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Part Manufacturer Description PDF Samples Ordering
HGT1S20N60C3S9A Fairchild Semiconductor Corporation 45A, 600V, UFS Series N-Channel IGBT, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL ri BuyFREE Buy
HGTG11N120CN Fairchild Semiconductor Corporation 43A, 1200V, NPT Series N-Channel IGBT, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 300/RAIL ri BuyFREE Buy
HGTG12N60C3D Fairchild Semiconductor Corporation 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 300/RAIL ri BuyFREE Buy

IGBT D-Series

Catalog Datasheet Type PDF Document Tags
Abstract: SCSOA NPT IGBT D-Series Contents IGBT VCES IC max VCE(sat) TO-263 max , ® IXDN 55N120 55N120 ® IXDN 75N120 75N120 B4 - 6 B4 - 10 B4 - 14 B4 - 18 B4 - 22 ® New product IGBT with , High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G TO-220 AB , , VCE = 400 V, TJ = 125°C RG = 100 , non repetitive 10 µs PC TC = 25°C q q NPT IGBT , IC90 G = Gate, C = Collector , q q q q q q q Advantages q q IGBT Diode 140 ... Original

25 pages,
428.95 Kb

20N120 75N120 E153432 35N60 IXDH20N120AU1 ixys ixdh 20n120 55N120 20N60B 30N120 20n60 IGBT D-Series STO-227 ixdn75n120 diode B4 datasheet abstract
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Abstract: OIXYS SCSOA IGBTS-Series / D-Series Insulated Gate Bipolar Transistors (IGBT) IGBT with Fast Diode Short Circuit Current Rated ... OCR Scan

1 pages,
71.34 Kb

Insulated Gate Bipolar Transistors datasheet abstract
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Abstract: MOSFETs. Advantages to the user: · rugged, short-circuit-proof device (S-series, D-series and E-series) · , Insulated Gate Bipolar Transistors (IGBT) The IGBT is a combination of bipolar and MOS , switching losses · compact equipment design · high efficiency The IGBT is suitable for numerous applications , utilize newly developed IGBT chips capable of withstanding up to 10 us in short-circuit, even with a 15 , reverse recovery charge (Qrr). These same diodes are also available as separate elements for use in IGBT ... OCR Scan

1 pages,
60.67 Kb

diode 12A3 datasheet abstract
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Abstract: B1 - 2 © 1998 IXYS All rights reserved XYS IGBT with Fast Diode VC 6S V 600 SCSOAIGBT S-Serles / D-Series Contents 'c Tc = 25 "C A 20 48 50 90 V CEfsal) max Tc=25°C V 3.0 2.2 2.5 2.5 , XYS IGBT v C ES max V 600 T0-220 T0-220 V * CEIsatl (IXGP) max Tc = 25 °C Tc = 25 "C c A 16 16 48 50 75 ® V 1.8 1.8 2.2 2.5 2.5 3.5 2.7 3.0 2.7 3.0 3.0 2.5 3.0 4.0 3.5 | 4.0 SCSOAIGBT S-Serles / D-Sertee Contents TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 T0-204 miniBLOC Page * B1-8 B1-8 IXSH ... OCR Scan

2 pages,
129.29 Kb

35N120AU1 B1114 B126 30N60 220 B156 15N120A IXSH 35N120AU1 B1116 B156 diode 30N60A IXYS 30N60 55N120AU1 B1108 D B1112 16N60 T0-220 T0-220 abstract
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Abstract: , short-circuit-proof device (S-series, D-series and E-series) ·operation without protective snubber networks , IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables , MOSFET Discreets RF Power MOSFETs IGBT Discreets >>> IGBT Modules Ultra Fast Rectifiers Silicon , E D R I V E R S MOSFET and IGBT Gate Drivers RF Power MOSFETs PWM Controllers FUNCTIONAL , IGBT Product Overview I II III IV IV V IXYS IGBTs Insulated Gate Bipolar ... Original

32 pages,
5807.21 Kb

10KV SiC 10kv IGCT MUBW 30-12E6K MITA15WB1200TMH ixys vuo 52 input id 28-kV dp 630 ixys snubber IGCT how to switch IGBT ssr 75-17T8 72-16no1 30-12E6K IGCT 4.5kv datasheet abstract
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Abstract: EconoPACKTM + 2.10 EconoPACKTM + D-Series 2.11 EconoDUALTM2.12 Outlines2.14 Package Units 2.21 Links2.22 IGBT , Modules EconoPACKTM + D-Series 1200 VCES Type VCES V IC A VCEsat V Tvj= 25°C typ. 225 300 450 1,75 1,75 , , on our website, these links are active. IGBT High Power Wir bieten , vehicles), power supplies, welding applications, to medical equipment. IGBT Medium Power Das, was , manufacturing. IGBT Low Power Hochleistungshalbleiter für Ihre Industrieanwendungen High power ... Original

182 pages,
44266.94 Kb

FF450R07ME4 FS500R17OE4D bt 1690 scr FS450R12OE4P Eupec thyristors catalog F4-50R07W2H3 FF150R12RT4 Dz800S17ke3 F3L300R12PT4 FP06R12W1T4 F3L400R12PT4 FS300R12OE4P datasheet abstract
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Abstract: Computing Q2SD DAB DAB - RF Power MOS FET Intelligent MOS FET IGBT - 4 5 6 8 10 11 12 14 15 , W h y c h oose SuperH CPU H it ac h i ? Debug I/F IGBT Serial I/F Po w e r t r ai , Flashmemory · Leading technology, excellent battery products, clear roadmap IGBT FPU IGBT IGBT , structure and are generally Capability known as D-Series. c omm itm e n t Now Hitachi introduces , e m s Hitachi has developed IGBT technology S pecif ication for several years to meet the ... Original

21 pages,
717.52 Kb

smd code EB6 SH7709 SH7490 SH1 SuperH QFP256 Package QFP256 powertrain controller IGBT D-Series kb 115b hd video downconverter hitachi sh4 Hitachi audio mosfet application hitachi mosfet audio nissei capacitors datasheet abstract
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Abstract: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors (IGBT) IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V TO-220 (IXSP , © 1999 IXYS All rights reserved B1 - 2 © 1999 IXYS All rights reserved SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES IC VCE(sat) max TC = 25 °C V TO-247 (IXSH , IGBT with Diode "S" Series Improved SCSOA Capability Symbol Test Conditions Maximum Ratings ... Original

127 pages,
2208.58 Kb

ixsk 35N120U1 40n60 24N60 igbt 30N60 mos 30N60 30n60* 227 ixsh24n60au1 mj 340 30n60 equivalent 80n60 16N60 ixsn 35N120U1 30n60 to-220 40n60 equivalent datasheet abstract
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Datasheet Content (non pdf)

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Over 1.1 million files (1986-2015): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
No abstract text available (PMOSTEXT.DOC)
Hitachi 25/10/2000 79.32 Kb ZIP
*- * Library of insulated gate bipolar transistor (IGBT) model parameters * * The parameters in
Spice Models 20/12/2001 295.35 Kb LIB eval.lib