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IDB30E60ATMA1 Infineon Technologies AG Rectifier Diode, 1 Phase, 1 Element, 52.3A, 600V V(RRM), Silicon, GREEN, PLASTIC, TO-220SMD, 3 PIN visit Digikey Buy

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IDB30E60 Datasheet

Part Manufacturer Description PDF Type
IDB30E60 Infineon Technologies SMD, Fast Switching Diode, 600V, 30A, Silicon Diode, Fast recovery, Stamping Code:D30E60 Original
IDB30E60 Infineon Technologies 600V Standard Silicon Power Diodes Original
IDB30E60 Infineon Technologies 600V Silicon Power Diodes; Package: PG-TO263-3; I<sub>F </sub> (typ): 30.0 A; I<sub>F </sub> (max): 52.3 A; I<sub>F,SM</sub> (max): 117.0 A; V<sub>F</sub> (typ): 1.5 V; I<sub>R</sub> (max): 50.0 uA; Original

IDB30E60

Catalog Datasheet MFG & Type PDF Document Tags

diode 30a 400v

Abstract: DIODE 1000a IDB30E60 Fast Switching EmCon Diode Product Summary Feature VRRM · Low reverse , °C operating temperature · Easy paralleling 1 3 * RoHS compliant Type Package IDB30E60 , 2007-09-01 IDB30E60 Thermal Characteristics Symbol Parameter Values Unit min. typ , . Rev.2.2 Page 2 2007-09-01 IDB30E60 Electrical Characteristics, at Tj = 25 °C, unless , Rev.2.2 S Page 3 2007-09-01 IDB30E60 1 Power dissipation 2 Diode forward current
Infineon Technologies
Original
PG-TO263-3-2 D30E60 diode 30a 400v DIODE 1000a PG-TO-263-3-2 IDP30E60

D30E60

Abstract: 4252 IDP30E60 IDB30E60 Preliminary data Fast Switching EmCon Diode Product Summary , Pin 1 C PIN 2 A PIN 3 - IDB30E60 P-TO220-3.SMD Q67040-S4376 D30E60 NC C A , °C °C 2001-12-06 IDP30E60 IDB30E60 Preliminary data Thermal Characteristics Parameter , connection. PCB is vertical without blown air. Page 2 2001-12-06 IDP30E60 IDB30E60 Preliminary , 2001-12-06 IDP30E60 IDB30E60 Preliminary data 1 Power dissipation 2 Diode forward current Ptot
Infineon Technologies
Original
4252 Diode smd 30A P-TO220-2-2 Q67040-S4488
Abstract: IDB30E60 Fast Switching EmCon Diode Emitter Controlled Diode Product Summary Feature , â'¢ Easy paralleling 1 3 * RoHS compliant Type Package IDB30E60 PG-TO263 , 12.06.2013 2009-03-04 IDB30E60 Thermal Characteristics Symbol Parameter Values Unit min , without blown air. Rev.2.3 Page 2 2009-03-04 12.06.2013 IDB30E60 Electrical Characteristics , IDB30E60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj â Infineon Technologies
Original
Abstract: IDB30E60 Fast Switching EmCon Diode Feature · 600 V EmCon technology · Fast recovery · Soft , paralleling Product Summary VRRM IF VF T jmax 600 30 1.5 175 V A V °C P-TO220-3.SMD Type IDB30E60 , -55.+175 220 °C °C Rev.2.1 Page 1 2005-02-24 IDB30E60 Thermal Characteristics Parameter , 2005-02-24 IDB30E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter , IDB30E60 1 Power dissipation Ptot = f (TC) parameter: Tj 175 °C W 150 2 Diode forward current IF = f Infineon Technologies
Original

D30E60

Abstract: IDP30E60 IDP30E60 IDB30E60 Fast Switching EmCon Diode Product Summary Feature VRRM · Low , IDB30E60 P-TO220-3.SMD Q67040-S4376 D30E60 NC C A Maximum Ratings, at Tj = 25 °C, unless , IDB30E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max , 2003-07-31 IDP30E60 IDB30E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified , 2003-07-31 IDP30E60 IDB30E60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f
Infineon Technologies
Original
Abstract: IDB30E60 Fast Switching Emitter Controlled Diode Fast Switching EmCon Diode Product Summary , PG-TO263-3 â'¢ Easy paralleling * RoHS compliant Type Package IDB30E60 PG-TO263 , 80.9 -55.+150 -55.+175 260 260 W W °C °C °C 2013-12-05 2009-03-04 IDB30E60 , 2009-03-04 2013-12-05 IDB30E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified , factor Rev.2.4 S Page 3 2009-03-04 2013-12-05 IDB30E60 1 Power dissipation 2 Diode Infineon Technologies
Original