NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: IBM11D2360ED2M x 36 QC10/10 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M IBM11E2360ED2M x 36 QC10/10 QC10/10, 5.0V, Au . IBM11D4360B IBM11D4360B IBM11D8360B IBM11D8360B IBM11E4360B IBM11E4360B IBM11E8360B IBM11E8360B 4M/8M x 36 DRAM Module Features · High Performance CMOS process · Single 5V, ± 0.5V Power Supply · All inputs & outputs are fully TTL & CMOS compatible · Fast Page Mode access cycle · Refresh Modes: RAS-Only, CBR and Hidden Refresh · 2048 refresh cycles distributed across 32ms · 11/11 Addressing (Row/Column) · Optimized for use in byte-write parity applications · Au ... | Original |
23 pages, |
8mx32 simm 72 pin IBM11D2360ED2M QC10/10 IBM11E2360ED2M IBM11D4360B IBM11D8360B IBM11E4360B IBM11E8360B IBM11D2360ED2M abstract |
|
|||
| Abstract: IBM11D2360ED2M x 36 QC10/10 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M IBM11E2360ED2M x 36 QC10/10 QC10/10, 5.0V, Au . IBM11D1360E IBM11D1360E IBM11D2360E IBM11D2360E IBM11E1360E IBM11E1360E IBM11E2360E IBM11E2360E 1M/2M x 36 DRAM Module Features · 72-Pin Single-In-Line Memory Module · Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns 18ns tAA Access Time From Address 30ns 35ns tRC Cycle Time · High Performance CMOS process · Single 5V, ± 0.5V Power Supply · All inputs & outputs are fully TTL & CMOS compatible · Low ... | Original |
20 pages, |
IBM11D2360ED2M QC10/10 IBM11E2360ED2M IBM11D1360E IBM11D2360E IBM11E1360E IBM11E2360E IBM11D2360ED2M abstract |
|
|||
| Abstract: IBM11D2360ED2M x 36 QC10/10 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M IBM11E2360ED2M x 36 QC10/10 QC10/10, 5.0V, Au . IBM11D1360Q IBM11D1360Q IBM11D2360Q IBM11D2360Q IBM11E1360Q IBM11E1360Q IBM11E2360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features · Single 5V, ± 0.5V Power Supply · All inputs & outputs are fully TTL & CMOS compatible · Low active current dissipation · Fast Page Mode access cycle · Refresh Modes: RAS-Only, CBR, and Hidden Refresh · 1024 refresh cycles distributed across 16ms · 10/10 Addressing (Row/Column) · Optimized for use in byte-write parity ... | Original |
21 pages, |
IBM11D2360ED2M QC10/10 IBM11E2360ED2M IBM11D1360Q IBM11D2360Q IBM11E1360Q IBM11E2360Q IBM11D2360ED2M abstract |
|
|||
| Abstract: IBM11D2360ED2M x 36 QC10/10 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M IBM11E2360ED2M x 36 QC10/10 QC10/10, 5.0V, Au . IBM11D4360B IBM11D4360B IBM11D8360B IBM11D8360B IBM11E4360B IBM11E4360B IBM11E8360B IBM11E8360B 4M/8M x 36 DRAM Module Features · 72-Pin JEDEC Standard Single-In-Line Memory Module · Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns 35ns tRC Cycle Time · High Performance CMOS process · Single 5V, ± 0.5V Power Supply · All inputs & outputs are fully TTL & CMOS compatible ... | Original |
23 pages, |
IBM11D2360ED2M QC10/10 IBM11E2360ED2M IBM11D4360B IBM11D8360B IBM11E4360B IBM11E8360B IBM11D2360ED2M abstract |
|
|||
| Abstract: IBM11D2360ED2M x 36 QC10/10 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M IBM11E2360ED2M x 36 QC10/10 QC10/10, 5.0V, Au . IBM11D1365E IBM11D1365E IBM11D2365E IBM11D2365E 1M/2M x 36 DRAM Module Features · 72-Pin Single-In-Line Memory Module · Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns 18ns tAA Access Time From Address 30ns 35ns tRC Cycle Time 104ns 124ns thpc EDO Mode Cycle Time 25ns · High Performance CMOS process · Single 5V, ± 0.5V Power Supply · All inputs & outputs are fully TTL & ... | Original |
21 pages, |
IBM11D2360ED2M QC10/10 IBM11E2360ED2M IBM11D1365E IBM11D2365E IBM11D2360ED2M abstract |
|
|||