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IDD08SG60C Infineon Technologies Silicon Carbide Schottky Diodes - NEW 3G now available!; Package: PG-TO252-3; Technology: thinQ! 3G; V: 600.0 V; I<sub>F </sub> (typ): 8.0 A; Q<sub>C</sub> (typ): 12.0 nC; Package: DPAK (TO-252)
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7 pages,
262.98 Kb

Original Buy
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Abstract: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary · , IDD08SG60C PG-TO252-3 PG-TO252-3 D08G60C D08G60C n.c. A C Maximum ratings Parameter Symbol Conditions , 2010-03-19 IDD08SG60C Parameter Values Symbol Conditions Unit min. typ. max. - - , page 2 2010-03-19 IDD08SG60C 1 Power dissipation 2 Diode forward current P tot=f(T C , 6 8 V F [V] page 3 2010-03-19 IDD08SG60C 5 Typ. capacitance charge vs. current ... Original
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7 pages,
268.46 Kb

JESD22 8 pin SMD IDD08SG60C D08G60C PG-TO252-3 IDD08SG60C abstract
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Abstract: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary · , Package Marking Pin 1 Pin 2 Pin 3 IDD08SG60C PG-TO252-3 PG-TO252-3 D08G60C D08G60C n.c. A C , Rev. 2.3 reflow MSL3 page 1 260 2009-08-03 IDD08SG60C Parameter Values Symbol , Only capacitive charge occuring, guaranteed by design. page 2 2009-08-03 IDD08SG60C 1 Power , 2.3 3 4 V F [V] 0 2 4 6 8 V F [V] page 3 2009-08-03 IDD08SG60C 5 ... Original
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7 pages,
262.98 Kb

JESD22 IDD08SG60C D08G60C PG-TO252-3 IDD08SG60C abstract
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Abstract: Power Management Selection Guide ­ February 2010 [www.infineon.com/PowerManagementDiscretes] [www.infineon.com/PowerManagementICs] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly electricity support. Being the leader in energy efficiency technologies, Infineon's products are enormously important for future energy supplies in terms of both exploiting renewables and using ener ... Original
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148 pages,
7180.25 Kb

BSC010NE2LS ICE3BR0665JF BSB028N06NN3 G IPB065N15N3 PRIMARION px3560 PX3684 Primarion PX3540 BSB044N08NN3 ICE3B0365J ICE 280 565 smps ICE2pcs02 ICE3BR1765J 7pin smps IC datasheet abstract
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