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Part Manufacturer Description Datasheet BUY
IRF1010ZPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 visit Digikey
IRF1010ZSTRRPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey
IRF1010NSTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey
IRF1010EZSPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey
IRF1010NPBF Infineon Technologies AG Power Field-Effect Transistor, 85A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 visit Digikey
IRF1010ZSTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey

IRF1010 E DATASHEET Datasheet

Part Manufacturer Description PDF Type
IRF1010E International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF1010E with Standard Packaging Original
IRF1010E International Rectifier HEXFET Power MOSFET Original
IRF1010E International Rectifier HEXFET Power MOSFET Original
IRF1010E Toshiba Power MOSFETs Cross Reference Guide Original
IRF1010E International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 81A, Pkg Style TO-220AB Scan
IRF1010EL International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010EL with Standard Packaging Original
IRF1010EL International Rectifier HEXFET Power MOSFET Original
IRF1010EL International Rectifier HEXFET Power MOSFET Original
IRF1010EL Toshiba Power MOSFETs Cross Reference Guide Original
IRF1010ELPBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1010EL with Lead Free Packaging Original
IRF1010ELPBF International Rectifier TRANS MOSFET N-CH 60V 84A 3TO-262 Original
IRF1010EPBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF1010E with Lead-Free Packaging. Original
IRF1010EPBF International Rectifier TRANS MOSFET N-CH 60V 84A 3TO-220AB Original
IRF1010ES International Rectifier HEXFET Power Mosfet Original
IRF1010ES International Rectifier HEXFET Power Mosfet Original
IRF1010ES International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF1010ES with Standard Packaging Original
IRF1010ES Toshiba Power MOSFETs Cross Reference Guide Original
IRF1010ESL International Rectifier HEXFET Power Mosfet Original
IRF1010ESPBF International Rectifier TRANS MOSFET N-CH 60V 84A 3D2-PAK Original
IRF1010ESPBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF1010ES with Lead Free Packaging Original
Showing first 20 results.

IRF1010 E DATASHEET

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Previous Datasheet Index Next Data Sheet PD 9.1280A IRF4905 PRELIMINARY HEXFET , Junction-to-Ambient To Order Max. Units ­­­ 0.50 ­­­ 1.0 ­­­ 62 °C/W Previous Datasheet , cycle 2%. RG = 25, IAS = -38A. (See Figure 12) To Order Previous Datasheet Index Next , Order A 8 0 100 120 140 160 180 Previous Datasheet Index Next Data Sheet IRF4905 , Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage To Order Previous Datasheet International Rectifier
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IRF1010 IRF4905 P-channel power irf1010 applications IRF1010 E
Abstract: Previous Datasheet Index Next Data Sheet PD 9.1434 IRF5210 PRELIMINARY HEXFET , Junction-to-Ambient To Order Max. Units ­­­ 0.50 ­­­ 1.0 ­­­ 62 °C/W Previous Datasheet , )DSS, TJ 175°C Pulse width 300us; duty cycle 2%. To Order Previous Datasheet Index , A 8 0 100 120 140 160 180 Previous Datasheet Index Next Data Sheet IRF5210 5000 , Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage To Order Previous Datasheet International Rectifier
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Abstract: Previous Datasheet Index Next Data Sheet PD 9.1437 IRF9540N PRELIMINARY HEXFET , ­­­ 62 °C/W Previous Datasheet Index Next Data Sheet IRF9540N Electrical , Previous Datasheet Index Next Data Sheet IRF9540N 100 100 VGS - 15V - 10V - 8.0V - 7.0V , Characteristics To Order A 8 0 100 120 140 160 180 Previous Datasheet Index Next Data Sheet , Datasheet Index Next Data Sheet IRF9540N VGS D.U.T. RG - 16 + -I D, Drain International Rectifier
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BU 11A
Abstract: Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET ® Power MOSFET , ­­­­ ­­­­ 0.50 ­­­­ 1.7 ­­­­ 62 °C/W Revision 0 Previous Datasheet Index Next , width 300us; duty cycle 2%. To Order S+LD) Previous Datasheet Index Next Data Sheet , Previous Datasheet Index Next Data Sheet IRL630 10 V GS = 0V, f = 1MHz Ciss = Cgs + C gd , Datasheet Index Next Data Sheet IRL630 RD VDS VGS 10 D.U.T. RG ID, Drain Current International Rectifier
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Abstract: Previous Datasheet Index Next Data Sheet PD - 9.1341 IRF540N PRELIMINARY HEXFET , °C/W Previous Datasheet Index Next Data Sheet IRF540N Electrical Characteristics @ TJ = , , IAS = 16A. (See Figure 12) Pulse width 300us; duty cycle 2%. To Order Previous Datasheet , 180 Previous Datasheet Index Next Data Sheet IRF540N 2400 VGS , Gate-to-Source , Voltage To Order Previous Datasheet Index Next Data Sheet IRF540N RD VDS 30 VGS International Rectifier
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Abstract: Previous Datasheet Index Next Data Sheet PD - 9.1277 IRFZ46N PRELIMINARY HEXFET , 0.50 ­­­­ 1.7 ­­­­ 62 °C/W Previous Datasheet Index Next Data Sheet IRFZ46N , Figure 12) To Order D G S Previous Datasheet Index Next Data Sheet IRFZ46N 1000 , Transfer Characteristics To Order A 8 0 100 120 140 160 180 Previous Datasheet Index , Datasheet Index Next Data Sheet IRFZ46N RD VDS 50 VGS D.U.T. RG + ID, Drain International Rectifier
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MOSFET IRFZ46N
Abstract: Previous Datasheet Index Next Data Sheet PD 9.1373 IRFI1010N PRELIMINARY HEXFET , Junction-to-Case Junction-to-Ambient 3.2 65 °C/W Previous Datasheet Index Next Data Sheet , )DSS, TJ 175°C To Order D S Previous Datasheet Index Next Data Sheet IRFI1010N , 120 140 160 180 Fig 4. Normalized On-Resistance Vs. Temperature Previous Datasheet Index , Datasheet Index Next Data Sheet IRFI1010N RD VDS 50 VGS D.U.T. RG + -VDD ID International Rectifier
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IRFI840G IRF1010N
Abstract: Previous Datasheet Index Next Data Sheet PD 9.1403 IRFIZ44N PRELIMINARY HEXFET , Junction-to-Case Junction-to-Ambient 4.0 65 °C/W Previous Datasheet Index Next Data Sheet , , TJ 175°C To Order D S Previous Datasheet Index Next Data Sheet IRFIZ44N 1000 , Transfer Characteristics To Order A 8 0 100 120 140 160 180 Previous Datasheet Index , Previous Datasheet Index Next Data Sheet IRFIZ44N RD VDS 30 VGS ID, Drain Current (Amps International Rectifier
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IRFIZ44N equivalent IRFZ44N IRFz44n equivalent
Abstract: Previous Datasheet Index Next Data Sheet PD 9.1407 IRFIZ48N PRELIMINARY HEXFET , Junction-to-Case Junction-to-Ambient 3.6 65 °C/W Previous Datasheet Index Next Data Sheet , , TJ 175°C To Order D S Previous Datasheet Index Next Data Sheet IRFIZ48N 1000 , Transfer Characteristics To Order A 8 0 100 120 140 160 180 Previous Datasheet Index , Diode Forward Voltage Fig 8. Maximum Safe Operating Area To Order 100 Previous Datasheet International Rectifier
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IRFZ48N IRFZ48N equivalent
Abstract: HIS IS AN IRF1010 LOT CODE 1789 AS S E MBLE D ON WW 19, 2000 IN T HE AS S E MBLY LINE "C" Note , °C G E VCE(on) typ. = 1.7V @ 6A E E n-channel D-Pak IRGR4610DPbF D2-Pak IRGS4610DPbF G G G C E C ollector Em itter â' Features Low VCE(ON) and switching , parameters 5μs short circuit SOA Lead-free, RoHS compliant Base part number E TO , © 2013 International Rectifier c Submit Datasheet Feedback Units V A V W -40 to + 175 International Rectifier
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IRGR4610DP IRGS4610DP IRGB4610DP IRGR4610DTRP IRGR4610DTRRP IRGR4610DTRLP
Abstract: VCES = 600V C C IC = 15A, TC = 100°C E G tsc > 5Âus, Tjmax = 175°C G E VCE , IRGS4615DTRLPbF IRGB4615DPbF E â' Features Low VCE(ON) and switching losses Base part number C Gate Applications â'¢ Appliance Drives â'¢ Inverters â'¢ UPS E Excellent current sharing in , Datasheet Feedback Units V 24 32 14 9 32 ± 20 ± 30 99 50 A V W -40 to + 175 °C 300 10lbf. In (1.1 N.m) October 25, 2013 IRGS/B4615DPbF Thermal Resistance e International Rectifier
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IRGS4615DP IRGB4615DP IRGS4615DTRRP IRGS4615DTRLP EIA-418 JESD47F