I27131 E78996 IRKT41/16 I27900 IRKT57/16 - Datasheet Archive

 

IRK.41, .56 SERIES NEW ADD-A-pakTM Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Electrically isolated: DBC

 

Bulletin I27131 I27131 rev. C 09/97 IRK.41, .56 SERIES NEW ADD-A-pakTM Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Electrically isolated: DBC base plate 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly Auxiliary cathode terminals for wiring convenience High surge capability Wide choice of circuit configurations Large creepage distances UL E78996 E78996 approved 45 A 60 A Description These IRK series of NEW ADD-A-paks use power diodes and thyristors in a variety of circuit configurations. The semiconductor chips are electrically isolated from the base plate, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or AC controllers. These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, and temperature and motor speed control circuits. Major Ratings and Characteristics Parameters IRK.41 IRK.56 Units 45 60 A IO(RMS) (*) 100 135 A ITSM @ 50Hz 850 1310 A IFSM @ 60Hz 890 1370 A @ 50Hz 3.61 8.50 KA2s @ 60Hz 3.30 7.82 KA2s 36.1 85.0 KA 2s IT(AV) or IF(AV) @ 85°C 2 I t I2t VRRM range TSTG TJ 400 to 1600 V - 40 to 125 o - 40 to125 o C C (*) As AC switch. www.irf.com 1 IRK.41, .56 Series Bulletin I27131 I27131 rev. C 09/97 ELECTRICAL SPECIFICATIONS Voltage Ratings VRRM , maximum repetitive peak reverse voltage V 04 400 500 400 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 Type number Voltage Code - 1600 1700 1600 IRK.41/ .56 VRSM , maximum VDRM , max. repetitive IRRM non-repetitive peak off-state voltage, IDRM peak reverse voltage gate open circuit 125°C V V mA 15 On-state Conduction Parameters IRK.41 IRK.56 current (Thyristors) 45 60 180 o conduction, half sine wave, Maximum average 45 60 TC = 85oC IO(RMS) Max. continuous RMS on-state current. As AC switch 100 135 ITSM Max. peak, one cycle 850 1310 or non-repetitive on-state 890 1370 t=8.3ms reapplied IFSM or forward current 715 1100 t=10ms 100% VRRM 750 1150 t=8.3ms reapplied IT(AV) IF(AV) Units Conditions Max. average on-state forward current (Diodes) I(RMS) A or I(RMS) t=10ms No voltage Sinusoidal half wave, Initial TJ = TJ max. 940 t=8.3ms no voltage reapplied 3.61 8.56 t=10ms No voltage 7.82 2.56 Max. I2t for fusing t=10ms T J = 25oC, 1520 3.30 I 2t 1450 985 6.05 t=8.3ms reapplied 2 KA s t=10ms 100% VRRM Initial T J = TJ max. 2.33 5.53 4.42 10.05 t=10ms T J = 25oC, 4.03 9.60 t=8.3ms no voltage reapplied 36.1 85.6 0.88 0.85 voltage (2) 0.91 0.88 rt Max. value of on-state 5.90 3.53 5.74 3.41 VTM slope resistance (2) Max. peak on-state or 1.81 1.54 I2t Max. I2t for fusing (1) VT(TO) Max. value of threshold VFM forward voltage di/dt Max. non-repetitive rate of rise of turned on 150 KA2s V m V A/µs t=0.1 to 10ms, no voltage reapplied TJ = TJ max Low level (3) High level (4) Low level (3) TJ = TJ max High level (4) ITM = x IT(AV) TJ = 25oC IFM = x IF(AV) TJ = 25oC, from 0.67 V DRM, ITM = x I T(AV), I = 500mA, g tr < 0.5 µs, tp > 6 µs current IH Max. holding current 200 IL Max. latching current 400 (1) I2t for time tx = I2t x tx t=8.3ms reapplied TJ = 25o C, anode supply = 6V, mA resistive load, gate open circuit TJ = 25oC, anode supply = 6V,resistive load (2) Average power = VT(TO) x IT(AV) + r t x (IT(RMS)2 (3) 16.7% x x IAV < I < x IAV (4) I > x IAV 2 www.irf.com IRK.41, .56 Series Bulletin I27131 I27131 rev. C 09/97 Triggering Parameters PGM IRK.41 Max. peak gate power PG(AV) Max. average gate power IGM Max. peak gate current IRK.56 10 10 2.5 2.5 2.5 2.5 -VGM Max. peak negative 4.0 Max. gate voltage mA T J = - 40°C T J = 25°C T J = 125°C 80 Max. gate voltage T J = - 40°C T J = 25°C T J = 125°C 270 150 Max. gate current Anode supply = 6V resistive load Anode supply = 6V resistive load 0.25 V TJ = 125 C, rated VDRM applied 6 mA TJ = 125oC, rated VDRM applied o that will not trigger IGD A 1.7 required to trigger VGD W V 2.5 required to trigger IGT Conditions 10 gate voltage VGT Units Max. gate current that will not trigger Blocking Parameters IRK.41 IRRM IDRM off-state leakage current IRK.56 Units Conditions Max. peak reverse and 15 mA TJ = 125 oC, gate open circuit at VRRM, VDRM 2500 (1 min) VINS 50 Hz, circuit to base, all terminals RMS isolation voltage V 3500 (1 sec) dv/dt Max. critical rate of rise of off-state voltage (5) shorted 500 V/µs T J = 125oC, linear to 0.67 VDRM, gate open circuit (5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16 IRKT41/16 S90. Thermal and Mechanical Specifications Parameters IRK.41 IRK.56 TJ Junction operating temperature range Storage temp. range - 40 to 125 Conditions - 40 to 125 Tstg Units °C RthJC Max. internal thermal resistance, junction 0.23 0.20 to case Per module, DC operation K/W RthCS Typical thermal resistance 0.1 Mounting surface flat, smooth and greased. Flatness < 0.03 mm; roughness< 0.02 mm to heatsink 5 busbar 3 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound case to heatsink T wt Mounting torque ± 10% Approximate weight Case style www.irf.com 83 (3) TO-240AA Nm g (oz) JEDEC 3 IRK.41, .56 Series Bulletin I27131 I27131 rev. C 09/97 R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices Sine half wave conduction Rect. wave conduction 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o IRK.41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34 IRK.56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 Units 0.28 °C/W Outlines Table IRKT./. (*) IRKH./. (*) Faston tab. 2.8 x 0.8 6.1 ± 0.3 30 ± 0.1 (1.18 ± 0.04) Pitch 4.0 ± 0.2 (0.16 ± 0.01) 3 1 4 5 2 (0.24 ± 0.01) 24 ± 0.5 (0.94 ± 0.02) 29 ± 0.5 (1.13 ± 0.02) 30 ± 0.1 (1.18 ± 0.04) 30 ± 0.5 (1.18 ± 0.02) 20.5 ± 0.75 (0.81 ± 0.03) 7 6 3 1 4 5 2 6.3 ± 0.3 (0.25 ± 0.01) 20 ± 0.5 (0.79 ± 0.02) 20 ± 0.5 (0.79 ± 0.02) 20 ± 0.5 (0.79 ± 0.02) 20 ± 0.5 (0.79 ± 0.02) 15 ± 0.5 (0.59 ± 0.02) 15.5 ± 0.5 (0.61 ± 0.02) (0.11 x 0.03) Pitch 4.0 ± 0.2 (0.16 ± 0.01) 6.1 ± 0.3 6.3 ± 0.3 (0.25 ± 0.01) 20.5 ± 0.75 (0.81 ± 0.03) 18 REF. (0.71) Screws M5 x 0.8 Faston tab. 2.8 x 0.8 (0.11 x 0.03) 29 ± 0.5 (1.13 ± 0.02) 30 ± 0.5 (1.18 ± 0.02) Screws M5 x 0.8 15.5 ± 0.5 (0.61 ± 0.02) (0.24 ± 0.01) 24 ± 0.5 5.8 ± 0.25 (0.94 ± 0.02) (0.23 ± 0.01) 18 REF. (0.71) 15 ± 0.5 (0.59 ± 0.02) 80 ± 0.3 (3.15 ± 0.01) 80 ± 0.3 (3.15 ± 0.01) 92 ± 0.5 (3.62 ± 0.02) 92 ± 0.5 (3.62 ± 0.02) IRKL./. (*) 30 ± 0.1 (1.18 ± 0.04) 24 ± 0.5 (0.94 ± 0.02) 6.1 ± 0.3 7 6 3 1 2 (0.24 ± 0.01) 6.3 ± 0.3 (0.25 ± 0.01) 20.5 ± 0.75 (0.81 ± 0.03) Faston tab. 2.8 x 0.8 (0.11 x 0.03) 29 ± 0.5 (1.13 ± 0.02) 30 ± 0.5 (1.18 ± 0.02) 15.5 ± 0.5 (0.61 ± 0.02) Pitch 4.0 ± 0.2 (0.16 ± 0.01) 18 REF. (0.71) Screws M5 x 0.8 20 ± 0.5 (0.79 ± 0.02) 20 ± 0.5 (0.79 ± 0.02) 15 ± 0.5 (0.59 ± 0.02) 80 ± 0.3 (3.15 ± 0.01) 92 ± 0.5 (3.62 ± 0.02) All dimensions in millimeters (inches) (*) For terminals connections, see Circuit configurations Table NOTE: To order the Optional Hardware see Bulletin I27900 I27900 4 www.irf.com IRK.41, .56 Series Bulletin I27131 I27131 rev. C 09/97 Circuit Configurations Table IRKT IRKH IRKL (1) ~ (1) ~ (1) ~ + (2) + (2) + (2) (3) (3) (3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 (4) (5) K2 G2 (7) (6) Ordering Information Table Device Code T 56 1 2 / 16 S90 3 IRK.57 types With no auxiliary cathode 6 IRK 4 5 13.8 (0.53) - Module type 2 - Circuit configuration (See Circuit Configuration table) 3 - Current code * * 4 - Voltage code (See Voltage Ratings table) 5 - dv/dt code: 4 1 * Available with no auxiliary cathode. To specify change: 56 to 57 S90 = dv/dt 1000 V/µs e.g. : IRKT57/16 IRKT57/16 etc. 130 IRK.41. Series R thJC (DC) = 0.46 K/W 120 Conduction Angle 100 30° 60° 90° 90 120° 180° 80 0 10 20 30 40 50 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) No letter = dv/dt 500 Vµs 110 41 to 42 130 IRK.41. Series R thJC (DC) = 0.46 K/W 120 110 Conduction Period 30° 100 60° 90° 120° 90 180° DC 80 0 20 40 60 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 80 Fig. 2 - Current Ratings Characteristics www.irf.com 5 IRK.41, .56 Series 70 180° 120° 90° 60° 30° 60 50 Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) Bulletin I27131 I27131 rev. C 09/97 RMS Limit 40 30 Conduction Angle 20 IRK.41. Series Per Junction T J = 125°C 10 0 0 10 20 30 50 40 100 DC 180° 120° 90° 60° 30° 80 60 RMS Limit 40 Conduction Period IRK.41. Series Per Junction T J = 125°C 20 0 0 20 40 60 80 Average On-state Current (A) Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C 700 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 600 500 400 IRK.41. Series Per Junction 300 1 10 900 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 800 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J 125°C = No Voltage Reapplied Rated V RRM Reapplied 800 700 600 500 400 IRK.41. Series Per Junction 300 0.01 100 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 140 R thSA K/W /W W K 0.3 0. 5 60 K/ 40 1.5 80 elt a W-D = 0 .1 K/ W K/ 100 0 .7 180° 120° 90° 60° 30° 120 1 K/W 2K /W 60 R Maximum Total On-state Power Loss (W) 1 Pulse Train Duration (s) Conduction Angle 3 K/ W 40 IRK.41. Series Per Module T J = 125°C 20 5 K/W 0 0 20 40 60 80 Total RMS Output Current (A) 100 0 20 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-state Power Loss Characteristics 6 www.irf.com IRK.41, .56 Series Bulletin I27131 I27131 rev. C 09/97 A R t hS 2 0. 300 -D 0. 5 150 K/ W R 0. 7 a el t 200 K/ W K /W 180° (Sine) 180° (Rect) .1 0.3 250 =0 W K/ Maximum Total Power Loss (W) 350 K /W 1K /W 100 2 x IRK.41. Series Single Phase Bridge Connected T J = 125°C 50 1 .5 K/ W 0 0 20 40 60 80 0 100 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total Output Current (A) Fig. 8 - On-state Power Loss Characteristics 500 S R th A = 0.1 400 2 0. W K/ W K/ 350 300 0. 3K 250 0. 5 200 0 .7 150 3 x IRK.41. Series Three Phase Bridge Connected T J = 125°C 100 50 /W R 120° (Rect) ta el -D Maximum Total Power Loss (W) 450 K /W K/ W 1 K/ W 0 0 20 40 60 80 100 120 Total Output Current (A) 0 140 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) 130 IRK.56. Series R thJC (DC) = 0.40 K/W 120 110 Conduction Angle 100 90 30° 60° 80 90° 120° 180° 70 0 10 20 30 40 50 60 70 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Fig. 9 - On-state Power Loss Characteristics 130 IRK.56. Series R thJC (DC) = 0.40 K/W 120 110 Conduction Period 100 90 90° 80 30° 60° 120° 180° DC 70 0 20 40 60 80 100 Average On-state Current (A) Average On-state Current (A) Fig. 10 - Current Ratings Characteristics Fig. 11 - Current Ratings Characteristics www.irf.com 7 IRK.41, .56 Series 90 180° 120° 90° 60° 30° 80 70 60 RMS Limit 50 40 30 Conduction Angle 20 IRK.56. Series Per Junct ion T J = 125°C 10 0 0 10 20 30 40 60 50 120 Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) Bulletin I27131 I27131 rev. C 09/97 DC 180° 120° 90° 60° 30° 100 80 60 RMS Limit Conduction Period 40 IRK.56. Series Per Junction T J = 125°C 20 0 0 20 Average On-state Current (A) 900 800 700 600 IRK.56. Series Per Junction 500 1 10 1400 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 1000 80 100 Fig. 13 - On-state Power Loss Characteristics At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1100 60 Average On-state Current (A) Fig. 12 - On-state Power Loss Characteristics 1200 40 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125°C No Voltage Reapplied Rated V RRM Reapplied 1200 1000 800 600 IRK.56. Series Per Junction 400 0.01 100 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) 1 Pulse Train Duration (s) Fig. 15 - Maximum Non-Repetitive Surge Current Fig. 14 - Maximum Non-Repetitive Surge Current W SA R th =0 /W .1 K 1K /W 1 .5 K/ W 2 K/ W Conduction Angle 60 aR elt 80 -D 0. 7K /W 100 K/ 120 W K/ 140 W K/ K/ W 5 0. 160 4 0. 180° 120° 90° 60° 30° 180 0 .2 0 .3 Maximum Total On-state Power Loss (W) 200 IRK.56. Series Per Module T J = 125°C 40 20 4 K/W 0 0 20 40 60 80 100 120 Total RMS Output Current (A) 140 0 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 16 - On-state Power Loss Characteristics 8 www.irf.com IRK.41, .56 Series Bulletin I27131 I27131 rev. C 09/97 400 SA R th 150 2 x IRK.56. Series Single Phase Bridge Connected T J = 125°C 50 /W R 200 100 a el t -D 250 K/ W 0. 3K W K/ 180° (Sine) 180° (Rect) 300 0 .1 0. 2 350 = Maximum Total Power Loss (W) 450 0 .5 K /W 0.7 K/W 1 K/ W 2 K/W 0 0 20 40 60 80 100 120 140 0 Total Output Current (A) 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 17 - On-state Power Loss Characteristics R th 500 SA = 3 x IRK.56. Series Three Phase Bridge Connected T J = 125°C 100 R 200 0.3 ta el -D 300 K/ W W 120° (Rect) K/ 0. 2 400 0 .1 Maximum Total Power Loss (W) 600 K/ W 0.5 K/ W 0. 7 K /W 1 K /W 0 0 20 40 60 80 100 120 140 160 180 0 Total Output Current (A) 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperat ure (°C) Fig. 18 - On-state Power Loss Characteristics 1000 Instantaneous On-state Current (A) Instantaneous On-state Current (A) 1000 100 T J= 25°C T J= 125°C 10 IRK.41. Series Per Junction 1 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Fig. 19 - On-state Voltage Drop Characteristics www.irf.com 100 TJ = 25°C TJ = 125°C 10 IRK.56. Series Per Junction 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Fig. 20 - On-state Voltage Drop Characteristics 9 IRK.41, .56 Series 500 450 IRK.41. Series IRK.56. Series T J = 125 °C Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) Bulletin I27131 I27131 rev. C 09/97 I TM = 200 A 100 A 400 350 50 A 300 250 20 A 200 10 A 150 100 10 20 30 40 50 60 70 80 110 100 A 90 50 A 80 20 A 70 10 A 60 50 IRK.41. Series IRK.56. Series T J = 125 °C 40 30 10 90 100 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/dt (A/µs) Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 21 - Recovery Charge Characteristics Transient Thermal Impedanc e Z thJC (K/W) I TM = 200 A 100 Fig. 22 - Recovery Current Characteristics 1 Steady State Value: R thJC = 0.46 K/W R thJC = 0.40 K/W (DC Operation) IRK.41. Series IRK.56. Series 0.1 Per Junction 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 23 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 µs, t p >= 6 µs b)Recommended load line for = 6 µs (1) (2) (3) (4) PGM = PGM = PGM = PGM = 100 W, tp = 500 µs 50 W, tp = 1 ms 20 W, tp = 25 ms 10 W, tp = 5 ms (a) (b) 1 TJ = -40 °C TJ = 125 °C TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 IRK.41./.56. Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 24 - Gate Characteristics 10 www.irf.com