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Part Manufacturer Description Datasheet BUY
LT3585EDDB-0#PBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3485EDD-3#TRPBF Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3585EDDB-3#TRPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3585EDDB-3 Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3585EDDB-1#TRMPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3485EDD-1#TR Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

IGBT 4000V

Catalog Datasheet MFG & Type PDF Document Tags

IGBT 4000V

Abstract: isoplus ixys mounting Contact: Donald Humbert Tel: 408-982-0700 Fax: 408-496-0670 IXYS Releases 4000V/40A IGBT to Expand its Very High Voltage (VHV) IGBT Family SANTA CLARA, Calif.-(BUSINESS WIRE)-Feb. 13, 2006-IXYS Corporation (NASDAQ:SYXI News) announces the release of a new 4000V/40A IGBT, the IXEL40N400. IXYS' unique offering of discrete 2500V and 4000V VHV IGBTs provide a myriad of benefits to system designers in high voltage applications. The very high voltage and current ratings of these parts coupled with simplified
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IGBT 4000V isoplus ixys mounting ixys IXLF19N250A Discrete IGBTS Igbts guide 2006--IXYS

IGBT 4000V

Abstract: snubbers norfolk Norfolk Capacitors Limited GTO Snubbers Thyristor Snubbers IGCT Protection DC Filters IGBT Filters IGBT - AC Harmonic Filters Energy Discharge Capacitors Section Start Previous Page GTO Protection Capacitors ~ tables Next Page 1800V - 2000V - 2500V - 2600V - 3300V - 3600V - 4000V - 4500V - 6000V - 7200V Home Page GATOS - 4000V range Udc = 2200V About Us A brief , administrator if any pages have errors UN = 3200V Us = 4000V Umax = 1100V rms Imax (Arms) Ip
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GT1839 GT1842 GT1844 GT1612 GT1614 GT1626 snubbers norfolk norfolk capacitors NCL capacitor Norfolk Capacitors gt1844 GTO catalogue GT1834 GT1835 GT1836 GT1837 GT1838

norfolk capacitors

Abstract: IGCT thyristor Norfolk Capacitors Limited GTO Snubbers Thyristor Snubbers IGCT Protection DC Filters IGBT Filters IGBT - AC Harmonic Filters Energy Discharge Capacitors Section Start Previous Page IGCT Protection Capacitors ~ tables Next Page Home Page 4000V - 4500V - 6000V GCT - 4000V range Udc = 2800V UN = 3200V Us = 4000V Umax = 1100V rms Imax (Arms) Ip (A) Rs (mW) H (nH) Rq (°C/W) Ø (µF) (±2 mm) (±2 mm) 0.25 30 2600 1.82 12
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GC2661 GC2663 GC2672 GC2673 IGCT thyristor IGCT NCL GTO Thyristor protection capacitor GC2662 GC2664 GC2665 GC2666

NCL snubber capacitor

Abstract: ZC2105 Norfolk Capacitors Limited GTO Snubbers Thyristor Snubbers IGCT Protection DC Filters IGBT Filters IGBT - AC Harmonic Filters Energy Discharge Capacitors Section Start Previous Page Thyristor Snubber Capacitors ~ tables Next Page Home Page 4000V - 6500V - 8000V ZC - 4000V range Udc = 1750V UN = 2800V Rs L Rq (mW) (nH) (°C/W) (µF) Imax (Arms) 0.33 9 150 4.01 , 4000V ZC - 6500V range Udc = 2800V UN = 4500V Rs L Rq (mW) (nH) (°C/W) (µF) Imax (Arms
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ZC2601 ZC2604 ZC2115 ZC2116 ZC2105 ZC2178 NCL snubber capacitor Thyristor snubber NCL capacitor zc2105 capacitor ncl zc ZC2600 ZC2602 ZC2603 ZC2605

IXGF30N400

Abstract: IXGF4N400 available in the Power Semiconductor Marketplace. These IGBT, MOSFET and BiMOSFETTM Families provide cost-effective solutions for applications requiring up to 4000V of power switching capability, with current , 3500 IGBT Market 3000 2500 Graphic on the left illustrates IXYS' IGBT device 2000 , Very High Voltage IGBTs IXYS' offers a unique portfolio of discrete 2500V, 3000V, and 4000V VHV IGBTs , to 4000V) and superior thermal performance. IXYS will also be offering a full range of high speed
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IXBX64N250 IXBH20N300 IXBK55N300 IXBF55N300 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 PLUS247 IXBF12N300 IXBF20N300 IXBH12N300 IXBT12N300

IXLF19N250A

Abstract: isoplus ixys mounting /4000V Very High Voltage (VHV) IGBTs SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH , 0.50ºC/W ISOPLUS i4-PACTM IXEL40N400 4000V 40A 4.00V 220mJ / 2800V 0.33ºC/W , Very High Voltage Ratings ­ 2500V, 4000V High Current Ratings ­ 19A, 40A ISOPLUS i4-PacTM and , capability. Cost effective clip mounting. ISOPLUS i5-PacTM ISOPLUS i5-PacTM C G E IGBT , series of discrete 2500V and 4000V VHV IGBTs providing a myriad of benefits to system designers in high
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ixys pb free VCES 4000V ISOPLUS247 IXFR55N50 IXFX55N50 IGBT 1500V 40a

GT1485

Abstract: GT1580 Norfolk Capacitors Limited GTO Snubbers Thyristor Snubbers IGCT Protection DC Filters IGBT Filters IGBT - AC Harmonic Filters Energy Discharge Capacitors Section Start Previous Page GTO Protection Capacitors~ tables Next Page 1800V - 2000V - 2500V - 2600V - 3300V - 3600V - 4000V - 4500V - 6000V - 7200V Home Page GATOS - 2500V range Udc = 1300V About Us A brief profile of NCL and a description of company objectives. Products Information about our catalogue
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GT1580 GT1581 GT1484 GT1485 GT1582 GT1817 GT2331 NCL capacitor gt1816 GT1483 GT1425B

GT1825

Abstract: IGCT Norfolk Capacitors Limited GTO Snubbers Thyristor Snubbers IGCT Protection DC Filters IGBT Filters IGBT - AC Harmonic Filters Energy Discharge Capacitors Section Start Previous Page GTO Protection Capacitors ~ tables Next Page 1800V - 2000V - 2500V - 2600V - 3300V - 3600V - 4000V - 4500V - 6000V - 7200V Home Page GATOS - 3300V range About Us A brief profile of NCL and a description of company objectives. Products Information about our catalogue products
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GT1509A GT1818 GT1819 GT1820 GT1823 GT1825 GTO catalog NCL capacitor gt1831 snubbers GT1821 GT1822

MOSFET circuit welding INVERTER

Abstract: MOSFET welding INVERTER MODULES FAST RECOVERY AND THREE-PHASE DIODE MODULES ASSEMBLIES IGBT ASSEMBLIES CUSTOM MODULES 2007 IGBTs IGBT / HVIGBT / Trench Gate Applications Include: Traction Inverter UPS Power , Supply For IGBT Gate Driver Hybrid IC Gate Drive To Provide Power Up To 1400A IGBTs With 1700V , Dual Common Cathode Split Dual AC Switch POW-R-BLOKTM: VOLTAGE: 600V TO 4000V CURRENT: 20A , www.pwrx.com Call the Power Line at 1-800-451-1415 IGBT ASSEMBLIES POW-R-PAK Applications Include
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MOSFET circuit welding INVERTER MOSFET welding INVERTER MOSFET welding INVERTER 200A 600V igbt dc to dc buck converter 600V 30A igbt dc to dc buck converter 200v dc motor igbt

NCL capacitor

Abstract: GT2588 Norfolk Capacitors Limited GTO Snubbers Thyristor Snubbers IGCT Protection DC Filters IGBT Filters IGBT - AC Harmonic Filters Energy Discharge Capacitors Section Start Previous Page GTO Protection Capacitors~ tables Next Page 1800V - 2000V - 2500V - 2600V - 3300V - 3600V - 4000V - 4500V - 6000V - 7200V Home Page GATOS - 6000V range About Us Udc = 3300V UN = 4800V Us = 6000V Umax = 1700V rms Ip (A) Rs (mW) (nH) Rq (°C/W) H (µF) Imax
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GT1848 GT1849 GT1850 GT1851 GT2587 GT2588 GT2593 NCL capacitor gt1847 GT2589 GT1846 GT1847

GT1482

Abstract: NCL capacitor GT1635 Norfolk Capacitors Limited GTO Snubbers Thyristor Snubbers IGCT Protection DC Filters IGBT Filters IGBT - AC Harmonic Filters Energy Discharge Capacitors Section Start Previous Page GTO Protection Capacitors ~ tables Next Page 1800V - 2000V - 2500V - 2600V - 3300V - 3600V - 4000V - 4500V - 6000V - 7200V Home Page GATOS - 1800V range Udc = 900V About Us A brief profile of NCL and a description of company objectives. Products Information about our catalogue
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GT1804 GT1635 GT1508 GT1636 GT1807 GT1808 GT1482 NCL capacitor GT1635 GT1812 g-t1636 GT1805 GT1806

VCES 4000V

Abstract: +150 (125) 3400 Class F 40/125/56 per IGBT, Tcase = 25 °C AC, 1 min. 4) DIN 40 040 DIN IEC 68 , Tcase = 25/75 °C; tp = 1 ms A A A A2s SEMITRANS® M Low Loss IGBT Modules SKM 400 GA 174 D , Eon Eoff per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 1200 V VGE = ­15 V / +15 V 3) IC = 300 , ) Thermal characteristics Rthjc Rthjc Rthch per IGBT per diode D per module GA Features · MOS input (voltage controlled) · N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT) ·
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B6-278

cv190

Abstract: IGBT 4000V +150 (125) 3400 Class F 40/125/56 per IGBT, Tcase = 25 °C AC, 1 min. 4) DIN 40 040 DIN IEC 68 , Tcase = 25/75 °C; tp = 1 ms A A A A2s SEMITRANS® M Low Loss IGBT Modules SKM 200 GB 174 D , Eon Eoff per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 1200 V VGE = ­15 V / +15 V 3) IC = 150 , characteristics Rthjc Rthjc Rthch per IGBT per diode D per module GB Features · MOS input (voltage controlled) · N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT) · Low inductance case
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cv190 B6-270

LS-60

Abstract: DIN 44 300 T1 +150 (125) 3400 Class F 40/125/56 per IGBT, Tcase = 25 °C AC, 1 min. 4) DIN 40 040 DIN IEC 68 , Tcase = 25/70 °C; tp = 1 ms A A A A2s SEMITRANS® M Low Loss IGBT Modules SKM 300 GB 174 D , Eon Eoff per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 1200 V VGE = ­15 V / +15 V 3) IC = 200 , ) Thermal characteristics Rthjc Rthjc Rthch per IGBT per diode D per module GB Features · MOS input (voltage controlled) · N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT) ·
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LS-60 DIN 44 300 T1

A174D

Abstract: 1080 / 800 A Vges ± 20 V Ptot per IGBT, ToaSe = 25 °C 2780 W Tj, (Tstg) -40 . +150 (125) °C , Low Loss IGBT Modules SKM 400 GA 174 D Preliminary Data SEMITRANS 4 Characteristics Symbol , \Tj = 25 (125) °C J - 3,3(3,6) - V 9fs V ce = 20 V, lc = 300 A 108 150 - S CcHC per IGBT - - 1,4 , (72) - nc Thermal characteristics Rthjc per IGBT - - 0,045 °c/w Rthjc per diode D - - 0 , '¢ N channel, homogeneous Silicon structure (NPT- Non punch-through IGBT) â'¢ Low inductance case â
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OCR Scan
A174D CASED59

SKM 300 CIRCUIT

Abstract: B628 . +150 (125) 3400 Class F 40/125/56 per IGBT, Tcase = 25 °C AC, 1 min. 4) DIN 40 040 DIN , /70 °C Tcase = 25/70 °C; tp = 1 ms A A A A2s SEMITRANS® M Low Loss IGBT Modules SKM 500 GA , ) tf Eon Eoff per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 1200 V VGE = ­15 V / +15 V 3) IC = , ) Thermal characteristics Rthjc Rthjc Rthch per IGBT per diode D per module GA Features · MOS input (voltage controlled) · N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT) ·
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SKM 300 CIRCUIT B628 B6-280
Abstract: IXEL40N400 Very High Voltage IGBT VCES IC110 VCE(sat) tfi(typ) ( Electrically Isolated Tab) = = ≤ = 4000V 40A 3.2V 425ns ISOPLUS i5-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 4000 V Continuous ±20 V VGEM , Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation UL Recognized , IC110, VCE = 10V, Note 1 14 ISC IC = IC110, VCC = 3400V, VCM < 4000V ISOPLUS i5-PakTM HV IXYS
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40N400
Abstract: SEMITRANS® M Low Loss IGBT Modules SKM 500 GA 174 D P re lim in a ry D a ta Inverse Diode 8) If = , ,8 100 3,3 - V V mA mA nA V V S 1,4 - CcHC per IGBT - - C¡es 1 , characteristics Rthjc Rthjc Rthch per IGBT per diode D per module SEMITRANS 4 JE GA Features â , IGBT) â'¢ Low inductance case â'¢ Low tail current with low temperature dependence â'¢ High short , A/|xs, VGE = 0 V 3> Use V GEoff = -5 . -15 V 4) Option ViS0| = 4000V/1 min add suffix ,H4â'˜â -
OCR Scan

GTO thyristor 1200V 50A

Abstract: scr driving circuit for dc motor ASSEMBLIES IGBT ASSEMBLIES CUSTOM MODULES POWEREX 2009:Layout 1 12/31/08 9:18 AM Page 3 IGBTs IGBT / HVIGBT / CSTBT Applications Include: G Inverters G Medical Power Supplies G Motor , Converters to Provide +15V Power Supply for IGBT Gate Drivers G Development Kits G HVICs for Driving , Cathode AC Switch POW-R-BLOKTM: VOLTAGE: 600V TO 4000V CURRENT: 20A TO 2500A POW-R-BRIKTM: VOLTAGE , Page 8 IGBT Assemblies POW-R-PAK Applications Include: G G G G G Energy Storage
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GTO thyristor 1200V 50A scr driving circuit for dc motor SCR Gate Drive 200v dc motor igbt for HIGH POWER induction heating SWITCHING WELDING BY MOSFET igbt circuit for induction melting

P-Channel mosfet 400v to220

Abstract: IGBT DRIVE 500V 300A MOSFETs RDS(on), Small packages, QG, Future Direction DS(on) 3. High Power IGBT Modules for , Prototype 600V Trench IGBT developed 1994 - 400V Strobe Flash IGBT production started 1995 - 250V 400A, 600A Trench gate IGBT module production started 1998 - 1200V Trench IGBT developed 1999 - Production of 600V, 1200V trench gate IGBT modules started 1999 - Production of sub µm trench MOSFETs started , VGSS and ESD ruggedness ESD W ithstanding (Human Body Model) FY10AAJ-03A (No failures) 4000V
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CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CM300DU-24F CY25AAJ-8 350VDC CM600HA-5F CM450HA-5F CM350DU-5F
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