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Part : IRF620 Supplier : International Rectifier Manufacturer : New Advantage Stock : 97 Best Price : - Price Each : -
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IRF622 Datasheet

Part Manufacturer Description PDF Type
IRF622 Fairchild Semiconductor N-Channel Power MOSFETs, 7A, 150-200V Scan
IRF622 FCI POWER MOSFETs Scan
IRF622 Frederick Components Power MOSFET Selection Guide Scan
IRF622 General Electric Power Transistor Data Book 1985 Scan
IRF622 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. Scan
IRF622 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF622 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan
IRF622 Motorola European Master Selection Guide 1986 Scan
IRF622 N/A Shortform Datasheet & Cross References Data Scan
IRF622 N/A Shortform Transistor PDF Datasheet Scan
IRF622 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF622 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
IRF622 N/A Semiconductor Master Cross Reference Guide Scan
IRF622 N/A Semiconductor Master Cross Reference Guide Scan
IRF622 N/A FET Data Book Scan
IRF622 National Semiconductor N-Channel Power MOSFETs Scan
IRF622 Siliconix MOSPOWER Design Data Book 1983 Scan
IRF622 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Scan
IRF622 STMicroelectronics Shortform Data Book 1988 Scan
IRF622 Vishay Siliconix Shortform Siliconix Datasheet Scan
Showing first 20 results.

IRF622

Catalog Datasheet MFG & Type PDF Document Tags

irf620

Abstract: IFR622 h a r r is January 1998 IRF620, IRF621, IRF622, IRF623 4.0A and 5.0A, 150V and 200V, 0.8 and , IRF621 IRF622 IRF623 PACKAGE T 0-2 2 0 A B T 0-2 2 0 A B T 0-2 2 0 A B TO-22QAB BRAND IRF620 IRF621 IRF622 IRF623 NOTE: When ordering, use the entire part number. Packaging JEDEC T 0-220A B SOURCE , Procedures. Copyright © Harris Corporation 1997 , File Number 1577 2 IRF620,1RF621 IRF622, IRF623 , 0.32 85 -55 to 150 300 260 IRF621 150 150 5.0 3.0 20 ±20 40 0.32 85 -55 to 150 300 260 IRF622 200 200
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OCR Scan
IFR622 IRF620 HARRIS TA9600 TB334 RF622 RF623 RF621

IRF620

Abstract: IRF621 Power MOSFETs _ IRF620, IRF621, IRF622, IRF623 File Number 1577 Power MOS Field-Effect , ENHANCEMENT MODE TERMINAL DIAGRAM The IRF620, IRF621, IRF622 and IRF623 are n-channel enhancement-mode , JEDEC TO-220AB Absolute Maximum Ratings Parameter IRF620 IRF621 IRF622 1RF623 Units Vq5 Drain â , Dp37-// _ Standard Power MOSFETs IRF620, IRF621, IRF622, IRF623 Electrical Characteristics @Tc = , '¢ Source Breakdown Voltage IRF620 IRF622 200 - - V VQS â  OV lD = 250/iA IRF621 IRF623 ISO - - V
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OCR Scan
YT37 92CS-395 YT-37-/J

IRP623

Abstract: IRP621 -Standard Power MOSFETs File Number 1577 IRF620, IRF621, IRF622, IRF623 Power MOS , ENHANCEMENT MODE GO- TERMINAL DIAGRAM The IRF620, IRF621, IRF622 and IRF623 are n-channel enhancement-mode , JEDEC TO-22QAB Absolute Maximum Ratings Parameter IRF620 IRF621 IRF622 IRF623 Units Vqs Drain Source , . Standard Power MOSFETs - IRF620, IRF621, IRF622, IRF623 Electrical Characteristics @Tc = 25°C (Unless , Voltage IRF620 IRF622 200 V «GS â  Â°v IRF62Ì IRF623 150 V ld - 250iiA VGS)|h) Gale Threshold
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OCR Scan
IRP623 IRP621 TC 3162 IRF620 application T0-220AB

IRF620

Abstract: IRF620 HARRIS IRF620, IRF621, IRF622, IRF623 S E M I C O N D U C T O R 4.0A and 5.0A, 150V and 200V, 0.8 , NUMBER D PACKAGE BRAND IRF620 TO-220AB IRF620 IRF621 TO-220AB IRF621 IRF622 TO-220AB IRF622 IRF623 TO-220AB IRF623 G S NOTE: When ordering, use the entire , . Copyright © Harris Corporation 1997 5-1 File Number 1577.2 IRF620, IRF621, IRF622, IRF623 , 40 0.32 85 -55 to 150 IRF621 150 150 5.0 3.0 20 ±20 40 0.32 85 -55 to 150 IRF622
Harris Semiconductor
Original
IFR623 IRF623 harris
Abstract: Ros , IRF622 IRF623 B V d ss Drain-Source Breakdown Voltage IRF620 IRF621 150 - - V , IRF621 5 0 - - A IRF622 IRF623 4.0 - - A - 0.4 0.8 n IRF622 , - 4 .0 A Pulse Source Current(Body Diode)(3) IRF620 IRF621 - - 20 A IRF622 -
OCR Scan
GD12174 IRF620/621/622/623

IRF620

Abstract: IRF621 3 ^* 7/ N-channel enhancement mode vertical DMOS FET IRF620 IRF621 IRF622 IRF623 FEATURES · · · , achieve greater stability, reliability and ruggedness. PRODUCT SUMMARY Part No. IRF620 IRF621 IRF622 , IRF620 IRF621 IRF622 IRF623 ABSOLUTE MAXIMUM RATINGS Parameter VDs ·d !dm V qs Pd "n* t 6,b Orain-source , T '3 1 -1 1 IRF622 200 4 16 ±20 40 IRF623 Units 150 4 16 ±20 40 V A A V W °C - 55 to + 1 5 0 , voltage Part No. Min. IRF620 IRF622 IRF621 IRF623 V GS(th) Ig s s ·d s s Max. 4 500 250 1000 Unit V
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OCR Scan

IRF620

Abstract: H E D I MflS54S2 0 0 0 0 4 0 4 ? | IRF620, IRF621, IRF622. IRF623 Devices , im ensions in M illim e ters and (In ches) C-229 5.0A 'V w - T IRF620, IRF621, IRF622 , -39-11 Absolute Maximum Ratings Parameter IRF621 IRF622 IR F623 Units â  200 150 200 150 , '¢ Source Breakdown Voltage Type Min. Typ. M ax. Units IR F620 IRF622 200 - - , . Rating x 0 .8 , V q s = OV, T q = 1 2 5 °C IRF620 IRF621 5 .0 - - IRF622 IRF623 4 .0
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OCR Scan
C-233 T-39-11 C-234

D0217

Abstract: IRFP 620 IRF622 200 V 1.2 n 4 A IRF622FI 200 V 1.2 n 3.5 A IRF623 150 V 1.2 à 4 A IRF623FI 150 V 1.2 à 3.5 A , (on) max ^GS = 10 V for IRF620/621/620FI/621FI for IRF622/623/622FI/623FI 5 4 A A Rds (0nj Static drain-source on resistance VGS=10V lD=2.5A for IRF620/621 /620FI/621 Fl for IRF622/623/622FI/623FI 0.8 1.2 Q , ¿fH starting Tj= 25°G for IRF620/621 /620FI/621 Fl for IRF622/623/622FI/623FI 5 4 A A DYNAMIC 9fs , /621 Fl lSD=5A Vgs= 0 1.8 V for IRF622/623/622FI/623FI lSD = 4 A VGS = 0 1.4 V
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OCR Scan
IRF620FI IRF621FI D0217 IRFP 620 IRF622 application FZJ 111 irf 44 n transistor irf620 620/FI-621/FI 622/FI-623/FI ISOWATT22Q ISOWATT220

IDM-16

Abstract: IRF622 IRF622,623 4 AMPERES 200,150 VOLTS RDS(ON) = 1-2 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device rugged-ness and reliability. This design has been optimized to give superior performance in most , paralleling maximum ratings (Tc = 25° C) (unless otherwise specified) RATING SYMBOL IRF622 IRF623 UNITS , Breakdown Voltage IRF622 (VGS = OV, lD = 250 (JA) IRF623 BVdsS 200 150 â'" â'" Volts Zero Gate Voltage
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OCR Scan
IDM-16 IRF622 ge Ge 2sa

irf621

Abstract: irf620 IRF621 IRF622 IRF623 V ds 200V 150V 200V 150V RoS(on) 0 .8 0 0 o .s o o 1 2n 1.2Í1 Id 5.0A 5.0A 4.0A 4.0A , 150 ) I I ±20 IRF622 I IRF623 150 150 Unit Vdc Vdc Vdc Ade Ade Ade Ade mJ A Watts W , Characteristic Drain-Source Breakdown Voltage IR F620 IRF621 IRF622 IRF623 VGS(th) Ig s s Ig s s N-CHANNEL , On-State Drain-Source Current (2) IRF620 IRF621 IRF622 IRF623 Static Drain-Source On-State Resistance (2) IR F620 IRF621 IRF622 IRF623 - - 4.0 100 -1 0 0 250 1000 V d s = V g s . Id = 250^A V g s
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OCR Scan

IRFP 620

Abstract: SD 621 transistor ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI , > ' d (on) x ^DS(on) max VGS = 1 0 V for IRF620/621/620FI/621FI for IRF622/623/622FI/623FI VGS= 10 V lD= 2.5 A for IRF620/621/620FI/621FI for IRF622/623/622FI/623FI ^DS (on) Static drain-source on , 100 fiH starting T j= 2 5 °G for IRF620/621/620FI/621 FI for IRF622/623/622FI/623FI 5 4 A A , current (pulsed) Forward on voltage for IRF620/621/620FI/621 FI ISd = 5 A VGS = 0 for IRF622/623/622FI
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OCR Scan
SD 621 transistor transistor irf b 620 IRFP 306 irf 620 620FI 623FI 622FI
Abstract: w vys S IRF620, IRF621, IRF622, IRF623 S em icon du cto r y y 4.0A and 5.0A, 150V , TO -220AB IRF620 IRF621 TO -220AB IRF621 IRF622 TO -220AB IRF622 IRF623 TO , a rris C o rp o ra tio n 1 9 9 7 ^ , File Number 1577.2 IRF620, IRF621, IRF622 , IRF622 IRF623 UNITS 200 150 200 150 V â  â  V DGR 200 150 200 150 , ise specified MIN TYP MAX UNITS IRF620, IRF622 200 . . V IRF621, IRF623 -
OCR Scan

IRFP 620

Abstract: transistor 623 MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI V DSS , A V D S > lD (on)x R DS(on)max V G S = 1 0 V for IRF620/621/620FI/621 FI for IRF622/623/622FI , FI for IRF622/623/622FI/623FI 0.8 1.2 n 0 ENERGY TEST *UIS Unclamped inductive switching current (single pulse) VDD= 30 V L = 100 starting T j= 25° G for IRF620/621 /620FI/621 FI for IRF622 , /620FI/621 FI ISd = 5 A V GS = 0 for IRF622/623/622FI/623FI Isd = 4 A V GS = 0 350 lSD = 5 A di/dt = 100
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OCR Scan
transistor 623 ir 623 p bem diode IRF 024 IRFP P CHANNEL T0-220 ISQWATT220

irf 30A

Abstract: irf 80 n 1.2 4.0 40 IRF622 170 6.0 1.4 20 VN1706D 150 0.18 18.0 125 IRF641 150 0.22 16.0 125 IRF643 150 , Siliconix IRF220 â  IRF221 â  IRF222 â  IRF223 IRF620 â  IRF621 â  IRF622 â  IRF623 200V N-Channel , -220AB IRF622 200V 1.2fi 4.0A IRF623 150 V ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted
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OCR Scan
IRF450 IRF840 IRF440 VNP002A IRF820 IRF350 irf 30A irf 80 n 5A 08 IRF 50A mospower TO-202AA VN5001D/IRF830

IRF 100A

Abstract: IRF 50A 5.0 40 IRF620 200 1.2 4.0 40 IRF622 170 6.0 1.4 20 VN1706D 150 0.18 18.0 125 IRF641 150 0.22 , 1.2 6.25 VN35AB 1-10 Siliconix IRF220 â  IRF221 â  IRF222 â  IRF223 IRF620 â  IRF621 â  IRF622 , IRF620 200V 0.8Q 5.OA IRF621 150 V TO-220AB IRF622 200V 1.2fi 4.0A IRF623 150 V ABSOLUTE
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OCR Scan
IRF640 IRF642 IRF632 IRF631 IRF633 IRF 100A ir 222
Abstract: N-Channel Power MOSFETs NATL N-Channel Power MOSFETs (Continued) lD @ Pd V oss Type C ase No. IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 IRF720 IRF721 IRF722 IRF723 MTP3N35 MTP3N40 IRF820 IRF821 IRF622 IRF823 MTP2N45 MTP2N50 Style TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) T0-220 (37) T0-220 (37) T0-220 (37) T0-220 (37) T0-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) TO-220 (37) TO-220 (37) (W ) T c = 25°C 40 40 40 40 75 75 40 40 40 40 75 75 -
OCR Scan
0U371T4

IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE POWER MOSFETs SAMSUNG Direct Replace ment IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF612 IRF613 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642 IRF643 IRF710 IRF711 IRF712 IRF713 IRF720 IRF721 IRF722 IRF723 IRF730 IRF731 IRF732 IRF733 IRF740 IRF741 , IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF612 IRF613 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 , MTP5N35 SAMSUNG Direct Re placement IRF822 IRF623 IRF623 IRF622 IRF620 IRF721 IRF720 SSP4N55 SSP4N60
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OCR Scan
IRF9613 IRFP333 VN0106N5 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF742 IRF743 IRF830 IRF831 IRF832 IRF833

IRF620

Abstract: 7n20 '¢ Low Drive Requirements â'¢ Ease of Paralleling TO-220AB IRF620 IRF621 IRF622 IRF623 MTP7N18 , IRF622 200 V 1.2 fi 4.0 A 2.5 A IRF623 150 V 1.2 Ã2 4.0 A 2.5 A MTP7N18 180 V 0.7 Sì 7.0 A 4.5 A , MTP7N18 Rating IRF222/223 IRF622/623 Unit Voss Drain to Source Voltage1 200 180 150 V Vdgr Drain to Gate
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OCR Scan
IRF620-623 7n20 TI74 TR-58 IRF220-223/IRF620-623 MTP7N18/7N20 0Q57S7S IRF220/222 IRF620/622 IRF622/623

IRF 50A

Abstract: IRF420   IRF223 IRF620 â  IRF621 â  IRF622 â  IRF623 200V N-Channel Enhancement Mode MOSPOWER Siliconix , 1.2Q 4.0A IRF223 150 V IRF620 200V 0.8Q 5.OA IRF621 150 V TO-220AB IRF622 200V 1.2fi 4.0A
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OCR Scan
IRF452 IRF442 VN5001A IRF430 VN5002A IRF432 IRF420 IRF422

IRF 4310

Abstract: ir 4310 . IRF621 IRF621R 150 150 5.0 3.0 20 ±20 40 0.32 20 85 - 5 5 t o + 150 300 IRF622 IRF622R 200 200 4.0 2.5 , IRF622/623, IRF622R/623R Forward Transconductance (Note 2) Input Capacitance Output Capacitance Reverse , DRAIN (FLANGE) o I > SOURCE DRAIN GATE Description The IRF620, IRF621, IRF622, and IRF623 are n-channel enhancement-mode silicon-gate power field-effect transis tors. IRF620R, IRF621R, IRF622R and , 150 300 File Number 1577.1 4-306 ÎR F620, IR F 6 2 1 IRF622, /R F623 , IRF620R
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OCR Scan
IRF 4310 ir 4310 F620R IRF623R T0-220A

IRF 850

Abstract: IRf 92 0151 !) IRF220 â  IRF221 â  IRF222 â  IRF223 IRF620 â  IRF621 â  IRF622 â  IRF623 200V N-Channel , -220AB IRF622 200V 1.2fi 4.0A IRF623 150 V ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted
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OCR Scan
IRF340 IRF 850 IRf 92 0151 623 13a 8Q DIODE VN5001A/IRF430 VN4000D/IRF730 VNM001A VN4000A/IRF330 IRF250

1RF620

Abstract: , IRF621, IRF622, and IRF623 are n-channel enhancement-mode silicon-gate power fleld-effect transis , 1577.1 4305271 â¡â¡54014 055 â  HAS 1RF620, IR F 6 2 1, IRF622, IR F623 IRF620R , MOSFETs â  â I 4302271 0054015 m â  HAS IRF620, IRF621, IRF622, /R F623 IRF620R
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OCR Scan
OR/621R 00S4017 RF620R F623R
Showing first 20 results.