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ISO1176TREFERENCE Texas Instruments ISO1176T Reference Design Board visit Texas Instruments
ISL21080-EVALZ Intersil Corporation 300nA NanoPower Voltage References; Package: Eval Board visit Intersil
LM4050QCIM3X8.2/NOPB Texas Instruments TWO TERM VOLTAGE REFERENCE visit Texas Instruments
LM4041CEM3X-1.2 Texas Instruments TWO TERM VOLTAGE REFERENCE visit Texas Instruments
LM4041CIM7-1.2 Texas Instruments TWO TERM VOLTAGE REFERENCE visit Texas Instruments
CC1190EM915-RD Texas Instruments CC1190EM 915MHz Reference Design visit Texas Instruments

IGBT cross reference

Catalog Datasheet MFG & Type PDF Document Tags

STR-G6551

Abstract: STR-F6654 Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM , SPP04N60C3 V1.0, 2002-04 Alphanumerical Cross Reference IGBT Fairchild IGBT Product Name , Cross Reference 600 18 V1.0, 2002-04 Alphanumerical Cross Reference IGBT Fairchild , Reference VCE [V] 600 19 SGB06N60 V1.0, 2002-04 Alphanumerical Cross Reference IGBT , Cross Reference IGBT Fairchild (previous Intersil) (cont'd) VCE [V] IC [A] VCEsat [V
Infineon Technologies
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STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 2002-S P-DSO14/16 P-TO-220

power transistors cross reference

Abstract: semiconductors cross reference ,00 SIPMOS Halbleiter Typenvergleichsliste Diskette 51/4" SIPMOS Semiconductors Cross Reference , SIMOPAC/IGBT SIPMOS Semiconductors Small-Signal Components SIPMOS Halbleiter/SIPMOS Semiconductors Smart SIPMOS TEMPFET, PRÜFET, Dimmer Datenblätter/Data Sheets IGBT Power Transistors 12.91 32 B152-H6536-X-X , SIPMOS Kleinsignaltransistoren SIPMOS Small-Signal Transistors Leistungshalbleiter SIPMOS und IGBT Power Semiconductors SIPMOS and IGBT Power Modules SIMOPAC and IQBT (Karton) SIPMOS Leistungstransistoren SIPMOS Power
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OCR Scan
B152-H6436-X-X-7600 power transistors cross reference semiconductors cross reference IGBT cross reference 7400 B152-H6536-X-X-7600 B152-B6509-X-X-7400 B152-H6570-X-X-7600 B152-H6604-X-X-7600 B152-H6389-X-X-7400 B152-H6155-X-X-7400

Epcos

Abstract: IGBT cross reference Cross Reference for IGBT Snubber Capacitors Module / Capacitors Film Capacitor Division FK PM, January 2005 IGBT Module / Capacitor Cross USER GUIDE 1 : Choose a modul 1 Modul , 2 5 eg.: T5 eg.: 18x39,5x41,5 EPCOS Ordering Code eg: T5 : B32656S7474K565 IGBT - Module List IGBT - Module List IGBT - Module List IGBT - Module List IGBT - Module List IGBT Capacitors List (MKP) Kapazitätstoleranz(+): +/- 20% = M, +/- 10% = K, +/- 5% = J Terminal
EPCOS
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FS225R12KE KMK0785-J KMK0787-1 KMK0789-H Epcos IGBT cross reference semikron box capacitor marking code IGBT cross reference semikron eupec IGBT cross capacitor cross reference KMK0786-S KMK0788-9 KMK0790-K

SGH80N60RUFD

Abstract: bup314 equivalent Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name , device no device no device AI 7/99 Infineon Technologies Cross Reference List Fast IGBT & , SGW30N60 SGW10N60,SGW15N60 AI 7/99 Infineon Technologies Cross Reference List Fast IGBT & , SGP20N60 SGP20N60 SGP04N60 AI 7/99 Infineon Technologies Cross Reference List Fast IGBT & , Cross Reference List Fast IGBT & DuoPack Company IXYS IXYS IXYS IXYS IXYS IXYS IXYS IXYS
Infineon Technologies
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SGH30N60UFD SGH80N60RUFD BUP314 bup314 equivalent bup314d SGU06N60 SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGL10N60RUFD

The field stop IGBT FS IGBT

Abstract: 7MBR75UD120 U-series IGBT Modules (1,200 V) 115 Fig.3 Comparison of cross sections of unit cells of a planar , /div, Time : 5 µs/div, VGE : 20 V/div Fig.4 Comparison of cross sections of IGBT unit cells Fig , development of power electronics. Reference (1) Laska, T. et al. The Field Stop IGBT (FS IGBT) - A New , U-series IGBT Modules (1,200 V) Yuichi Onozawa Shinichi Yoshiwatari Masahito Otsuki 1 , IGBT in 1988, Fuji Electric has made efforts to improve the IGBT in pursuit of lower loss and lower
Fuji Electric
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The field stop IGBT FS IGBT 7MBR75UD120 7MBR10UC120 3MBI150U-120 7MBR25UA120 7MBI75U

10A600V

Abstract: 1XGH20N60AU1 Circuit withstand time M in.lOuS for M otor Application, ELECTRONICS Cross Reference DESCRIPTION , SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS HUfU3NÖ0B3S SIEM ENS IXYS hü'mSNtäoöä U ltiJ 102 H , 1U2UNÖUC3UK H U IU «¡/N bÜ U 3Ü K ' BUP400D BUP602D IXSH20N60AU1 IXSH30N60AU1 279 Cross Reference @6oov D E S C R IP T IO N SAMSUNG SÜKbNÖUUP SGPBNbUUF spec: " 3A,tiUUV,U-MAR 3A,t>UUV, 1U , -22U 12A ,bü0V,Ü 2-PAK IR IGBT ONLY HIGH PERFORMANCE SÜH13NB0UIii(jP23NbOUI~ J jGH23N60UF
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HGTP20N6QB3 1XGH20N60AU1 12A600V 20A1200V 5A1200V CT60AM-20 10A600V 20a600v 5n60r HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A GT25JT01

semiconductors cross reference

Abstract: 7400 Typenvergleichsliste Diskette 5V a"\ SIPMOS Semiconductors Cross Reference List Diskette 3V2": SIPMOS-Halbleiter Typenvergleichsliste Diskette 3V2": SIPMOS Semiconductors Cross Reference List Themenschriften/Special-Subject , SIMOPAC/IGBT SIPMOS-Semiconductors Small-Signal Components SIPMOS Halbleiter/SIPMOS Semiconductors Smart SIPMOS TEMPFET PROFET Dimmer Datenblätter/Data Sheets IGBT Power Transistors Produ ktsch riften/Prod uct , , SIPMOS und IGBT Power Semiconductors SIPMOS and IGBT Power Modules SIMOPAC and IQBT (Karton
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B152-H6509-X-X-7400 H38-S2009 H38-S2021 G3876 D-8510

7BR25SA120

Abstract: IGBT cross reference the IGBT in a half bridge topology. However, providing the negative bias adds gate drive complexity , at ground reference ­ the same as the control circuitry. Thus it would be desirable to develop an IGBT that has high dv/dt capability when "positive only" gate drive is used. Such a device has been developed. The developed device performance is examined against an IGBT that requires negative gate drive , elements. The three major IGBT parasitic capacitances are shown in Figure 1. ­ Cce, Cgc, and Cge. dv
International Rectifier
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IRGP30B120KD-E IR2112 AN990 7BR25SA120 design drive circuit of IGBT IR2112 application note AN-983a AN983A

TDA 7400 ic

Abstract: sn 7600 n Semiconductors Cross Reference List Diskette 3 1/2": SIPMOS-Halbleiter Typenvergleichsliste Diskette 3 1/2": SIPMOS Semiconductors Cross Reference List Themenschriften/Special-Subject Brochures Active Harmonic , SIPMOS-Halbleiter/SIPMOS Semiconductors Power Modules SIMOPAC/IGBT Datenblätter/Data Sheets Smart SIPMOS - TEMPFET and PROFET IGBT Power Transistors Produktschriften/Product Information SIPMOS-Kleinsignaltransistoren SIPMOS Small-Signal Transistors Smart SIPMOS - TEMPFET and PROFET Leistungshalbleiter, SIPMOS und IGBT
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B152-B6294-X-X-7400 TDA 7400 ic sn 7600 n SLE4520 4918 BUP 312 TDA4919

PS2501 optocoupler

Abstract: nec PS2561 alternatives to Agilent available (Request Cross Reference) 1 Mbps PS9613 Power Supply to 35 V 10 , to Agilent available (see Cross Reference) High CMRR SOP5 PS8802-1 PS8802-2 (Dual , : · High Speed Line Voltage Rectifier Filter IGBT Switch Matrix Motor · High Isolation · High CMRR IGBT Drivers · Wide Supply Range Phase/Current Isolation NEC High , , SSOP package Ideal for IGBT/IPM Driver PS9634 2A max current Quad optocoupler in a
California Eastern Laboratories
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PS9117 PS2761 PS8741 PS2501 optocoupler nec PS2561 nec optocoupler ps2501 2A Optocouplers analog optocoupler nec optocoupler AN3001 RS422 PS9817-1 PS9817-2 PS9113 PS9617

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 , HALF BRIDGE 600 400 GP350MHB06S 3/5 www.dynexsemi.com IGBT Module Cross Reference , 108x62 HALF BRIDGE 1700 150 DIM200MHS17 1/5 www.dynexsemi.com IGBT Module Cross Reference BSM200GB170DL EUPEC 108x62 HALF BRIDGE 1700 200 DIM200MHS17 BSM200GB170DLC , 108 x62 SINGLE 1200 300 DIM400LSS12 2/5 www.dynexsemi.com IGBT Module Cross
Dynex
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FZ1600R12KF4 FZ800R12KF4 BSM300GB60DLC 2MBI 200NB-120 IGBT Eupec MG200J2YS50 mitsubishi 150Ne120 MG400Q1US41 igbt mitsubishi FZ800R16KF4 FZ1200R33KF2 DIM1200ESM33 DIM1600FSM12 FF400R12KF4 140X130

IGBT cross reference semikron eupec

Abstract: 150Ne120 IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 , HALF BRIDGE 600 400 GP350MHB06S 3/5 www.dynexsemi.com IGBT Module Cross Reference , 108x62 HALF BRIDGE 1700 150 DIM200MHS17 1/5 www.dynexsemi.com IGBT Module Cross Reference BSM200GB170DL EUPEC 108x62 HALF BRIDGE 1700 200 DIM200MHS17 BSM200GB170DLC , 108 x62 SINGLE 1200 300 DIM400LSS12 2/5 www.dynexsemi.com IGBT Module Cross
Dynex
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Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 eupec igbt FF600R17KF6B2 MBM200GS12 MG200Q2YS40 fuji igbt technical data DIM400DDM12 FF600R12KF4 DIM800DDM12 FF80012KF4 DIM800FSM12 BSM400GA120DN2
Abstract: equivalents. The cross reference is shown below. Vincotech GmbH Biberger StraÃe 93 82008 Unterhaching , Power Modules New MiniSKiiP® Modules with Mitsubishiâ'™s Latest IGBT 6.1 Product name  , ® PACK 3 power modules featuring Mitsubishi IGBT 6.1 versions covering 50 A to 150 A for 1200 V. MiniSKiiP® 3 power modules equipped with Mitsubishi IGBT 6.1 technology are an excellent first choice for , with IGBT 6.1 Main features Designed mainly for 20-to-70 kW drive applications, the new MiniSKiiP Vincotech
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V23990-K428-A60-PM 35NAB12T4V1 V23990-K429-A60-PM V23990-K420-A60-PM 37NAB12T4V1 38NAB12T4V1

IGBT cross-reference

Abstract: AN9006 - Discrete, IGBT SEARCH | Parametric | Cross Reference space Fairchild Semiconductor space space , Rev. H3 file:///C|/PDF/SGR20N40L.html SEARCH | Parametric | Cross Reference space Fairchild , SGR20N40L / SGU20N40L August 2001 IGBT SGR20N40L / SGU20N40L General Description Insulated , Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test , semiconductor. The datasheet is printed for reference information only. Preliminary No Identification
Fairchild Semiconductor
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IGBT cross-reference AN9006 SGR20N40LTF IGBT application note IGBT Pspice SGU20N40LTU AN-9006

dc servo igbt diagram

Abstract: high side current mirror sensing Electric for high power IGBT modules. Figure 3 compares the cross sections of a third generation IPM to a , ) drives that commonly make up multi-axis servo systems. Fourth generation 1µm planar IGBT chips are , impedance required in demanding servo drive applications. The IGBT and free-wheel diode power chips are , Control Board Case Al Wire Cu Base plate IGBT FWDi PCB Material DBC Ceramic Substrate PCB Material Control Boards Interconnect Terminal Case Al Wire IGBT FWDi DBC Ceramic
Powerex
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9DB-200 dc servo igbt diagram high side current mirror sensing ac motor speed control circuit diagram with IGBT DC MOTOR SPEED CONTROL USING IGBT 2 anode igbt inverter circuit diagram PM100CBS060

1kw single phase IGBT inverter CIRCUIT

Abstract: FIBREBOARD New Re-Configurable IGBT Package Based on a Standard Platform by John Donlon*, Eric Motto , Corporation, Fukuoka, Japan Abstract A new wide range of IGBT modules has been developed with a new , IGBT chip technology and RoHS compatible lead free solder. The highest power cycling capability is , ceramic substrate, a module cover, and a test jig. For the case of custom IGBT module development, new , . New Re-Configurable IGBT Package Based on a Standard Platform by John Donlon, Eric Motto, Manabu
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1kw single phase IGBT inverter CIRCUIT FIBREBOARD CSTBT igbt IGBT parallel power cycling eric motto igbt module testing

single phase inverter IGBT

Abstract: Single Phase to Three Phase Converter WB 600 T MH M I AA 10 W WB WE WF WD 600 Cross Reference List IXYS Eupec Fuji Module , VOLTS AVAILABLE IN LATEST NPT AND TRENCH IGBT TECHNOLOGIES Overview: IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond (DCB) module packaging technology, located in Lampertheim, Germany has extended its portfolio of IGBT modules down in size to cover the low power segment of the market The new IGBT MiniPack 2 Module is
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OCR Scan
MITB15WB1200TMH FB10R06KL4G FB15R06KL4 FP10R12YT3 FP15R12YT3 FP10R12KE3 single phase inverter IGBT Single Phase to Three Phase Converter 3 phase igbt INVERTER ac motor eupec FB15R06KL4 single phase to 3 phase inverter AC inverter igbt circuit diagrams MIAA10WD600TMH

M63914FP

Abstract: M81012FP conventional AC/DC converter, and high speed switching elements IGBT in one package, which contributes to a , Loss DIP-PFC employs the low loss IGBT and Diode chips. The total power loss is reduced by about 10 , Mold Resin Heat Sink LVIC Di, IGBT Fig. Cross-Section diagram of DIP-PFC 1.3.2 Internal , rectifier bridge and two IGBT elements parallel connected to the negative-side of the diode bridge, and an , : Converting commercial single phase AC input into DC output. (b) IGBT drive and protection: The built-in LVIC
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M63914FP M81012FP M63914 0.22UF-630V PS51277-A PS51259-A DPH-2635

PS22A76

Abstract: PS22A74 to avoid the need for an excessively large current sensing resistor the new DIP uses IGBT chips , cross sections of this new package compared to the previous large DIP-IPM is shown in fig.1. The , encapsulated. This is where the packages differ. A cross section of the previous generation 3 Large DIP-IPM is shown in fig.1A. In Cu frame FWDi ,IGBT Al wire IC Au wire I. INTRODUCTION The , Molded resin FWDi, IGBT IC Insulated resin sheet Au wire Cu frame Al heat spreader B
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PS22A76 PS22A74 DIP-IPM POWEREX DIP-IPM ps21a79 resin compound to247

PS21213

Abstract: PS21214 an optimized trench gate IGBT with a custom control IC to provide boost type power factor correction , mainly on discrete copackaged (containing both IGBT and free wheel diode) devices in TO-220 or TO , and a cross section diagram is shown in Figure 2. Low cost is achieved by assembling bare power , HVIC Au Bond Wire cost and manufacturing time by eliminating IGBT, FWDi the need for separate , utilize TO-247 type discrete devices. Figure 2: DIP-IPM Package Cross Section Unfortunately, the DIP-IPM
Powerex
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PS21213 PS21214 200w dc to ac inverter Circuit diagram PS21202 MINI DIP-IPM pwm pam INVERTER
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