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IGBT D-Series

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SCSOA NPT IGBT D-Series Contents IGBT VCES IC max VCE(sat) TO-263 max TO , ® IXDN 55N120 ® IXDN 75N120 B4 - 6 B4 - 10 B4 - 14 B4 - 18 B4 - 22 ® New product IGBT with , High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G TO-220 AB , , VCE = 400 V, TJ = 125°C RG = 100 , non repetitive 10 us PC TC = 25°C q q NPT IGBT , IC90 G = Gate, C = Collector , q q q q q q q Advantages q q IGBT Diode 140 IXYS
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STO-227 35N60 20N120 30N120 20N60B diode B4 ixdn75n120 20n60 30N120D1 20N60
Abstract: OIXYS SCSOA IGBTS-Series / D-Series Insulated Gate Bipolar Transistors (IGBT) IGBT with Fast Diode Short Circuit Current Rated -
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Insulated Gate Bipolar Transistors
Abstract: Insulated Gate Bipolar Transistors (IGBT) The IGBT is a combination of bipolar and MOS , switching losses · compact equipment design · high efficiency The IGBT is suitable for numerous applications , utilize newly developed IGBT chips capable of withstanding up to 10 us in short-circuit, even with a 15 , reverse recovery charge (Qrr). These same diodes are also available as separate elements for use in IGBT circuits or any other application requiring high diode switching speeds. The IGBT modules use Direct Copper -
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diode 12A3
Abstract: Zener Diode 2.4 IGBT Circuit Schematics 2.5 IGBT Discrete Range 2.6 IGBT Module Range with Soft and Fast Wheeling Diodes 2.7 New Third Generation IGBT: S-Serics 2.7.1 S-Series IGBT Product Range , 24 3. Driver IC for IGBT (HTK0030) 26 4. Power Bipolar Transistors 4.1 Introduction , Insulated Gate Bipolar Transistor, IGBT, provides high speed and voltage drive characteristics of the power MOSFET along with low on-state voltage of the bipolar power transistor. This new IGBT is -
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2sk1058 equivalent MBM300BS6 2SK1270 Hitachi MOSFET 2SC297 hitachi mosfet lateral 2SC4746A 2SC4897 GN17020E 2SC4877 2SC4789 2SC3652
Abstract: XYS IGBT v C ES max V 600 T0-220 V * CEIsatl (IXGP) max Tc = 25 °C Tc = 25 "C c A 16 16 48 50 75 ® V 1.8 1.8 2.2 2.5 2.5 3.5 2.7 3.0 2.7 3.0 3.0 2.5 3.0 4.0 3.5 | 4.0 SCSOAIGBT S-Serles / D-Sertee Contents TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page * B1-8 B1-8 IXSH 24N60 iXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSH 24N60A IXSH 30N60A IXSH 40N60A , Product B1 - 2 © 1998 IXYS All rights reserved XYS IGBT with Fast Diode VC 6S V 600 -
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16N60 35N120AU1 55N120AU1 b14 smd diode B1108 DIODE SMD b14 smd diode B1100 B1106 50N60B/ 80N60A 25N100A 35N100A 10N120A 15N120A
Abstract: digital circuits, ordinary low frequency analog circuits and IGBT power device driven circuits, etc Mega Electronics
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M2WF0503S/D M2WF0512S/D M2WF0515S/D M2WF1205S/D M2WF0505S/D M2WF0509S/D
Abstract: IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables , MOSFET Discreets RF Power MOSFETs IGBT Discreets >>> IGBT Modules Ultra Fast Rectifiers Silicon , E D R I V E R S MOSFET and IGBT Gate Drivers RF Power MOSFETs PWM Controllers FUNCTIONAL , IGBT Product Overview I II III IV IV V IXYS IGBTs Insulated Gate Bipolar Transistor Modules IGBT Modules - CBI Modules - Sixpack Configurations - Full Bridge - IXYS ISOPLUS IXYS
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transistor x112 WESTCODE catalog 100-12E8 IGBT ac switch in SSR 2-IAO-QMC-01001 IGCT 4.5kv D-68623 N1016
Abstract: , on our website www.infineon.com/highpower, these links are active. IGBT High Power Wir bieten , vehicles), power supplies, welding applications, to medical equipment. IGBT Medium Power Das, was , manufacturing. IGBT Low Power Hochleistungshalbleiter für Ihre Industrieanwendungen High power , CAV Solar UPS Induction Welding V IGBT Medium Power IGBT Low Power Content IntroductionIII LegendV IGBT Modules - Low Power 1.1 PrimePACKTM3.3 IHM Modules 3.4 IHV Modules 3.6 Diode Modules Infineon Technologies
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FS300R12OE4P FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr Dz800S17ke3 B133-H9378-G3-X-7600
Abstract: Scalable power supply IGBT + FRD 2 HDD/ODD/DSC Motor driver゙ ゙ Triac, Thyristor 3 , Bluetooth IGBT, Power MOS, AFE Chassis Infotainment Steering /EPS Brake/ABS Suspensions , Automotive applications Renesas PowerMOSFET, IPD, IGBT providing High Performance and High Reliability , 100 IGBT 10 1 40 HID: High Intensity Discharge lamp 32 60 100 400 600 1200 Drain to Renesas Electronics
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rjh60d7bdpq PAE-AA-12-0177-1 PAE-AA-12-0049-1
Abstract: Computing Q2SD DAB DAB - RF Power MOS FET Intelligent MOS FET IGBT - 4 5 6 8 10 11 12 14 15 , W h y c h oose SuperH CPU H it ac h i ? Debug I/F IGBT Serial I/F Po w e r t r ai , Flashmemory · Leading technology, excellent battery products, clear roadmap IGBT FPU IGBT IGBT , Hitachi has developed IGBT technology S pecif ication for several years to meet the harsh E x am ple environment in automotive applications. More products are available with IGBT product Hitachi
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SH7055F eb5 SMD hd155080tf smd code eb5 SH7051 eb6 smd transistor Hitachi audio mosfet application H8S/2623 SH7709 D-85622 F-78140 S-16421
Abstract: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors (IGBT) IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V TO-220 (IXSP , dimensions. © 1999 IXYS All rights reserved B1 - 2 © 1999 IXYS All rights reserved SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES IC VCE(sat) max TC = 25 °C V TO-247 (IXSH , rights reserved B1 - 3 IXSH 10N60AU1 VCES = 600 V = 20 A IC25 VCE(sat)typ = 3.0 V IGBT with IXYS
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40n60 igbt 35N120u1 B1116 40n60 equivalent equivalent for 30n60 30n60 equivalent B1-10 B1-12 B1-20 B1-40 B1-76 B1-84
Abstract: ƒ« MOSFET MODULES 6 IGBTモã'¸ãƒ¥ãƒ¼ãƒ« IGBT MODULES 7 ãƒ'ワーã'¤ãƒ³ãƒã'°ãƒ¬ãƒ¼ãƒãƒƒãƒ‰ãƒ¢ã'¸ãƒ¥ãƒ¼ã , THREE-PHASE INDUCTION MOTOR 3 電å›èª¿æ•´å™¨ POWER CONTROL UNIT 4 IGBTã'¤ãƒ³ãƒãƒ¼ã'¿ IGBT INVERTER UNIT , モã'¸ãƒ¥ãƒ¼ãƒ« 4. IGBT DISCRETE 規定のã'²ãƒ¼ãƒé›»å§ã''å°å ã—て,規定だ, INDEX Series DISCRETE 6 IGBT モã'¸ãƒ¥ãƒ¼ãƒ«ï¼ãã®ï¼') â'ƒIGBT MODULES PCHMB400B12 12 記号とç"¨èªž 製å"æ—©è¦'表 製å"æ—©è¦'表â'ƒQUICK REFERENCE 6 IGBT Nihon Inter Electronics
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10ERB20 508RP d2n202le D2W220CD FCH10U15 13F-2
Abstract: ƒ« MOSFET MODULES 6 IGBTモã'¸ãƒ¥ãƒ¼ãƒ« IGBT MODULES 7 ãƒ'ワーã'¤ãƒ³ãƒã'°ãƒ¬ãƒ¼ãƒãƒƒãƒ‰ãƒ¢ã'¸ãƒ¥ãƒ¼ã , THREE-PHASE INDUCTION MOTOR 3 電å›èª¿æ•´å™¨ POWER CONTROL UNIT 4 IGBTã'¤ãƒ³ãƒãƒ¼ã'¿ IGBT INVERTER UNIT , モã'¸ãƒ¥ãƒ¼ãƒ« 4. IGBT DISCRETE 規定のã'²ãƒ¼ãƒé›»å§ã''å°å ã—て,規定だ, ›³ Circuit TYPE NUMBER INDEX Series DISCRETE 6 IGBT モã'¸ãƒ¥ãƒ¼ãƒ«ï¼ãã®ï¼') â'ƒIGBT , —©è¦'表â'ƒQUICK REFERENCE 6 IGBT モã'¸ãƒ¥ãƒ¼ãƒ«ï¼ãã®ï¼') â'ƒIGBT MODULES (Continued) Series Circuit Nihon Inter Electronics
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300MCB d2n203le FCHS20A PT76S16
Abstract: ƒ« MOSFET MODULES 6 IGBTモã'¸ãƒ¥ãƒ¼ãƒ« IGBT MODULES 7 ãƒ'ワーã'¤ãƒ³ãƒã'°ãƒ¬ãƒ¼ãƒãƒƒãƒ‰ãƒ¢ã'¸ãƒ¥ãƒ¼ã , THREE-PHASE INDUCTION MOTOR 3 電å›èª¿æ•´å™¨ POWER CONTROL UNIT 4 IGBTã'¤ãƒ³ãƒãƒ¼ã'¿ IGBT INVERTER UNIT , モã'¸ãƒ¥ãƒ¼ãƒ« 4. IGBT DISCRETE 規定のã'²ãƒ¼ãƒé›»å§ã''å°å ã—て,規定だ, DISCRETE 6 IGBT モã'¸ãƒ¥ãƒ¼ãƒ«ï¼ãã®ï¼') â'ƒIGBT MODULES PCHMB400B12 12 記号とç"¨èªž 製å"æ—©è¦'表 製å"æ—©è¦'表â'ƒQUICK REFERENCE 6 IGBT モã'¸ãƒ¥ãƒ¼ãƒ«ï¼ãã®ï¼') â'ƒIGBT Nihon Inter Electronics
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FCGS20A12 EC10QS04 TE12L FCHS10A12
Abstract: 50 200 3.0 5.0 200 TO-3P 2SK1170 2SK1837 IGBT TO-3P TO-3P Notes: 1. IGBT; VCE(sat) (V) 2. IGBT; t, (ns) Typ 32 GN6020C 600 GN12015 C 1200 ±20  -
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2SK1058 MOSFET APPLICATION NOTES sk 100 gale 065 tf APC UPS es 500 CIRCUIT DIAGRAM PF0144 General Instrument data book ESI 252 impedance meter ADE-408 50502C