RT3U11M INK0001AX INJ0001AX SC-88 JEITASC-88 50VVGS 10VID 10VVGS -50VVGS -10VID

Composite Transistor For high speed switching Silicon N-channel+P-channel MOSFET DESCRIPTION RT3U11M is a composite transistor

RT3U11M RT3U11M Composite Transistor For high speed switching Silicon N-channel+P-channel MOSFET DESCRIPTION RT3U11M RT3U11M is a composite transistor built with INK0001AX INK0001AX OUTLINE DRAWING Unitmm and INJ0001AX INJ0001AX chips in SC-88 SC-88 package. FEATURE 2.1 1.25 0.425 0.425 Input impedance is high, and not necessary to consider a drive Low on Resistance. RON=3.5 / 7(Tr1/Tr2) (TYP) High speed switching. Small package for easy mounting. 2.1 1.3 0.65 0.65 Vth is low, and drive by low voltage is possible. Vth=0.61.2V 0.23 electric current. APPLICATION 0.13 00.1 *P-channel MOSFET Tr2's minus sign is omitted 0.7 0.9 High speed switching , Analog switching TERMINAL CONNECTOR SOURCE1 GATE1 DRAIN2 SOURCE2 GATE2 :DRAIN1 Tr.1 Tr.2 JEITASC-88 JEITASC-88 MAXIMUM RATING (Ta=25) (Tr1,Tr2 Common) SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage 50 VGSS Gate-source voltage ±8 V Drain current(DC) 100 mA IDP Drain current(Pulse) 400(1) mA PD Total power dissipation 150 mW Tch Channel temperature 150 Tstg Range of Storage temperature -55150 MARKING V ID 1Pw10µs, Duty cycle1% ISAHAYA ELECTRONICS CORPORATION 6 5 4 . . 2 3 RT3U11M RT3U11M Composite Transistor For high speed switching Silicon N-channel+P-channel MOSFET Tr1 ELECTRICAL CHARACTERISTICS (Ta=25) SYMBOL V(BR)DSS Parameter Drain-source breakdown voltage Test conditions Limits Unit Min Typ Max ID=100µAVGS=0V 50 - - V IGSS Gate-source leak current VGS=±5VVDS=0V - - ±0.5 µA IDSS Zero gate voltage drain current VDS=50VVGS 50VVGS=0V - - 1.0 µA 0.6 - 1.2 V - 250 - mS Vth | Yfs | RDS(ON) Ciss Coss ton toff Gate threshold voltage ID=250µAVDS=VGS Forward transfer admittance VDS=10VID 10VID=0.1A Static drain-source on-state resistance ID=100mAVGS=4.0V Input capacitance Output capacitance VDS=10VVGS 10VVGS=0Vf=1MHz VDD=5VID=10mA VGS=05V Switching time - 3.5 - - 24 - - 5 - - 11 - - 50 - pF ns Tr2 ELECTRICAL CHARACTERISTICS (Ta=25) SYMBOL V(BR)DSS Parameter Test conditions Limits Min Typ Max Unit Drain-source breakdown voltage ID=-100µAVGS=0V -50 - - V IGSS Gate-source leak current VGS=±5VVDS=0V - - ±0.5 µA IDSS Zero gate voltage drain current VDS=-50VVGS -50VVGS=0V - - -1.0 µA Vth | Yfs | RDS(ON) Ciss Coss ton toff Gate threshold voltage ID=-250µAVDS=VGS -0.6 - -1.2 V Forward transfer admittance VDS=-10VID -10VID=-0.1A - 220 - mS Static drain-source on-state resistance ID=-100mAVGS=-4.0V Input capacitance Output capacitance Switching time VDS=-10VVGS -10VVGS=0Vf=1MHz VDD=-5VID=-10mA VGS=0-5V ISAHAYA ELECTRONICS CORPORATION - 7.0 - - 28 - - 5.2 - - 13 - - 135 - pF ns RT3U11M RT3U11M Composite Transistor For high speed switching Silicon N-channel+P-channel MOSFET Tr1 TYPICAL CHARACTERISTICS ID - VDS Ta=25 Ta=25 ID - VDS(Low voltage region) 1 100 1.5V 1.0V Drain current ID (mA) 80 1.4V 60 1.3V 40 1.2V 20 0.6 0 5 Drain-Source voltage VDS (V) 0.9V 0.4 0.85V 0.2 1.1V VGS=1.0V 0 0.95V 0.8 Drain current ID (mA) 1.6V VGS=0.8V 0 0 10 0.1 0.2 0.3 0.4 Drain-Source voltage VDS (V) IDR - VDS ID - VGS Drain reverse current IDR (mA) 100 1000 Drain current ID (mA) VGS=0V Ta=75 25 -25 10 VDS=10V 100 Ta=75 25 -25 10 1 1 0 -0.5 -1 -1.5 Drain-Source voltage VDS (V) 0 -2 1 2 3 4 Gate-Source voltage VGS (V) |Yfs| - ID 5 RDS(ON) - ID 1000 100 Drain-Source ON Resistance RDS(ON) () VDS=10V Forward transfer admittance |Yfs| (mS) 0.5 100 Ta=75 25 -25 10 1 VGS=4V 10 Ta=75 1 25 -25 0.1 1 10 100 Drain current ID (mA) 1000 1 10 100 Drain current ID (mA) ISAHAYA ELECTRONICS CORPORATION 1000 RT3U11M RT3U11M Composite Transistor For high speed switching Silicon N-channel+P-channel MOSFET Tr1 TYPICAL CHARACTERISTICS RDS(ON) - VGS Vth - Ta 2 ID=100mA 10 Ta=75 25 -25 Gate threshold voltage Vth (V) Drain-Source ON Resistance RDS(ON) () 100 1 0 2 4 6 8 Gate-Source voltage VGS (V) ID=250uA VDS=VGS 1.5 1 0.5 0 -50 10 -25 0 25 50 75 Ambient Temperature Ta () t - ID C - VDS 10000 100 1000 tf Capacitance C (pF) Ta=25 VDD=5V VGS=05V toff Switching time t (ns) 100 100 ton 10 Ciss 10 Coss Ta=25 VGS=0V tr 1 1 0.1 1 10 Drain current ID (mA) 0.1 100 1 10 Drain-Source voltage VDS (V) 100 Tr1 Switching time test condition Test circuit OUT 5V IN 5V RL 50 0 Input Waveform 0V VDD 10s VDD=5V Duty1% Common source Ta=25 90% 10% VDD 10% Output Waveform 90% VDS(ON tf tr ton ISAHAYA ELECTRONICS CORPORATION toff RT3U11M RT3U11M Composite Transistor For high speed switching Silicon N-channel+P-channel MOSFET Tr2 TYPICAL CHARACTERISTICS ID -VDS -1.6V Ta=25 -1.5V -80 -1.4V -60 -1.3V -40 -1.2V -1.1V -20 ID-VDS (Low voltage region) -10 Drain current ID (mA) Drain current ID (mA) -100 VGS=-1.0V Ta=25 -8 -1.00V -6 -0.95V -4 -0.90V -0.85V -2 VGS=-0.80V 0 0 0 -2 -4 -6 -8 0 -10 -0.1 IDR-VDS Drain current ID (mA) Reverse Drain current IDR (mA) VGS=0V -10 -0.5 VDS=-10V -100 Ta=75 25 -25 -10 -1 -1 0 0.5 1 0 1.5 VDS=-10V Ta=75 25 -25 10 1 -1 -10 Drain current ID (mA) -100 Drain-Sourse ON Resistance RDS(ON) () |Yfs|-ID 1000 -1 -2 -3 Gate-Sourse voltage VGS (V) Drain-Sourse voltage VDS (V) Forward transfer admittance |Yfs| (mS) -0.4 ID-VGS -1000 Ta=75 25 -25 100 -0.3 Drain-Sourse voltage VDS (V) Drain-Sourse voltage VDS (V) -100 -0.2 RDS(ON)-ID 100 VGS=-4V 10 Ta=75 25 -25 1 0.1 -1 -10 -100 Drain current ID (mA) ISAHAYA ELECTRONICS CORPORATION -1000 RT3U11M RT3U11M Composite Transistor For high speed switching Silicon N-channel+P-channel MOSFET RDS(ON)-VGS 100 Vth-Ta -2 ID=-250uA VDS=VGS ID=-100mA Gate threshold voltage Vth (V) Drain-Sourse ON Resistance RDS(ON) () Tr2 TYPICAL CHARACTERISTICS 10 Ta=75 25 -25 -1.5 -1 -0.5 1 0 0 -2 -4 -6 -8 -50 -10 0 t-ID 10000 Ta=25 VDD=-5V VGS=0-5V tf 100 ton 10 75 100 Ciss Capacitance C (pF) 1000 50 C-VDS 100 toff 25 Ambient Temperature Ta () Gate-Sourse voltage VGS (V) Switching time t (ns) -25 10 Coss 1 tr Ta=25 VGS=0V 0.1 1 -0.1 -1 -10 -0.1 -100 -1 -10 -100 Drain-Sourse voltage VDS (V) Drain current ID (mA) Tr2 Switching time test condition Test circuit OUT IN 0 RL 50 -5V 10s VDD=-5V Duty1% Common source Ta=25 0V 10% Input Waveform 90% -5V VDD VDS(ON 90% Output Waveform 10% VDD tf tr ton ISAHAYA ELECTRONICS CORPORATION toff 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Sep.2010