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Part : IRF510SPBF Supplier : Vishay Siliconix Manufacturer : New Advantage Stock : 752 Best Price : $0.4350 Price Each : $0.4706
Part : IRF520NPBF Supplier : Infineon Technologies Manufacturer : New Advantage Stock : 22,050 Best Price : $0.3880 Price Each : $0.4471
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IRF522 Datasheet

Part Manufacturer Description PDF Type
IRF522 Fairchild Semiconductor N-Channel Power MOSFETs, 11 A, 60-100 V Scan
IRF522 FCI POWER MOSFETs Scan
IRF522 Frederick Components Power MOSFET Selection Guide Scan
IRF522 General Electric Power Transistor Data Book 1985 Scan
IRF522 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF522 International Rectifier N-Channel Power MOSFETs Scan
IRF522 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan
IRF522 Motorola European Master Selection Guide 1986 Scan
IRF522 Motorola Switchmode Datasheet Scan
IRF522 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF522 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF522 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
IRF522 N/A Semiconductor Master Cross Reference Guide Scan
IRF522 N/A Semiconductor Master Cross Reference Guide Scan
IRF522 N/A FET Data Book Scan
IRF522 N/A Shortform Transistor PDF Datasheet Scan
IRF522 N/A Shortform Datasheet & Cross References Data Scan
IRF522 National Semiconductor N-Channel Power MOSFETs Scan
IRF522 Siliconix MOSPOWER Design Data Book 1983 Scan
IRF522 STMicroelectronics Shortform Data Book 1988 Scan
Showing first 20 results.

IRF522

Catalog Datasheet MFG & Type PDF Document Tags

1RF520

Abstract: IRFS20 -Standard Power MOSFETs File Number 1574 IRF520, IRF521, IRF522, IRF523 Power MOS , N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM The IRF520, IRF521, IRF522 and IRF523 are n-channel , 92CS-39529 JEDEC TO-220AB Absolute Maximum Ratings Parameter IRF520 IRF521 IRF522 IRF523 Units Vpg Drain , , (1.6mim) from case for 1Qs) °C 3-139 Standard Power MOSFETs IRF520, IRF521, IRF522, IRF523 , Test Conditions bvdss Drain - Source Breakdown Voltage IRF520 IRF522 100 - - V vGs = ov IRF521
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OCR Scan
1RF520 IRFS20 1rf520 transistor RF521 transistor IRF520 IRFS22

irf520

Abstract: IRF521 HARRIS S E M I C O N D U C T O R IRF520, IRF521, IRF522, IRF523 8A and 9.2A, 80V and 100V , IRF520 IRF521 IRF522 IRF523 PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB BRAND IRF520 IRF521 IRF522 IRF523 , . Copyright © Harris Corporation 1997 , File Number 1574.2 IRF520, IRF521, IRF522, IRF523 Absolute , . e a s 36 -55 to 175 300 260 IRF521 80 80 9.2 6.5 37 ±20 60 0.4 36 -55 to 175 300 260 IRF522 100 , UNITS Drain to Source Breakdown Voltage IRF520, IRF522 IR F521, IRF523 Gate to Threshold Voltage Zero
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OCR Scan
TA09594 TB334 RF522 RF523

IRF5201

Abstract: IRF520 IRF520, IRF521, IRF522, IRF523 S E M I C O N D U C T O R 8A and 9.2A, 80V and 100V, 0.27 and , D PACKAGE BRAND IRF520 TO-220AB IRF520 IRF521 TO-220AB IRF521 IRF522 TO-220AB IRF522 IRF523 TO-220AB IRF523 G S NOTE: When ordering, use the entire , . Copyright © Harris Corporation 1997 5-1 File Number 1574.2 IRF520, IRF521, IRF522, IRF523 , Absolute Maximum Ratings IRF521 80 80 9.2 6.5 37 ±20 60 0.4 36 -55 to 175 IRF522 100 100
Harris Semiconductor
Original
IRF5201 IRF5213 IRF-520 irf520 mosfet MOSFET IRF520

IRF522

Abstract: IRF521 SUPERTEX INC "Ãl DE~J Û773STS GOOlSÃH 0 ^ Super tex inc. IRF520 IRF521 IRF522 IRF523 R520 , .3n 8.OA IRF521 R521 100V 0.4ft 7.0A IRF522 â'" 60V 0.4ft 7.0A IRF523 â'" Advanced DMOS Technology , 3.12 8.0A 32.0A IRF522, IRF523 7.0A 32.OA 40W 80 3.12 8.0A 32.OA R520, R521 1 .OA 9.0A 1W 170 125 , IRF520, IRF522, R520 100 V ves = 0, Ip = 250nA Breakdown Voltage IRF521, IRF523, R521 60 v GS(th , = 10V vds > 'diON) x rds(on) Max Ratin9 IRF522, IRF523 7.0 ros(on) Static Draln-to-Source
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OCR Scan
RP523 R520 R521 irf520 power G-D-S TO-92 TO-220 3 lead bend

1RF520

Abstract: irf521 100V 60V 0.30 0.3Q 0.4Q 0.4Q 8.0A 8.0A 7.0A 7.0A IRF520 IRF521 IRF522 IRF523 R520 R521 - , Characteristics Package lD (continuous)* lD (pulsed)* Power Dissipation @T0=25°C IRF520, IRF521 IRF522, IRF523 , Body Leakage IRF520, IRF522, R520 IRF521, IRF523, R521 100 60 2.0 4.0 500 250 1000 HA V V nA , Current Static Draln-to-Source ON-State Resistance ^DS(ON) IRF520, IRF521, R520, R521 IRF522, IRF523 IRF520, IRF521 R520, R521 IRF522, IRF523 8.0 7.0 A 0.3 0.4 a U VGS=10V, lD= 4.0A ^os
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OCR Scan
125-C

IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE POWER MOSFETs SAMSUNG Direct Replace ment IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 , IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF612 IRF613 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 , MOSFETs SAMSUNG Direct Re placement IRF512 IRF613 IRF613 IRF522 IRF522 IRF612 IRF722 IRF710 IRF823 IRF720 , IRF523 IRF523 IRF523 IRF522 IRF522 IRF611 IRF543 IRF543 IRF530 IRF533 IRF533 IRF523 IRF613 IRF523 IRF522 IRF522 IRF522 IRF633 IRF610 IRF610 IRF612 IRF541 IRF540 IRF641 IRF642 IRF741 IRF741 IRF740 IRF842 IRF611
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OCR Scan
IRF9613 IRFP333 VN0106N5 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF632 IRF640 IRF643 IRF711 IRF712 IRF713

IRF521

Abstract: IRF520 HAJims S S e m ico n d ucto r IRF520, IRF521, IRF522, IRF523 y y November 1997 8A and , IRF520 IRF521 IRF522 IRF523 PACKAGE TO-220AB TO-220AB TO-220AB TO-22QAB BRAND IRF520 IRF521 IRF522 IRF523 , , IRF522, IRF523 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF520 100 100 9.2 6.5 , IRF522 100 100 8 5.6 32 ±20 60 0.4 36 -55 to 175 300 260 IRF523 80 80 8 5.6 32 ±20 60 0.4 36 -55 to , IRF520, IRF522 IR F521, IRF523 Gate to Threshold Voltage Zero Gate Voltage Drain Current On-State
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OCR Scan
F521

IRF520 application note

Abstract: IRF52Q (Body Diode) , IN THIS AREA LIMITED *DS(ON) ÜRF520, lH r . : : 1 : IRF522. w = = ü = ¡= current 5 2 i , energy pulse circuits. Part Number IRF520 IRF521 IRF522 IRF523 RDS(on) 0.27Q 0 .2 7 0 0.36Q 0.36Q , applies to product with batch codes that begin with a digit, ie. 2A3B C-191 IRF520, IRF521, IRF522 , 0.40 ; ±20 IRF522, IRF623 ao . . 5.6 32 Gate-to-Source VWtage Single Pulse A/alanche Energy
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OCR Scan
IRF52Q IRF520 application note Irf520 spice AN975 A44B T-39-11 IRFS21 IRFS23 T0-220AB C-195

IRF50

Abstract: irf521 D N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES · · · · , achieve greater stability, reliability and ruggedness. PRODUCT SUMMARY Part No. IRF620 IRF521 IRF522 , D ; IRF520 IRF521 IRF522 IRF523 !' ; ABSOLUTE MAXIM UM RATINGS , range IRF520 100 8 32 ±20 40 IRF521 60 8 32 ±20 40 IRF522 100 7 28 ±20 40 IRF523 Units 60 7 28 ±20 40 V , ) Parameter b v dss Part No. Min. IRF520 IRF522 IRF521 IRF523 100 60 2 - Max. 4 500 250 1000 Unit V
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OCR Scan
IRF50 pin configuration IRF521

IRF520

Abstract: irf520 mosfet IRF520 IRF521 IRF522 IRF523 V ds 100V 80V 100 V 80V Ftas , ) Symbol Vdss V dgr Vgs Id Id Idm Ig m IRF520 100 100 IRF521 80 80 ±20 IRF522 100 100 IRF523 , Drain-Source Breakdown Voltage IRF520 IRF522 IRF521 IRF523 VGS(th| Igss Igss N-CHANNEL POWER MOSFETS (T c , Current (2) IRF520 IRF521 IRF522 IRF523 Static Drain-Source On-State Resistance (2) IRF520 IRF521 IRF522 , haracteristic Continuous Source Current (Body Diode) IRF520 IRF521 IRF522 IRF523 Pulse Source Current(Body Diode
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OCR Scan
power MOSFET IRF520 IRF520/521/522/523 IRF520/521Z522/523

IRF520

Abstract: irf521 3 PRODUCT SUMMARY Part Number IRF520 IRF521 IRF522 IRF523 V ds R d S(ok) Id 9.2A 9 2A 8 OA , 5.6 32 IRF522 100 100 IRF523 80 80 Unit Vdc Vdc Vdc Ade Ade Ade Ade mJ A Watts W /°C Tj , Tstg Tl , IRF520 IRF522 IRF521 IRF523 VGS(th) N-CHANNEL POWER MOSFETS (Tc = 2 5 °C unless otherwise specified , Drain-Source Current (2) IRF520 IRF521 IRF522 IRF523 Static Drain-Source On-State Resistance (2) IRF520 IRF521 IRF522 IRF523 Vds= V gs, Id = 2 5 0 hA Vgs = 2 0 V V qS= - 2 0 V VDs=Max. Rating, Vqs = 0 V VDs=M ax
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OCR Scan
TO 521 MH GG121S

U106

Abstract: IRF522 IRF522,523 7 AMPERES 1100, 60 VOLTS RDS(ON) = 04 " This series of N-Chanriel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device rugged-ness and reliability. This design has been optimized to give superior performance in most , paralleling maximum ratings (Tc= 25°C) (unless otherwise specified) RATING SYMBOL IRF522 IRF523 UNITS , ) | CHARACTERISTIC SYMBOL MIN TYP MAX UNIT off characteristics Drain-Source Breakdown Voltage IRF522 (VGS =
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OCR Scan
U106

1rf521

Abstract: IBF520-523 Dissipation Limited · Source-to-Drain Diode Characterized for Use With Inductive Loads IRF520 IRF521 IRF522 , , IRF522
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OCR Scan
1rf521 IBF520-523 p10n10e 1003C 1RF523 1RF521

irf5205

Abstract: IRF520 TECHNICAL DATA SEMICONDUCTOR IRF520 IRF521 IRF522 IRF523 TMOS POWER FETs 7 and 8 AMPERES rDS(on) = 0.3 OHM 60 and 100 VOLTS rDS(on) = 0.4 OHMS 60 and 100 VOLTS MOTOROLA P o w e r Field E ffe , 1 Unit V(BR)DSS IRF521, IRF523 IRF520, IRF522 dss !g s s f 'g s s r - - 0.2 1 100 100 60 100 - Vdc m Adc nAdc nAdc v GS(th) r DS|on) IRF520, IRF521 IRF522, IRF523 ·Dion) IRF520, IRF521 IRF522, IRF523 9FS IRF520, IRF521 IRF522, IRF523 2 4 Vdc Ohm - - 8 7 0.3 0.4
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OCR Scan
irf5205 MTP10N10E IRF520-523

IRF520

Abstract: irf521 IRF521 IRF522 IRF523 V ds 100 V 80V 100V 80V RoSlon) 0 .2 7 fi 0.27Í1 0 .3 6 ÌÌ 0 .3 6 0 Id 9.2A 9.2A , IRF520 100 100 IRF521 80 80 ±20 8.0 5.6 37 1 8.0 5.6 37 IRF522 100 100 IRF523 80 80 Unit Vdc Vdc Vdc Ade , /IRF522 IRF521/IRF523 VGS{th) loss Igss Idss Gate Threshold Voltage Gate-Source Leakage Forward , IRF522/IRF523 Static Drain-Source On-State Resistance (2) IRF520/IRF521 IRF522/IRF523 9 fs N-CHANNEL , /IRF521 IR F522/IRF523 Pulse Source Current(Body Diode)(3) IRF520/IRF521 IRF522/IRF523 Diode Forward
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OCR Scan
F522 IRF520/5217522/523

1RF122

Abstract: IRFS20 7.0 40 IRF522 80 0.18 14.0 75 VN0800D 80 0.25 12.0 75 VN0801D 80 4.0 1.7 20 VN88AD 80 4.5 1.6 , 1.2 6.25 VN35AB 1-6 Siliconix IRF120 â  -IRFI21- â  IRF122 â  IRF123 IRF520 â  IRF521 » IRF522 , IRF123 60V IRFS20 100 V 0.30Q 8A IRF521 60V TQ-220AB IRF522 100 V 0.40C2 . 7 A IRF523 60V , (Note 1) IRF122,123 IRF522, 523 0.30 0.40 Dynamic gfS Forward Transconductance All 1.5 2.5
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OCR Scan
VN1706D IRF130 1RF122 diode 60V 8A 0-30Q VN1201D VN120 IRF542 VN1000D

irf120

Abstract: oni 350 1.4 20 VN2406D Siliconix 1-5 IRF120 â  -IRFI21- â  IRF122 â  IRF123 IRF520 â  IRF521 » IRF522 , IRF123 60V IRFS20 100 V 0.30Q 8A IRF521 60V TQ-220AB IRF522 100 V 0.40C2 . 7 A IRF523 60V , (Note 1) IRF122,123 IRF522, 523 0.30 0.40 Dynamic gfS Forward Transconductance All 1.5 2.5
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OCR Scan
IRF150 IRF152 IRF140 IRF142 VN1000A VN1001A oni 350 VN64GA 2N6658 IRF132

VN0108N2

Abstract: 2SJ54 -220 IRF522 100 0.4 BUZ 23 100 0.20 TO-3 VN1000A 100 0.18 BUZ 24 100 0.06 TO-3 â'" â'" â'" BUZ 25 100 Q , VN1001D 100 0.25 12.0 75 IRF532 100 0.30 8.0 40 IRF520 TO-220AB 100 0.40 7.0 40 IRF522 80 0.18 14.0 , IRF120 â  -IRFI21- â  IRF122 â  IRF123 IRF520 â  IRF521 » IRF522 â  IRF523 100V N-Channel , TQ-220AB IRF522 100 V 0.40C2 . 7 A IRF523 60V ABSOLUTE MAXIMUM RATINGS (Tc= 25°C unless , > Resistance IRF120,121 IRF520, 521 0.25 0.30 n Vqs = 10V, lp = 4A (Note 1) IRF122,123 IRF522, 523 0.30
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OCR Scan
IRF232 IRF240 IRF822 IRF422 2SJ54 VN0108N2 IRF442 IRF452

IRF520

Abstract: IRF120 -220AB IRF120 IRF121 IRF122 IRF123 IRF520 IRF521 IRF522 IRF523 MTP10N08 MTP10N10 Part Number Voss RpS(on , 0.30 ft 8.0 A 5.0 A TO-220AB IRF521 60 V 0.30 ft 8.0 A 5.0 A IRF522 100 V 0.40 ft 7.0 A 4.0 A , MTP10N10 Rating MTP10N08 Rating IRF122/123 IRF522/523 Unit Vdss Drain to Source Voltage1 100 80 60 V
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OCR Scan
10n10 circuit diagram irf520 10N08 FT-10A IRF120-123/IRF520-523 MTP10N08/10N10 PC0987EF IRF120-123 PC09M1F PC09910F

jrf 520

Abstract: irf 44 n 9.2 A IRF520FI 100 V 0.27 n 7 A IRF521 80 V 0.27 fi 9.2 A IRF521FI 80 V 0.27 fi 7 A IRF522 100 V 0.36 fi 8 A IRF522FI 100 V 0.36 fi 6 A 1RF523 80 V 0.36 fi 8 A IRF523FI 80 V 0.36 fi 6 A â'¢ 80-100 , Fl for IRF522/523/522FI/523FI 0.27 0.36 Ã2 0 ENERGY TEST 'uis Undamped inductive switching current (single pulse) VDD= 30 V L = 100 ,tH starting Tj= 25°C for IRF520/521/520FI/521FI for IRF522
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OCR Scan
522FI jrf 520 irf 44 n schematic diagram UPS 600 Power structure IRF 520 TRANSISTOR n 522 T39N 520/FI-521 522/FI-523/FI ISOWATT22 T0-220 ISOWATT220 520FI

25cl640

Abstract: IRF 640 mosfet , IRF522, and IRF523 are n-channel enhancement-mode silicon-gate power field-effect transis tors. IRF520R , 15 & 16. IRF521 IRF521R 80 80 9.2 6.5 37 IRF522 IRF522R IRF523 IRF523R 80 80 100 100 9.2
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OCR Scan
25cl640 IRF 640 mosfet F520R 75BVOSS
Showing first 20 results.