NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| IF3601 | InterFET Corporation | N-Channel silicon junction field-effect transistor |
1 pages, |
Original |  |
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| IF3601 | InterFET Corporation | N-Channel Silicon Junction Field-Effect Transistor |
68 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-34 B-34 01/99 IF3601 , Range IF3601 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS ... | Original |
12 pages, |
Transistor B36 B-28 IF1320 IF140 IF140A IF142 IF9030 interfet 2N6449 2N6450 IF3601 2N6449 abstract |
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| Abstract: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821 2N3821, 2N3822 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: 2N3821 2N3821 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Cu ... | Original |
68 pages, |
NJ16 transistor J112 U290 transistor 2N5461 2N4393 J210 J231 2N5461 2N5021 IF3601 SMP5398 SMP5116 2N4858A 2N4221 transistor 2N6450 2N3821 2N3822 2N3821 abstract |
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| Abstract: Databook.fxp 1/13/99 2:09 PM Page F-48 F-48 01/99 NJ3600L NJ3600L Process Silicon Junction Field-Effect Transistor ¥ Large Capacitance Detector Pre-Amplifier S-D S-D S-D G G D-S D-S D-S Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C Device in this Databook based on the NJ3600L NJ3600L Process. Datasheet IF3601 IF3602 IF3602 Die Size = 0.074" X 0.074" All Bond Pads 0.004" Sq. Substrate is ... | Original |
2 pages, |
NJ3600L IF3602 IF3601 NJ3600L abstract |
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| Abstract: Databook.fxp 1/13/99 2:09 PM Page B-34 B-34 01/99 IF3601 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier At 25°C free air temperature: Absolute maximum ratings = TA at 25¡C Reverse Gate Source Voltage & Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range IF3601 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff ... | Original |
1 pages, |
NJ3600L IF3601 B34 transistor IF3601 abstract |
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