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GT30J110SRA
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Toshiba Electronic Devices & Storage Corporation
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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TLP5702H
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Toshiba Electronic Devices & Storage Corporation
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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TLP5705H
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Toshiba Electronic Devices & Storage Corporation
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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TBAW56
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Toshiba Electronic Devices & Storage Corporation
|
Switching Diode, 80 V, 0.215 A, SOT23 |
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HN1D05FE
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Toshiba Electronic Devices & Storage Corporation
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Switching Diode, 400 V, 0.1 A, ES6 |
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TK190U65Z
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Toshiba Electronic Devices & Storage Corporation
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MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL |
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