IP Semiconductor Co., Ltd. High current density due to double mesa technology;

IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT20Q06-xx series

IPT20Q06-xxB IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT20Q06-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits. or for phase Control operation light dimmers, motor speed Controllers. MAIN FEATURES Symbol Value Unit IT(RMS) 20 A VDRM / VRRM 600 V VTM 1.65 V TO-220B ABSOLUTE MAXIMUM RATINGS Parameter Symbol Unit Tstg Tj Storage Junction Temperature Range Operating Junction Temperature Range Value -40 to +150 -40 to +125 Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Tj = 25 VDRM VRRM 600 600 V Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage Tj = 25 VDSM VRSM 700 700 V RMS onstate current (360º conduction angle ) Tc = 70 IT(RMS) 20 A ITSM 210 200 A I²t 200 A²s dI / dt 20 100 A/us IGM 8 A PG(AV) 1 W Non repetitive surge peak onstate Current (full cycle, Tj = 25) I²t Value for fusing t = 8.3ms t = 10ms tp = 10ms Critical Rate of rise of on-state current Gate supply : IG = 500mA dIG/dt = 1A/us Repetitive F = 50Hz Non repetitive Peak gate current tp = 20us, Tj = 125 Average gate power dissipation Tj = 125 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPT20Q06-xxB ELECTRICAL CHARACTERISTICS (Tj = 25 unless otherwise specified) IPT20Q06-xxB Symbol Test Condition Quadrant TE SE CE 10 25 50 Unit I II III IV VGT VD=VDRM, RL=3.3K, VGD Tj = 125 MAX 1.3 V ALL VD = 12V RL = 30 MAX ALL IGT MIN 0.2 V I III IV IL IG = 1.2 IGT 30 80 MAX mA II IH 40 40 mA IT = 100mA 25 35 mA VD = 67% VDRM gate open Tj = 125 dV/dt MAX MIN 40 200 V/us (dV/dt) c = 0.1V/us Tj = 125 (dV/dt) c = 10V/us Tj = 125 (dI/dt)c 8.5 MIN 3.0 Without snubber Tj = 125 STATIC CHARACTERISTICS Symbol Test Conditions Value (MAX) Unit VTM ITM = 28A, tp = 380uS Tj = 25 1.65 V IDRM VD = VDRM Tj = 25 20 uA IRRM VR = VRRM Tj = 125 3 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j c) Junction to case (AC) 1.3 /W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPT20Q06-xxB PACKAGE MECHANICAL DATA TO-220B Millimeters Min Typ Max A 4.4 4.6 B 0.61 0.88 C 0.46 0.70 C2 1.23 1.32 C3 2.4 2.72 D 8.6 9.7 E 9.8 10.4 F 6.2 6.6 G 4.8 5.4 H 28 29.8 L1 3.75 L2 1.14 1.7 L3 2.65 2.95 V 40º 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 3 IPT20Q06-xxB IPT20Q06-xxB 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4