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Part Manufacturer Description Datasheet BUY
HIP4083AB Intersil Corporation 3 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PDSO16 visit Intersil
TPIC2601KTD Texas Instruments 2A, 60V, 0.3ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET visit Texas Instruments
TPIC2701MJ Texas Instruments 0.5A, 60V, 0.8ohm, 7 CHANNEL, N-CHANNEL, Si, POWER, MOSFET visit Texas Instruments
EL7202CSZ-T7 Intersil Corporation High Speed, Dual Channel Power MOSFET Drivers; PDIP8, SOIC8; Temp Range: -40° to 85°C visit Intersil Buy
EL7222CS Intersil Corporation 2A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, SO-8 visit Intersil
HS9-4424BRH-8 Intersil Corporation 2A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDFP16, CERAMIC, DFP-16 visit Intersil

IRF P CHANNEL MOSFET

Catalog Datasheet MFG & Type PDF Document Tags

IRF 850 mosfet

Abstract: MOSFET IRF 635 POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 1.3 IRF 711 IRF 2 613 IRF 611 IRF 612 IRF 610 IRF 614 IRF 723 IRF 3 625 IRF 3, IRF 623 ' 4.5 5 -i" " IRF 621 IRF 620 IRF 733 IRF 5.5 IRF 6 IRF 635 IRF , 850 900 1.5 IRF 823 IRF 821 IRF 720 IRF 822 IRF 620 SSP 3N70 SSP 3N8C SS P 2N85 SSP , MOSFET TO-3P F/P X" '- V do Id 4 4.5 5 5.5 7 8 9 10 12 13 14 15 16 18 24 25 27 30 33 40 BO FUNCTION , IRFR9121 IRFR9022 IRFR9020 IRFR9120 P CHANNEL TO-3P \ y DS ·o -5 .5 -6 .5 -9 -1 0 -1 1 -1 2 -1 5 -1 9
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OCR Scan
IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF8613 IRF9611 IRF9612 IRF9610 IRF9531 IRF9543

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode Transceiver USB1T11A S-Correction IRF/IRFS630B 9A/200V N-Channel Power MOSFET IRF/IRFS6408 18A , N-Channel 9A/200V Power MOSFET FAN7000 300mW Audio Amplifier (stereo) IRF/IRFS634B N-Channel , Integrated Power Switches FQA/P/B6N90 FOD2712 KA1M0680B ML4812 FQA11N90 FYAF3004DN , Memory Power Controller (VDDQ, VTT and VREF) FDB6035AL N-Channel Logic-Level PowerTrench MOSFET FDB6035AL N-Channel Logic-Level PowerTrench MOSFET FDC6331L Integrated Load Switch FDD6690A
Fairchild Semiconductor
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500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v S-17148 247TM

irf MOSFET p-CH

Abstract: marking 27A sot-23 PD-95341 IRF5851PbF HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free N-Ch G1 , ) 0.090 0.135 Description These N and P channel MOSFETs from International Rectifier utilize advanced , RESPONSE) 1 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA , = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1
International Rectifier
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IRF5851 IRF5800 IRF5852 irf MOSFET p-CH marking 27A sot-23 IRF P CHANNEL MOSFET marking 25b sot23 IRF n CHANNEL MOSFET IRF5851P I3443DV IRF5801

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF P P CHANNEL · BVDSS up to 1000V · All IRF types are avalanche capable · Size 1 , 100V 80V 60V 0.200 30V 0.100 rDS(ON) BVDSS R and IRF Series Power MOSFET TO , N P P N N N CHANNEL N N CHANNEL N N N N N N CHANNEL , CHANNEL N N N N N N N N P N N N P P N N N N P P N N P P N N CHANNEL HARRIS DISCRETE POWER PRODUCT LINE TO-251AA/252AA
Harris Semiconductor
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IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM RF1S60P03SM

P Channel Power MOSFET IRF

Abstract: IRF P CHANNEL MOSFET RF1K49088 RF1K49154 PACKAGE SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 CHANNEL N NP NN P PP N NN NN , Electrostatic discharge protected gates available · Avalanche energy capability available · Both N and P channel , IRFx M O SFETs N and P C h an n el Features · Size 1 through 5 die · All IRF types are avalanche , RF1K49221 RF1K49223 RF1K49224 PACKAGE SO-8 SO-8 SO-8 SO-8 SO-8 CHANNEL N NN N PP NP 30V , Logic level A p p lic a tio n s · Fault tolerant m otor drives · Stall protection · Current inrush lim
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mosfet n channel irf IRF n 30v IRF P CHANNEL MOSFET D-PAK RF1K49157 RF1K49086 RF1K49211 RF1K49092 RF1K49090 RF1K49093

IRF P CHANNEL MOSFET

Abstract: SD1575 MOS-FET 30V 0,02£2 I 35A 30W > Characteristics 2SK2806-01 FAP-IIIB Series Pow er Dissipation P IM , Driving Power Avalanche Rated 2SK2806-01 FAP-IIIB Series N-channel MOS-FET 30V 0,02& 35A 30W , Temperature Range Symbol V D S I I V E D D (p u ls) G S A V Rating 30 35 140 ±16 129,3 30 150 -5 5 - + 1 5 0 * L=0,07mH, Vcc=12V > Equivalent Circuit Unit V A A V mJ* W °C °C P D T c h T sta - , Resistance Symbol R th(ch-a) R th (ch -c) Test conditions channel to air channel to case Min. Typ
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SD1575

800w class d circuit diagram schematics

Abstract: schematic diagram inverter 12v to 24v 1000w . . . . . . . . .p 41-43 MOSFET - Automotive Trench . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p 44-45 MOSFET - DirectFET . . . . . . . . . , . .p 46-47 MOSFET - FetKY MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p 48 MOSFET - Low Voltage MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p 49 MOSFET
International Rectifier
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800w class d circuit diagram schematics schematic diagram inverter 12v to 24v 1000w schematic diagram inverter 2000w SCHEMATIC WITH IR2153 1000w class d circuit diagram schematics 200w dc to ac inverter Circuit diagram

9n90c

Abstract: 9n50c Device ( M/P, MP-3, DSC, LCD TV ) Load Switch Schematic · The RDS(ON) of the P Channel MOS-FET is , /P M/P `07. 08 99 High Voltage MOS-FET First & Best First & Best 600V ~ 700V Line-up , - M/P 600 650 700 KEC-H Corp. 10 10 High Voltage MOS-FET First & Best First & , Signal BVDSS KMA2D8P20X P-CH MOS-FET Type Dual P -20V 5.8A FLP-8 M/P TSOP , Power MOS-FET Selection Guide MOS-FET 2007. First Version 2007. First Version Http
KEC
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9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c 2N7002 2N7002A 2N7002K KTX421U KTX321U 2N7000

IRF 426

Abstract: A2426 2SK2213-01L, S N-CHANNEL SILICON POWER MOS-FET FUJI POWER MOS-FET FAP-IIA SERIES IOutline , L- t y p e E I A J r S -t y p e A Applications · Switching regulators · UPS · DC-DC , (c h -a ) Test Conditions channel to air channel to case Min. Typ. Max. 125 1.56 Units "C/W "C/W Rtli(C h-C) A2-425 FUJI POWER MOS-FET Characteristics 20 1 1 r i i ! BOflB , ] / 60 \ \ N V \ \ P0 (W) 40 V \ \ 20 P d = F (T c ) / =/ -f / / 10" 0. 5 \ \ V
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OCR Scan
IRF 426 A2426 55--I-150

MOSFET IRF 941

Abstract: IRF P CHANNEL MOSFET PD- 95589 IRL3102SPbF HEXFET® Power MOSFET D VDSS = 20V RDS(on) = 0.013 G , 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS www.irf.com 7 , Information THIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMBL E D ON WW 02, 2000 IN THE AS S E MBL Y L INE "L" INT E RNAT IONAL RECT IF IER L OGO Note: "P" in as s embly line pos ition indicates "L , CODE P = DE S IGNAT E S LE AD-F RE E PRODUCT (OPT IONAL) YE AR 0 = 2000 WE E K 02 A = AS S E MB L
International Rectifier
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MOSFET IRF 941 P-channel power mosfet irf K02A diode 8024 ir 601 h HEXFET D2PAK IRL3102SP F530S EIA-418

P Channel Power MOSFET IRF

Abstract: IRF P CHANNEL MOSFET PD- 95589 IRL3102SPbF HEXFET® Power MOSFET D VDSS = 20V RDS(on) = 0.013 G , 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS www.irf.com 7 , Information THIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMBL E D ON WW 02, 2000 IN THE AS S E MBL Y L INE "L" INT E RNAT IONAL RECT IF IER L OGO Note: "P" in as s embly line pos ition indicates "L , CODE P = DE S IGNAT E S LE AD-F RE E PRODUCT (OPT IONAL) YE AR 0 = 2000 WE E K 02 A = AS S E MB L
International Rectifier
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mosfet p channel irf mosfet irf p-channel IRF P-Channel mosfet

IRF820

Abstract: P Channel Power MOSFET IRF MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA P o w er Field E ffe c t T ran sisto r N -Channel , OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS MAXIMUM RATINGS IRF Rating D rain-Source Voltage , Junctio n to A m bient M a xim u m Lead Tem p, fo r Soldering Purposes, 1'8" fro m Case fo r 5 Seconds °C/W RtfJC PtfJA 3.12 62.5 300 °C See th e M T P 3N 45 D e s ig n e r's Data S heet fo r a c o m p le te set o f d e s ig n cu rv e s fo r th e p ro d u c t o n th is data sheet. MOTOROLA TMOS
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OCR Scan
IRF820 IRF821 IRF 511 MOSfet R 823 motorola IRF823

IRF P CHANNEL MOSFET

Abstract: P Channel Power MOSFET IRF 2SK1083-MR N-CHANNEL SILICON POWER MOS-FET FUJI POWER MOS-FET F - I I I S E R I E S , Transconductance A p p lic a tio n s · M otor controllers · G îneral purpose power amplifier · D '-D C , Circuit Schematic Units V Symbols V d ss Id I d (p u ) s ) I dr Ratings 60 8 32 8 ± 2 0 , V (ER)DSS V g S( i D) I d ss V gs = lo ss R p S ìo n ) g fs C i ss C oss C rss Test Conditions , Characteristics Items "'herm al Resistance Symbols R lli(ch-a) R lh(ch-c) Test Conditions channel to air
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53B8-7680

MOSFET IRF 630

Abstract: MOSFET n .$$R+j$&M OUTLINE DIMENSIONS Case 1 E-pack I i 2 09 ir-f I0 3 2.3 3 7' -A,-"' - , vx-b'J=X ll7-MOSFET vx-n SERIES POWER MOSFET n 9+jf$+jkH O U T L I N E D I M E N S I O N S , 11 2 3-, P12, 7-l Q f `g ( 7': $ 1 1 Lead type is available. See P. 12, 7-l ¤@jt;f&$~~@ A b s o l , IT Bi! Ratings b& f&i fX ip,hl: J? Storage Temperature f 1' q JL,i,:J$ Channel , 1 /- Gate. Source Voltage. -i-II)P l'eak ' i -_ / - l~;~~~,~i i [l'l:,;ii IS
Shindengen Electric
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2SJ366

irf440

Abstract: l Of l O 44S â  M5 V g s - -10V V p s = 0.5 x Max. Rating I«R IRF Series Devices , IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t is a rra n g e d to s h o w c o m m o n ta b u la r a n d g ra p h ic a l in fo rm a tio n b e tw e e n d e v ic e s . A b s o lu te
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OCR Scan
irf440 554S2 IRFAG40 IRF9130 IRF9140 IRF9230 IRF9240
Abstract: high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or , channel designed for bootstrap operation â'¢ Fully operational to +600 V â'¢ Tolerant to negative , voltage, high speed power MOSFET and IGBT driver with independent high- and low-side referenced output , Supply Current (µA) VBS Supply Current (µA) 100 80 M ax. 60 40 Ty p. 20 250 200 , Current s. Temperature Figure Supply Current s. Voltage 300 V DD S u p p ly C u rre n t (µA International Rectifier
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PD60251 IRS2112 IRS2112-2 IRS2112-1 IRS2112S IRS2112P

tl494 dc to ac inverter

Abstract: TL494 Supply voltage In power MOSFET drive applications the P qc term is negligible. MOSFET power transistors , through the series connected N and P channel output MOSFETS as one device is turning "ON" while the other , High-Speed Power MOSFET Drivers FEATURES · · · · · Latch Up Protected > 1.5A Logic Input Swing Negative , ns. The unique current and voltage drive qualities make the AS426/AS427/AS428 ideal power MOSFET , sec).+300°C ELECTRICAL CHARACTERISTICS P aram eter In p u t Logic 1
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OCR Scan
1N400I tl494 dc to ac inverter TL494 EST. TL494 tl494 dc to ac DS0026 power mosfet driver TC426/427/428 AS426 DS0026 MMH0026 AS427 AS428
Abstract: PD - 95218 IRF7507PbF HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile ( , . Gate-to-Source Voltage www.irf.com IRF7507PbF P - Channel 100 100 VGS - 7.5V - 5.0V - 4.0V - , Current 5 IRF7507PbF P - Channel 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 0.250 -ID International Rectifier
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IRF7507P EIA-481 EIA-541

IRF-520 Mosfet

Abstract: VN2224 to-220 knowing when a channel is produced, which is of little interest to MOSFET users. Comparing VGS(th) at , channel of electrons is needed between the gate and the source. This potential produces an inversion layer called the channel. The depth of this layer is the limiting factor in allowing current flow between the drain and source terminal. The greater the voltage applied, the deeper the induced channel; resulting in more current flow. The voltage needed to invert the channel region is called the threshold
Supertex
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IRF-520 Mosfet VN2224 to-220 definition of photovoltaic effect IRF P CHANNEL MOSFET TO-220 TN2124K1

P-Channel MOSFET 800v

Abstract: 800v irf PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive , 25°C, IS = 4.1A, VGS = 0V TJ = 25°C, IF = 4.1A di/dt = 100A/µs à MOSFET symbol A ­­­ ­­­ , Ripple 5% ISD * VGS = 5.0V for Logic Level and 3V Drive Devices Fig-14 For N -Channel HEXFETS , ) D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMB LED ON WW 02, 2000 IN T HE AS S EMB LY LINE "L" INT E RNAT IONAL RE CT IF IER LOGO Note: "P" in as s embly line
International Rectifier
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IRFBE30S IRFBE30L 800v irf IRF P CHANNEL MOSFET 100v IRL3103L ED marking code diode IRFBE30SP IRFBE30LP IRFBE30S/LP
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