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ISL5585GCRZ-TK Intersil Corporation SLIC 1-CH 53dB 45mA 3.3V/-18V/-24V/-28V 32-Pin QFN EP T/R visit Intersil
ISL32175EFBZ-T Intersil Corporation SPECIALTY TELECOM CIRCUIT, PDSO16, ROHS COMPLIANT, PLASTIC, MS-012AC, SOIC-16 visit Intersil
ISL32273EFVZ-T Intersil Corporation QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, RS-485/RS-422 Receivers; SOIC16, TSSOP16; Temp Range: See Datasheet visit Intersil Buy
ISL32275EFBZ-T Intersil Corporation SPECIALTY TELECOM CIRCUIT, PDSO16, ROHS COMPLIANT, PLASTIC, MS-012AC, SOIC-16 visit Intersil
ISL1561IRZ Intersil Corporation Fixed Gain Dual Port Class-G Differential xDSL Line Driver; QFN24; Temp Range: -40° to 85°C visit Intersil Buy
ISL1561IRZ-T13 Intersil Corporation Fixed Gain Dual Port Class-G Differential xDSL Line Driver; QFN24; Temp Range: -40° to 85°C visit Intersil Buy

IC tl 077

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: . N e vertheless, s e m ic o n d u c to r devices in g e n e ra l can m a lfu n c tio n o r fa il d u , , t o observe sta n d a rd s o f s a fe ty , and t o a void s itu a tio n s in w h ic h a m a lfu n c , n d itio n s set f o r th in th e TOSHIBA S e m ic o n d u c to r R e lia b ility H a n d b o o k . , th e r rig h ts o t th e th ir d p a rtie s w h ic h m ay re s u lt fro m its use. No license is g ra , fo r in te rn a l lo g ic (5V) V3 P ow er supply fo r LCD d riv e c irc u it V5 P ow er -
OCR Scan
Abstract: 180A TL = 90°C 8.3ms, half sine PIN 2 2 PIN PIN 1 1 PIN PIN 3 HEAT SINK #8;#8;#8;#8; VF IR , INCHES #3;#2;#5; #3;#11; .039 .047 .006 .017 .030 .041 .065 .077 .148 .169 .110 .126 .250 .264 .065 .077 .207 .228 .149 .157 .027 .031 .025 .029 .022 .026 .177 .185 MM #3;#2;#5; 1.00 , Solder Exemption Applied, see EU Directive Annex 7. Revision: B w w w.m c c se m i.c om 1 of 3 -
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Abstract: (Note 2) RqJA Thermal Resistance, Junctionâ'toâ'Lead (TL = 25ï'°C) (Note 1) Max 24 ï'°C/W , . Current Derating, Lead 0 80 TA, AMBIENT TEMPERATURE (ï'°C) TL, LEAD TEMPERATURE (ï'°C) PF , Drop (0.77 V Max @ 2.0 A, TJ = 150ï'°C) Low Forward Voltage Drop (0.71 V Max @ 1.0 A, TJ = 150ï , Average Rectified Forward Current @ TL = 155ï'°C @ TL = 135ï'°C IF(AV) Non-Repetitive Peak Surge , +175 ï'°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ON Semiconductor
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Abstract: Voltage Maximum thermal Resistance Repetitive Peak Avalanche Power Ï® #28;Ï­ > TL = 90°C #28;Ï , .047 .006 .017 .030 .041 .065 .077 .148 .169 .110 .126 .250 .264 .065 .077 .207 .228 , ) 12 10 8 6 4 2 0 0 25 50 75 100 125 150 TL, Lead Temperature (°C) 1000 , .3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics w w w.m c c se m i.c om , authorized distributors. w w w.m c c se m i.c om Re vision: H 3 of 3 2 0 1 3 /0 7 /0 5 - -
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z710

Abstract: 2T1-2T2 B CD Q Q _r H H _TL "LT OUTPUT ENABLE X L H L H INHIBIT H X H L H INHIBIT L ~L H _TL "LT OUTPUT , , there will be some possibility of damaging the IC by rush current or latch-up. If the capacitance of the , damage to the IC is avoided. The maximum value of forward current through the parasitic diode is  , external clamping diode is needed to protect the IC from rush current. 961001EBA2' 9 The products , of T2 reaches Vref H, the IC returns to its MONOSTABLE state. In the case of large value of Cx and
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OCR Scan
TC74HC4538AP TC74HC4538AF TC74HC4538AFN TC74HC4538AFT z710 2T1-2T2 LCD 16PIN 1T223 4538B TC74HC4538AP/AF/AFN/AFT TC74HC4538A

2T1-2T2

Abstract: 4538B B CD Q Q _r H H _TL "LT OUTPUT ENABLE X L H L H INHIBIT H X H L H INHIBIT L ~L H _TL "LT OUTPUT , , there will be some possibility of damaging the IC by rush current or latch-up. If the capacitance of the , damage to the IC is avoided. The maximum value of forward current through the parasitic diode is  , external clamping diode is needed to protect the IC from rush current. 980508EBA2' 0 The products , operation. That means, after triggering, when the voltage level of T2 reaches Vref H, the IC returns to its
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OCR Scan
16PIN DIP16-P-300-2 75MAX 735TYP 705TYP SOL16-P-150-1

IC tl 077

Abstract: transistor BC 245 Conditions BVCBO 50 - - V IC=100uA, IE=0 BVCEO 45 - - V IC=1mA, IB=0 BVEBO 6 - - V IE=10uA, IC=0 ICBO - - 15 nA VCB=30V, IE=0 VBE(on)1 0.58 - 0.7 V IC=2mA, VCE=5V VBE(on)2 - - 0.77 V IC=10mA, VCE=5V *VBE , : 45V · High DC Current Gain: 110-800 at IC=2mA Absolute Maximum Ratings · Maximum Temperatures , . 6 V IC Collector Current
Hi-Sincerity Microelectronics
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HBC547 IC tl 077 transistor BC 245 HE6418
Abstract: H A R A C TER IST IC S Characteristic Thermal Resistance - Junction to Case - Junction to Ambient , 0.090 0.090 0.063 M J 0.063 TL 260 °C mm in c © M O TO R O LA IN C., 1989 J I , ?2S4 GOTIETS 1 T-33-/7 Max Unit EL EC T R IC A L C H A R A C TER IST IC S (Tc = 25°C unless otherwise noted) Characteristics OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage (IC = 30 mAdc, Ig = , ) Collector-Emitter Saturation Voltage (IC = 1.0 Ade, lB = 0.2 Ade) Base-Emltter On Voltage (IC = 1.0 Ade, V c e = 10 -
OCR Scan
MJD5731/D MJD5731 MJE5731 MJD47

AT-30533

Abstract: , Ic = 5 mA Freq GHz 0.512] 0.9 F ·H I 1 nun dB 1.1 1.2 1.5 r OPT Mag 0.77 0.71 0.60 0.51 , 7 5 6 2 7 5 1 2 AT-30511, AT-30533 A bsolute Maximum Ratings Symbol Vebo VcBO VcEO Ic PT Tj , Min Typ Max P a ra m e te rs and T e s t C o n d itio n s Noise Figure VC E = 2.7 V, Ic = 1mA Associated Gain V ce = 2.7 V , Ic = 1 mA Forward Current Transfer Ratio Collector Cutoff Current Emitter Cutoff Current f = 0.9 GHz f = 0.9 GHz V ce = 2.7 V Ic = 1 mA Vcb = 3V veb U nits dB dB \iA Min
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AT-30511-BLK AT-30511-TR1 AT-30533-BLK AT-30533-TR1 5963-1861E 5965-8918E
Abstract: n -i ic ^ 2T1 :i4 2T2 13 2CD 12 2A ] 1 1 2B ] 10 2Q :9 (TOP V IE W ) 2Q Ex te rn a l resistor , . V nih = V nil = 28 % Vcc (Min.) · Output D rive C a p a b ility . 10 LST TL Loads · Sym m , OUTPUT ENABLE INHIBIT INHIBIT OUTPUT ENABLE RESET H H NOTE _TL ~LT "L X _TL "LT L H X , ly, there w ill be some possibility of dam aging the IC by rush current or latch-up. I f the , atically lim ited and damage to the IC is avoided. The m axim um valu e of forward current through the p -
OCR Scan
6-P-300-2 6-P-300-1 TSSOP16-P-0044-0 C4538AP/AF/AFN/AFT 6-P-150-1 505TVP

F5211

Abstract: MMBR521L IC = -7 0 mA HIGH-FREQUENCY TRANSISTOR PNP SILICON · · High Power Gain - Gpe (matched) = 11 dB , , f = 1.0 GHz) Noise Figure - Minimum (V c e = -6 .0 v, IC = -5 .0 mA, f = 500 MHz) (Vc e = -6 .0 V, l c = - 5 .0 mA, f = 1.0 GHz) (V c e = -6 .0 V, IC = - 5 .0 mA, f = 1.0 GHz) MMBR521LT1 MMBR521LT1 , 20 30 40 50 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Noise , MOTOROLA RF DEVICE DATA MMBR521LT1»MRF521»MRF5211LT1 2-39 VCE (Vdc) -6 .0 ic (mA) -5 .0 f (MHz
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F5211 MMBR521L 24 LC 0261 MRF5211
Abstract: 10A TL = 90°C 275A 8.3ms, half sine t Min. Typ. Forward Voltage VF IR , #11; .039 .047 .006 .017 .030 .041 .065 .077 .148 .169 .110 .126 .250 .264 .065 .077 .207 , vision: C w w w.m c c se m i.c om 1 of 3 2 0 1 3 /0 1 /2 9 MCC MBR1045ULPS RATING AND , Characteristics w w w.m c c se m i.c om Re vision: C 2 of 3 2 0 1 3 /0 1 /2 9 MCC TM Micro , m i.c om Re vision: C 3 of 3 2 0 1 3 /0 1 /2 9 - -
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1045UL

M74HC4538B1R

Abstract: M74HC4538C1R VCC decreases rapidy, there willbesome possibility of damaging the I.C. with a surge current or , current is automatically limited and damage the I.C. is avoided. The maximum forward current of the , short an external champing diode is required to protect the I.C. from the surge current. FUNCTIONAL , delay time in the I.C. can be ignored, the width of the output pulse tw (out) is as follows : tW(OUT , charged quicky to VCC. This means if CD input goes low, the IC becomes waiting state both in operating
STMicroelectronics
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M54HC4538 M74HC4538 M54HC4538F1R M74HC4538M1R M74HC4538B1R M74HC4538C1R 74HC4538
Abstract: A B S O L U T E M A X IM U M R A T IN G S A N D E L E C T R IC A L /O P T IC A L C H A R A C T E R IS T IC S The absolute maximum ratings and electrical/optical specifications are identical to the , ' LEAD SUBMINIATURE PACKAGE T T j Ü m 161 .4.1.1 151 i '3 3 . " " ' " _ ^ ^ I 077 [1.95 , ) / C ° . i 7 3 ! ! Ì L 5ì 0.69 {17.5} 3.19 (811 3.11 (79» 45 M 1.5) .33 (8.5 J DIA Q TL P 650X -X Q TL P 670X -X TAPE & REEL SPECIFICATIONS I N NO CO M PO N ENTS NO CO M PO N ENTS CO M PON ENTS - -
OCR Scan
MV5753 MV5X123 MV5X124A TLP91X-X RS-481
Abstract: 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -350mV at Ic = , symbol : EW 0.77 0.65 0.65 1.3 (1) Base (2) Emitter (3) Collector zAbsolute maximum ratings , IC Collector current -2 ICP 400 PC Power dissipation Junction temperature Tj 150 Range of storage , Code Basic ordering unit (pieces) 2SB1733 Taping TL 3000 zElectrical characteristics (Ta , -100 -350 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=-10µA IC=-1mA IE=-10µA VCB=-30V VEB ROHM
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100MH

M74HC4538B1R

Abstract: 74HC4538 VCC decreases rapidy, there willbesome possibility of damaging the I.C. with a surge current or , current is automatically limited and damage the I.C. is avoided. The maximum forward current of the , short an external champing diode is required to protect the I.C. from the surge current. FUNCTIONAL , delay time in the I.C. can be ignored, the width of the output pulse tw (out) is as follows : tW(OUT , charged quicky to VCC. This means if CD input goes low, the IC becomes waiting state both in operating
STMicroelectronics
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capacitor 0.01 micro farads M54/74HC4538 P027A M54/M74HC4538
Abstract: 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -180mV at IC= -1A / IB= -50mA 0.2 1.7 2.1 0.2 0.17 0~0.1 0.15Max. 0.77 0.65 0.65 1.3 zPackaging specifications Package Type Code Basic ordering unit (pieces) 2SB1730 Taping TL 3000 ROHM , VEBO IC ICP PC Tj Tstg Limits -15 -12 -6 -2 -4 400 150 -55 to +150 Unit V V V A A mW °C °C , . - - - -100 -100 -180 680 - - Unit V V V nA nA mV - MHz pF IC=-10µA IC=-1mA IE=-10µA VCB=-15V VEB ROHM
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DM 0265 R

Abstract: C 3807 transistor above 25°C Operating and Storage Junction Tem perature Range Sym bol VCEO Ve b ic Pd 20 0.16 Pd 1.75 , /W °C/W °c Tl (1) These ratings are applicable w hen surface mounted on the m inim um pad size , S ym bol Min Typ Max Unit >CES Ie b o _ E L E C T R I C A L C H A R A C T E R IS T IC S (T c , 0.77 084 0.94 1.91 2.28 INCHES MM MAX 0235 0.245 0250 0265 0086 0094 0025 0035 0 038 0 042 0 090 BSC , 5.46 5.21 _ 051 077 0.84 432 369 1.14 034 _ - 3 C A S E 369A-04 V w V z C ase 369-03 m ay
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OCR Scan
DM 0265 R C 3807 transistor dm 0265 ym 238 D44E3 MJD44E3 Y145M 4588SC MJD44E3-1
Abstract: ) 180mV at IC = 1A / IB = 50mA ROHM : TUMT3 0.2 1.7 2.1 0.2 0.17 0~0.1 0.15Max. Abbreviated symbol : FW 0.77 0.65 0.65 1.3 (1) Base (2) Emitter (3) Collector !External dimensions , VCEO 12 Collector-emitter voltage VEBO 6 Emitter-base voltage IC 2 Collector current ICP 4 PC 400 Power , MHz pF Conditions IC=10µA IC=1mA IE=10µA VCB=15V VEB=6V IC=1A, IB=50mA VCE=2V, IC=200mA VCE=2V, IE , ordering unit (pieces) Taping TL 3000 1/2 2SD2700 Transistors !Electrical characteristic curves ROHM
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Abstract: is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA ROHM : TUMT3 (1) 0.2 0.85Max. 0.17 0~0.1 0.15Max. Abbreviated symbol : FL 0.77 2.0 (3) 0.65 0.65 1.3 (1)Base (2)Emitter (3)Collector zAbsolute maximum ratings (Ta=25°C) Limits Symbol VCBO -30 VCEO -30 VEBO -6 IC , Basic ordering unit (pieces) 2SB1731 Taping TL 3000 zElectrical characteristics (Ta=25°C) Parameter , Unit V V V nA nA mV - MHz pF Conditions IC=-10µA IC=-1mA IE=-10µA VCB=-30V VEB=-6V IC=-1A, IB ROHM
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