IPB08CN10N IPI08CN10N IPP08CN10N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3

IPI08CN10N G OptiMOSTM2 Power-Transistor IPP08CN10N G Product Summary Features V DS 8.2 m ID · Excellent gate charge x R

IPB08CN10N IPB08CN10N G IPI08CN10N IPI08CN10N G OptiMOSTM2 Power-Transistor IPP08CN10N IPP08CN10N G Product Summary Features V DS 8.2 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max (TO263) · N-channel, normal level 100 95 A · Very low on-resistance R DS(on) · 175 °C operating temperature · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target application · Ideal for high-frequency switching and synchronous rectification · Halogen-free according to IEC61249-2-21 IEC61249-2-21 Type IPB08CN10N IPB08CN10N G IPI08CN10N IPI08CN10N G IPP08CN10N IPP08CN10N G Package PG-TO263-3 PG-TO263-3 PG-TO262-3 PG-TO262-3 PG-TO220-3 PG-TO220-3 Marking 08CN10N 08CN10N 08CN10N 08CN10N 08CN10N 08CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 95 T C=100 °C Unit 68 Pulsed drain current2) I D,pulse T C=25 °C 380 Avalanche energy, single pulse E AS I D=95 A, R GS=25 262 Reverse diode dv /dt dv /dt I D=95 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C 6 Gate source voltage3) V GS Power dissipation P tot Operating and storage temperature T j, T stg A kV/µs ±20 V 167 W -55 . 175 T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.08 mJ °C 55/175/56 page 1 2010-04-26 IPB08CN10N IPB08CN10N G IPI08CN10N IPI08CN10N G Parameter IPP08CN10N IPP08CN10N G Values Symbol Conditions Unit min. typ. max. - - 0.9 minimal footprint - - 62 6 cm2 cooling area 5) - - 40 100 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction 4) ambient (TO220, TO262, TO263) R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=130 µA 2 3 4 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=95 A, (TO263) - 6.1 8.2 m V GS=10 V, I D=95 A, (TO220, TO262) - 6.4 8.5 - 1.5 - 57 113 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=95 A J-STD20 J-STD20 and JESD22 JESD22 2) See figure 3 3) Tjmax=150 °C and duty cycle D=0.01 for Vgs2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 200 160 140 150 120 100 g fs [S] I D [A] 100 175 °C 80 60 25 °C 50 40 20 0 0 0 2 4 6 8 Rev. 1.08 0 40 80 120 160 I D [A] V GS [V] page 5 2010-04-26 IPB08CN10N IPB08CN10N G IPI08CN10N IPI08CN10N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=95 A; V GS=10 V IPP08CN10N IPP08CN10N G V GS(th)=f(T j); V GS=V DS parameter: I D 20 4 3.5 1300 µA 3 130 µA 2.5 V GS(th) [V] R DS(on) [m] 15 98 % 10 typ 2 1.5 5 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss Coss 175 °C 175 °C, 98% 25 °C 102 I F [A] C [pF] 103 25 °C, 98% Crss 102 101 101 100 0 20 40 60 80 V DS [V] Rev. 1.08 0 0.5 1 1.5 2 V SD [V] page 6 2010-04-26 IPB08CN10N IPB08CN10N G IPI08CN10N IPI08CN10N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 V GS=f(Q gate); I D=95 A pulsed parameter: T j(start) IPP08CN10N IPP08CN10N G parameter: V DD 100 12 50 V 10 25 °C 20 V 100 °C 8 V GS [V] I AS [A] 150 °C 10 80 V 6 4 2 1 0 1 10 100 1000 0 20 40 60 80 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 115 V GS Qg V BR(DSS) [V] 110 105 V g s(th) 100 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.08 page 7 2010-04-26 IPB08CN10N IPB08CN10N G IPI08CN10N IPI08CN10N G IPP08CN10N IPP08CN10N G PG-TO220-3 PG-TO220-3: Outline Rev. 1.08 page 8 2010-04-26 IPB08CN10N IPB08CN10N G IPI08CN10N IPI08CN10N G IPP08CN10N IPP08CN10N G PG-TO262-3-1 PG-TO262-3-1 (I²PAK) Rev. 1.08 page 9 2010-04-26 IPB08CN10N IPB08CN10N G IPI08CN10N IPI08CN10N G IPP08CN10N IPP08CN10N G PG-TO-263 PG-TO-263 (D²-Pak) Rev. 1.08 page 10 2010-04-26 IPB08CN10N IPB08CN10N G IPI08CN10N IPI08CN10N G IPP08CN10N IPP08CN10N G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.08 page 11 2010-04-26