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Part : IRF243 Supplier : International Rectifier Manufacturer : Rochester Electronics Stock : 99 Best Price : $1.68 Price Each : $2.06
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IRF243 Datasheet

Part Manufacturer Description PDF Type
IRF243 Fairchild Semiconductor N-Channel Power MOSFETs, 18A, 150-200V Scan
IRF243 FCI POWER MOSFETs Scan
IRF243 Frederick Components Power MOSFET Selection Guide Scan
IRF243 General Electric Power Transistor Data Book 1985 Scan
IRF243 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. Scan
IRF243 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF243 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan
IRF243 Motorola Switchmode Datasheet Scan
IRF243 Motorola European Master Selection Guide 1986 Scan
IRF243 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan
IRF243 N/A Shortform Datasheet & Cross References Data Scan
IRF243 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF243 N/A Semiconductor Master Cross Reference Guide Scan
IRF243 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
IRF243 N/A FET Data Book Scan
IRF243 National Semiconductor N-Channel Power MOSFETs Scan
IRF243 Samsung Electronics N-CHANNEL POWER MOSFET Scan
IRF243 Siliconix MOSPOWER Design Data Book 1983 Scan
IRF243 Vishay Siliconix Shortform Siliconix Datasheet Scan
IRF243R Harris Semiconductor Power MOSFET Data Book 1990 Scan
Showing first 20 results.

IRF243

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: -31-11 IRF241, IRF243 Power MOS Field-Effect Transistors File Number 1584 N-Channej Enhancement-Mode , impedance â  Majority carrier device The IRF241 and IRF243 are n-ohannel enhancement-mode .silicon-gate , IRF243 Units Vqs drain â'¢ Source Voltage © 150 150 V Vogr Drain - Gate Voltage (Rqs s 20 Kft) © 150 , Otherwise Specified) ODlflSTG t~ T-^v-n 01E 18290 D I a7 If _ Standard Power MOSFETs IRF241, IRF243 Parameter Type Min. Typ. Max. Units Test Conditions BVqss Drain â'¢ Source Breakdown Voltage IRF241 IRF243 -
OCR Scan
T 1829-1 307S ic l00a 92CS-37801 IHF241
Abstract: IRF242 200V 0.22 0 16A IRF243 150V 0.22 0 16A TO-3 MAXIMUM RATINGS Characteristic Symbol IRF240 IRF241 IRF242 IRF243 Unit Drain-Source Voltage (1) Vdss 200 150 200 150 Vdc Drain-Gate Voltage (Rgs , BVdss IRF240 IRF242 200 - - V Vqs=0V ID=250JJA IRF241 IRF243 150 - - V Gate Threshold Voltage , IRF242 IRF243 16 - - A Static Drain-Source On-State Resistance (2) RüSfon) IRF240 IRF241 - 0.13 0.18 0 Ves=10V, Id=10A IRF242 IRF243 - 0.20 0.22 n Forward Transconductance (2) gis ALL 6.0 9.5 â'" 0 -
OCR Scan
mosfet IRF240 IRF240/241/242/243
Abstract: Package IRF243 Product Summary Part Number They are well suited for applications such as , 0 .2 2 0 16A IRF243 The H EX FE T transistors also feature all of the well established , with a digit, ie. 2A3B G-73 HE IRF240, IRF241, IRF242, IRF243 Devices ' ' O I , IRF240, IRF241 IRF242r IRF243 Units Id @ T q â  25°C Continuous Drain Current 18 16 , 0.18 0.18 0.22 18 IRF242 IRF243 ALL 2.0 - 4.0 ALL 6.7 10 - - - -
OCR Scan
T0-204AE T-39-13 RF240 RF241
Abstract: MOSFETS PRODUCT SUMMARY Part Num ber IRF240 IRF241 IRF242 IRF243 V ds 2 0 0V 150V 2 0 0V 150V RpS(on , 16 10 64 16 10 64 IRF242 200 200 IRF243 150 150 U nit Vdc Vdc Vdc Ade Ade Ade Ade Watte W /°C °C , Symbol Type Min IR F240 200 IRF242 BV dss IRF241 15 0 IRF243 V(3S , IRF241 IRF242 IRF243 IRF240 IRF241 1RF242 IRF243 IRF240 IRF241 IRF242 IRF243 ALL Min - Is Pulse -
OCR Scan
1rf240 DIODE M4A 1RF240/241Z242/243 00GS435
Abstract: Standard Power MOSFETs- IRF240, IRF241, IRF242, IRF243 Power MOS Field-Effect Transistors , IRF240, IRF241, IRF242, and IRF243 are n-channel enhancement-mode silicon-gate power field-effect , DESIGNATION JEDEC TO-204AE Absolute Maximum Ratings Parameter IRF240 IRF241 IRF242 IRF243 Units Vqs Drain , case for 10s) °C 3-84. Standard Power MOSFETs IRF240, IRF241, IRF242, IRF243 Electrical , BVqss Drain - Source Breakdown Voltage IRF240 IRF242 200 - - V vGS = ov lD = 250^A IRF241 IRF243 150 -
OCR Scan
T0204AE 92CS-3374I VDS-100V 08TAIN
Abstract: MOTOROLA TECHNICAL DATA SEM ICO NDUCTOR IRF240 IRF241 IRF243 TMOS POWER FETs 16 and 18 AMPERES rDS(on) = OHM 150 and 200 VOLTS rDS(on) = 0.22 OHMS 150 VOLTS Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Power FETs are designed for low voltage, high , (BR)DSS IRF240 IRF241, IRF243 200 150 Vdc toss 'GSSF - - 0.2 1 100 100 m Adc nAdc nAdc 'gssr v G SIthl r DS(on) IRF240, IRF241 IRF243 *D(on) IRF240, IRF241 IRF243 SFS IRF240, IRF241 IRF243 -
OCR Scan
power MOSFET IRF240 IRF24Q
Abstract: -3 IRF242 â'" â'" IRF243 150 0.22 TO-3 IRF243 â'" â'" IRF250 200 0.085 TO-3 IRF250 â'" â'" IRF251 150 , IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 -
OCR Scan
IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SJ48 equivalent IRF223 IRF122 PWR-6501
Abstract: IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 , â  IRF243 IRF640 â  IRF641 â  IRF642 â  IRF643 200V N-Channel Enhancement-Mode MOSPOWER a , -3 IRF242 200 0.22ÃT 16Ã' . IRF243 150 IRF640 200 0.18ÃÃ 18A IRF641 150 TO-220AB IRF642 200 -
OCR Scan
IRF450 IRF452 IRF440 IRF442 VNP002A VN5001A diodes IN4723 VN5002A
Abstract: -204AE IRF241 IRF242 TO -204AE IRF242 IRF243 TO-2Q4AE Symbol IRF240 IRF243 , o rp o ra tio n 1 9 9 8 ^ , File Number 1584.2 IRF240, IRF241, IRF242, IRF243 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF240 IRF241 IRF242 IRF243 , , IRF243 150 - - V 2.0 - 4.0 V V DS = Rated BVd s s , V g s = 0V - - 25 , 18 - - A IRF242, IRF243 16 - - A - - ±100 nA IRF240, IRF241 -
OCR Scan
TA17422 RF243
Abstract: -3 IRF242 â'" â'" IRF243 150 0.22 TO-3 IRF243 â'" â'" IRF250 200 0.085 TO-3 IRF250 â'" â'" IRF251 150 -
OCR Scan
2SK132 2SK133 2SK176 IRF131 IRF143 2sk135 equivalent 2SK134 equivalent IRF150 To3 package 2SJ50 equivalent HPWR 6501 2SJ49 equivalent 2SK134 2SK135 IRF222 2SK175
Abstract: -3 IRF242 â'" â'" IRF243 150 0.22 TO-3 IRF243 â'" â'" IRF250 200 0.085 TO-3 IRF250 â'" â'" IRF251 150 , IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 -
OCR Scan
2SK259 irf740 equivalent IRF450 equivalent irf340 "cross reference" irf150 IRF351 2SK220 2SK221 IRF323 2SK260 IRF322
Abstract: -3 IRF242 â'" â'" IRF243 150 0.22 TO-3 IRF243 â'" â'" IRF250 200 0.085 TO-3 IRF250 â'" â'" IRF251 150 , IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 -
OCR Scan
2SJ49 2sk134 hitachi 2sk135 equivalent irf840 2SJ47 2SJ48 2SJ49 2SJ50 IRF120 IRF121
Abstract: (FLANGE) GATE · High In p ut Im pedance D escription The 1RF240, IRF241, IRF242, and IRF243 are , IRF243R types are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level , 5 t o +1 5 0 300 IRF242 IRF242R 200 200 16 10 64 ±20 125 1.0 64 580 -5 5 t o + 150 300 IRF243 IRF243R 150 150 16 10 64 ±2 0 125 1.0 64 580 -5 5 t o + 150 300 UNITS V V A A A V 200 200 18 11 72 , d / / C T i IRF240, IRF241, IRF242, IRF243 I V q s s . O R A I* TO SOURCE BREAKOOWN -
OCR Scan
IRF240R 1RF241 free IR circuit diagram F240/241/242/243 F240R/241R/242R/243R IRF241R GURE14
Abstract: ±100 150 0.25 1600 TO-2Q4AE IRF242 ±100 1600 380» T0-204AE IRF243 125 ±20 2.0 0.25 380 , 0.22 16 TO-3 IRF243 SAMSUNG N 150 0. 22 16 TO-3 IRF250 SAMSUNG N 200 -
OCR Scan
IRF245 IRF252 irf211 irf244 Irf154 IRF154 N T0-204AA TQ-204AE TQ-204AA IRF25I 10-204AE
Abstract: 1.2 6.25 VN35AB 1-14 Siliconix ss ota IRF240 â  IRF241 â  IRF242 â  IRF243 IRF640 â  IRF641 â , ' . IRF243 150 IRF640 200 0.18ÃÃ 18A IRF641 150 TO-220AB IRF642 200 0.220 16A IRF643 150 -
OCR Scan
IRF630 IRF632 IRF620 IRF622 VN1706D IRF631 IRF540 VN-99-A IRF633
Abstract: ss ota IRF240 â  IRF241 â  IRF242 â  IRF243 IRF640 â  IRF641 â  IRF642 â  IRF643 200V N-Channel Enhancement-Mode MOSPOWER a Siliconix Advanced Information These power FETs are designed especially for offline switching regulators, converters, solenoid and relay drivers. SèSè atee FEATURES â  No Second Breakdown â  High Input Impedance â  Internal Drain-Source Diode â  Very Rugged , IRF240 200 0.180 18A IRF241 150 TO-3 IRF242 200 0.22ÃT 16Ã' . IRF243 150 IRF640 200 0.18à -
OCR Scan
IN4723
Abstract: -3 IRF242 â'" â'" IRF243 150 0.22 TO-3 IRF243 â'" â'" IRF250 200 0.085 TO-3 IRF250 â'" â'" IRF251 150 , IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 IRF231 150 0.6 8.0 75 -
OCR Scan
IRF720 IRF123 IRF130 IRF132 IRF133 IRF140 IRF141
Abstract: -3 IRF242 â'" â'" IRF243 150 0.22 TO-3 IRF243 â'" â'" IRF250 200 0.085 TO-3 IRF250 â'" â'" IRF251 150 -
OCR Scan
irf 150 equivalent IRF220 equivalent IRF233 IRF331 IRF 50A irf 111 IRF142 IRF151 IRF152 IRF153 IRF220
Abstract: Requirements â'¢ Ease of Paralleling IRF240 IRF241 IRF242 IRF243 TO-220AB IRF640 IRF641 IRF642 IRF643 , n 18 A 11 A TO-204AE IRF241 150 V 0.18 ft 18 A 11 A IRF242 200 V 0.22 n 16 A 10 A IRF243 150 V -
OCR Scan
RF640 IRF 1640 IRF640-643 IRF-240 IRF240-243/IRF640-643 IRF240/242 IRF640/642 IRF241/243 IRF641/643 PCOSB41F
Abstract: !) ss ota IRF240 â  IRF241 â  IRF242 â  IRF243 IRF640 â  IRF641 â  IRF642 â  IRF643 200V , IRF240 200 0.180 18A IRF241 150 TO-3 IRF242 200 0.22ÃT 16Ã' . IRF243 150 IRF640 200 0.18Ã -
OCR Scan
VN1000D IRF522 IRF232 IRF822 IRF842 IRF422 equivalent IRF640 FI IRF640 equivalent BUZ 72 A equivalent sony 2sj54 VN0108N2 BUZ34 VN1000A
Abstract: Description The IRF240, IRF241, IRF242, and IRF243 are n-channel enhancement-mode silicon-gate power , Soldering.T[_ (0.063" (1.6mm) from case for 10s) IRF241 IR F241R IRF242 IRF242R IRF243 IRF243R , 005311!, 17b â  HAS IRF240, IRF241, IRF242, IRF243 IRF240R. IRF241R, IRF242R, ÃRF243R I -
OCR Scan
F240R T0-204A T0-80URCE FIGURE14
Abstract: -3 IRF242 â'" â'" IRF243 150 0.22 TO-3 IRF243 â'" â'" IRF250 200 0.085 TO-3 IRF250 â'" â'" IRF251 150 , 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 IRF231 150 0.6 8.0 75 IRF233 150 -
OCR Scan
BUZ24 VN67AF cross reference supertex TO-3 to202 pinout 2SJ54 IRF320 IRF722
Abstract: ±100 150 0.25 1600 TO-2Q4AE IRF242 ±100 1600 380» T0-204AE IRF243 125 ±20 2.0 0.25 380 , 0. 18 18 TO-3 IRF242 SAMSUNG N 200 0.22 16 TO-3 IRF243 SAMSUNG N 150 , ±20 16 125 ±100 ±20 250 200 2.0 4.0 0.22 10 10 16 10 6.0 10 1600 750 300 25 TO-204AE IRF243 SILICONIX -
OCR Scan
1RF243 irf113 1RF222 IRF254 IRF341 1RF232 IRF32I
Showing first 20 results.