IFP7N60 - Datasheet Archive

 

N-Channel MOSFET Features · RDS(on) (Max 1.2 )@VGS=10V · Gate Charge (Typical 28 nC) · Maximum Junction

 

IFP7N60 IFP7N60 N-Channel MOSFET Features · RDS(on) (Max 1.2 )@VGS=10V · Gate Charge (Typical 28 nC) · Maximum Junction Temperature Range (150 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25 °C) Continuous Drain Current(@TC = 100 °C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature Storage Temperature Value Units 600 7.0 4.4 28.1) ±30 420.2) 14.7.1) 4.5.3) 147 1.18 -55 ~ 150 150 V A A A V mJ mJ V/ns W W/°C °C °C TSTG TJ Notes 1). Repeativity rating : pulse width limited by junction temperature 2). L = 15.7 mH, IAS = 7.0 A, VDD = 50 V, RG = 25 , Starting TJ = 25 °C 3). ISD 7.0 A, di/dt 200 A/us, VDD BVDSS, Starting TJ = 25 °C Ver.00/24.11.2009 IFP7N60-TSe.doc 1 IFP7N60 IFP7N60 Thermal Characteristics Symbol Parameter Min. Value Typ. Max. RJC Thermal Resistance, Junction-toCase - - 0.85 RJA Thermal Resistance, Junction-toAmbient* - 0.5 - RJA Thermal Resistance, Junction-toAmbient - - 62.5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) Source-Drain Diode Characteristics and Maximum Ratings Symbol IS ISM VSD trr Qrr Parameter Test Conditions Maximum Continuous Source-Drain Diode Forward Current Maximum Pulsed Source-Drain Diode Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 7.0 A, VGS = 0 V IS = 7.0 A, VGS = 0 V, dIF/dt = 100 A/us Min Typ Max - - 7.0 - - 28 - - 1.4 - 365 - - 3.4 - Ver.00/24.11.2009 IFP7N60-TSe.doc Units A V ns uC 2 IFP7N60 IFP7N60 Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Off Characteristics BVDSS Drain-Source Breakdown Voltage BVDSS/ Breakdown Voltage TJ Temperature coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage, Forward Gate-source Leakage, Reverse On Characteristics VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-state Resis-tance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Dynamic Characteristics td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge(Miller Charge) Test Conditions VGS = 0 V, ID = 250 uA ID = 250 uA, referenced to 25 °C Min Typ Max Units 600 - - V - 0.6 - V/°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125 °C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V - - 10 uA - - 100 uA - - 100 nA - - -100 nA VDS = VGS, ID = 250 uA VGS = 10 V, ID = 3.5 A 2.0 - 4.0 V - 1.0 1.2 VGS = 0 V, VDS =25 V, f = 1 MHz VDD = 300 V, ID =7.0 A, RG =25 Pulse Width 300us, Q > 50 VDS = 480 V, VGS = 10 V, ID = 7.0 A - 1100 1500 110 150 12 16 - 15 30 110 40 28 5 11 40 70 230 90 37 - Ver.00/24.11.2009 IFP7N60-TSe.doc pF ns nC 3 IFP7N60 IFP7N60 Chip size Package Chip Ver.00/24.11.2009 IFP7N60-TSe.doc 4 IFP7N60 IFP7N60 Package Dimensions -220 B/3 Ver.00/24.11.2009 IFP7N60-TSe.doc 5