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Part Manufacturer Description Datasheet BUY
HIP4083AB Intersil Corporation 3 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PDSO16 visit Intersil
TPIC2601KTD Texas Instruments 2A, 60V, 0.3ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET visit Texas Instruments
TPIC2701MJ Texas Instruments 0.5A, 60V, 0.8ohm, 7 CHANNEL, N-CHANNEL, Si, POWER, MOSFET visit Texas Instruments
CSD19534KCS Texas Instruments CSD19534KCS 100 V N-Channel NexFET™ Power MOSFET 3-TO-220 visit Texas Instruments Buy
CSD18535KCS Texas Instruments CSD18535KCS 60 V N-Channel NexFET™ Power MOSFET 3-TO-220 visit Texas Instruments Buy
CSD18536KCS Texas Instruments CSD18536KCS 60 V N-Channel NexFET™ Power MOSFET 3-TO-220 visit Texas Instruments Buy

IRF P CHANNEL MOSFET TO-220

Catalog Datasheet MFG & Type PDF Document Tags

IRF 850 mosfet

Abstract: MOSFET IRF 635 POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 1.3 IRF 711 IRF 2 613 IRF 611 IRF 612 IRF 610 IRF , 850 900 1.5 IRF 823 IRF 821 IRF 720 IRF 822 IRF 620 SSP 3N70 SSP 3N8C SS P 2N85 SSP , MOSFET TO-3P F/P X" '- V do Id 4 4.5 5 5.5 7 8 9 10 12 13 14 15 16 18 24 25 27 30 33 40 BO FUNCTION , MOSFETs PCHANNEL TO-220 ^ \V Id ds FUNCTION GUIDE N CHANNEL D-PAK -6 0 -1 0 0 -1 5 0 , IRFR9121 IRFR9022 IRFR9020 IRFR9120 P CHANNEL TO-3P \ y DS ·o -5 .5 -6 .5 -9 -1 0 -1 1 -1 2 -1 5 -1 9
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OCR Scan
IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF8613 IRF9611 IRF9612 IRF9610 IRF9531 IRF9543

800w class d circuit diagram schematics

Abstract: schematic diagram inverter 12v to 24v 1000w . . . . . . . . .p 41-43 MOSFET - Automotive Trench . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p 44-45 MOSFET - DirectFET . . . . . . . . . , . .p 46-47 MOSFET - FetKY MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p 48 MOSFET - Low Voltage MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p 49 MOSFET
International Rectifier
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800w class d circuit diagram schematics schematic diagram inverter 12v to 24v 1000w schematic diagram inverter 2000w SCHEMATIC WITH IR2153 1000w class d circuit diagram schematics 200w dc to ac inverter Circuit diagram

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode Transceiver USB1T11A S-Correction IRF/IRFS630B 9A/200V N-Channel Power MOSFET IRF/IRFS6408 18A , N-Channel 9A/200V Power MOSFET FAN7000 300mW Audio Amplifier (stereo) IRF/IRFS634B N-Channel , Integrated Power Switches FQA/P/B6N90 FOD2712 KA1M0680B ML4812 FQA11N90 FYAF3004DN , Memory Power Controller (VDDQ, VTT and VREF) FDB6035AL N-Channel Logic-Level PowerTrench MOSFET FDB6035AL N-Channel Logic-Level PowerTrench MOSFET FDC6331L Integrated Load Switch FDD6690A
Fairchild Semiconductor
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500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v S-17148 247TM

irf MOSFET p-CH

Abstract: marking 27A sot-23 PD-95341 IRF5851PbF HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free N-Ch G1 , ) 0.090 0.135 Description These N and P channel MOSFETs from International Rectifier utilize advanced , RESPONSE) 1 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA , = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1
International Rectifier
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IRF5851 IRF5800 IRF5852 irf MOSFET p-CH marking 27A sot-23 IRF P CHANNEL MOSFET marking 25b sot23 IRF n CHANNEL MOSFET IRF5851P I3443DV IRF5801

NPN Transistor 600V SC-62

Abstract: 2SK2632 small-signal power MOSFET series. See the tables on other pages. AP* Sei-i es ( Advanced Performance ) The AP , precisely controlled, channel forming process is used to achieve a threshold value variation width of 0.5V , in VDSS 450V series.) Designed as a power MOSFET with well-balanced characteristics, the AP Series , No. V V I I P V (off) Rns(on) Ciss DSS OSS 1) DP D GS Vos=10V (V) (V) (A) (A) 'c=25t OV , 2 8 35 2-3 3.2/4.3 400 2SK2919 2SK1922 2 8 50 2-3 3.2/4.3 400 2SK1922 2SK1923 T0-220 4 16 60
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OCR Scan
NPN Transistor 600V SC-62 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 SC-64 SC-63 T0-251 SC-83 T0-18 T0-39

9n90c

Abstract: 9n50c Device ( M/P, MP-3, DSC, LCD TV ) Load Switch Schematic · The RDS(ON) of the P Channel MOS-FET is , /P M/P `07. 08 99 High Voltage MOS-FET First & Best First & Best 600V ~ 700V Line-up , - M/P 600 650 700 KEC-H Corp. 10 10 High Voltage MOS-FET First & Best First & , Signal BVDSS KMA2D8P20X P-CH MOS-FET Type Dual P -20V 5.8A FLP-8 M/P TSOP , Power MOS-FET Selection Guide MOS-FET 2007. First Version 2007. First Version Http
KEC
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9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c 2N7002 2N7002A 2N7002K KTX421U KTX321U 2N7000

schematic diagram inverter 12v to 24v 1000w

Abstract: 1000w class d circuit diagram schematics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p 41-43 MOSFET - , . . . . . . .p 44-45 MOSFET - DirectFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p 46-47 MOSFET - FetKY MOSFETs . . . . , . . . . .p 48 MOSFET - FlipFET MOSFETS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p 49 MOSFET - Low Voltage MOSFETs . . . . . .
International Rectifier
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IRF 9234 schematic diagram inverter 12v to 24v 30a 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM laptop LCD inverter SCHEMATIC 700w audio amplifier circuit diagram 12vdc to 230vac mosfet inverter

irf640

Abstract: IRF640 P CHANNEL MOSFET IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET , 3 2 1 TO-220 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IRF640 V DS V DGR V GS Un it IRF 640F P Drain-source Voltage (V , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , (pulsed) 72 72 A T otal Dissipation at T c = 25 oC 125 40 W Derating Factor P
STMicroelectronics
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IRF640 P CHANNEL MOSFET P Channel Power MOSFET IRF IRF P CHANNEL MOSFET TO-220 IRF640 morocco IRF640 circuit DI L6 IRF640/FP

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF P P CHANNEL · BVDSS up to 1000V · All IRF types are avalanche capable · Size 1 , 100V 80V 60V 0.200 30V 0.100 rDS(ON) BVDSS R and IRF Series Power MOSFET TO , N P P N N N CHANNEL N N CHANNEL N N N N N N CHANNEL , CHANNEL N N N N N N N N P N N N P P N N N N P P N N P P N N CHANNEL HARRIS DISCRETE POWER PRODUCT LINE TO-251AA/252AA
Harris Semiconductor
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IRF P CHANNEL MOSFET 200V 20A N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM RF1S60P03SM

irf440

Abstract: l Of l O 44S â  M5 V g s - -10V V p s = 0.5 x Max. Rating I«R IRF Series Devices , IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t is a rra n g e d to s h o w c o m m o n ta b u la r a n d g ra p h ic a l in fo rm a tio n b e tw e e n d e v ic e s . A b s o lu te
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OCR Scan
irf440 554S2 IRFAG40 IRF9130 IRF9140 IRF9230 IRF9240

IRF-520 Mosfet

Abstract: VN2224 to-220 knowing when a channel is produced, which is of little interest to MOSFET users. Comparing VGS(th) at , channel of electrons is needed between the gate and the source. This potential produces an inversion layer called the channel. The depth of this layer is the limiting factor in allowing current flow between the drain and source terminal. The greater the voltage applied, the deeper the induced channel; resulting in more current flow. The voltage needed to invert the channel region is called the threshold
Supertex
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IRF-520 Mosfet VN2224 to-220 definition of photovoltaic effect TN2124K1

P Channel Power MOSFET IRF

Abstract: IRF P CHANNEL MOSFET RF1K49088 RF1K49154 PACKAGE SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 CHANNEL N NP NN P PP N NN NN , Electrostatic discharge protected gates available · Avalanche energy capability available · Both N and P channel , IRFx M O SFETs N and P C h an n el Features · Size 1 through 5 die · All IRF types are avalanche , RF1K49221 RF1K49223 RF1K49224 PACKAGE SO-8 SO-8 SO-8 SO-8 SO-8 CHANNEL N NN N PP NP 30V , Logic level A p p lic a tio n s · Fault tolerant m otor drives · Stall protection · Current inrush lim
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OCR Scan
mosfet n channel irf IRF n 30v IRF P CHANNEL MOSFET D-PAK RF1K49157 RF1K49086 RF1K49211 RF1K49092 RF1K49090 RF1K49093

IRF-520 Mosfet

Abstract: cell phone charger 3.7 VDC shown in Figure 1. For conduction to occur, a channel of electrons is needed between the gate and the source. This potential produces an inversion layer called the channel. The depth of this layer is the , applied, the deeper the induced channel; resulting in more current flow. The voltage needed to invert the channel region is called the threshold voltage VGS(th). However, when examining most manufacturers , differs from the theoretical definition of knowing when a channel is produced, which is of little
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TN0524N3 cell phone charger 3.7 VDC cost of logic pulser TN0520N3 VN0220N3 logic pulser cost pioneer mosfet

ICM7555

Abstract: TN0520N3 channel is produced, which is of little interest to MOSFET users. Comparing VGS(th) at the same ID , similar cross-section characteristics, as shown in Figure 1. For conduction to occur, a channel of , channel. The depth of this layer is the limiting factor in allowing current flow between the drain and source terminal. The greater the voltage applied, the deeper the induced channel; resulting in more current flow. The voltage needed to invert the channel region is called the threshold voltage VGS(th).
Supertex
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ICM7555 TN0604N3 VN02 VN1210N5

charge pump relay drive circuit

Abstract: IRF P CHANNEL MOSFET conduction to occur, a channel of electrons is needed between the gate and the source. This potential produces an inversion layer called the channel. The depth of this layer is the limiting factor in allowing , induced channel; resulting in more current flow. The voltage needed to invert the channel region is , the theoretical definition of knowing when a channel is produced, which is of little interest to MOSFET users. Comparing VGS(th) at the same ID simplifies the analysis of databook parametric
Supertex
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charge pump relay drive circuit TN2524N8 VN2224 VN2224N3 VN2210N3 12VDC

IRF P CHANNEL MOSFET

Abstract: SD1575 MOS-FET 30V 0,02£2 I 35A 30W > Characteristics 2SK2806-01 FAP-IIIB Series Pow er Dissipation P IM , Driving Power Avalanche Rated 2SK2806-01 FAP-IIIB Series N-channel MOS-FET 30V 0,02& 35A 30W , Temperature Range Symbol V D S I I V E D D (p u ls) G S A V Rating 30 35 140 ±16 129,3 30 150 -5 5 - + 1 5 0 * L=0,07mH, Vcc=12V > Equivalent Circuit Unit V A A V mJ* W °C °C P D T c h T sta - , Resistance Symbol R th(ch-a) R th (ch -c) Test conditions channel to air channel to case Min. Typ
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OCR Scan
SD1575

IRF 426

Abstract: A2426 2SK2213-01L, S N-CHANNEL SILICON POWER MOS-FET FUJI POWER MOS-FET FAP-IIA SERIES IOutline , L- t y p e E I A J r S -t y p e A Applications · Switching regulators · UPS · DC-DC , (c h -a ) Test Conditions channel to air channel to case Min. Typ. Max. 125 1.56 Units "C/W "C/W Rtli(C h-C) A2-425 FUJI POWER MOS-FET Characteristics 20 1 1 r i i ! BOflB , ] / 60 \ \ N V \ \ P0 (W) 40 V \ \ 20 P d = F (T c ) / =/ -f / / 10" 0. 5 \ \ V
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OCR Scan
IRF 426 A2426 55--I-150

2S1265

Abstract: bj 950 131- 6 . VDSS 30V system (2SJ type:P channel (-) sign is omitted.) Absolute Maximum Ratings Electrical , of package of small-signal power MOSFET series. See the tables on other pages. ate Iâ'" D ser- i es , /max (il) typ/max (PF) 2sj466 ±20 35 140 50 1 2 30m/40m 20m/30m 4000 2sj466 2sk2432 Z P ±20 35 , 150m/200m 110m/150m 1230 2SJ261 2sj262 60 ±15 18 72 70 1 2 80m/110m 60m/80m 1900 2SJ262 2SJ348 TO-220 , -126LP ZP. SMP, SMP-FD, T0-220, TO-220CI, T0-220ML, T0-220FI (LS), T0-220MF, T0-3PB, T0-3PML, T0-3PBL, T0
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OCR Scan
2S1265 bj 950 131- 6 2SJ type 2SK2432 2SK3066 2SK1883 SC-43A T0-92 SC-51 SC-71 T0-126 S0T-32

MOSFET IRF 941

Abstract: IRF P CHANNEL MOSFET PD- 95589 IRL3102SPbF HEXFET® Power MOSFET D VDSS = 20V RDS(on) = 0.013 G , 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS www.irf.com 7 , Information THIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMBL E D ON WW 02, 2000 IN THE AS S E MBL Y L INE "L" INT E RNAT IONAL RECT IF IER L OGO Note: "P" in as s embly line pos ition indicates "L , CODE P = DE S IGNAT E S LE AD-F RE E PRODUCT (OPT IONAL) YE AR 0 = 2000 WE E K 02 A = AS S E MB L
International Rectifier
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MOSFET IRF 941 P-channel power mosfet irf K02A diode 8024 ir 601 h HEXFET D2PAK IRL3102SP F530S EIA-418

P Channel Power MOSFET IRF

Abstract: IRF P CHANNEL MOSFET PD- 95589 IRL3102SPbF HEXFET® Power MOSFET D VDSS = 20V RDS(on) = 0.013 G , 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS www.irf.com 7 , Information THIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMBL E D ON WW 02, 2000 IN THE AS S E MBL Y L INE "L" INT E RNAT IONAL RECT IF IER L OGO Note: "P" in as s embly line pos ition indicates "L , CODE P = DE S IGNAT E S LE AD-F RE E PRODUCT (OPT IONAL) YE AR 0 = 2000 WE E K 02 A = AS S E MB L
International Rectifier
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mosfet p channel irf mosfet irf p-channel IRF P-Channel mosfet
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