NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ISL9N312ASK8T ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET® Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. · Fast Switching Packaging · Qg Total 13nC (Typ), VGS ... | Original |
12 pages, |
TB334 N312AS MS-012AA ISL9N312ASK8T AN9322 AN9321 ISL9N312ASK8T abstract |
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| Abstract: ISL9N305ASK8T ISL9N305ASK8T N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. · Fast switching Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. · rDS(ON) = 0.0064 (Typ), VGS = 4.5V Applications · Qgd (Typ) = 1 ... | Original |
11 pages, |
ISL9N305ASK8T ISL9N305ASK8T abstract |
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| Abstract: ISL9N305ASK8T ISL9N305ASK8T N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. · Fast switching Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. · rDS(ON) = 0.0064 (Typ), VGS = 4.5V Applications · Qgd (Typ) = 1 ... | Original |
11 pages, |
ISL9N305ASK8T ISL9N305ASK8T abstract |
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| Abstract: ISL9N312ASK8T ISL9N312ASK8T Data Sheet 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET® Trench Power MOSFETs March 2001 File Number 5034 PWM Optimized [ /Title This device employs a new advanced trench MOSFET (ISL9 technology and features low gate charge while maintaining Features N312A N312A low on-resistance. SK8T) Optimized for switching applications, this device improves · Fast Switching /Subjec the overall efficiency of DC/DC converters and allows · rDS(ON) = 0.010 (Typ), VGS = ... | Original |
13 pages, |
TB334 MS-012AA ISL9N312ASK8T AN9321 N312A ISL9N312ASK8 N312ASK8 ISL9N312ASK8T abstract |
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