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Part Manufacturer Description Datasheet BUY
LT3585EDDB-0#PBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3485EDD-3#TRPBF Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3585EDDB-3#TRPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3585EDDB-3 Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3585EDDB-1#TRMPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3485EDD-1#TR Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

IGBT PNP

Catalog Datasheet MFG & Type PDF Document Tags

IR igbt gate driver ic

Abstract: IGBT PNP ) Device Symbol (c) EQUIVALENT CIRCUIT IGBT MOSFET 3 IGBT N PNP IRIGBT , + P 1.MOSFET P N- IGBT 2.PNP MOSFET P N- IR " MOSFET N- MOSFET"IGBT MOSFET 500V 70 IGBT N MOSFET PNP , MOSFET MOSFET IGBT MOSFET MOSFET 12,13 PNP PNP MOSFET PNP 2 I G B T H E X F E T (IRG4BC40SIRG4BC40W IRF840LC) PNP IGBT HEXFET 500V600V
International Rectifier
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IR igbt gate driver ic IGBT PNP 5A IGBT driver IC igbt 100V 5A mosfet ir 250 n irf 944 AN-983AJ AN-990AJ IRGBC20U 1500C 160KH AN-937A

rectifier pwm igbt

Abstract: igbt 1 2 PNP 1 N+ 3 600V MOSFET Qrrtrr 2 on IGBT , IGBT 1 PNP FET HEXFET MOSFET MOSFET (IGBT ) PNP , )322-3331 AN-980J IGBT HEXFET MOSFET (HEXTFET ) by Ajit Dubhashi, Brian Pelly 3 PWM 20 50kHz IGBT IGBT HEXFET MOSFET 3 220VPWM MOSFET IGBT MOSFET
International Rectifier
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rectifier pwm igbt igbt mosfet 5a mosfet 12A 600V Pelly hexpak igbt AN-964

IGBT PNP

Abstract: CPH5516 CPH5516 No. N A 0 1 9 6 N CPH5516 PNP / NPN , , , IGBT PNP NPN 1 2 , ( 0.9mm) () PNP Absolute Maximum Ratings / Ta=25 VCBO VCEO VEBO , ns ns unit : mm 7017-009 5 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP , 0.6 4 3 0.15 0.4 5 4 1 2 0.95 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) 0.7 0.9 0.2 2.9 SANYO
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33106EA TB-00002176 A0196-1/5 IT08916 IT08918 IT08920

CPH5524

Abstract: IGBT PNP CPH5524 No. N A 0 8 5 9 N CPH5524 PNP / NPN , , , IGBT PNP NPN 1 2 , ( 0.9mm) () PNP Absolute Maximum Ratings / Ta=25 VCBO VCEO VEBO IC , : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) 2 , unit typ max (- 115) (- 230) mV 90 130 mV 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) SANYO : CPH5 IB1 PW=20s D.C.1% INPUT
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92607EA TC-00000913 A0859-1/5 IT04573 IT04575 IT04572

calculation of IGBT snubber

Abstract: RCD snubber collector-to-emitter on-state voltage and becomes completely saturated. This is because the IGBT pnp transistor portion , Application Note 9020 April, 2002 IGBT Basic II By K.J Um CONTENTS Section I. Gate drive considerations 1. Introductions 2. Gate Drive Considerations 3. IGBT switching waveforms A. Analysis of , pattern e. Common emitter problems 5. Conclusion 1 Rev. A, April 2002 Section II - IGBT Protections 1. Introduction - IGBT Failure Mechanism 2. FBSOA and Short Circuit Destruction A. FBSOA 3
Fairchild Semiconductor
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calculation of IGBT snubber RCD snubber P-Channel IGBT arc welder inverter spot welder circuit diagram full bridge arc welder

P-Channel IGBT

Abstract: PTIGBT 600V 10A + buffer junction (J1). This reduces the current gain of the PNP transistor. As such, an IGBT with an , - ( V GE ­ V th ) ( 1 ­ PNP ) L CH The IGBT's saturated collector current and transconductance , Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction , . 4-3. Electrical Characteristics of IGBT , . The IGBT developed in the early 1980s has the combined advantages of the above two devices. It has a
Fairchild Semiconductor
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PTIGBT 600V 10A RUF resistor mosfet 8A 900V TO-220 N-Channel jfet 100V depletion vtom vertical pnp bjt

mosfet

Abstract: cmos 555 2 NPN PNP CMOS 3a IC IR2151 IR2152 IC PNPN SCR VBE IR2151 IR2152 Page2 DESIGN TIPS IC MOSFET/IGBT AC 4 MOSFET/ IGBT dV/dtIC LO C O M VOUT PNP VCC 1 IC COM MOSFET/IGBT 3a IC MOSFET/ IGBT Lp *diL/dt IC I C COM MOSFET/IGBT MOSFET/IGBT HO Vs 3b PC Lp * diL/dt , MN1 IR2151 IR2152 500 mA NPN PNP CMOS ESD 12 V PNPN 2 500 mA
International Rectifier
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mosfet cmos 555 mosfet vs SCR ic 555 st mosfet PNPN 94-9AJ 1IR2151

IGBT2

Abstract: hitachi transistor igbt E 1-4IGBT IGBT 1.2 IGBT MOSFET(n ) MOSFET N-N IGBT P-N P+ pnp N N , IGBT 1.3 npn pnp IGBT FWD IGBT (MOS) 1.3 1-5-2IGBT IGBT 1.4 MOSFET MOSFET pnp pnp IGBT MOSFET pnp IGBT IGBT MOSFET pnp , NO.IGBT-HI-00002 R2 ( IGBT ) 2009.12 2009 HITACHI Ltd. IGBT
Hitachi Semiconductor
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IGBT2 hitachi transistor igbt GTO 100A 500V MBN1200E33E DIODE m7 dic 200a 300v mosfet UL94VO

INT-944

Abstract: AN983 of Figure 1, the IGBT consists of a PNP driven by an N-Channel MOSFET in a pseudoDarlington , from the same PNP in heavy saturation. It should be noted, however, that the emitter of an IGBT covers , speed of an IGBT is the lifetime of the minority carriers in the N- epi, i.e., the base of the PNP , made of four alternate P-N-P-N layers. Given the necessary conditions (NPN + PNP > 1) the IGBT could , Index AN-983 (v.Int) IGBT Characteristics (HEXFET® is a trademark of International Rectifier
International Rectifier
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INT-990 INT-944 AN983 IRF 949 IRGPC50U INT990 C50U 1000C

AN-983

Abstract: AN983 of Figure 1, the IGBT consists of a PNP driven by an N-Channel MOSFET in a pseudoDarlington , from the same PNP in heavy saturation. It should be noted, however, that the emitter of an IGBT covers , speed of an IGBT is the lifetime of the minority carriers in the N- epi, i.e., the base of the PNP , P-N-P-N layers. Given the necessary conditions (NPN + PNP > 1) the IGBT could latch-up like a thyristor , Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET
International Rectifier
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PN channel MOSFET 10A IRF840 complementary equivalent irf840 transistor npn high speed switching 5A 600v BUX98 IRF840

INT-944

Abstract: Equivalent transistors for IRGPC50U of Figure 1, the IGBT consists of a PNP driven by an N-Channel MOSFET in a pseudoDarlington , from the same PNP in heavy saturation. It should be noted, however, that the emitter of an IGBT covers , speed of an IGBT is the lifetime of the minority carriers in the N- epi, i.e., the base of the PNP , P-N-P-N layers. Given the necessary conditions (NPN + PNP > 1) the IGBT could latch-up like a thyristor , Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET
International Rectifier
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Equivalent transistors for IRGPC50U IRGBC40S IRGBC40U irf 300V IRGp thyristor rectifier 600v 100a 1250C

INT-944

Abstract: Equivalent transistors for IRGPC50U of Figure 1, the IGBT consists of a PNP driven by an N-Channel MOSFET in a pseudoDarlington , from the same PNP in heavy saturation. It should be noted, however, that the emitter of an IGBT covers , speed of an IGBT is the lifetime of the minority carriers in the N- epi, i.e., the base of the PNP , P-N-P-N layers. Given the necessary conditions (NPN + PNP > 1) the IGBT could latch-up like a thyristor , AN-983 (v.Int) IGBT Characteristics (HEXFET® is a trademark of International Rectifier
International Rectifier
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all transistor IRF 310 irgbc20u Similar NPN Transistor 600V 5A TO-220 conductivity meter circuit 10a 400v power amplifier bipolar transistor 7A, 100v fast recovery diode

TOSHIBA IGBT

Abstract: RCA 4136 MPS-U60 PNP, 300 V2 GT20D101-Y N-CHAN IGBT 250 V, 20 A (Toshiba) GT20D201-Y P-CHAN IGBT 250 V, 20 A , ) MOS-IGBT AB CC1 CC2 1 A IGBT IGBT IGBT 1 20 MHz 1 2 A RT 1 (2) (3) CC12 CC1 CC2 RINV (1) NPN PNP , R 11 (1) 2 A 2 A1 A2 IBIAS DC (4) (5) A2 NPN PNP 3 B 2 IC 17 2 Toshiba IGBT MOSFET MOS MOSFET N P MOSFET IGBT P 250 V20 A IGBT ±20 V
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2N3904 SSM-2131P TOSHIBA IGBT RCA 4136 Audio Power Amplifier MOSFET TOSHIBA SSM2131P SSM2131 Helitrim AN-211 2N5551 2N5401 2N3906 VNEC2SC2682

pnp transistor 800v

Abstract: current is supplied to the PNP transistor, and 6.3. IGBT The IGBT (Insulated Gate Bipolar Transis , determ ined by the am ount o f extrinsic 90 Base G lass is N+-N~, the IGBT chip base is N'+- P +. Thus all m anufacturing steps are the same for the MOS FET and the IGBT w ith the exception o f the chip base. Figure 9 shows the equivalent circuit and the sym bol for the IGBT. Fig. 7 , Basic IGBT Design j f y ) E f i -, > - = > o U » L ·1 1 .J
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OCR Scan
pnp transistor 800v

An Introduction to IGBT Operation

Abstract: AN4503 loop gain of the PNP and NPN transistors combination is greater than one, then the IGBT will latch on , AN4503 Application Note AN4503 An Introduction To IGBT Operation Application Note Replaces , designer. 1. IGBT STRUCTURES All IGBTs on the market have either a punch-through structure (PT) or , and NPT IGBT structures. In practice an IGBT chip consists of many such elements connected in parallel. The NPT structure is the most basic one for an IGBT. It consists of a four layer sandwich of
Dynex
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AN4503-4 An Introduction to IGBT Operation IGBT EQUIVALENT mosfet 1500v static characteristics of mosfet and igbt n mosfet depletion

IXAN0063

Abstract: IGBT THEORY AND APPLICATIONS Insulated Gate Bipolar Transistor (IGBT) Basics Abdus Sattar, IXYS Corporation IXAN0063 1 , intended to give the reader a thorough background on the device technology behind IXYS IGBTs. IGBT Fundamentals The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS , make use of the advantages of both Power MOSFET and BJT, the IGBT has been introduced. It's a
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IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT transistor igbt Mohan power electronics converters applications a BJT safe operating area 2001I

Gate Drive Considerations for Maximum IGBT Efficiency

Abstract: SCHEMATIC transformer drive IGBT AN4507 Application Note AN4507 Gate Drive Considerations For Maximum IGBT Efficiency , considerations that should be taken into account when designing a gate drive circuit for an IGBT, and gives , should be considered:1) Conduction Losses 2) IGBT Switching Losses 3) Anti Parallel Diode Switching Losses 4) Device Protection 1.2 IGBT SWITCHING LOSSES When turning an IGBT on or off the switching , ) Circuit Layout Rg 1.1 CONDUCTION LOSSES When an IGBT is turned on the collector emitter voltage Vce
Dynex
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AN4507-3 Gate Drive Considerations for Maximum IGBT Efficiency SCHEMATIC transformer drive IGBT TURN ON AND TURN OFF CIRCUITS OF IGBT IGBT application note isolation gate drive transformer medical

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: Calculation of major IGBT operating parameters AN4504 Application Note AN4504 IGBT Ratings And Characteristics Application Note Replaces September 2000 version, AN4504-3.0 Load AN4504-3.1 July 2002 PNP VD applications this diode , the ratings parameters on a typical IGBT datasheet and describes how the current and power ratings , for a given case temperature (for example in the case of Dynex Semiconductor IGBT module datasheets, the case temperature is specified between the range of 70 to 85°C). G VGE Emitter Fig. 1 IGBT
Dynex
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the calculation of the power dissipation for the igbt and the inverse diode in circuits Calculation of major IGBT operating parameters AN4505 AN4506

ZXGD3004E6

Abstract: ZXGD3003E6 AN52 IGBT gate drive considerations in electronic lamp ballasts Yong Ang, Applications Engineer, Zetex Semiconductors The use of Zetex high speed non-inverting gate drivers for IGBT half-bridge , IGBT's gate drive for electronic ballast using bipolar transistors. The charge necessary to fully enhance an IGBT is a function of its Gate-Source and Drain-Gate (Miller) capacitances and is delivered via an external gate resistor. The gate charge and input capacitance value for an IGBT is lower
Zetex Semiconductors
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ZXGD3002E6 ZXGD3004E6 ZXGD3003E6 ZXGD3002 ZXGD3003 2A mosfet igbt driver stage D-81541

IGBT

Abstract: igbt subcircuit relationship between data book specifications and a new Insulated Gate Bipolar Transistor (IGBT) subcircuit SPICE model. Expanded IGBT Model Figure 2 shows the complete subcircuit. Table 1 shows the , to emulate different IGBT devices. The model accurately simulates, switching loses, nonlinear , component at a time: Q1 is a PNP transistor which functions as an emitterfollower to increase the current handling ability of the IGBT. BF (Forward Beta) is determined by the step in the turn-off tail which
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igbt subcircuit AN1043 Spice Model for TMOS Power MOSFETs igbt spice model igbt spice Spice Model for TMOS Power MOSFETs igbt testing
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