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LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments Buy
LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments

IRC540 equivalent

Catalog Datasheet MFG & Type PDF Document Tags

IRC540 equivalent

Abstract: IRC540 International S Rectifier PD-9.592A IRC540 HEXFET® Power MOSFET â'¢ Dynamic dv/dt Rating â , . These devices exhibit similar electrical and thermal characteristics as their IRF-series equivalent part , Junction-to-Ambient â'" â'" 62 9 IRC540 Electrical Characteristics @ Tj = 25°C (unless otherwise specified , =25a, Ias=28A (See Figure 12) 10 I«R IRC540 it? 10° 101 Vqs, Drain-to-Source Voltage (volts) Fig 1 , . Normalized On-Resistance Vs. Temperature 11 IRC540 Vds> Drain-to-Source Voltage (volts) Fig 5. Typical
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IRC540 equivalent IRC540 SIMILAR IRC540 package drawing

IRC540 equivalent

Abstract: IRC540 package drawing International S Rectifier PD-9.592A IRC540 HEXFET® Power MOSFET â'¢ Dynamic dv/dt Rating â , similar electrical and thermal characteristics as their IRF-series equivalent part numbers. The provision , °C/W RejA Junction-to-Ambient â'" â'" 62 9 IRC540_ Electrical Characteristics @ Tj = 25°C (unless , Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Tc=25°C IRC540 SOus PULSE WIDTH Tc - 175 , Area 12 IRC540 125 150 175 Tg, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case
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ScansUX1008 0-077Q

IRC540 package drawing

Abstract: devices exhibit similar electrical and thermal characteristics as their IR F-series equivalent part ,   4655452 â¡ D 1 4 5 2 C 1 5 b â  INR J IOH IRC540 Electrical Characteristics @ j = 25 ,   MA55452 DD1453D RTfl â  INR DATA SHEETS l l i ! _ IRC540 V q5 , â  INR I«R IRC540_ £ C D D) C O £ 0) o 0 C O 1 o 4 o , 740 M.INR m _ IRC540 o â'" 25 â'" â'" 50 â
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4AS54S2 IHCJ540 MA55M52 DD1M535

IRF3205 equivalent

Abstract: IRF 9732 up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test Hrs. @ 90°C & Failure Rate Temp , : Vs = Vd = 0V; Vg as specified Equivalent Dev. - Failure Rate @ Hrs. @ 90°C & Vg 90°C & Vg = Test , explanation of equivalent device hours for HTRB tests. c. One FIT represents one failure in one billion (1.0E+09) hours. d. EQUIVALENT DEV-HRS for the long term gate stress test are determined by Crook's Model , : Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent
International Rectifier
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IRF3205 equivalent IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent irf 9450 IRF9630 IRF9510L IRF9520 IRF9510 IRF9Z14 IRF9Z34

IRC540 equivalent

Abstract: IRF9540 equivalent I n t e r n a t i o n a l R e c t i f ie r n sa H HEXFETTM Power MOSFETS HEX Sia PartNumber Vos R0S(on)M" Die Olitine Rgurt Recommended Source Bonding Win mis m m Equivalent Device Type HEXFET Dt« P-Channel 1 1 1 2 2 2 3 3 3 4 4 IRFC9014 IRFC9110 IRFC9210* IRFC9024 , ) Recommended Source Bonding Wire mm mfa Equivalent Device Tn» H EX SEN SE N-Cbannel 2 3 3 3 3 3 3 4 4 4 , IRC530 IRC630 IRC634 IRC730 IRC830 IRCZ44 IRC540 IRC640 IRC644 IRC740 IRC840 IRCP054 (1) See page 105
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IRFC9034 IRLC014 IRLC110 IRLC120 IRLC034 IRLC140 IRF9540 equivalent IRL530 equivalent IRF9640 equivalent IRFC9120 IRFC9220 IRFC9130 IRFC9230 IRFC9140

IRC540 equivalent

Abstract: IRFC9230 H EXFET Power MOSFETs International Table I. HEXFET III Die (Continued) S Ö H R e C t if ie r Recomm. Source Bonding Wire mils I HEX Size Part Number VDS RDS(on) Max Die (1) Outline Figure Equivalent Device mm type P-Channel HEXFETs 1 1 1 2 2 IRFC9014 IRFC9110 , Bondir g Wire mils mm Equivalent Device Type HEXSense Die 2 3 3 3 3 3 3 4 4 4 4 4 4 5 5 5 5 5 5 , IRCZ44 IRC540 IRC640 IRC644 IRC740 IRC840 IRCP054 - Common characteristics: 250 h A Numbers in
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IRLC130 hexfets IRFC9044 IRFC9240 IRFR9014 IRF9610 IRF9Z24 IRF9620

IRF5905

Abstract: MOSFET IRF 9732 equivalent of 4.68 billion device-hours at a junction temperature of 90OC (see sections 4.1.1, 4.1.7, 4.2.1 , stress have accumulated the equivalent of over 50 billion device-hours at a junction temperature of 90OC , Data IRC530 IRC540 IRC630 IRC634 IRC640 IRC644 IRC730 IRC740 IRC830 IRC840 IRCZ24 IRCZ34 IRCZ44 , 3.3.5.1 Generation 3, Logic Level # of Total Failures Modes Equivalent lots Qty Device Hours Tj = 90°C; Vg , lots 2 3.3.5.6 # of lots 25 Total Qty 2366 Generation 5, N-Channel, Standard Device # Modes Equivalent
International Rectifier
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IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3205 application irf2807 equivalent HTGB

FL110

Abstract: LL110 IRCZ34 IRCZ44 IRC530 IRC540 IRC630 IRC640 IRC634 IRC644 IRC730 IRC740 IRC830 IRC840 IRCP054 V(BR)d s s , 0.30 0.30 0.30 0.25 0.25 0.25 0.64 0.51 0.51 0.51 0.51 0.51 0.51 0.25 0.25 0.25 Equivalent Device , Equivalent Device Type P-Channel HEXFETs 1 1 1 2 2 2 3 3 3 4 4 4 IRFC9014 IR FC 9 110 IRFC9210 IRFC9024 , 0.64 0.51 0.51 0.51 0.51 0.51 Equivalent Device Type IRCZ24 IRCZ34 IRC530 IRC630 IRC634 IRC730 IRC830 IRCZ44 IRC540 IRC640 IRC644 IRC740 IRC840 IRCP054 - - F-32
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FL110 LL110 irf7408 lr014 IRL1Z14G IRFC024 IRF7201 IRF9530 IRF9540 IRF9640 IRLC024 IRLC044

IRF540 n-channel MOSFET

Abstract: GES 9515 limitations when electrically probing in wafer form, some of the generic specifications of the equivalent , design to meet the specifications of the equivalent part: gfs, CjSS, C0ss> crss> and Tj(max) for HEXFET , grade electronic coating such as Dow Corning RTV3140 or equivalent may be applied. If the package is , 0.077 2670 38 IRC540 PD-9.498 A IRCC240 200 0.180 2670 38 IRC640 PD-9.568 IRCC244 250 0.280 2670
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IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRF540 p-channel MOSFET IRF540 mosfet with maximum VDS 30 V AN964 QD102 55M52

h bridge irfz44 mosfet

Abstract: thermostat pw : LOW-LEAKAGE SCHOTTKY BAT85 OR EQUIVALENT Figure 2. Low Voltage Operation r r i u m TE C H N O LO G Y , (STANDARD) IRC540 (SENSE FET) Q2, 04: IRFZ44 D1.D2: BAT83 Rs : DALE TYPE LVR-3 ULTRONIX RCS01 SIDE B: SHOWS
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h bridge irfz44 mosfet thermostat pw ramp generator LT11581 cmos 555 Airpax motor LT1158

cmos 555

Abstract: IRC540 equivalent BAT85 OR EQUIVALENT LT1158 F02 Figure 2. Low Voltage Operation 1158fb 10 LT1158 , Q4 Q1, Q3: IRF540 (STANDARD) IRC540 (SENSE FET) Q2, Q4: IRFZ44 D1, D2: BAT83 RS: DALE TYPE LVR
Linear Technology
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IRFZ44 equivalent 555 pwm mosfet lt1158 and boost converter PWM dc speed control of DC motor using 555 IRF540 MTP35N06E IRFZ4410 1N4148 1000F MBR330

PWM dc speed control of DC motor using 555 IRF540

Abstract: IRC540 equivalent BAT85 OR EQUIVALENT LT1158 F02 Figure 2. Low Voltage Operation 9 LT1158 U W U U , 47 Q4 Q1, Q3: IRF540 (STANDARD) IRC540 (SENSE FET) Q2, Q4: IRFZ44 D1, D2: BAT83 RS: DALE TYPE
Linear Technology
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lt3525 BAT85 equivalent 12v dc motor control by PWM driver PI control KRL Bantry Components motor driver IRFZ44 POWER SUPLY PWM REGULATOR
Abstract: LOGIC-LEVEL MOSFET T SOURCE D1: LOW-LEAKAGE SCHOTTKY BAT85 OR EQUIVALENT LT1158 F02 Figure 2. Low , CURRENT-SENSING MOSFET CONNECTION 9 47Ω Q4 Q1, Q3: IRF540 (STANDARD) IRC540 (SENSE FET) Q2, Q4 Linear Technology
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