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AUIRF2804L Infineon Technologies AG Power Field-Effect Transistor, 270A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN visit Digikey Buy

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Part : AUIRF2804L Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €1.3455 Price Each : €2.4265
Part : AUIRF2804L-313 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $1.6893 Price Each : $1.9157
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Part : AUIRF2804L Supplier : International Rectifier Manufacturer : ComSIT Stock : 250 Best Price : - Price Each : -
Part : AUIRF2804L Supplier : Infineon Technologies Manufacturer : Rutronik Stock : 100 Best Price : $2.29 Price Each : $2.44
Part : IRF2804LPBF Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 130 Best Price : $2.0020 Price Each : $2.8034
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Part : IRF2804LPBF Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 214 Best Price : $1.65 Price Each : $3.3120
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IRF2804L Datasheet

Part Manufacturer Description PDF Type
IRF2804L International Rectifier HEXFET Power Mosfet Original
IRF2804L International Rectifier 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF2804L with Standard Packaging Original
IRF2804LPBF International Rectifier 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF2804L with Lead-Free Packaging. Original
IRF2804LPBF International Rectifier AUTOMOTIVE MOSFET Original

IRF2804L

Catalog Datasheet MFG & Type PDF Document Tags

IRF2804L

Abstract: IRF2804S PD - 94495B IRF2804S IRF2804L HEXFET® Power MOSFET Features l l l l l Advanced , -262 IRF2804L Absolute Maximum Ratings Parameter ID @ TC ID @ TC ID @ TC IDM PD @TC = 25°C = 100 , 12/11/02 IRF2804S/IRF2804L Electrical Characteristics @ TJ = 25°C (unless otherwise specified , sample failure population. 100% tested to this value in production. www.irf.com IRF2804S/IRF2804L , . Typical Forward Transconductance Vs. Drain Current 3 IRF2804S/IRF2804L 12000 20 10000
International Rectifier
Original
IRF2804S/IRF2804L EIA-418
Abstract: PD - 94495A IRF2804S IRF2804L HEXFET® Power MOSFET Features l l l l l Advanced , -262 IRF2804L Absolute Maximum Ratings Parameter ID @ TC ID @ TC ID @ TC IDM PD @TC = 25°C = 100 , Rectifier. www.irf.com 1 10/10/02 IRF2804S/IRF2804L Electrical Characteristics @ TJ = 25 , sample failure population. 100% tested to this value in production. www.irf.com IRF2804S/IRF2804L , /IRF2804L 12000 20 10000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + C International Rectifier
Original
IRL3103L

1080S

Abstract: IRF2804S/IRF2804L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Qg Q gs Qgd td , sample failure population. 100% tested to this value in production. IRF2804S/IRF2804L D2Pak Package , P G ! Ã F @ @ X G Ã @ I DG 9 IRF2804S/IRF2804L D2Pak Tape & Reel
International Rectifier
Original
1080S
Abstract: PD - 94436C IRF2804 IRF2804S IRF2804L AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175° Operating Temperature C Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS(on) = 2.0mâ"¦Â‰ G Description ID = 75A S Specifically designed for Automotive applications, this , of other applications. D2Pak IRF2804S TO-220AB IRF2804 TO-262 IRF2804L Absolute International Rectifier
Original
IRF2804/S/L

IRF2804 EQUIVALENT

Abstract: irf2804 PD - 94436C IRF2804 IRF2804S IRF2804L AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S Specifically designed for Automotive applications, this HEXFET® Power MOSFET , . D2Pak IRF2804S TO-220AB IRF2804 TO-262 IRF2804L Absolute Maximum Ratings Parameter Max
International Rectifier
Original
IRF2804 EQUIVALENT SMD mosfet MARKING code TC SMD INDUCTOR Marking Code AN-994 SL1600 SMD mosfet MARKING code T

IRF2804

Abstract: SMD mosfet MARKING code TC PD - 94436C IRF2804 IRF2804S IRF2804L AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S Specifically designed for Automotive applications, this HEXFET® Power MOSFET , . D2Pak IRF2804S TO-220AB IRF2804 TO-262 IRF2804L Absolute Maximum Ratings Parameter Max
International Rectifier
Original

diode SMD ultra fast st B4

Abstract: smd code marking A6 PD - 95332 AUTOMOTIVE MOSFET Features l l l l l l IRF2804PbF IRF2804S IRF2804L HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax TO-220 is available in PbF as a Lead-Free VDSS = 40V RDS(on) = 2.0m G S Description Specifically designed for Automotive applications, this HEXFET , applications. ID = 75A TO-220AB IRF2804PbF D2Pak IRF2804S TO-262 IRF2804L Absolute Maximum
International Rectifier
Original
diode SMD ultra fast st B4 smd code marking A6 IRF2804P

IRFP460Z

Abstract: IRF3205 application TO-220: Standard Gate IRL2910 IRF2804L IRF3205 IRF3205 IRF3205 IRF3205 IRFZ44N IRFZ46N
International Rectifier
Original
IRFP460Z IRF3205 application IRF3205 equivalent irfp4004 power MOSFET IRFP460z IRF3808 equivalent HFA16TB120 C/15PSIG 20ETS12S 15ETS16 20ETS16 10TTS08

IRF1830G

Abstract: IRF1830 PD - 95332A IRF2804PbF IRF2804SPbF IRF2804LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S Specifically designed for Automotive applications, this , of other applications. TO-220AB IRF2804PbF D2Pak IRF2804SPbF TO-262 IRF2804LPbF
STMicroelectronics
Original
IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AO4405 AO4407 AO4408 AO4409 AO4410 AO4411

IRU1239SC

Abstract: iru1239 PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S This HEXFET® Power MOSFET utilizes the latest processing techniques to , of other applications. TO-220AB IRF2804PbF D2Pak IRF2804SPbF TO-262 IRF2804LPbF
Shenzhen Shouhe Technology
Original
IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 100MT160PAPBF 100MT160PA 100MT160PBPBF T85HFL60S05 T85HFL80S05 T90RIA10

irfb4115

Abstract: BTY79 equivalent PD - 95332A IRF2804PbF IRF2804SPbF IRF2804LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S Specifically designed for Automotive applications, this , of other applications. TO-220AB IRF2804PbF D2Pak IRF2804SPbF TO-262 IRF2804LPbF
Element14 Catalog
Original
irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g SSC-25 F155-6A F155-10A F165-15A F175-25A

smd marking XF

Abstract: AN-994 PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0mâ"¦Â‰ G Description ID = 75A S This HEXFET® Power MOSFET utilizes the latest processing techniques to , of other applications. TO-220AB IRF2804PbF D2Pak IRF2804SPbF TO-262 IRF2804LPbF
International Rectifier
Original
smd marking XF to262 pcb footprint IRF2804SP IRF2804LP IRF2804/S/LP

AN-994

Abstract: PD - 95332A IRF2804PbF IRF2804SPbF IRF2804LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S Specifically designed for Automotive applications, this , of other applications. TO-220AB IRF2804PbF D2Pak IRF2804SPbF TO-262 IRF2804LPbF
International Rectifier
Original

RSQ035P03

Abstract: PT-2130FP IRF7469PBF IRF7471TRPBF IRF7471PBF IRF7842PBF IRFR3504ZPBF IRF4104PBF IRF1404ZPBF IRF2804PBF IRF2804LPBF
-
OCR Scan
RSQ035P03 PT-2130FP CCI SMART POSITIONER C330 SCA103T TEA 1732 NXP pj 39 ZENER 4K AT-DEC71 LN11CP23 P393-ND LN11WP24 P395-ND LN11WP34

AN-994

Abstract: PD - 95332A IRF2804PbF IRF2804SPbF IRF2804LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S Specifically designed for Automotive applications, this , of other applications. TO-220AB IRF2804PbF D2Pak IRF2804SPbF TO-262 IRF2804LPbF
International Rectifier
Original
Abstract: PD - 95332A IRF2804PbF IRF2804SPbF IRF2804LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S Specifically designed for Automotive applications, this , of other applications. TO-220AB IRF2804PbF D2Pak IRF2804SPbF TO-262 IRF2804LPbF International Rectifier
Original