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Part Manufacturer Description Datasheet BUY
LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments Buy
LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments

IRF5305 equivalent

Catalog Datasheet MFG & Type PDF Document Tags

IRF3205 equivalent

Abstract: IRF 9732 up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test Hrs. @ 90°C & Failure Rate Temp , 100 85 IRFZ24N 9733 100 85 IRLZ24N 9733 100 135 IRF5305 9734 100 85 IRFZ44N 9721 100 , : Vs = Vd = 0V; Vg as specified Equivalent Dev. - Failure Rate @ Hrs. @ 90°C & Vg 90°C & Vg = Test , explanation of equivalent device hours for HTRB tests. c. One FIT represents one failure in one billion (1.0E+09) hours. d. EQUIVALENT DEV-HRS for the long term gate stress test are determined by Crook's Model
International Rectifier
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IRF3205 equivalent IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent IRF9630 IRF9510L IRF9520 IRF9510 IRF9Z14 IRF9Z34

5.1 home theatre schematic diagram

Abstract: subwoofer 1000 watts amplifier RN+ 29 R18 R12 Q5 IRF5305 RFBK24.3K 1% PGND C20 4.7uF/25V,TANT 25 L3 , LFAOUT + 1 C9 Q3 FDS4435A 10k + R1 R20 15/1W R14 Q7 IRF5305 RFBK
Microsemi
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5.1 home theatre schematic diagram subwoofer 1000 watts amplifier 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12 volts 50 watt subwoofer circuit diagram 5.1 subwoofer ic type amplifier circuit diagram 400 watt subwoofer circuit diagram ANAN-16 LXE1710

IRF5905

Abstract: MOSFET IRF 9732 equivalent of 4.68 billion device-hours at a junction temperature of 90OC (see sections 4.1.1, 4.1.7, 4.2.1 , stress have accumulated the equivalent of over 50 billion device-hours at a junction temperature of 90OC , IRF4905 IRF4905S IRF510 IRF510S IRF520 IRF520N IRF520NS IRF520S IRF5210 IRF5210S IRF530 IRF5305 IRF5305S , 3.3.5.1 Generation 3, Logic Level # of Total Failures Modes Equivalent lots Qty Device Hours Tj = 90°C; Vg , lots 2 3.3.5.6 # of lots 25 Total Qty 2366 Generation 5, N-Channel, Standard Device # Modes Equivalent
International Rectifier
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IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3205 application irf2807 equivalent HTGB

SSP35n03

Abstract: bc417 1.5KE39CA 1.5KE400A 1.5KE400CA 1.5KE43A 1.5KE43CA Fairchild Closest Equivalent 1.5KE100A , Fairchild Closest Equivalent Industry 1.5KE440A 1.5KE440CA 1.5KE47A 1.5KE47CA 1.5KE51A 1.5KE51CA , 1N126A 2 Fairchild Closest Equivalent Industry 1.5KE82A 1.5KE91A ES1B ES1D SS14 SS16 , 1N190 Fairchild Closest Equivalent 1N3070 1N3070 1N4148 1N4148 1N4148 1N4148 1N4454 1N4148 , 1N301A 1N301B 1N3020B 1N3021B 1N3022B Fairchild Closest Equivalent 1N4148 1N4148 1N4148
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SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A

LTC3300

Abstract: LTspice normalized in-band 1/f noise specification, which is equivalent to a ­134dBc/Hz phase noise level for a , 1/f noise specification, which is equivalent to a ­134dBc/Hz phase noise level for a 100MHz
Linear Technology
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LTC3300 LTspice DIODE ZENER 3.1V 250mW LTC3105 supercapacitor spice thermoelectric generator model reports EN55022 LT1782 LT1970A LT1638 SW-COC-001530

tda8554

Abstract: TDF8554 power amplifier with multiple voltage regulator PMOS IRF5305 Vpulse (1) 3 5 2200 F 7 9
NXP Semiconductors
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tda8554 TDF8554 TDA8554J DBS37P IRF5305 equivalent TDF8554J TDA8589XJ

TDF8555

Abstract: NXP SAF7741 power amplifier with multiple voltage regulator PMOS IRF5305 Vpulse (1) 3 5 2200 F 7 9
NXP Semiconductors
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TDF8555J TDF8555 NXP SAF7741 SAF7741 NXP SAF7730 saf7730 audio TDF8551J

NXP SAF7741

Abstract: SAF7741 power amplifier with multiple voltage regulator PMOS IRF5305 Vpulse (1) 3 5 2200 F 7 9
NXP Semiconductors
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NXP saf7740 0/NXP SAF7730

TDF8544J

Abstract: TDF8544 50 W power amplifier PMOS IRF5305 Vpulse (1) 3 5 2200 F 7 9 VP Cbuffer 116 mF
NXP Semiconductors
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TDF8544 TDF8544J TDF8544TH TDF8544SD

TDF8546J

Abstract: L2VM . Test circuit for loss-of-ground test PMOS IRF5305 Vpulse (1) 3 5 2200 F 7 9 VP
NXP Semiconductors
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TDF8546 TDF8546J L2VM diode ib5 power amplifier NXP tdf8546 tda8546

power amplifier NXP tdf8546

Abstract: TDF8546J . Test circuit for loss-of-ground test PMOS IRF5305 Vpulse (1) 3 5 2200 F 7 9 VP
NXP Semiconductors
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TDF8541

Abstract: TDF8541SD 45 W power amplifier PMOS IRF5305 Vpulse (1) 3 5 2200 F 7 9 VP Cbuffer 116 mF
NXP Semiconductors
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TDF8541 TDF8541SD 12AT90 power booster circuit diagram AN10987 TDF8541JS/N2,512

AN10987

Abstract: 80N03L 45 W power amplifier PMOS IRF5305 Vpulse (1) 3 5 2200 F 7 9 VP Cbuffer 116 mF
NXP Semiconductors
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80N03L TDF8541J TDF8541JS VP217 DBSMS27P

TDF8544

Abstract: 12AT90 NXP Semiconductors TDF8544 I2C-bus controlled 4 50 W power amplifier PMOS IRF5305 Vpulse
NXP Semiconductors
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power amplifier NXP tdf8546

Abstract: TDF8546 . Test circuit for loss-of-ground test PMOS IRF5305 Vpulse (1) 3 5 2200 F 7 9 VP
NXP Semiconductors
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TDF8546TH sot851

sumida 94V-0

Abstract: inverter using irfz44n 91402 IRF5305 91385 IRF4905 91280 IRFR014* 90701 IRFZ14* 90507 IRLZ14* 90556 -55 V 0.110 , highest performance, use low equivalent series resistance (ESR) capacitors. See the Capacitor Selection
Maxim Integrated Products
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sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F