manual smd2512 transistor 99127 48VDC POWER SUPPLY SLUU076A UCC3913 UCC3913/ UCC3913/21 SLUU07

IRF630S

Abstract: IRF630S Power MOSFET VDSS = 200V, RDS(on) = 0.40 ohm, ID = 9.0 A D G S N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Leakage Current Gate Charge QGS Gate to Drain Charge QGD Input Capacitance Output Capacitance COSS Transfer Capacitance - - 0.40 - - 43 nC 7.0 nC 23 nC - pF nS 9.0 A 36 A 2.0 V CRSS Turn On Delay Time td(on) Turn Off
Transys Electronics
Original
160VDC 10VDC 25VDC 100VDC 20VDC

90980

Abstract: IRFI540G IRFZ34S IRFZ44S IRFZ48S IRF510S IRF520S IRF530S IRF540S IRF610S IRF620S IRF630S IRF640S IRF614S IRF624S
-
OCR Scan
IRFI540G 90980 SMD BR 42 h6 SMD IRLR014 IRLR024N IRLR110 IRLR120 IRFI740GLC IRFI840GLC

SMD2512

Abstract: TRANSISTOR REPLACEMENT GUIDE , 50 m, 1% 330 k, 1/4 W 0 , jumper 82 k, 1/4 W Int'l Rectifier IRF630 or IRF630S PN2222/A
Texas Instruments
Original
UDG-99127 1N4148 TRANSISTOR C4

2N2222 TRANSISTOR TOSHIBA

Abstract: 99127 Number 1 F/16VDC 1.5nF/16VDC Not Used - Open Circuit Diode MOSFET 1N4148 IRF630 or IRF630S
Unitrode
Original
DN-67 SLUU077 2N2222 TRANSISTOR TOSHIBA 99127 toshiba power supply 2N2222 circuit Bill Andreycak 48VDC 2N2222

DIODE S4-33

Abstract: led soft start circuit 555 timer CTM30497 Q7 IRF630S R24 GATE2 5.6 C18 390 pF 1.0 kV Q6 HUF75333S3S TP24 TP14 Isolated GND C21 1.0 µF C44 , HUF75333S3S I.R. IRF630S Panasonic ERJ­6ENF1691 Panasonic ERJ­6GE0R00 Panasonic ERJ­6GEYJ362 Panasonic ERJ
ON Semiconductor
Original
DIODE S4-33 led soft start circuit 555 timer DIODE S4 52a 555 timer hiccup mode AC OVERload PROTECTION CIRCUIT 555 timer T68-52A CS5106DEMO/D CS5106

fqp60n06

Abstract: SSH6N80 STP24NF10 STP4N20 STP6NS25 STP7NB20 STP7NB20FP IRF620 STP6NB25 IRF630 STP10NB20FP IRF630S , IRF630S IRF630STR IRF640 IRF640FI IRF640L IRF640S IRF644 IRF644S IRF720 IRF7201 IRF720FI
STMicroelectronics
Original
fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L
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