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IRF4104PBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 visit Digikey Buy

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IRF4104PBF Datasheet

Part Manufacturer Description PDF Type
IRF4104PBF International Rectifier Original
IRF4104PBF International Rectifier 40V Single N-Channel Automotive HEXFET Power MOSFET in a TO-220AB package; Similar to IRF4104 with Lead Free Packaging Original

IRF4104PBF

Catalog Datasheet MFG & Type PDF Document Tags

AN-1005

Abstract: IRF1010 PD - 95468A IRF4104PbF IRF4104SPbF IRF4104LPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 5.5m G Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low , . Absolute Maximum Ratings ID = 75A S D2Pak IRF4104SPbF TO-220AB IRF4104PbF Parameter TO
International Rectifier
Original
AN-1005 IRF1010 IRF4104P IRF4104SP IRF4104LP EIA-418 AN-994
Abstract: PD - 95468A IRF4104PbF IRF4104SPbF IRF4104LPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 5.5mâ"¦ G Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low , . Absolute Maximum Ratings ID = 75A S D2Pak IRF4104SPbF TO-220AB IRF4104PbF TO International Rectifier
Original

CV120

Abstract: IRF4104 PD - 95468 IRF4104PbF IRF4104SPbF IRF4104LPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature
International Rectifier
Original
IRF4104S IRF4104 IRF4104L CV120 IRF4104S/LP

IRLML0030

Abstract: IRLB3034 IRF4104PBF ST 44 23 33 TO-247 IRF2804PBF IRL1404ZPBF IRF1404ZSPBF 75 42 100 12.7 , IRFB3006PBF IRLS3036-7PPBF IRFS3006-7PPBF 91 26 IRFZ44ZPBF L8 200 12 13.4 IRF4104PBF , 200 12 13.4 IRF4104PBF ST 44 23 33 TO-247 IRF2804PBF IRL1404ZPBF
International Rectifier
Original
IRLML0030 IRLB3034 irfp4004 IRFB4110 irls4030 IRFB4020PBF

IRLML2502TRPBF

Abstract: IRLML2803TRPBF IRF7469PBF IRF7471TRPBF IRF7471PBF IRF7842PBF IRFR3504ZPBF IRF4104PBF IRF1404ZPBF IRF2804PBF IRF2804LPBF
-
Original
IRLML2402TRPBF IRLML2502TRPBF IRLML2803TRPBF IRF7821TRPBF IRFR3709ZTRPBF IRF7413ZTR IRL3302PBF IRL3202PBF IRL3502SPBF IRLMS1902TRPBF IRF7101PBF

IRF4104S

Abstract: IRF4104 PD - 95468 IRF4104PbF IRF4104SPbF IRF4104LPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature
International Rectifier
Original
IRF Power MOSFET code marking

IRF4104

Abstract: IRF4104L PD - 95468 IRF4104PbF IRF4104SPbF IRF4104LPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature
International Rectifier
Original