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Part : HYB39S256400AT-7.5 Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 14 Best Price : - Price Each : -
Part : HYB39S256400CT-7.5 Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 34 Best Price : - Price Each : -
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HYB39S256400/800/160DT

Catalog Datasheet MFG & Type PDF Document Tags

PC133 registered reference design

Abstract: HYB39S256400/800/160DT(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary , full page The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM's organized as 4 banks x , are housed in TSOPII-54 packages. INFINEON Technologies 1 7.01 HYB39S256400/800/160DT(L , INFINEON Technologies 2 7.01 HYB39S256400/800/160DT(L) 256MBit Synchronous DRAM 16 M x 16 32 M , -DRAMs INFINEON Technologies 3 7.01 HYB39S256400/800/160DT(L) 256MBit Synchronous DRAM Column
Infineon Technologies
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PC133 registered reference design HYB39S256400/800/160DT 256MB P-TSOPII-54 PC166 PC133 PC100

39S256160DT-7

Abstract: HYB 39S256160DT-7.5 HYB39S256400/800/160DT(L)/DC(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM · High , Command and Controlled Precharge The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM , Technologies 1 2002-04-23 HYB39S256400/800/160DT(L)/DC(L) 256MBit Synchronous DRAM Ordering , BA0, BA1 Bank Select INFINEON Technologies 2 2002-04-23 HYB39S256400/800/160DT(L)/DC(L , ) SPP04126 INFINEON Technologies 3 2002-04-23 HYB39S256400/800/160DT(L)/DC(L) 256MBit
Infineon Technologies
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39S256160DT-7 HYB 39S256160DT-7.5 P-TSOP-54-2 PC100-222 PC133-222 GPX09039 TFBGA-54

PC100-322-620

Abstract: PC133 registered reference design HYB39S256400/800/160CT(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM · High , Precharge Full page burst length (optional) for sequential wrap around The HYB39S256400/800/160CT(L , Technologies 1 8.00 HYB39S256400/800/160CT(L) 256MBit Synchronous DRAM Ordering Information Type , connected BA0, BA1 Bank Select INFINEON Technologies 2 8.00 HYB39S256400/800/160CT(L , Pinout for x4, x8 & x16 organised 256M-DRAMs INFINEON Technologies 3 8.00 HYB39S256400/800
Infineon Technologies
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PC100-322-620 HYB39S256400/800/160CT

PC100-322-620

Abstract: 39S256 HYB39S256400/800/160CT(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM · High , : 1, 2, 4, 8 Full page burst length (optional) for sequential wrap around The HYB39S256400/800 , 1 7.00 HYB39S256400/800/160CT(L) 256MBit Synchronous DRAM Ordering Information Type Speed , 3.3V) Ground for DQ 's not connected INFINEON Technologies 2 7.00 HYB39S256400/800/160CT(L , Pinout for x4, x8 & x16 organised 256M-DRAMs INFINEON Technologies 3 7.00 HYB39S256400/800
Infineon Technologies
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39S256 HYB 39S256400CT-7.5 PC-100-322-620 256-MB SPT03928 SPT03933

39S256160T

Abstract: PC100-333-620 SIEMENS HYB39S256400/800/160T 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary , 7 8 ns The HYB39S256400/800/160T are four bank Synchronous DRAM's organized as 4 banks x 16MBit x4 , Manufacturer SIEMENS HYB39S256400/800/160AT 256 MBit Synchronous DRAM Ordering Information Type Ordering , Group 2 This Material Copyrighted By Its Respective Manufacturer SIEMENS HYB39S256400/800/160AT 256 , Group 3 This Material Copyrighted By Its Respective Manufacturer SIEMENS HYB39S256400/800/160T
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OCR Scan
39S256160T PC100-333-620 IT191 s4 marking code siemens SMD MARKING CODE A12 smd marking KH HYB39S256400/800/160T YB39S256400/800/160AT HYB39S256400/800/160AT

PC100-322-620

Abstract: Schneider NS 800 HYB39S256400/800/160CT(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM · High , Precharge Full page burst length (optional) for sequential wrap around The HYB39S256400/800/160CT(L , Technologies 1 8.00 HYB39S256400/800/160CT(L) 256MBit Synchronous DRAM Ordering Information Type , connected BA0, BA1 Bank Select INFINEON Technologies 2 8.00 HYB39S256400/800/160CT(L , Pinout for x4, x8 & x16 organised 256M-DRAMs INFINEON Technologies 3 8.00 HYB39S256400/800
Infineon Technologies
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Schneider NS 800 PC100-322 smd transistor marking ba smd transistor marking BA1 tcs Schneider SPT03910 SPT03923 SPT03925 SPT03927 SPT03911

PC133 registered reference design

Abstract: P-TSOPII-54 HYB39S256400/800/160CT(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM · High , HYB39S256400/800/160CT(L) are four bank Synchronous DRAM's organized as 4 banks x 16MBit x4, 4 banks x 8MBit , TSOPII packages. INFINEON Technologies 1 9.01 HYB39S256400/800/160CT(L) 256MBit Synchronous , Technologies 2 9.01 HYB39S256400/800/160CT(L) 256MBit Synchronous DRAM Pinouts 16 M x 16 32 M x , -DRAMs INFINEON Technologies 3 9.01 HYB39S256400/800/160CT(L) 256MBit Synchronous DRAM Column
Infineon Technologies
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39S256160T

Abstract: PC100-322-620 HYB39S256400/800/160T 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary , Controlled Precharge The HYB39S256400/800/160T are four bank Synchronous DRAM's organized as 4 banks x , available in TSOPII packages. INFINEON Technologies 1 4.99 HYB39S256400/800/160T 256MBit , Technologies 2 HYB39S256400/800/160T 256MBit Synchronous DRAM 16M x 16 32M x 8 64M x 4 VDD DQ0 , DQ9 VDDQ DQ8 VSS NC UDQM CLK CKE A12 A11 A9 A8 A7 A6 A5 A4 VSS HYB39S256400/800
Infineon Technologies
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smd CAY

MARKING CAW

Abstract: P-TSOPII-54 HYB39S256400/800/160CT(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM · High , TSOPII packages. INFINEON Technologies 1 1.00 HYB39S256400/800/160CT(L) 256MBit Synchronous , HYB39S256400/800/160CT(L) 256MBit Synchronous DRAM 16M x 16 32M x 8 64M x 4 VDD DQ0 VDDQ DQ1 DQ2 , ) Pinout for x4, x8 & x16 organised 256M-DRAMs INFINEON Technologies 3 1.00 HYB39S256400/800 , addressing) INFINEON Technologies 4 1.00 HYB39S256400/800/160CT(L) 256MBit Synchronous DRAM
Infineon Technologies
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MARKING CAW

tube az1

Abstract: smd CAY ". SMD = Surface Mounted Device Data Book 20 Dimensions in mm 12.99 HYB39S256400/800/160T , Burst Semiconductor Group 20 HYB39S256400/800/160T 256MBit Synchronous DRAM 1. Bank Activate , HYB39S256400/800/160T 256MBit Synchronous DRAM 3. Read Interrupted by a Read (Burst Length = 4, CAS , Group SPT03940 23 HYB39S256400/800/160T 256MBit Synchronous DRAM 5. Burst Write Operation , SPT03790 HYB39S256400/800/160T 256MBit Synchronous DRAM 6. Write and Read Interrupt 6.1 Write
Infineon Technologies
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tube az1 smd marking T22 smd transistor at t21 MARKING AX5 by1 SMD marking RBY 39S256400/800/160T

PC100-322-620

Abstract: PC-100-322-620 Mounted Device Data Book 20 Dimensions in mm 1.00 HYB39S256400/800/160AT 256MBit Synchronous , Semiconductor Group 20 HYB39S256400/800/160AT 256MBit Synchronous DRAM 1. Bank Activate Command Cycle , HYB39S256400/800/160AT 256MBit Synchronous DRAM 3. Read Interrupted by a Read (Burst Length = 4, CAS , Group SPT03940 23 HYB39S256400/800/160AT 256MBit Synchronous DRAM 5. Burst Write Operation , SPT03790 HYB39S256400/800/160AT 256MBit Synchronous DRAM 6. Write and Read Interrupt 6.1 Write
Infineon Technologies
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PC133-333-520 PC100-222-620 SMD MARKING CODE t15 39S256400AT-8A 39S256400/800/160AT

39S256160T

Abstract: PC100-322-620 ". SMD = Surface Mounted Device Data Book 20 Dimensions in mm 12.99 HYB39S256400/800/160T , Burst Semiconductor Group 20 HYB39S256400/800/160T 256MBit Synchronous DRAM 1. Bank Activate , HYB39S256400/800/160T 256MBit Synchronous DRAM 3. Read Interrupted by a Read (Burst Length = 4, CAS , Group SPT03940 23 HYB39S256400/800/160T 256MBit Synchronous DRAM 5. Burst Write Operation , SPT03790 HYB39S256400/800/160T 256MBit Synchronous DRAM 6. Write and Read Interrupt 6.1 Write
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SMD MARKING T20
Abstract: HYB39S256400/800/160T 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM , part for PC100 3-3-3 operation -10 part for PC66 2-2-2 operation The HYB39S256400/800/160T are four , Group 1 8.98 HYB39S256400/800/160T 256MBit Synchronous DRAM SIEMENS Ordering Information , HYB39S256400/800/160T 256MBit Synchronous DRAM SIEMENS 16M X 32M 64M VDD DQO VDDQ DQ1 DQ2 , UDQM CLK CKE A12 A11 A9 A8 A7 A6 A5 A4 VSS HYB39S256400/800/160T 256MBit Synchronous -
OCR Scan
Abstract: Device Data Book 20 Dimensions in mm 10.99 HYB39S256400/800/160AT 256MBit Synchronous DRAM Timing , HYB39S256400/800/160AT 256MBit Synchronous DRAM 1. Bank Activate Command Cycle (CAS latency = 3) T0 CLK T1 , HYB39S256400/800/160AT 256MBit Synchronous DRAM 3. Read Interrupted by a Read (Burst Length = 4, CAS latency , HYB39S256400/800/160AT 256MBit Synchronous DRAM 4 2. Minimum Read to Write Interval (Burst Length = 4, CAS , Semiconductor Group 23 HYB39S256400/800/160AT 256MBit Synchronous DRAM 5. Burst Write Operation Infineon Technologies
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SMD MARKING CODE M3

Abstract: PC100-222-620 Information". SMD = Surface Mounted Device Data Book 20 Dimensions in mm 1.00 HYB39S256400/800 , Termination of a Burst Semiconductor Group 20 HYB39S256400/800/160AT 256MBit Synchronous DRAM 1 , SPT03712 21 HYB39S256400/800/160AT 256MBit Synchronous DRAM 3. Read Interrupted by a Read , SPT03787 22 HYB39S256400/800/160AT 256MBit Synchronous DRAM 4 2. Minimum Read to Write Interval , "L" Semiconductor Group SPT03940 23 HYB39S256400/800/160AT 256MBit Synchronous DRAM 5
Infineon Technologies
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SMD MARKING CODE M3

HYB39S256400

Abstract: P-TSOPII-54 Interleave ! Programmable burst length: The HYB39S256400/800/160T four-bank synchronous DRAMs are , LVTTL Interface versions ! Plastic Packages: P-TSOPII-54 400mil. width (x4, x8, x16) ! HYB39S256400/ 800/160T are 4 banks SDR SDRAMs according to JEDEC specification ! Prepared for Double Data Rate
Infineon Technologies
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100MH 512MB Q1/99 Q2/99 Q3/99 Q1/00
Abstract: HYB39S256400/800/160T are four bank Synchronous DRAMâ'™s organized as 4 banks x 16MBit x4, 4 banks x 8MBit x8 , max per side INFINEON Technologies 19 HYB39S256400/800/160AT 256 MBit Synchronous DRAM , HYB39S256400/800/160AT 256 MBit Synchronous DRAM Mhison 3. Read Interrupted by a Read (Burst Length = 4 , ^ DIN B 0 yy d in Bi DIN B2 HYB39S256400/800/160AT 256 MBit Synchronous DRAM â , # H YB39S256400/800/160T 256MBit Synchronous DRAM Infineon 256 MBit Synchronous DRAM -
OCR Scan
YB39S256400/800/160T

TC5118160

Abstract: msm-561 Siemens TC59SM804 - HYB39S256400 - Toshiba SDRAM K4H560838 HYB39S256800 -
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HY514260 HY514264 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256