IN4148 1N4448 1N4148 - Datasheet Archive

 

High-speed switching diode Features 1. High reliability 2. High speed (trr4 ns) Applications Extreme fast switches Construction

 

IN4148 IN4148 High-speed switching diode Features 1. High reliability 2. High speed (trr4 ns) Applications Extreme fast switches Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25 Parameter Test Conditions Symbol Value Unit Repetitive peak reverse voltage VRRM 100 V Reverse voltage VR 75 V IFSM 2 A IFRM 500 mA IF 300 mA Peak forward surge current Type tp=1s Repetitive peak forward current Forward current Average forward current VR=0 IFAV 150 mA Power dissipation I=4mm TL25 PV 500 mW Tj 175 Tstg -65~+175 Symbol Value Unit RthJA 350 K/W Junction temperature Storage temperature range Maximum Thermal Resistance Tj=25 Parameter Junction ambient Test Conditions I=4mm TL=constant WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com IN4148 IN4148 Figure 3. Forward current vs. forward voltage Figure 4. Reverse current vs. reverse voltage Dimensions in mm Cathode identification 0.55 max. Cathode Anode 2.0 max. 26 min. 4.2 max. 26 min. Standard Glass Case JEDEC DO 35 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com IN4148 IN4148 Electrical Characteristics Tj=25 Parameter Symbol Min IF=5mA 1N4448 1N4448 VF 0.62 1N4148 1N4148 VF IF=100mA Reverse current Type IF=10mA Forward voltage Test Conditions 1N4448 1N4448 VF Typ Max Unit 0.72 V 0.86 1 V 0.93 1 V VR=20V IR 25 nA VR=20V, Tj=150 IR 50 A VR=75V IR 5 A Breakdown voltage IR=100A,tp/T=0.01,tp=0.3ms V(BR) 100 V Diode capacitance VR=0, f=1MHz, VHF=50mV CD Rectification efficiency VHF=2V, f=100MHz R Reverse recovery time IF= IR=10mA, iR=1mA trr 8 ns IF=10mA, VR=6V, iR=0.1×IR, trr 4 ns 4 pF 45 % RL=100 Characteristics (Tj=25 unless otherwise specified) Figure 1. Forward voltage vs. junction temperature WEJ ELECTRONIC CO. Figure 2. Forward current vs. forward voltage Http:// www.wej.cn E-mail:wej@yongerjia.com