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IRF1503STRLPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
IRF1503SPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
IRF1503PBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 visit Digikey Buy

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IRF150 Datasheet

Part Manufacturer Description PDF Type
IRF150 Harris Semiconductor Power MOSFET Selection Guide Original
IRF150 International Rectifier HEXFET Transistor Original
IRF150 Intersil 40A, 100V, 0.055 ?, N-Channel Power MOSFET Original
IRF150 Nikkohm 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED Original
IRF150 Semelab N-Channel Power MOSFET Original
IRF150 Fairchild Semiconductor N-Channel Power MOSFETs, 40 A, 60 V/100 V Scan
IRF150 FCI POWER MOSFETs Scan
IRF150 Frederick Components Power MOSFET Selection Guide Scan
IRF150 General Electric Power Transistor Data Book 1985 Scan
IRF150 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. Scan
IRF150 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF150 International Rectifier N-Channel Power MOSFETs Scan
IRF150 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan
IRF150 IXYS High Voltage Power MOSFETs Scan
IRF150 IXYS High Voltage Power MOSFETs Scan
IRF150 IXYS (IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE Scan
IRF150 Motorola European Master Selection Guide 1986 Scan
IRF150 Motorola Switchmode Datasheet Scan
IRF150 N/A Semiconductor Master Cross Reference Guide Scan
IRF150 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
Showing first 20 results.

IRF150

Catalog Datasheet MFG & Type PDF Document Tags

IRF150

Abstract: circuits of IRF150 PD - 90337G IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL , Part Number IRF150 BVDSS 100V RDS(on) 0.055â"¦ ID 38A The HEXFET®technology is the key , last page www.irf.com 1 08/21/01 IRF150 Electrical Characteristics @ Tj = 25°C (Unless , IRF150 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com , IRF150 13 a& b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical
International Rectifier
Original
circuits of IRF150

LD20A

Abstract: ^DS(on) 0.055 a 0.055 fi 0.08 0.08 ·d 40 A 40 A 33 A 33 A TYPE IRF150 IRF151 IRF152 IRF153 VDss , voltage drain current (VGS = 0) Gate-body leakage current (VDg = 0) Iq- 250 fiA for IRF150/IRF152 for , current Id - 250 /(A 2. 40 33 0.055 0.08 4 V A A 0 0 VDS > Id (on)x RDS(on) max VGS = 10 V for IRF150/IRF151 for IRF152/IRF153 VGS= 1 0 V for IRF150/IRF151 for IRF152/IRF153 lD= 20 A RDS (on) Static , V starting Tj = 25°C for IRF150/IRF151 for IRF152/IRF153 L = 100 jkH 40 33 A A DYNAMIC 9(8
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OCR Scan
LD20A 00217S2 T-39-13 D021753

irf150

Abstract: MOSFET IRF150 IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET · 40A, 100V , Components to PC Boards" Symbol BRAND D IRF150 TO-204AE IRF150 NOTE: When ordering, include , IRF150 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage , . . . . . . . Tpkg IRF150 100 100 40 25 160 ±20 150 1.2 150 -55 to 150 UNITS V V , IRF150 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to DrainCurrent
Intersil
Original
TA17421 TB334 MOSFET IRF150 40A100V IRF-150 ISO9000

irf150

Abstract: IRF150 MOSFET N-CHANNEL IRF150/151/152/153 POWER MOSFETS FEATURES â'¢ Low RDS(on) â'¢ Improved inductive ruggedness â , ) PRODUCT SUMMARY ' Part Number Vos Ros , â¡DOSOflS 4 |u IRF150/151/152/153 98D 05085 D T-3^-/3 N-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS , Drain-Source Breakdown Voltage . BVoss IRF150 IRF152 100 V Vgs=0V lo=250f/A IRF151 IRF153 60 - - V Gate
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OCR Scan
IRF150 MOSFET LS 5087 IRF150 To3 package IRF150 "on semiconductor" ti414E IRF150/151/152/153

IRF150

Abstract: IRF150 MOSFET MOSFET DATA IRF150-152 ELECTRICAL CHARACTERISTICS OFF CHARACTERISTICS D rain-Source Breakdown , Min Max [ Unit V{BR)DSS IRF150. IRF152 IRF151 'DSS TJ = 125°C) 'g s s f gssr - - 0.2 1 , MOTOROLA TECHNICAL DATA SEMICONDUCTOR IRF150 IRF151 IRF152 TMOS POWER FETs 33 and 40 , Transconductance (V d s > 2.2 v, id = 20 a i (V d s 3s 2.6 V, id = 20 A) IRF150, IRF151 IRF152 *D(on) IRF150, IRF151 IRF152 9FS IRF150, IRF151 IRF152 9 9 - v G Slth) rDS(on) 2 4 Vdc Ohm - - 40
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OCR Scan

IRF150 MOSFET

Abstract: IRF150 DD0SDÛ4 a f L' IRF150/151/152/153 FEATURES Low RDS(on) Improved inductive ruggedness Fast , SUMMARY ' Part Number IRF150 IRF151 IRF152 IRF153 Vds 100V 60V 100V 60V R os , 150 1.2 - 5 5 to 150 300 IRF150 100 100 IRF151 60 60 ±20 33 20 132 33 20 132 IRF152 100 100 IRF153 60 , Type Min IRF150 100 IRF152 BVoss IRF151 60 IRF153 ALL ALL ALL ALL 2.0 - - - - IRF150 40 IRF151 lD , )XRDS(on) max., fo=20A On-State Drain-Source Current (2) IRF150 IRF151 Static Drain-Source
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OCR Scan
IRF150 on semi 00GS435

IRF150

Abstract: IRF152 S E M I C O N D U C T O R IRF150, IRF151, IRF152, IRF153 33A and 40A, 60V and 100V, 0.055 and , Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER IRF150 IRF151 IRF152 IRF153 PACKAGE TO-204AE TO-204AE TO-204AE TO-204AE BRAND IRF150 IRF151 IRF152 IRF153 G S , 1824.2 1 IRF150, IRF151, IRF152, IRF153 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF150 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS Drain to
Harris Semiconductor
Original
12V 40A voltage regulators

TRANSISTORS 132 GD

Abstract: IRF150 Semiconductor IRF150, IRF151, IRF152, IRF153 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm , Components to PC Boards" Symbol Ordering Information PART NUM BER IRF150 IRF151 IRF152 IRF153 PACKAGE TO -204AE TO -204AE TO -204AE TO-2Q4AE BRAND IRF150 IRF151 IRF152 IRF153 NOTE: W hen ordering, include , 1997 , File Number 1824.2 IRF150, IRF151, IRF152, IRF153 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF150 Drain to Source Voltage (Note 1 ) .
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OCR Scan
TRANSISTORS 132 GD kiv-8 RF150 RF152 RF153

IRF150

Abstract: circuits of IRF150 -' IRF150-153 N-Channel Power MOSFETs, 40 A, 60 V/100 V Power And Discrete Division T-39-13 Description , SEMICONDUCTOR fi4 341^74 00E7Ã71 â¡ IRF150-153 T-39-13 Electrical Characteristics (Tc = 25°C unless , SEMICONDUCTOR Û4 DÃ'J 3MbTt= 74 Ã0E7Ã7E 1 IRF150-153 t_39_13 Electrical Characteristics (Cont.) (Te = 25 , SEMICONDUCTOR A4 MT| 3MbTb7H GD27Ã73 3 3469674 FAIRCHILD SEMICONDUCTOR 84D 27873 D . IRF150-153 t , Rating IRF150/152 Rating IRF151/153 Unit Vdss Drain to Source Voltage1 100 60 V Vdgr Drain to Gate
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OCR Scan
IRF150/152 IRF150/151 IRF152/153 PC69341F

IRF150

Abstract: MOSFET IRF150 _ Standard Power MOSFETs File Number 1824 IRF150, IRF151, |RF152, IRF153 Power MOS Field-Effect ,   Linear transfer characteristics â  High input impedance â  Majority carrier device The IRF150 , DESIGNATION 92CS-3780I JEDEC TO-2Q4AE Absolute Maximum Ratings Parameter IRF150 IRF151 IRF152 IRF153 Units , ?-/3 Standard Power MOSFETs _!_ IRF150, IRF151, IRF152, IRF153 Electrical Characteristics = 25Â , Breakdown Voltage IRF150 IRF152 100 - - V VQS =â  OV lD = 2 50/i A IRF151 IRF153 60 - - V ^GSfth
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OCR Scan
7S001 R01E IRF160 IRF162 9ZCS-3374I

IRF150

Abstract: irf 151 MODE POWER MOS TRANSISTORS TYPE IRF150 IRF151 IRF152 IRF153 V DSS RDS(on) 0.055 n 0.055 n 0.08 , leakage current (VDS = 0) lD= 250 /¿A for IRF150/IRF152 for IRF151/IRF153 VGS= 0 100 60 Tc = 125 , ta - 250 /xA V GS= 1 0 V 2 40 33 4 V A A S> *D (on) x ^ D S to n ) m ax for IRF150/IRF151 for IRF152/IRF153 ^ D S (on) Static drain-source on resistance VGS = 10 V for IRF150/IRF151 , current (single pulse) VDD= 30 V starting T j= 2 5 °C for IRF150/IRF151 for IRF152/IRF153 L = 100 40 33 A
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OCR Scan
irf 151 irf 150 IRF150/IRF151

IRF150

Abstract: irf 150 ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF150 IRF151 IRF152 IRF153 V DSS ^D S(on) *D 100 V 60 V 100 , IRF150/IRF152 for IRF151/IRF153 VDS= Max Rating VDS= Max Rating Vg s = ± 2 0 V X VGS= 0 100 60 0.8 Tc , ) x ^DS(on) max for IRF150/IRF151 for IRF152/IRF153 ^DS (on) Static drain-source on resistance VGS= 1 0 V for IRF150/IRF151 for IRF152/IRF153 lD = 20 A 0.055 0.08 Q Q ENERGY TEST ^ IS Unclamped inductive switching current (single pulse) VDD= 30 V starting T j= 25 °C for IRF150/IRF151 for
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OCR Scan
SC-0338 SC-0339 SC-02/

IRF150

Abstract: IRF150 MOSFET HARRIS S E M I C O N D U C T O R IRF150, IRF151, IRF152, IRF153 33A and 40A, 60V and 100V , IRF150 IRF151 IRF152 IRF153 PACKAGE T0-204AE T0-204AE T0-204AE TO-2Q4AE BRAND IRF150 IRF151 IRF152 IRF153 , Procedures. Copyright © Harris Corporation 1997 , File Number 1824.2 IRF150, IRF151, ÌRF152, IRF153 Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified IRF150 IRF151 60 60 40 25 160 ±20 150 , Drain to Source Breakdown Voltage IRF150, IRF152 IRF151, IRF153 Gate to Threshold Voltage Zero Gate
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OCR Scan

IRF250

Abstract: IRF150 IRF150 IRF150 IRF150 IRF150 IRF150 IRF250 IRF250 IRF250 IRF250 IRF250 IRF350 IRF350 IRF350 IRF350 IRF350
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OCR Scan
irf054 SHD2301 SHD2191 SHD2181 SHD2181A SHD2181B SHD2302

IRF 543 MOSFET

Abstract: irf150 PD - 90337G IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL , Number IRF150 BVDSS 100V RDS(on) 0.055 ID 38A The HEXFETtechnology is the key to , /21/01 IRF150 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter , Conditions Typical socket mount For footnotes refer to the last page 2 www.irf.com IRF150 , IRF150 13 a& b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical
International Rectifier
Original
IRF 543 MOSFET

irf150

Abstract: VN64GA = 25°C unless otherwise noted) Drain-Source Voltage , . 100V IRF153. 60V Drain-Gate Voltage , 150 irf150 100 0.08 33.0 150 irf152 100 0.085 27.0 125 irf140 100 0.11 24.0 125 irf142 100 , 1.4 20 vn2406d Siliconix 1-5 IRF150 â  IRF151 100V IRF152 â  IRF153 N-Channel Enhancement Mode , Designs â  Improved Reliability Product Summary Part Number bvdss "dS(ON|
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OCR Scan
VN64GA IRF1501 1RF720 I304

IRF162

Abstract: IRF152 Standard Poweir MOSFETs - File Number 1824 Power MOS Field-Effect Transistors IRF150, IRF151 , IRF150, IRF151, IRF152 and IRF153 are n-channel enhancement-mode silicon-gate power field-effect , Temperature 300 (0.063 in. ( 1.6mm) from case for 10s) °c 3-69. Standard Poweir MOSFETs - IRF150 , Type Min. Typ. Max. Units Test Conditions BVqss Drain Source Breakdown Voltage IRF150 IRF152 100 - - , ) On-State Drain Current (2) IRF150 IRF151 40 - - A VDS > 'otonl * R0S(onl max.' VGS " ,0V IRF152 IRF153
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OCR Scan
IRF163 IRF161 1RF16 MOSFET "CURRENT source" impedance IRFI50 92CS-33741 92CS-37801 75BVDSS

IRF160

Abstract: 1RF151 Inductive L o a d s IRF150 IRF151 IRF152 T M O S P O W E R F ET s 33 and 40 A M P E R E S tD S (o n ) = , | Unit V(BR)DSS IRF150, IRF152 1RF151 ID S S TJ - 125°C) Ig s s f iq s s r Vdc 100 60 mAdc .0.2 1 100 100 nAdc nAdc - - VGS(th) rDS(on) IRF150,1RF151 IRF152 *D|onÎ IRF150, IRF151 IRF152 9FS IRF150, IRF151 IRF1S2 2 4 Vdc Ohm - - 40 33 9 9 0.055 0.080 Adc - - mhos - - C
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OCR Scan

circuits of IRF150

Abstract: MOSFET IRF150 PD - 90337F IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL , Part Number IRF150 BVDSS 100V RDS(on) 0.055 ID 38A The HEXFETtechnology is the key to , /22/01 IRF150 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified , Conditions Typical socket mount For footnotes refer to the last page 2 www.irf.com IRF150 , IRF150 13 a& b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical
International Rectifier
Original

MOSFET IRF150

Abstract: IRF150 MOSFET -43 ! H E 0 I 4â55H S2 0 OCH üb 7 ? I IRF150, IRF151, IRF152, IRF153 Devices , Junction and Storage Temperature Range Lead Temperature 150 1.2 IRF150 100 100 30 25 160 IRF151 60 60 30 25 , °C (Unless Otherwise Specified) Parameter SVd SS Drain - Source Breakdown Voltage Type IRF150 IRF152 1RF151 , IRF153 RoS(on) Static Drain-Source On-State . . . Resistance ® IRF150 IRF151 IRF152 IRF153 flfs C iss C 0 , socket mount 0.1 - - 30 G-44 4 3 5 5 4 5 2 OQOIDbfl 'I I " IRF150, IRF151, IRF152, IRF153
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OCR Scan
HA711 IRF15 IRF15S

IRF series

Abstract: for driver circuit for mosfet IRF240 . Table A DEVICE IRF034 IRF044 IRF054 IRF130 IRF140 IRF150 IRF230 IRF240 IRF250 IRF330 IRF340 IRF350 , IRF150 IRF250 IRF350 IRF450 100V 200V 400V 500V 100 V 200V 400V 500V 14.0 9.0 5.5 4.5 38.0 30.0 14.0 12.0 , 300 (0.63 in. (1.6 mm) from case for 10s) 11.5 (typical) 9 Part Number IRF140 28 20 112 125 1.0 IRF150 , . IRF034 IRF044 IRF054 IRF130 IRF140 IRF150 IRF230 IRF240 IRF250 IRF330 IRF340 IRF350 IRF360 N-Channel , Temperature Coefficient of Breakdown Voltage Part Number Min. IRF034 IRF044 IRF054 IRF130 IRF140 IRF150 IRF230
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OCR Scan
IRF series for driver circuit for mosfet IRF240 IRF350 MOSFET driver aK 9AA diode IRF 870 irf460

irf440

Abstract: c IRFAC40 s IRF130 d IRFAE30 t IRF140 e IRFAE40 u IRF150 f , JANTXV2N6768 JANTXV2N6770 IRF130 IRF230 IRF330 IRF430 IRF150 IRF250 IRF350 IRF450 100V 200V , IRF150 38 Id @ VGS = 0V, Tc = 100°C Continuous Drain Current 20 24 lDM Pulsed Drain , â'" â'" IRF140 100 â'" â'" IRF150 100 â'" â'" IRF230 200 â , â'" 0.13 IRF150 â'" 0.13 â'" IRF230 â'" 0.29 â'" IRF240 â'" 0.29
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OCR Scan
irf440 554S2 IRFAG40 IRF9130 IRF9140 IRF9230 IRF9240

IRF150 MOSFET AMP circuit

Abstract: forsythe arbitrary number of paralleled IRF150 HEXFET Power MOSFETs. I. INTRODUCTION Concepts and design , the IRF150 used in this paper. A more generalized set of equations would be 2 useful. However, with , where the IRF150 resistance decreases more rapidly with increasing gate voltage than the equations , 0 1 2 3 4 5 6 7 8 VGS GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2(b) : IRF150 Data Sheet , pf CGD: 350 pf Table l: IRF150 Data 2 Consider the unbalance that occurs in branch #1 if its
International Rectifier
Original
IRF150 MOSFET AMP circuit forsythe 1. A 48V, 200A Chopper For Motor S. Clemente A2JA Chopper For Motor S. Clemente ant B. Pelly AN942
Showing first 20 results.