HZU11B3 |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diodes for Stabilizer |
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HZU11B3 |
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Renesas Technology
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Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.10 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
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HZU11B3-E |
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Renesas Technology
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Diode Zener SINGLE 11.33V 2% 200MW 2URP |
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HZU11B3L |
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Renesas Technology
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SMD, Zener Diode for Low Noise, 11V, Z-diode (operation in reverse direction), Stamping Code:116 |
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HZU11B3L |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diode for Low Noise Application |
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HZU11B3L |
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Renesas Technology
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Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 10.7 to 11.1; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
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HZU11B3L-E |
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Renesas Technology
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Diode Zener SINGLE 10.9V 2% 150MW 2URP |
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