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IR 10D

Catalog Datasheet MFG & Type PDF Document Tags

IR10D

Abstract: IR 10D MILKY WHITE DIFFUSED rim Vf Vr Ir-10D>JA jucd lf-10mA LIMITS OF SAFE OPERATION AT 25'C PER CHIP
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OCR Scan
IR10D IR 10D LDC-N3012R LDQ-N312RI LDO-N3012RI PRECI90N LDC-N3012RI

IR 10D

Abstract: RJP 608 IR D A T IRCL K P O R T 1 _ lE D 1 PORT1_LED2 PORT1_LED3 PORT2_LED1 PORT2_LED2 PORT2_LED3 PORT3_LED1 , IRB10 I Per Port LEDs IR D E N IRCOLBP IRCFSBP P e r-S e g m e nt Local IRB < 4 , directly to the 10Mbps IRB. When the MACACTIV pin is asserted, the LXT983 will drive the IR lUCFS and , actually has two independent IRBs, one per speed/segment. 0 D igital IRB signals include IRnDAT, IR InD E
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RJP 608 lxt983qc IEEE802 100BASE-TX/1 100BASE-FX 100-M LXT970 PDS-T983-R1

ITO-220AC

Abstract: FMX-10D FMX-10D Ultra fast Plastic Power Rectifiers VOLTAGE: 200V CURRENT: 10.0A FEATURE ITO , thermal resistance junction to case Storage and Operating Temperature Range FMX-10D units Vrrm , Trr 20 10 100 5.0 -55 to +150 nS Ir Rth(jc) Tstg, Tj µA ° C/W °C Note: 1. Rev.A1 Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A www.gulfsemi.com RATINGS AND CHARACTERISTIC CURVES FMX-10D Rev.A1 www.gulfsemi.com Gulf Semi
Gulf Semi
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FMX-10D ITO-220AC ITO-220 MIL-STD-750

IR 10D

Abstract: CS 10D . CS 50D Schottky-Bridge Rectifiers Schottky-Brückengleichrichter Nominal current ­ Nennstrom 1A Alternating input voltage Eingangswechselspannung 10.50 V DIL-plastic case , Alternating input voltage Eingangswechselspannung VVRMS [V] CS 10D CS 20D CS 30D CS 40D CS 50D , , wenn die Temperatur der Anschlüsse auf 100LC gehalten wird 310 211101 2 © by SEMIKRON CS 10D , VR = VRRM VR = VRRM IR IR Thermal resistance junction to ambient air Wärmewiderstand
SEMIKRON
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UL94V-0 150LC
Abstract: -10 DCP1833-30 400~800 0.30 30.0 20.0 50.0 SMA *2 DCP9951-10 DCP1831-10D 500 , dimensions. DCP1052-10D 1000~2000 0.80 10.0 20.0 5.0 SMA *2 DCP1052-20D 1000~2000 0.40 20.0 20.0 50.0 SMA *2 DCP1051-10D 1350~1650 0.80 10.0 20.0 5.0 SMA *2 DCP1051-20D 1350~1650 0.40 20.0 20.0 50.0 SMA *2 DCP1952-10D , Pf : Coupling DCP1951-10D 1800~2200 0.80 10.0 20.0 5.0 SMA *2 DI American Accurate Components
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DCP1833-10 DCP9931-10 DCP1831-10D DCP1831-20 DCP1831-30 DCP1831-41

301 schottky

Abstract: CS 10D . CS 50D Schottky-Bridge Rectifiers Schottky-Brückengleichrichter Nominal current ­ Nennstrom 1A Alternating input voltage Eingangswechselspannung 10.50 V DIL-plastic case , Alternating input voltage Eingangswechselspannung VVRMS [V] CS 10D CS 20D CS 30D CS 40D CS 50D , , wenn die Temperatur der Anschlüsse auf 100/C gehalten wird 2 300 01.04.2000 CS 10D . CS , VRRM VR = VRRM IR IR Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht ­
Diotec
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301 schottky 150/C

IR 10D

Abstract: CS 10D . CS 50D Schottky-Bridge Rectifiers Schottky-Brückengleichrichter Nominal current ­ Nennstrom 1A Alternating input voltage Eingangswechselspannung 10.50 V DIL-plastic case , .® Nr. E175067 Maximum ratings and Characteristics Type Typ CS 10D CS 20D CS 30D CS 40D CS 50D , 100/C gehalten wird 11.02.2003 2 1 CS 10D . CS 50D Characteristics Kennwerte Max , current Sperrstrom Tj = 25/C Tj = 100/C VR = VRRM VR = VRRM IR IR Thermal resistance
Diotec
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IR 10D

Abstract: CS 10D . CS 50D Schottky-Bridge Rectifiers Schottky-Brückengleichrichter Nominal current ­ Nennstrom 1A Alternating input voltage Eingangswechselspannung 10.50 V DIL-plastic case , Characteristics Type Typ CS 10D CS 20D CS 30D CS 40D CS 50D Grenz- und Kennwerte Alternating input , 2 284 28.02.2002 CS 10D . CS 50D Characteristics Kennwerte Max. average forward , Sperrstrom Tj = 25/C Tj = 100/C VR = VRRM VR = VRRM IR IR Thermal resistance junction to
Diotec
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1N5054

Abstract: 1n4816 Characteristics 10D lF(AV ) @ Max. 'FSM @50 Hz @ 60 Hz \2y/T Tj V r r m Range 48 50 48 50 48 50* 161.4 48 A 50 , 0D04107 0 48 55452 INTERNATIONAL R EC TIFIER 1N4816,1N5052,10D, 20D Series V O L T A G E R A T IN G S VRRM " MaxRepetitive Peak Reverse Voltage (V) 55C 04907 INTERNATIONAL RECTIFIER 0 I«R , SPECIFICATIONS 10D I f (AV) Max. average forward current @ Max. T © *FSM Max. peak one cycle, nonrepetitive , .) from device case. DO-2Q4AL (DO-41) © T= for 10D series, 1N4816 through 1N4822and 1N5052 through
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1N5054 PD2004C 10D10 1n5053 D0-204AL 1N4822 1N4816-22 1N5052-54
Abstract: Spartan-6 ADP5050 PVIN1A INPUT SUPPLY 4.5V TO 15V BST1 PVIN1B C1 10ð›F COMP1 C3 R3 , VREG VIO L2 = 2.2ð›H R5 C6 BST2 PVIN3 R11 D2 SW2B C9 10ð›F C11 G2 Q2 PVIN2B C5 10ð›F C4 47ð›F S1 R4 SS12 ON 0.8V TO 1.2V D1 VREG , VCCAUX C12 22ð›F SS34 BST4 PVIN4 C13 10ð›F SW4 BUCK 4 1.2A COMP4 C19 AGND , 0805 0603 0402 FDMA1024NZ Fairchild 2.0 × 2.0 × 0.8 QFN IRLHS6276 IR 2.0 × 2.0 à Analog Devices
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ADP505 BR10508-5-9/13

notebook display tft pinout

Abstract: SN 102 lcd the part number (i.e. LX7207ISPTR) Copyright © 2003 Rev 1.0d, 6/16/2004 Microsemi 11861 , IR RS Temperature Co-Efficient of RS Total Capacitance Attenuation in the Pass Band Cut-off , IR = 1mA VRWM = 5.0V, T = 25°C Each Line Each Line Each Line, 0V, 1MHz 50 Environment, DC , Rev 1.0d, 6/16/2004 then corrupt the operation of the sensitive TFT's and affect the display , Capacitance vs. Reverse Bias Copyright © 2003 Rev 1.0d, 6/16/2004 Microsemi 11861 Western Avenue
Microsemi
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LX7207 notebook display tft pinout SN 102 lcd 11KV 15KV LX7207ISP IEC61000-4-2

GRM033R60J104

Abstract: C02E10 % R6 / R7 / C8 : 0.1 max. F5 : 0.2 max. 50 · F min. Resistance to D.F. 14 Soldering Heat I.R. Dielectric Strength Appearance Capacitance Change D.F. Temperature Sudden Change I.R. 15 Dielectric , seconds. Let sit at room temperature for 48T4 hours, then measure. #Initial measurement W 0 10D for one , #Initial measurement W 0 Perform a heat treatment at 150Y 10D for one hour and then let sit for 48T4 hours , % humidity for 500T12 hours. The charge/discharge current is less than 50mA. #Initial measurement W 0 10D for
muRata
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C02E10 GRM033R60J104 GRM033R60J104KE19 GRM033 GRM155 GRM185 GRM188 GRM216

1N4822

Abstract: 1N4820 S.OAmp Molded Silicon Rectifier Diodes Major Ratings and Characteristics 10D 20D 1N4816 1N5052 Units , RECTIFIER SS~»F| 4S554S2 0004^7 48 55452 îNTERNATiONAL RECT IFIER 55C 04907 I«R 1N4816,1N5052,10D, 20D , 10D 20D 1N4816 1N5052 Units Conditions 'F(AV) Max. average forward current 1.5 2.0 1.5* 1.5* A 180 , Approximate weight 0.33 (0.012) - g (oz) Case Style DO-2Q4AL (DO-41) JEDEC ©T = TAfor 10D series, 1N4816 , device case.) ©Value of series resistance required for capacitlve loads, 10D, 1N4816, and 1N5052 series
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1N4820 IR 20D2 IR 10D 7 7510D1 10d05 IR 10D4 1IM4816 10D05
Abstract: junction capacitance at 4.0V, 1MHz symbol VF UGP 10A UGP 10B UGP 10D 0.95 IR trr CJ NOTES: 1. IF = 0.5A, IR = 1.0A, IRR = 0.25A 2. Thermal resistance from junction to ambient at 0.375â , IR less than 0.1µA * High temperature soldering guaranteed: 350°C/10 seconds * 0.375" (9.5mm , Making UGP 10A UGP 10A UGP 10B UGP 10B UGP 10D UGP 10D UGP 10F UGP 10F UGP , average,0.375"(9.5mm) lead lengths at TA = 55°C IR(AV) 100 µA Typical thermal resistance Leshan Radio Company
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UGP10A UGP10K MIL-S-19500 WI-250 DO-201AD D0-201AD
Abstract: IR less than 0.1µA * High temperature soldering guaranteed: 350°C/10 seconds * 0.375" (9.5mm , . Parameter Symbol symbol device marking code RGP 10A RGP 10A RGP 10B RGP 10B RGP 10D RGP 10D RGP 10G RGP 10G RGP 10J RGP 10J RGP 10K RGP 10K RGP 10M RGP 10M , IFSM 30 A IR(AV) 100 µA RθJA 55 °C/W TJ, TSTG â'"50 to +150 °C , symbol RGP 10A RGP 10B RGP 10D VF Maximum instantaneous forward voltage at 1.0A Leshan Radio Company
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RGP10A RGP10MA

LIMING relay

Abstract: 24VOO and mounting features. Calata^ Number Tims Range (in seconos) Input Volt f W ir in g D ia g r a m s , i i ìcv.y/ « , -2C-115A\' B TD1Q NA-2C-120N D T010W A-2C -240N D T010N A -2C-115AN D 0.1 1C I0 0.1 ic 10 0.1 lo 10 1 to 10D 1 to 10D 1 to 100 12VDC 24VOC 115VAC 50/60 Hz Ï2 V 0 C 24VOO 115VAC 50/60 Hz ta>« Af.r '0 CVKUtl iKKfKU £\
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OCR Scan
LIMING relay T154 relay 24V d LIMING VOLTAGE RELAY t amp 50/60H 29VDC TD10DA-2C-120W 10DA-2C-115AN 10DA-2C-24

usb emi filter

Abstract: 4216kv frequencies of 2.4GHz and 5.06.0 GHz PRODUCT HIGHLIGHT Copyright © 2002 Rev. 1.0d, 2005-02-07 , Resistance (-22) Temperature Coefficient of RS Pull Down Resistance Capacitor VRWM VBR IR RS RS TCOEFF RPD C Total Capacitance Copyright © 2002 Rev. 1.0d, 2005-02-07 CTOT Test Conditions IR = 1mA VRWM = 5.25V, T = 25°C Each Line Each Line Each Line Each Line Each Line Between I/O , . 1.0d, 2005-02-07 keyboards, control cards, interface boards, external memory expansion cards and
Microsemi
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LX7201-15ISF LX7201-22ISF STF201 usb emi filter 4216kv 122 sot23 6pin usb marking 62 USB LX7201- LX7201

diode EGP 30

Abstract: EGP10G EGP 10D EGP 10F EGP 10G UNITS VRRM VRMS 50 100 150 200 300 400 V , rated load (JEDEC Method) TA=75°C IFSM 30 A IR(AV) 30 µA *Maximum repetitive peak , °C ambient temperature unless otherwise specified. EGP 10A EGP 10B EGP 10C EGP 10D EGP 10F , °C TA=100°C IR VR = VRRM 10 100 µA trr IF = 0.5A IR = 1A IRR = 0.25A 50 nS
SIYU
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EGP10A EGP10G EGP10D EGP10F diode EGP 30 egp 100

EGP10G

Abstract: EGP10B voltage Maximum reverse current EGP 10D EGP 10F EGP 10G Unit TA= 25 TA=100 IR 10 100 µA trr 50 nS IF=0.5A IR=1.0A IRR=0.25A VR=10V IF=50mA RL=75 - 239 - EGP , 25 ambient temperature unless otherwise specified. EGP 10B EGP 10C EGP 10D EGP 10F , IR(AV) 30 µA RJA 65 /W Maximum average forward rectified current 8.3ms
SIYU
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EGP10B

GRM21BR60J106KE01

Abstract: treatment at 150 Y 10D for one hour and then let sit for 48T4 hours at room temperature. Perform the initial , #Initial measurement W 0 Perform a heat treatment at 150 Y 10D for one hour and then let sit for 48T4 hours , . #Measurement after test W 0 10D for one hour and then Perform a heat treatment at 150 Y let sit for 48T4 hours , Resistance Change to D.F. 14 Soldering I.R. Heat Dielectric Strength Appearance Capacitance Change D.F. I.R , Change D.F. I.R. Dielectric Strength 16 High Temperature High Humidity (Steady) No failure 27
muRata
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GRM21BR60J106KE01 C02E9 GRM21B GRM32D GRM32DR60J226KA01 1000T12
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