IDT6167SA IDT6167LA IDT6167 MIL-STD-883 384-BIT DSC-2981/08 IDT6167SA/LA P20-1 - Datasheet Archive

 

16K (16K x 1-Bit) IDT6167SA IDT6167LA Features high reliability CMOS technology. Access times as fast as 15ns are available. The

 

CMOS Static RAM 16K (16K x 1-Bit) IDT6167SA IDT6167SA IDT6167LA IDT6167LA Features high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1µW operating off a 2V battery. All inputs and the output of the IDT6167 IDT6167 are TTL-compatible and operate from a single 5V supply, thus simplifying system designs. The IDT6167 IDT6167 is packaged in a space-saving 20-pin, 300 mil Plastic DIP or CERDIP and a Plastic 20-pin providing high board-level packing densities. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883 MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability. High-speed (equal access and cycle time) ­ Military: 25/35/45/55/70/85/100ns (max.) ­ Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation - 2V data retention voltage (IDT6167LA IDT6167LA only) Available in 20-pin CERDIP and Plastic DIP, and 20-pin SOJ Produced with advanced CMOS high-performance technology CMOS process virtually eliminates alpha particle soft-error rates Separate data input and output Military product compliant to MIL-STD-883 MIL-STD-883, Class B Description The lDT6167 is a 16,384-bit high-speed static RAM organized as 16K x 1. The part is fabricated using IDT's high-performance, Functional Block Diagram A0 VCC GND 16,384-BIT 384-BIT MEMORY ARRAY ADDRESS DECODE A13 DIN I/O CONTROL DOUT CS CONTROL LOGIC WE 2981 drw 01 FEBRUARY 2001 1 ©2000 Integrated Device Technology, Inc. DSC-2981/08 DSC-2981/08 , IDT6167SA/LA IDT6167SA/LA CMOS Static RAM 16K (16K x 1-Bit) Military and Commercial Temperature Ranges Absolute Maximum Ratings(1) Pin Configurations A0 1 20 A1 2 19 A13 A2 3 18 A12 17 A11 16 Symbol VCC A10 Rating Com'l. Mil. Unit -0.5 to +7.0 -0.5 to +7.0 V VTERM Terminal Voltage with Respect to GND TA Operating Temperature 0 to +70 -55 to +125 o C TBIAS Temperature Under Bias -55 to +125 -65 to +135 o C -55 to +125 -65 to +150 o C A3 4 A4 5 A5 6 15 A9 A6 7 14 A8 DOUT 8 13 A7 TSTG Storage Temperature WE 9 12 DIN PT Power Dissipation 1.0 1.0 W 10 11 CS IOUT DC Output Current 50 50 mA GND P20-1 P20-1 D20-1 D20-1 DIP Top View , 2981 drw 02 2981 tbl 03 NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Pin Descriptions Name Description A0 - A13 Address Inputs CS Chip Select WE Write Enable VCC Power DIN DATAIN DOUT DATAOUT GND Ground Capacitance (TA = +25°C, f = 1.0MHz) Symbol CIN Input Capacitance COUT Output Capacitance CS WE Output Standby H X High-Z Standby Read L H DATAOUT Active Write L L High-Z Active Symbol Parameter VCC Supply Voltage GND Ground VIH 2981 tbl 02 NOTE: 1. H = VIH, L = VIL, X = Don't Care. Input High Voltage VIL Recommended Operating Temperature and Supply Voltage Commercial Unit V IN = 0V 7 pF VOUT = 0V 7 pF Recommended DC Operating Conditions Power Military Max. NOTE: 1. This parameter is determined by device characterization, but is not production tested. Truth Table(1) Grade Conditions 2981 tbl 04 2981 tbl 01 Mode Parameter(1) Temperature GND 0V 5V ± 10% 0OC to +70OC 0V Typ. Max. Unit 4.5 5.0 5.5 V 0 0 0 V 2.2 _ 6.0 V _ 0.8 V (1) -0.5 NOTE: 1. VIL (min.) = ­3.0V for pulse width less than 20ns, once per cycle. Vcc -55OC -55OC to +125OC 125OC Input Low Voltage Min. 5V ± 10% 2981 tbl 06 2 2981 tbl 05 IDT6167SA/LA IDT6167SA/LA CMOS Static RAM 16K (16K x 1-Bit) Military and Commercial Temperature Ranges DC Electrical Characteristics(1) (VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC ­ 0.2V) 6167SA/LA15 6167SA/LA15 Symbol ICC1 ICC2 ISB ISB1 6167SA/LA20 6167SA/LA20 Power Com'l. Com'l. Com'l. Mil. Unit Operating Power Supply Current CS < VIL, Outputs Open VCC = Max., f = 0(3) SA 90 90 90 90 mA LA 55 55 55 60 Dynamic Operating Current CS < VIL, Outputs Open VCC = Max., f = fMAX(3) SA 120 100 100 100 LA 100 80 70 75 Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open VCC = Max., f = fMAX(3) SA 50 35 35 35 LA 35 30 25 25 Full Standby Power Supply Current (CMOS Level) CS > VHC, VCC = Max., VIN > VHC or VIN < VLC, f = 0(3) SA 5 5 5 10 LA 0.9 0.05 0.05 0.9 Parameter 6167SA/LA25 6167SA/LA25 mA mA mA 2981 tbl 07 DC Electrical Characteristics(1) (con't.) (VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC ­ 0.2V) 6167SA/LA35 6167SA/LA35(2) 6167SA/LA45 6167SA/LA45(2) 6167SA/LA55 6167SA/LA55(2) 6167SA/LA70 6167SA/LA70(2) Symbol Parameter Power Mil. Mil. Mil. Mil. Unit ICC1 Operating Power Supply Current CS < VIL, Outputs Open VCC = Max., f = 0(3) SA 90 90 90 90 mA LA 60 60 60 60 Dynamic Operating Current CS < VIL, Outputs Open VCC = Max., f = fMAX(3) SA 100 100 100 100 LA 70 65 60 60 Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open VCC = Max., f = fMAX(3) SA 35 35 35 35 LA 20 20 20 15 Full Standby Power Supply Current (CMOS Level) CS > VHC, VCC = Max., VIN > VHC or VIN < VLC, f = 0(3) SA 10 10 10 10 LA 0.9 0.9 0.9 0.9 ICC2 ISB ISB1 mA mA mA 2981 tbl 08 NOTES: 1. All values are maximum guaranteed values. 2. ­55°C to +125°C temperature range only. Also available; 85ns and 100ns Military devices. 3. fMAX = 1/tRC, only address inputs cycling at fMAX. f = 0 means no address inputs change. 6.42 3 IDT6167SA/LA IDT6167SA/LA CMOS Static RAM 16K (16K x 1-Bit) Military and Commercial Temperature Ranges DC Electrical Characteristics (VCC = 5.0V ± 10%) IDT6167SA IDT6167SA Symbol |ILI| |ILO| VOL VOH Parameter Test Conditions Min. Max. Min. Max. Unit 10 5 _ 5 2 µA 10 5 _ _ 5 2 µA _ _ 0.4 _ 0.4 V 2.4 _ 2.4 _ V VCC = Max., VIN = GND to VCC Input Leakage Current Output Leakage Current Output Low Voltage MIL. COM'L. _ VCC = Max., CS = VIH, VOUT = GND to V CC MIL. COM'L. _ IOL = 8mA, VCC = Min. Output High Voltage IDT6167LA IDT6167LA IOH = -4mA, VCC = Min. _ _ 2981 tbl 09 Data Retention Characteristics Over All Temperature Ranges (LA Version Only) (VLC = 0.2V, VHC = VCC ­ 0.2V) Typ. (1) VCC @ Symbol Parameter V DR Test Condition tCDR 2.0V 3.0V Unit 2.0 _ _ _ _ V _ 0.5 0.5 1.0 1.0 200 20 300 30 µA 0 _ _ _ _ ns _ _ _ _ ns _ _ _ 2 2 µA _ Operation Recovery Time IILII(3) 3.0V MIL. COM'L. Chip Deselect to Data Retention Time tR(3) 2.0V tRC(2) Data Retention Current Min. _ VCC for Data Retention ICCDR Max. VCC @ Input Leakage Current CS > VHC VIN > VHC or < VLC 2981 tbl 10 NOTES: 1. TA = +25°C. 2. tRC = Read Cycle Time. 3. This parameter is guaranteed by device characterization, but is not production tested. Low VCC Data Retention Waveform DATA RETENTION MODE VCC 4.5V 4.5V VDR 2V tCDR CS tR VDR VIH VIH 2981 drw 03 4 , IDT6167SA/LA IDT6167SA/LA CMOS Static RAM 16K (16K x 1-Bit) Military and Commercial Temperature Ranges AC Test Conditions Input Pulse Levels GND to 3.0V Input Rise/Fall Times 5ns Input Timing Reference Levels 1.5V Output Reference Levels 1.5V AC Test Load See Figures 1 and 2 5V 2981 tbl 11 5V 480 480 DATAOUT DATAOUT 255 255 30pF* 5pF* , , 2981 drw 04 2981 drw 05 Figure 1. AC Test Load Figure 2. AC Test Load (for tCLZ, tCHZ, tWHZ and tOW ) *Includes scope and jig. AC Electrical Characteristics (VCC = 5.0V ± 10%, All Temperature Ranges) 6167SA15 6167SA15(3) Symbol Parameter 6167SA20 6167SA20(3)/25 6167LA20 6167LA20(3)/25 6167SA35 6167SA35(1)/45(1) 6167LA35 6167LA35(1)/45(1) 6167SA55 6167SA55(1) /70(1) 6167LA55 6167LA55(1) /70(1) Min. Max. Min. Max. Min. Max. Min. Max. Unit Read Cycle tRC Read Cycle Time 15 _ 20/25 _ 35/45 _ 55/70 _ ns tAA Address Access Time _ 15 _ 20/25 _ 35/45 _ 55/70 ns tACS Chip Select Access Time _ 15 _ 20/25 _ 35/45 _ 55/70 ns tCLZ(2) Chip Deselect to Output in Low-Z 3 _ 5/5 _ 5/5 _ 5/5 _ ns tCHZ(2) Chip Select to Output in High-Z _ 10 _ 10/10 _ 15/30 _ 40/40 ns 3 _ 5/5 _ 5/5 _ 5/5 _ ns 0 _ 0/0 _ 0/0 _ 0/0 _ ns _ 15 _ 20/25 _ 35/45 _ 55/70 ns tOH (2) tPU (2) tPD Output Hold from Address Change Chip Select to Power-Up Time Chip Deselect to Power-Down Time Write Cycle tWC Write Cycle Time 15 _ 20/20 _ 30/45 _ 55/70 _ ns tCW Chip Select to End-of-Write 15 _ 15/20 _ 30/40 _ 45/55 _ ns 15 _ 15/20 _ 30/40 _ 45/55 _ ns 0 _ 0/0 _ 0/0 _ 0/0 _ ns 13 _ 15/20 _ 30/30 _ 35/40 _ ns ns tAW tAS tWP Address Valid to End-of-Write Address Set-up Time Write Pulse Width tWR Write Recovery Time 0 _ 0/0 _ 0/0 _ 0/0 _ tDW Data Valid to End-of-Write 10 _ 12/15 _ 17/20 _ 25/30 _ ns tDH Data Hold Time 0 _ 0/0 _ 0/0 _ 0/0 _ ns tWHZ(2) Write Enable to Output in High-Z _ 7 _ 8/8 _ 15/30 _ 40/40 ns tOW(2) Output Active from End-of-Write 0 _ 0/0 _ 0/0 _ 0/0 _ ns 2981 tbl 12 NOTES: 1. ­55°C to +125°C temperature range only. Also available: 85ns and 100ns Military devices. 2. This parameter is guaranteed with AC Load (Figure 2) by device characterization, but is not production tested. 3. 0°C to +70°C temperature range only. 6.42 5 IDT6167SA/LA IDT6167SA/LA CMOS Static RAM 16K (16K x 1-Bit) Military and Commercial Temperature Ranges Timing Waveform of Read Cycle No. 1(1, 2) tRC ADDRESS tAA tOH PREVIOUS DATAOUT VALID DATAOUT DATAOUT VALID , 2981 drw 06 Timing Waveform of Read Cycle No. 2(1, 3) tRC CS tACS tCLZ DATAOUT tCHZ (4) (4) HIGH IMPEDANCE DATAOUT VALID tPU HIGH IMPEDANCE tPD ICC , VCC SUPPLY CURRENT ISB 2981 drw 07 NOTES: 1. WE is HIGH for Read cycle. 2. Device is continuously selected, CS is LOW. 3. Address valid prior to or coincedent with CS transition LOW. 4. Transition is measured ±200mV from steady state. 6 IDT6167SA/LA IDT6167SA/LA CMOS Static RAM 16K (16K x 1-Bit) Military and Commercial Temperature Ranges Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,3) tWC ADDRESS tAW CS tAS tWR tWP tCHZ (2) (4) WE tWHZ DATAOUT PREVIOUS DATAOUT VALID (4) tOW (4) (5) DATAOUT VALID (5) tDW DATAIN tDH DATAIN VALID 2981 drw 08 , Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,3) tWC ADDRESS tAW CS tAS tWR (2) tCW WE tDW DATAIN tDH DATAIN VALID 2981 drw 09 NOTES: 1. A write occurs during the overlap of a LOW CS and a LOW WE. 2. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle. 3. If the CS low transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high-impedance state. 4. Transition is measured ±200mV from steady state. 5. During this period, the I/O pins are in the output state and the input signals must not be applied. 6.42 7 , IDT6167SA/LA IDT6167SA/LA CMOS Static RAM 16K (16K x 1-Bit) Military and Commercial Temperature Ranges Ordering Information - Military IDT 6167 XX XXX XX X Device Type Power Speed Package Process/ Temperature Range B Military (­55°C to +125°C) Compliant to MIL-STD-883 MIL-STD-883, Class B D 300 mil CERDIP (D20­1) 25 35 45 55 70 85 100 Speed in nanoseconds SA LA Standard Power Low Power 2981 drw 10 Ordering Information - Commerical IDT 6167 XX XXX XX X Device Type Power Speed Package Process/ Temperature Range Blank Commercial (0°C to +70°C) P 300 mil Plastic DIP (P20­1) 15* 20 25 Speed in nanoseconds SA LA Standard Power Low Power * Available in standard power only. 2981 drw 10A 8 IDT6167SA/LA IDT6167SA/LA CMOS Static RAM 16K (16K x 1-Bit) Military and Commercial Temperature Ranges Datasheet Document History 1/13/2000 1/26/2000 08/09/00 02/01/01 Pg. 7 Pg. 8 Pg. 1-3, 5, 8 Pg. 1, 2, 8 Pg. 9 Updated to new format Removed Note 1 from Write Cycle No. 1 and No. 2 drawings; renumbered notes and footnotes Added Datasheet Document History Removed speed offering 15ns and 20ns for military and 35ns for commercial temperature range. Removed SOJ package offering. Updated Datasheet History Not recommended for new designs Removed "Not recommended for new designs" CORPORATE HEADQUARTERS 6024 Silver Creek Valley Road San Jose, CA 95138 for SALES: 800-345-7015 or 408-284-8200 fax: 408-284-2775 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 6.42 9 for Tech Support: ipchelp@idt.com 800-345-7015