IFN5432 IFN5433 IFN5434 NJ903 - Datasheet Archive

B-45 01/99 IFN5432, IFN5433, IFN5434 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA =

Databook.fxp 1/13/99 2:09 PM Page B-45 B-45 01/99 IFN5432 IFN5432, IFN5433 IFN5433, IFN5434 IFN5434 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Analog Low On Resistance Switches ¥ Choppers IFN5432 IFN5432 At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Min V(BR)GSS Max 25 IGSS Gate Source Cutoff Voltage VGS(OFF) 4 Drain Saturation Current (Pulsed) IDSS Min Unit V IG = 1µA, VDS = ØV 200 pA VGS = 15V, VDS = ØV 200 nA VGS = 15V, VDS = ØV 4 V VDS = 5V, IG = 3 nA 25 200 3 9 100 1 30 Test Conditions mA VDS = 5V, VGS = 10V 200 nA VDS = 5V, VGS = 10V 100 mV VGS = ØV, ID = 10 mA 7 10 TA = 150°C VDS = 15V, VGS = ØV pA VDS = ØV, ID = 10 mA 200 200 200 200 50 2 Process NJ903 NJ903 Max 200 VDS rDS(ON) 10 IFN5434 IFN5434 200 200 ID(OFF) Static Drain Source ON Resistance Max 25 150 Drain Source ON Voltage Min 200 Gate Reverse Current Drain Cutoff Current IFN5433 IFN5433 25 V 100 mA 300 mW 2.4 mW/°C 70 5 TA = 150°C Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 5 7 10 VGS = ØV, ID = ØA f = 1 kHz Common Source Input Capacitance Ciss 60 60 60 pF VDS = ØV, VGS = 10V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 20 20 20 pF VDS = ØV, VGS = 10V f = 1 MHz Turn ON Delay Time td(on) 4 4 4 ns Rise Time tr 1 1 1 ns Turn OFF Delay Time td(off) 6 6 6 ns Fall Time tf 30 30 30 ns VDD = 1.5 V, VGS(ON) = ØV VGS(OFF) = 12V, ID(ON) = 10 mA (IFN5432 IFN5432) RL = 145 (IFN5433 IFN5433) RL = 143 (IFN5433 IFN5433) RL = 140 Switching Characteristics TOÐ52 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375