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IFN146 Datasheet

Part Manufacturer Description PDF Type
IFN146 InterFET Dual N-Channel Silicon Junction Field-Effect Transistor Original
IFN146 InterFET Dual N-Channel silicon junction field-effect transistor Original

IFN146

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Databook.fxp 1/13/99 2:09 PM Page D-5 D-5 01/99 IFN146 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25°C free air temperature: IFN146 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR InterFET
Original
2sk146 datasheet 2sk146 equivalent equivalent transistor TO 2sk146 NJ450
Abstract: -5 D-5 01/99 IFN146 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise Audio , Derating Storage Temperature Range At 25°C free air temperature: IFN146 Static Electrical InterFET
Original
2SK17 2SK59 2SK105 2SK113 IFN105 NJ132 2SK147 equivalent transistor sdg 2SK105 Datasheet 2sk152 equivalent 2SK147 2SK40 IFN17
Abstract: IFN146 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise Audio Amplifier ¥ , Storage Temperature Range At 25°C free air temperature: IFN146 Static Electrical Characteristics InterFET
Original
2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44
Abstract: 8-94 E5 IF N 146 D U A L N -C H A N N E L SILICON JUNCTION FIELD-EFFECT TRANSISTOR LOW NOISE AUDIO AMPLIFIER Absolute maximum ratings at TA = 25"C Equivalent to Japanese 2SK146 Reverse Gate Source & Reverse Gate Drain Voltage - 40 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 375 mW Power Derating 3 mW/°C Storage Temperature Range -65°C to 200°C IFN146 At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate -
OCR Scan
TO71 package 150-C
Abstract: E5 9 -9 7 IFN 146 DUAL N -CH AN N EL SILICON JUNCTION FIELD-EFFECT TRANSISTOR â'¢ LOW NOISE AUDIO AMPLIFIER ♦ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation 375 mW Power Derating 3 mW/°C Storage Temperature Range -65°C to 200°C IFN146 At 25°C free air temperature: Static Electrical Characteristics Min Process NJ450 V IG -
OCR Scan
Abstract: Databook.fxp 1/13/99 2:09 PM Page F-36 F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts G 10 mA +150°C ­ 65°C to +175°C Devices in this Databook based on the NJ450 Process. S-D Datasheet G 2SK363 IFN146, IFN147 IFN363 J108, J109 J110, J110A Die Size = 0.028" X 0.028" All InterFET
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D45 TRANSISTOR f36 transistor J108 J109 J110