NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: TOSHIBA GT25Q101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25Q101 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf=0.5 , 2001-05-24 TOSHIBA GT25Q101 IC - VCE VCE - VGE 80 60 40 20 COMMON EMITTER Tc = 25°C , 0 40 80 120 160 200 GATE CHARGE QG (nC) 2 2001-05-24 TOSHIBA GT25Q101 switching time - iq , COLLECTOR-EMITTER VOLTAGE VQE (V) 3 2001-05-24 TOSHIBA GT25Q101 RESTRICTIONS ON PRODUCT USE _000707E 000707E • ... | OCR Scan |
4 pages, |
transistor gt25q101 GT25Q101 IGBT GT25q101 GT25Q101 abstract |
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| Abstract: TOSHIBA GT25Q101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25Q101 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf=0.5/^s (Max.) • Low Saturation Voltage : Vqe (sat)= 4.0V (Max.) • Enhancement-Mode MAXIMUM RATINGS (Ta = 25°C , GT25Q101 IC - VCE VCE - VGE 80 60 40 20 COMMON EMITTER Te = 25°C 20 Ta , ) 1997-02-03 2/3 TOSHIBA GT25Q101 switching time - iß switching time - rq 0.5 0.3 0.1 0.05 COMMON EMITTER Vcc = ... | OCR Scan |
3 pages, |
transistor gt25q101 IGBT GT25q101 GT25Q101 GT25Q101 abstract |
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| Abstract: TOSHIBA GT25Q101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25Q101 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf=0.5/^s (Max.) • Low Saturation Voltage : Vqe (sa^) = 4.0V (Max.) • Enhancement-Mode MAXIMUM RATINGS , to change without notice. 1997-02-03 1/3 TOSHIBA GT25Q101 IC - VCE VCE - VGE 80 60 40 20 , 80 120 160 200 GATE CHARGE QG (nC) 1997-02-03 2/3 TOSHIBA GT25Q101 switching time - iq ... | OCR Scan |
3 pages, |
GT25q101 IGBT GT25q101 GT25Q101 GT25Q101 abstract |
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| Abstract: ) 150 3 1200 V IGBT (PT ( 100 MG200Q1US51 MG200Q1US51 MG300Q1US51 MG300Q1US51 MG400Q1US51 MG400Q1US51 (19) (19) (19 , MG90V2YS40 MG90V2YS40 MG120V2YS40 MG120V2YS40 MG400V2YS60A MG400V2YS60A (4) (14) (14) (27) 3 15 [2] 5. IGBT , GT20G102 GT20G102 GT15G101 GT15G101 GT8G103 GT8G103 GT8G121 GT8G121 GT10G101 GT10G101 10 6 GT25Q101 GT25Q301 GT25Q301 GT15Q301 GT15Q301 GT15Q311 GT15Q311 , IGBT TO-P3 (LH) TO-P3 (N) TO-P3 (N) IS TO-P3 (SM) TO-220 (NIS) TO-220 FL/SM DP TO-220AB , [2] 5.2 IGBT (FRD ) VCES (V) IC (DC) (A) PC @Tc = 25°C (W) VCE (sat) (V ... | Original |
12 pages, |
MG50J2YS50 MG200Q1US41 MG150Q2YS50 GT25Q101 sm 170 220 GT8Q101 transistor mig50q7csa0x IGBT GT25J101 MG100J2YS50 GT60N321 MIG75Q7CSA0X MG75Q2YS50 MP6752 mg300j2ys50 MG800J2YS50A MG800J2YS50A abstract |
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| Abstract: MOSFET drain (N+ buffer). To avoid IGBT failure, the base of the PNP transistor is connected directly to , ET ct lle Co 3 2. IGBT Engineering Advances Power MOSFETs have long provided , high currents, are also associated with MOSFETs. The cross-section of the IGBT on the previous page shows how IGBT resistance is reduced by injecting holes into the N layer from the P+ substrate , '98 '99 Discrete IGBT Line-up IGBTs for industrial Inverters Collector-Emitter Voltage VCES ... | Original |
15 pages, |
GT8G101 S5783F igbt induction cooker gt50m101 500V N-Channel IGBT TO-3P transistor gt25q101 600V 20A N-Channel MOSFET TO-3P GT40T101 GT15N101 GT8Q101 Transistors Bipolar NPN TO-3P S5J25 GT60M101 datasheet abstract |
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| Abstract: 2010-3 IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 IGBT Insulated Gate Bipolar Transistor MOSFET IGBT IH PDP 1 2 3 4 - 5 IGBT N pnpn4 pnp p MOSFET n+ , M ET AL t ec ll 2 2 IGBT MOSFE T IGBTppnp 900VIGBT 900VIGBT IGBT p 900VIGBT 900VIGBT 2.8 GT60M323 GT60M323 VCE(sat)(V) @IC = 50 A ... | Original |
16 pages, |
GT50J101 GT45F124 mg60m1al1 GT45G124 GF30F123 gt30g123 IGBT GT30F123 IGBT GT30F124 GT45F128 GT45G122 gt30g124 GT30F125 gt45f123 gt30f122 datasheet abstract |
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| Abstract: 2010-3 IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 IGBT Insulated Gate Bipolar Transistor MOSFET IGBT IH PDP 1 2 3 4 - 5 IGBT N pnpn4 pnp p MOSFET n+ , M ET AL t ec ll 2 2 IGBT MOSFE T IGBTppnp 900VIGBT 900VIGBT IGBT p 900VIGBT 900VIGBT 2.8 GT60M323 GT60M323 VCE(sat)(V) @IC = 50 A ... | Original |
16 pages, |
MG30T1AL1 GT45 GF30F123 GT15N101 GT50J101 MG60M1AL1 GT50N322 GT45F123 GT50T101 GT30F125 gt30g122 GT45G127 IGBT GT30J124 gt30g123 gt30g124 datasheet abstract |
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| Abstract: o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs , variety of packages Construction The basic structure of the planar IGBT consists of four , transistor to allow conductivity modulation during conduction. Unlike MOSFETs, the IGBT does not have an , M A ET L ct 2 Emitter 2 IGBT Technical Overview Prior to the , other hand, the IGBT structure consists of a pnp bipolar transistor and a collector contact made on the ... | Original |
16 pages, |
GT45F128 gt30g123 GT45G127 GT45G122 gt30g122 GT30F125 gt60m303 application notes GT45f122 Series GT45F12 MG30T1AL1 gt30f122 IGBT GT30J124 replacement for GT30F124 GT50N322 datasheet abstract |
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| Abstract: 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET , packages Construction The basic structure of the planar IGBT consists of four layers (pnpn , allow conductivity modulation during conduction. Unlike MOSFETs, the IGBT does not have an integral , or M A ET L ct 2 Emitter 2 IGBT Technical Overview Prior to the , other hand, the IGBT structure consists of a PNP bipolar transistor and a collector contact made on the ... | Original |
16 pages, |
TRANSISTOR REPLACEMENT GUIDE gt30j122 MG30T1AL1 GT50J101 induction cooker circuit diagram GT45G122 mg60m1al1 gt50j327 GT50N322 gt40j323 gt35j321 gt30g122 GT45G127 gt30f122 datasheet abstract |
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| Abstract: shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs , variety of packages Construction The basic structure of the planar IGBT consists of four layers (pnpn , allow conductivity modulation during conduction. Unlike MOSFETs, the IGBT does not have an integral , c r to M ET AL Emitter 2 IGBT Technical Overview Prior to the development , other hand, the IGBT structure consists of a PNP bipolar transistor and a collector contact made on the ... | Original |
16 pages, |
GT15N101 GT50M101 igbt rice cooker motorola DIODE 1N751A 808 mg30t1al1 GT50J101 diagram rice cooker induction cooker circuit diagram GT45F124 mg60m1al1 diagram induction cooker gt60n323 GT50N322 datasheet abstract |
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