IPW90R340C3 PG-TO247 9R340C J-STD20 JESD22

CoolMOSTM Power Transistor Product Summary Features V DS @ T J = 25°C · Extreme dv/dt rated V R DS(on),max @ T

IPW90R340C3 IPW90R340C3 CoolMOSTM Power Transistor Product Summary Features V DS @ T J = 25°C · Extreme dv/dt rated V R DS(on),max @ T J=25°C · Lowest figure-of-merit R ON x Qg 900 0.34 94 nC Q g,typ · High peak current capability · Qualified according to JEDEC1) for target applications · Pb-free lead plating; RoHS compliant PG-TO247 PG-TO247 · Ultra low gate charge CoolMOSTM 900V is designed for: · Quasi Resonant Flyback / Forward topologies · PC Silverbox and consumer applications · Industrial SMPS Type Package Marking IPW90R340C3 IPW90R340C3 PG-TO247 PG-TO247 9R340C 9R340C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 15 T C=100 °C Unit 9.5 Pulsed drain current 2) I D,pulse T C=25 °C 34 Avalanche energy, single pulse E AS I D=3.1 A, V DD=50 V 678 Avalanche energy, repetitive t AR2),3) E AR I D=3.1 A, V DD=50 V 1 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ P tot Operating and storage temperature A V DS=0.400 V 50 V/ns static ±20 V AC (f>1 Hz) Power dissipation 3.1 ±30 T C=25 °C 208 W -55 . 150 °C T J, T stg Mounting torque Rev. 1.0 M3 and M3.5 screws page 1 60 Ncm 2008-07-29 IPW90R340C3 IPW90R340C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current IS Value Symbol Conditions Diode pulse current 2) Reverse diode dv /dt 4) Parameter I S,pulse Unit 9.2 T C=25 °C A 34 dv /dt 4 Values Symbol Conditions V/ns Unit min. typ. max. - - 0.6 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 900 - - V 2.5 3 3.5 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=V GS, I D=1 mA Zero gate voltage drain current I DSS V DS=900 V, V GS=0 V, T j=25 °C - - 2 V DS=900 V, V GS=0 V, T j=150 °C - 20 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.2 A, T j=25 °C - 0.28 0.34 V GS=10 V, I D=9.2 A, T j=150 °C - 0.76 - f =1 MHz, open drain - 1.3 - Gate resistance Rev. 1.0 RG page 2 2008-07-29 IPW90R340C3 IPW90R340C3 Parameter Values Symbol Conditions Unit min. typ. max. - 2400 - - 120 - - 71 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related 5) C o(er) Effective output capacitance, time related 6) C o(tr) - 280 - Turn-on delay time t d(on) - 70 - Rise time tr - 20 - Turn-off delay time t d(off) - 400 - Fall time tf - 25 - Gate to source charge Q gs - 11 - Gate to drain charge Q gd - 41 - Gate charge total Qg - 94 tbd Gate plateau voltage V plateau - 4.6 - V - 0.8 1.2 V - 510 - ns - 11 - µC - 41 - A V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 500 V V DD=400 V, V GS=10 V, I D=9.2A, R G=23.1 ns Gate Charge Characteristics V DD=400 V, I D=9.2 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time V GS=0 V, I F=9.2 A, T J=25 °C t rr Reverse recovery charge Q rr Peak reverse recovery current V R=400 V, I F=I S, di F/dt =100 A/µs I rrm 1) J-STD20 J-STD20 and JESD22 JESD22 2) Pulse width t p limited by T J,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISDID, di/dt200A/µs, VDClink=400V, Vpeak