IEC61000-4-2 IEC61000-4-4 ESD8V0R1B-02LS ESD8V0R1B-02LRH TSLP-2-17 IEC61000-4-5 - Datasheet Archive

 

Bi-directional Low Capacitance TVS Diode · ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V

 

ESD8V0R1B. Bi-directional Low Capacitance TVS Diode · ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 IEC61000-4-2 (ESD): ±18 kV (air) ±15 kV (contact) IEC61000-4-4 IEC61000-4-4 (EFT): 40 A (5 / 50 ns) · Extremely small form factor down to 0.62 x 0.32 x 0.31 mm³ (0201) · Max. working voltage: -8 / +14 V · Very low reverse current < 1 nA typ. · Very low series inductance down to 0.2 nH typ. · Low capacitance of 4 pF typ. · Pb-free (RoHS compliant) package · Qualified according AEC Q101 Applications · USB 2.0, 10/100 Ethernet, Firewire, DVI · Mobile communication · Consumer products (STB, MP3, DVD, DSC.) · LCD displays, camera · Notebooks and destop computers, peripherals ESD8V0R1B-02LS ESD8V0R1B-02LS ESD8V0R1B-02LRH ESD8V0R1B-02LRH 1 2 Type ESD8V0R1B-02LRH ESD8V0R1B-02LRH ESD8V0R1B-02LS ESD8V0R1B-02LS Package TSLP-2-17 TSLP-2-17 TSSLP-2-1 Configuration 1 line, bi-directional 1 line, bi-directional 1 Marking E E 2009-12-18 ESD8V0R1B. Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol ESD discharge1) Value Unit VESD kV air 18 contact 15 Peak pulse current (tp = 8 / 20 µs)2) I pp 1 A Operating temperature range T op -55.150 °C Storage temperature T stg -65.150 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. -8 - 14 I(BR) = 1 mA, from pin 2 to 1 14.5 17 20 I(BR) = 1 mA, from pin 1 to 2 8.5 11 14 -