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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

IN60 diode

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IN60 diode

Abstract: IN60 Psub laser diode. The APC circuit is switched off when pin 28 is high. APC 46 1k 47 + ­ 28 LDS , wave. VIN60 = 1kHz + VC + 95 mVDC VIN60, VIN34 90deg phase difference input signal V IN60 = VIN34 = 1 VPP The maximum frequency for V IN60 (V IN34) such that the pin 21 signal is still a square wave. V21 , pin 28 such that APC is on. GF2 = 0, GF1 = 1, GF0 = 0 20log (V55 / VIN60) ­ GVFA1 V IN60 = 4kHz, 0.5 VPP GF2 = 0, GF1 = 1, GF0 = 1 20log (V55 / VIN60) ­ GVFA1 V IN60 = 4kHz, 0.5 VPP GF2 = 1, GF1 = 1, GF0
Hitachi Semiconductor
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IN60 diode IN60 diode IN60 Hitachi DSA002788 equivalent diode for diode IN34 RFS TM3 HA12188AF ADE-207-183 HA12188F FP-56 D-85622

IN60 diode

Abstract: equivalent diode for diode IN60 diode. The APC circuit is switched off when pin 28 is high. APC 46 1k 47 28 LDS + ­ Unit R , VC + 95 mVDC 26 VIN60, VIN34 90deg phase difference input signal V IN60 = VIN34 = 1 VPP The maximum frequency for V IN60 (V IN34) such that the pin 21 signal is still a square wave. 27, 28 V21 , pin 28 such that APC is on. 56 GF2 = 0, GF1 = 1, GF0 = 0 20log (V55 / VIN60) ­ GVFA1 V IN60 = 4kHz, 0.5 VPP 57 GF2 = 0, GF1 = 1, GF0 = 1 20log (V55 / VIN60) ­ GVFA1 V IN60 = 4kHz, 0.5 VPP
Hitachi Semiconductor
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equivalent diode for diode IN60 hitec servo Laser pickup 11t 36 Photodiode and amplifier IC for CD s56 diode Hitachi DSA00480

IN60 diode

Abstract: LM 3171 I 33 nF TTT D2 1.5V NOTE: D1 â'" Cutting Voltage (0.2-0.3V). It should be a Germanium diode (Model No. IN60). D2 â'" Cutting Voltage (0.2-0.3V). It should be a Germanium diode (Model No. IN60). SB â
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C7171D1V LM 3171 C7171D1 IC 8 PIN LM 6142 calculator chip Diode A3X 18 pin 7 digit LCD display C7171D C7171E1 C9318E1
Abstract: n s ) . -3 .0 V DC Input Diode Current with V in < 0 .±20 mA DC Output Diode Current with V out < 0 . ±50 mA DC Output Current Max. Sink C urrent/P mA Maximum Power D is s ip a tio n -
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QS74FCT3245 QS74FCT32245 74F245 74LVT245 74FCT245T QSFCT3245

zld0500

Abstract: laptop battery pin definition 'ins av0 C O N D IT IO N S V in=6.0V V in=6.0V (Note 2, Note 4) V in=6.0 to 20V M IN 4.9 TYP , regulator when taken high. It includes a diode wiredto Vin and so will pass current ifta ken more than 0.5V
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zld0500 laptop battery pin definition ic regulator laptop AC voltage regulator 12v output 5 pin ZLD0500
Abstract: Parasitic diode Applications · Constant voltage power supply of VTR, camera, OA equipment, cordless , * Conditions V in=6.0 V, Iout=40 mA |O ut= 40 mA IO ut= 50 jaAto 60 mA V in=6.0 V V|N =6.0 V, No loaded V in , with the output voltage. * Parasitic diode Figure 7 Control transistor 120 mV typical (in case of the S , diode (Di) through the quiescent current (lss) of the S-813 Series, and the GND terminal rises for the , voltage regulator output terminal to another power supply, please insert a diode to protect the IC -
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S-812 S-81330HG S-81332HG S-81350HG

HA*12185NT

Abstract: ha12185nt , D4, D5, D7, D8, D13, D14 14 3 D3, D6, D9 Diode SBR 3A 40V Power DI123 Diodes Inc
Hitachi Semiconductor
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HA*12185NT ha12185nt HA13158 equivalent ha12185 HA12158 ha13119 HA12134A HA12135A HA12136A ADE-207-016A DP-16 FP-16DA

IN58 diode

Abstract: 4) V in=6.0 to 20V Il= 1 0 to 3 0 0 m A V in=6V lL=10m A l L= 1 00 m A lL=300m A V in=6.0V, lL=0 V , disables the regulator w h e n taken high. It includes a diode w ire d to Vin and so w ill pass cu rre n t
Texas Instruments
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IN58 diode SBAU186 DDC264EVM DDC264 SBAS368 REG1117-5 SBVS001

zld0500

Abstract: ZLD0 Temperature charac teristic of AV out Symbol VoUT Vdif AVout1 AV qut2 AV0ut3 Iss V|N AV out ATa V in=6.0 V , influenced by input voltage or temperature fluctuation. Vi, GND * Parasitic diode Figure 4 Reference , typical I/O voltage difference. NOTE: A parasitic diode is generated between V,N and V 0 utIf the , . Parasitic diode Figure 6 Control transistor Keep V qut less than V,N+ 0 .3 V. Seiko Instruments Inc , high to lower the power consumption of whole systems. Current flows to the Zener diode (Di) through the
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ZLD0

IN60 diode

Abstract: /IN6_0/SIN3_0 P006/IN7_0/SOT3_0 P007/IN8_0/SCK18_1/SCK3_0 P008/IN9_0/SCS180_1/SCS30_0/TIOA0_0 P009 , Base timer ch.1 TIOA output pin (1) General-purpose I/O port IN6_0 - A Input capture ch
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S-81240SG S-81245SG S-81250PG S-812XXSG S-81211SG S-81215SG

SCS1600

Abstract: S6J311EJAA Recirculating 4-15 4-19 in-60 in-62 in-CAB S H IF T R E G IS T E R S 1402A 140:iA 1404A 1405A , /Date Decoder-Driver in-50 in-60 8-7 7-20 CMOS 32.768 kHz Oscillator-Divider 8-11 in
Spansion
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S6J311EJAA SCS1600 S6J3110 S6J311E DS708-00002 DS708-00002-0

2107B-6

Abstract: M2102A DIODES The primary considerations in the selection of a replace­ ment diode are the maximum forward , type as the diode being replaced. In some cases, how­ ever, germanium diodes may be used to replace silicon diodes, or vice versa. This is particularly true where the diode is being used as a rectifying
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2107B-6 M2102A intel 2102 Static RAM intel 8008 cpu display 1602A M3101 D1 1024H

diode in58

Abstract: DMT 98 ATEX G 001 IN58A IN60 IN60A IN6I IN62 IN63 IN63A IN65 IN66 IN66A IN67 IN67A IN68 IN68A IN69 IN69A , new diode products: Silicon Glass Rectifiers and Miniature Silicon Whiskerless Diodes. SILICON
Phoenix Contact
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diode in58 DMT 98 ATEX G 001 OMRON POWER RELAY MP2 Yokogawa Transducer honeywell dcs manual VIP-CAB-FLK34/0 VIP-CAB-FLK40-0 VIP-CAB-FLK40/0 VIP-CAB-FLK50-0 VIP-CAB-FLK50/0 VIP-CAB-FLK50/FR/OE/0