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Part Manufacturer Description Datasheet BUY
IRF1404PBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 visit Digikey Buy
IRF1404STRRPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
IRF1404SPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
IRF1404ZSPBF Infineon Technologies AG Power Field-Effect Transistor, 180A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
IRF1404STRLPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
IRF1404ZSTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy

IRF1404 equivalent

Catalog Datasheet MFG & Type PDF Document Tags

IRF1405 equivalent

Abstract: IRF1404 ) , illustrating high ruggedness and low RDS(on) for equivalent die sizes. Normailzed New/Old, 25C 0.9 , demonstrates this [2] showing actual destruct avalanche current for a 4m, 40V, IRF1404 device plotted versus , maintaining lowest RDS(on) . 2 RTotal = Rsolenoid + R DS ( on ) IRF1404 Ias-destruct vs. Tstart , 2 Starting Temperature (C) Figure 4. Ias-destruct versus Tstart for IRF1404. [2] and , junction temperature is given by As an example, we use an IRF1404 to drive an inductive load such as a
International Rectifier
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AN-1005 IRF1405 equivalent IRF1405 irf1010n application schematic irf14042 Advanced Power Technology Avalanche Energy IRF1404 equivalent ED-13

irf14042

Abstract: IRF1404 is an IRF1404. To control the slew rate, capacitors are added to the gates of the Power FETs. In , Q1 IRF1404 2 3 VCC VDDH V+ 1 3 Q2 IRF1404 CON4 R14 100K J2 CON5 2 , - 10 4 11 3 13 1 12 2 3 C1 S2 SW DIP-4 Q3 IRF1404 R16 100K U2 VDDH 3 , power-on. This is equivalent to a 330mA load being applied to the 5V output as the FET turns on. Though
Intersil
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AN165 2N7002 74hc7414 74HC74 schematic application 74HC74 IN4148 X80200

irf14042

Abstract: IRF1404 FET IRF1404. To control the slew rate, capacitors are added to the gates of the Power FETs. In operation , 5 3 REV 1.1 7/1/03 C4 C12 1 2 C6 U4 X80200V20I R12 10K 1 Q3 IRF1404 47nF 3 C5 Q2 IRF1404 2 R13 10K 47nF 4.7nF 47nF 2.2nF C11 1 Q1 IRF1404 2 3 , 5V output prior to power-on. This is equivalent to a 330mA load being applied to the 5V output as
Xicor
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IRF1404 FET LM2901M LM2903M AN165 xicor

IRFP460Z

Abstract: IRF3205 application Equivalent device hours @ 90C & 80% of rated voltage 5.5E+07 1.1E+07 6.6E+07 1000 1000 1000 1000 , IRFI9630G 205 150 160 80 1000 0 Equivalent device hours @ 90C & 80% of rated , MOSFETs (continued) Failure Rate in FITs at 60% UCL 0 0 0 0 Equivalent device hours @ 90C & , IRF9620 145 150 160 TO-220, N-channel, Low Voltage IRF3711 IRL3803 IRF1404 IRF1404 IRF1404 IRF1404 IRF1404 IRF2804 IRF2804 IRL1404 IRL1404 IRL1404 IRL1404 IRL1404 IRL1404 IRL1404
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IRFP460Z IRF3205 application IRF3205 equivalent irfp4004 power MOSFET IRFP460z IRF3808 equivalent HFA16TB120 C/15PSIG 20ETS12S 15ETS16 20ETS16 10TTS08

AN941

Abstract: IRF1404 FET the internal static avalanche model from operation. An external equivalent circuit of the device , . The equivalent circuit for the quasi-thermal avalanche characteristic is comprised of one diode and , IRF1404 III: Simulation and Results: Half-bridge is a typical topology in motor drive and converter , 200nH inductance. From one lot measurement of IRF1404, at o 25 C , BV average=42.24V. With 6 sigma
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AN941 parallel connection of MOSFETs Measurement of stray inductance FET model parallel MOSFET Transistors Analysis of Avalanche Behaviour for Paralleled MOSFETs

SK 10 BAT 065

Abstract: Gate Driver of IRF1404 wheeling diode during PWM operation. As the equivalent circuit between Vbat and ­ Mot is 2 diode in series , 50k 50k + Cd1 Cd2 Iic _on Vcc Cboot Boot CBoot Output D1 10k MBR 3045CT - Mot T1 IRF1404 D3
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SK 10 BAT 065 Gate Driver of IRF1404 dpak mosfet motor control DC 12v AUIR3330S AUIR3330
Abstract: PWM operation. As the equivalent circuit betw een Vbat and â'" Mot is 2 diode in series (the body , Current shutdown programming resistor Vbat + Mot D1 10k MBR 3045CT - Mot GND T1 IRF1404 International Rectifier
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SK 10 BAT 065

Abstract: d2pak-7 equivalent circuit betw een Vbat and ­ Mot is 2 diode in series (the body diode of the AUIR3330S and D1), the , Mot Ifb Ifbk Gnd D1 10k MBR 3045CT T1 IRF1404 D3 12V - Mot GND Gnd Gnd Current
International Rectifier
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d2pak-7 D2PACK footprint IR3330 schematic diagram for water pump D-PAK package