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HIGHEFFPMPDOCK-REF Texas Instruments High Efficiency Portable Media Player (PMP) Docking Station ri Buy
RI-UHF-IC116-00 Texas Instruments PACKAGED UHF IC FOR PCB TRACKING APPLICATION 6-USON -40 TO 125 ri Buy
RI-UHF-STRAP-08 Texas Instruments UHF GEN2 STRAP 1-RFIDS ri Buy

High Energy Devices

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Abstract: Surge Arresters Two Electrode High Voltage Surge Arresters Two Electrode Mini Surge Arresters Two Electrode Energy Transfer Switches Three Electrode Surge Arresters Three Electrode Non-Radioactive Surge Arresters High Energy Devices High-Speed, High-Current Surge Protectors Two Electrode High-Energy Spark Gaps High Energy Triggered Spark Gaps High-Speed Transient Surge Protectors High-Energy Spark Gap Devices , applications include: Home Medical Devices Plant Monitoring Equipment Security / Alarm Systems Utility ... OCR Scan
datasheet

10 pages,
814.38 Kb

REED RELAY clare gyrator CUP V 60004 cp clare reed relay 24V 770381 CP Clare RELAY 24v hg series reed cp clare reed relay CYG22XX CYG22XX abstract
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Abstract: Surge Arresters Two Electrode High Voltage Surge Arresters Two Electrode Mini Surge Arresters Two Electrode Energy Transfer Switches Three Electrode Surge Arresters Three Electrode Non-Radioactive Surge Arresters High Energy Devices High-Speed, High-Current Surge Protectors Two Electrode High-Energy Spark Gaps High Energy Triggered Spark Gaps High-Speed Transient Surge Protectors High-Energy Spark Gap Devices , America Only) ALABAMA El Tech Inc. Tel: 205-464-0599 Fax: 205-464-9641 ARIZONA Western High Tech Marketing ... OCR Scan
datasheet

11 pages,
509.31 Kb

REED RELAY clare cUP clare reed relays clare relay cup cp clare cup reed relay asian power device hg series reed mov 250v REED RELAY clare cp clare 5v reed relay CP Clare RELAY cup cp clare reed relay IAD110P IAD110P IAD110P abstract
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Abstract: Capacitors Line for High Energy Applications These are high energy devices typically used for filtering , Capacitors . . . . . . . . . . . . . . . . . 8 European High Voltage MLC's . . . . . . . . . . . . 9 , . . . .14 Margin Chips SLC (Border Caps) . . . . . . . . 15 Newly Added High Voltage Chips . . . . , . . . . . . . . . . 19 TIMING DEVICES Dual Cap SLC . . . . . . . . . . . . . . . . . . . . . . , /capacitor chip in a standard 0603 package. Through a new truly integrative process allowing for high ... Original
datasheet

48 pages,
1085.03 Kb

laptop motherboard resistors IEC1000-4-5 AVX smd film capacitors CF TRANSISTOR SMD catalog kt 8015 ic laptop motherboard capacitor 100mF 25V smd pin configuration transistor 5610 SMD CAPACITOR 1206 2.2Mf 16V smd code W2F capacitor 10mf 16v w2f smd datasheet abstract
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Abstract: CAPACITORS Adds TPC Power Capacitors Line for High Energy Applications These are high energy devices , energy needs of a given application. The QX and BY series of suppression devices are metallized , MLC . . . . . . . . 7 Tip & Ring Capacitors . . . . . . . . . . . . . . . . . 8 European High , Added High Voltage Chips . . . . . . . . 16 TPC Disc Capacitors . . . . . . . . . . . . . . . . . 17 , Chip Film . . . . . . . . . . . . . . . . . 19 TIMING DEVICES Dual Cap SLC . . . . . . . . . . . ... Original
datasheet

48 pages,
1065.83 Kb

capacitors 4v 680mf capacitor 16v 2200 datasheet elco w2f 48 AVX 9156 8015 56 PIN ELCO Connector IEC1000-4-5 laptop motherboard resistors data sheet for all smd components W2F 38 PIN ELCO Connector ic laptop motherboard smd transistor W2F 56 smd code W2F datasheet abstract
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Abstract: Electrode Non-Radioactive Surge Arresters Two Electrode High Voltage Surge Arresters Two Electrode Mini Surge Arresters Two Electrode Energy Transfer Sw itches Three Electrode Surge Arresters Three Electrode Non-Radioactive Surge Arresters High Energy Devices High-Speed, High-Current Surge Protectors Two Electrode High-Energy Spark Gaps High Energy Triggered Spark Gaps High-Speed Transient Surge Protectors High-Energy Spark Gap Devices Microwave Noise Tubes & Noise Sources CPCIare C O R P O R A T IO N Visit vs at ... OCR Scan
datasheet

18 pages,
1031.95 Kb

cp clare reed relay CYG20XX CYG20XX abstract
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Abstract: High-reliability gas tube surge protection components available in two and three element designs; high energy , high voltage lines. Isolation provides the required signal coupling w hile insuring safety to personnel , T he sen so rs are galv an ically iso lated to pro v id e a high voltage iso latio n barrier between , begins to go high until a current equal in m agnitude to I 2 is injected into the inverting node of the , 10 is well suited for high speed modem applications. current in the LED is established. The ... OCR Scan
datasheet

11 pages,
4925.61 Kb

SWPS relay, reed cp clare reed relay clare reed relays 0-10v to 4-20ma lm358 4-20mA cp clare relay mercury wetted datasheet abstract
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Abstract: ) 5 4 6 -547 CPCIare^ ^ ^ ^ H CORPORATION SELECTION GUIDE High Energy Devices Product , Logic and Power Systems *3750 Vms I/O Isolation · Optically isolated I/O · Zero-cross Detection · High , and Power Systems · 3750 VfiM S I/O Isolation · Optically Isolated I/O · Zero-cross Detection · High , and Power Systems ·3 7 5 0 V fiM S I/O Isolation · Optically Isolated 1/0 ·Zero-cross Detection ·High , Form C 1C ATE4 High Reliability 1A ATE6 High Voltage 1A ATE7 Low Coil Power 1A C o n ta ct ... OCR Scan
datasheet

27 pages,
902.26 Kb

STD75 cp clare cup reed relay CP Clare RELAY CP Clare RELAY lx 800 EMIT-3020 REED RELAY clare MRB REED RELAY clare cUP REED RELAY clare cp 184-276V cp clare reed relay clare relay cup cp clare DSS4 CP Clare RELAY cup datasheet abstract
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Abstract: Surge Arresters Two Electrode High Voltage Surge A rresters Two Electrode Mini Surge Arresters Two Electrode Energy Transfer Sw itches Three Electrode Surge A rresters Three Electrode Non-R adioactive Surge A rresters High Energy Devices H igh-Speed, High-C urrent Surge Protectors Two Electrode H igh-E nergy S park Gaps High Energy Triggered S park Gaps H igh-Speed Transient Surge Protectors H igh-E nergy Spark Gap Devices M icrowave Noise Tubes & Noise Sources CP Claie CORPORATION Visit us at our ... OCR Scan
datasheet

20 pages,
1314.91 Kb

Phototransistor SP 201 cp clare reed relay CP Clare RELAY cup CYG21XX CYG21XX abstract
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Abstract: should be observed when operating with high energy devices. DANGER ! The user is reminded to remove , products described herein are not intended for use in life-support appliances, devices, or systems. , laboratory test environment only. It generates, uses, and can radiate radio frequency energy and has not been tested for compliance with the limits of computing devices pursuant to subpart J of part 15 of , from high voltages 1.1 Key Features of the DMC1500 DMC1500 The DMC1500 DMC1500 has the following features: · ... Original
datasheet

67 pages,
1768.08 Kb

XDS510PP F240 transistor DSP TMS320F240 full bridge unipolar inverter pwm JP202 DMC 1000 three phase pwm using TMS320LF2407 TMS320F240 digital PFC eZdsp LF2407 for switched reluctance motor igbt reference schematics tms320f240 ezdsp DMC1500 DMC1500 DMC1500 abstract
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Abstract: ). 561 TG Legacy Series ­ High energy spark gap devices (345V ­ 60kV , ) . 546 High Energy Gas Discharge Tubes Product Introduction , ) . 552 Sparkgaps ­ Two electrode high energy spark gaps (400V ­ 40kV) . 555 Triggergaps ­ High energy triggered spark gaps (1kV ­ 60kV , .459 ATE41A ATE41A ­ 1-Form-A, High Reliability ... Original
datasheet

633 pages,
7566.14 Kb

LP 8029 prma 1a05 relay clare cup v 10025 8 PIN RELAY 24V dc pla Sensor Ultrasonic 40Khz rx tx CP Clare Prme 15005 CP Clare DSS41A05 cp clare u prma 1a05 CLARE REED RELAY PRMA clare 15005 B CLARE REED RELAY PRMA 1a24 clare prme 15005 datasheet abstract
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Datasheet Content (non pdf)

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Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
capabilities also provide high performance, low voltage Flash solutions that minimize the energy consumed component in the portable product revolution. AMD's Flash memories are the most energy efficient devices constrained by wired applications has driven suppliers of communication devices to design portable products every component within an electronic system is being evaluated for energy efficiency. AMD's low voltage Flash memories are specifically designed to excel in the art of low energy consumption. A primary
www.datasheetarchive.com/files/amd/docs/wcd00000/wcd000e2.htm
AMD 26/05/1999 10.19 Kb HTM wcd000e2.htm
Save - Devices supporting efficient use of energy piezoelectric inverter system Non flammable material is applied for safety High transfer Rotation Sensors Saving energy : Fuel saving by fine control engine and A/T Highly heat-resistant SMR element (180 º C) High Position Sensors Saving energy : For efficient fuel control system
www.datasheetarchive.com/files/panasonic/html/maco/keydevice/p18e/green1.html
Panasonic 07/07/2000 10.46 Kb HTML green1.html
: IGBT High Power / High Voltage Modules for medium voltage drives and traction Switching IGBT Modules for use in high - frequency applications such as inductive Thyristors and Diodes in presspack configuration for use in high current applications such as energy transmission, power supply, drives, welding technologies, and time reducing energy losses. This results in energy savings that benefit not only
www.datasheetarchive.com/files/eupec/gb/1_eupec/gb_1_2_000.htm
eupec 15/04/2004 16.38 Kb HTM gb_1_2_000.htm
standby modes cut energy consumption to a minimum while maintaining high system-level performance. Automatic-sleep and standby modes cut energy consumption to a minimum while maintaining high system-level energy consumption to a minimum while maintaining high system-level performance. The exactly the solution you need. Not only that, these devices feature innovations that help you develop highest reliability (0.35-micron devices). The lowest voltage for full operation: The
www.datasheetarchive.com/files/amd/docs/wcd00000/wcd0007a.htm
AMD 26/05/1999 9.63 Kb HTM wcd0007a.htm
MiniMOS SO-8 Power MOSFETs MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where
www.datasheetarchive.com/files/motorola/design-n/ppd/html/minimos.htm
Motorola 25/11/1996 4.93 Kb HTM minimos.htm
wires and die metalization are typically associated with EOS (slow rise time, high energy) while , high energy). Typically, most ESD damage is only visible through deprocessing and SEM inspection. actually a result of the total energy applied to the device. Externally, the damage will result in open, short or leaking pins. It can also affect the devices functionality. Internally, the result is difference between EOS and electrostatic discharge (ESD) is the rise time of the energy pulse. Rise times
www.datasheetarchive.com/files/motorola/design-n/csic/techsprt/faq/general/eos.htm
Motorola 25/11/1996 4.77 Kb HTM eos.htm
metalization are typically associated with EOS (slow rise time, high energy) while junction degradation, poly melt filaments and contact damage are associated with ESD (fast rise time, high energy). Typically is the direct result of the locally absorbed energy and it's resulting high temperature. total energy applied to the device. Externally, the damage will result in open, short or leaking pins. It can also affect the devices functionality. Internally, the result is typically seen as fused
www.datasheetarchive.com/files/motorola/web/techsprt/faq/general/eos.htm
Motorola 10/02/1997 6.28 Kb HTM eos.htm
metalization are typically associated with EOS (slow rise time, high energy) while junction degradation, poly melt filaments and contact damage are associated with ESD (fast rise time, high energy). Typically is the direct result of the locally absorbed energy and it's resulting high temperature. total energy applied to the device. Externally, the damage will result in open, short or leaking pins. It can also affect the devices functionality. Internally, the result is typically seen as fused
www.datasheetarchive.com/files/motorola/cdcsic2/web/techhelp/faq/general/eos.htm
Motorola 08/03/1998 7.18 Kb HTM eos.htm
, the SOT-223. The STNxNxx devices are n-channel enhancement mode MOSFETs designed to withstand high energy pulses under avalanche mode, making them ideal for application in hard disk drives, DC/DC converters, power supplies and small motor current sensing circuits. Devices of this range. All devices have a drain-source body diode with fast recovery time, making them highly energy and 30V, respectively with on-resistances of 120mW and 60mW. These devices are also
www.datasheetarchive.com/files/stmicroelectronics/stonline/press/magazine/prodnews/6thedi98/pnews6-v1.htm
STMicroelectronics 14/06/1999 4.7 Kb HTM pnews6-v1.htm
The STNxNxx devices are n-channel enhancement mode MOSFETs designed to withstand high energy pulses supplies and small motor current sensing circuits. Devices of this family include the STN3NE06 STN3NE06 STN3NE06 STN3NE06 and on-resistances of 120mW and 60mW. These devices are also available in low threshold versions. 100V products, such as the STN3NE06 STN3NE06 STN3NE06 STN3NE06 and STN2N10L STN2N10L STN2N10L STN2N10L complement the product range. All devices have a drain-source body diode with fast recovery time, making them highly energy efficient in small motor applications. The
www.datasheetarchive.com/files/stmicroelectronics/stonline/press/magazine/prodnews/6thedi98/pnews6.htm
STMicroelectronics 12/11/1999 5.11 Kb HTM pnews6.htm