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Part : MC68HC000IFN16R2 Supplier : Motorola Manufacturer : Rochester Electronics Stock : 498 Best Price : $24.65 Price Each : $24.65
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IFN105 Datasheet

Part Manufacturer Description PDF Type
IFN105 InterFET Silicon Junction Field-Effect Transistor Original
IFN105 InterFET N-Channel silicon junction field-effect transistor Original

IFN105

Catalog Datasheet MFG & Type PDF Document Tags

2SK105

Abstract: 2SK59 SGD E 2 9_g7 SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFN105 Process NJ16 NJ16 NJ16 NJ16 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel BVgss ig = - 1.0 ma V Min -20 -50 -30 -50 'gss Vgs = (),Vds = 0 nA Max 0.10 (-10V) 1.0 (- 30 V) 1.0 (-10V) 1.0 (â'" 30 V) VGS(off) Vos = 0, Id = 1-OnA V Min/Max -0.5/-6.0 (10 V) - 0.4/- 5.0 (15 V) - 0.4/- 5.0 (10V) -0.25/-4.5 (5.0 V) Idss Vds = (),Vgs = 0 mA Min/Max 0.3/6.5 (10V
-
OCR Scan
2SK59 SGD 2SK40 SGD 2SK105 E interfet 2SK17 SGD

2SK105 Datasheet

Abstract: 2SK105 Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel N Channel BVGSS IG = ­ 1.0 µA V Min ­ 20 ­ 50 ­ 30 ­ 50 ­ 50 IGSS VGS = ( ), VDS = Ø
InterFET
Original
2SK105 Datasheet to-226aa 2sk105 jfet TO226AA NJ16 226AA

2SK105 DGS

Abstract: 2SK105 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process Parameters Conditions Unit Limit 2SK17 IFN17 NJ16 N Channel 2SK40 IFN40 NJ16 N Channel 2SK59 IFN59 NJ16 N Channel 2SK105 IFN105 NJ16 N Channel BVGSS IGSS VGS(off) IDSS gfs Ciss Crss IG = ­ 1.0 µA VGS = ( ), VDS = Ø VDS = ( ), ID = 1.0 nA VDS = ( ), VGS = Ø VDS = ( ), VGS = Ø VGS = ( ), VDS = ( ) VGS = ( ), VDS = ( ) V Min nA Max V Min/Max mA Min/Max mS Typ pF Typ
InterFET
Original
2SK105 DGS V6010 2sj44 2SK152 IFN152 NJ132L 2SK363 IFN363 NJ450

2SK105

Abstract: 2SK105 F E2 Ja g a n e s ^ tju iv a le rv U F F T ^ g e ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ SILICON JUNCTION FIELD-EFFECT TRANSISTORS 9-97 Japanese InterFET Process Parameters BVg ss 2SK17 IFN17 NJ16 2SK40 IFN40 NJ16 2SK59 IFN59 NJ16 2SK105 IFN105 NJ16 Conditions Unit Limit V Min nA Max N Channel -2 0 N Channel -5 0 1.0 N Channel -3 0 1.0 ( - i o V) N Channel -5 0 Iq = Vgs - 1.0 [ik IGS S V GS (off) I DSS g fs C ¡ss C rss = 0, Vds = 0 ( - 10 V) 0.10 (- 30
-
OCR Scan
2SK105 F aX 010

J555

Abstract: 2SK40 Datasheet 2SK17, 2SK40 2SK59, 2SK105 IFN17, IFN40 IFN59, IFN105 J201, J202 J203, J204 J230, J231 J232 J500
InterFET
Original
J555 j556 2N4221 transistor J231 transistor j557 2N3954 2N3955 2N3956 2N3957 2N3958 2N4220

2SK146

Abstract: 2SK147 equivalent Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel N Channel BVGSS IG = ­ 1.0 µA V Min ­ 20 ­ 50 ­ 30 ­ 50 ­ 50 IGSS VGS = ( ), VDS = Ø
InterFET
Original
2SK147 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2sk146 datasheet IFN147

ld850

Abstract: CA850 C Language Users . 3.15.6 $ELSEIF, $_ELSEIF
NEC
Original
CC78K4 RA78K4 ld850 CA850 C Language Users SIDATA ca850 stk 490 110 CA850 U15653EJ1V0AN00 U15653EJ1V0AN V850/SA1

RA78K4

Abstract: CC78K4 . 3.15.6 $ELSEIF, $_ELSEIF
Renesas Electronics
Original
hx850 V800 V851 V852 V853 U15027E