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HY62V256B

Catalog Datasheet MFG & Type PDF Document Tags

HY62U256

Abstract: HY62U256B INFORMATION Part No. HY62V256BLLJ HY62V256BLLT1 HY62V256BLLR1 HY62V256BLLJ-I HY62V256BLLT1-I , (mA) Current(uA) HY62V256B 3.3 85/100/120 2 20 HY62V256B-I 3.3 85/100/120 2 25 HY62U256B , Remark ¡É W mA ¡É sec HY62V256B HY62U256B HY62V256B-I HY62U256B-I Note 1. Stresses , ICCDR Data Retention Current HY62V256B HY62V256B-I HY62U256B HY62U256B-I Chip Deselect to , HY62V256B-(I)/HY62U256B-(I) Series 32Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V256B-
Hyundai
Original
HY62U256 HY62V256BLLT1-85 HY62V256BL HY62U256B- HY62V25B-I

HY62U256

Abstract: INFORMATION Part No. HY62V256BLLJ HY62V256BLLT1 HY62V256BLLR1 HY62V256BLLJ-I HY62V256BLLT1-1 HY62V256BLLR1-I , HY62V256B 3.3 20 3.3 85/100/120 2 25 HY62V256B-I HY62U256B 3.0 2 15 100/120/150 2 HY62U256B-I 3.0 100/120 , Unit V Remark HY62V256B HY62U256B HY62V256B-I HY62U256B-I t; t: *c w mA »sec T stg Pd , HY62V256B-{l)/HY62U256iK^ Seríes 32Kx8bit CMOS SRAM DESCRIPTION The HY62V256B-(I)/ HY62U256B , 100/120/150 100/120/150 Temp. HY62V256B-(!yHY62U256B-fl) Series ET. E.T. ET. E.T. E.T. E.T
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Abstract: 33fl HYUNDAI HY62V256B Series ORDERING INFORMATION PART NO. HY62V256BLP HY62V256BU HY62V256BLT1 HY62V256BLR1 SPEED 100/120/150/200 100/120/150/200 100/120/150/200 100/120/150/200 , HY62V256B Series -H Y U N D A I 32K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62V256B is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V256B has a data retention mode that guarantees data to -
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480M2 1DC06-11-MAY94 DG03713
Abstract: PART NO. HY82V256BLP HY62V256BLJ HY62V256BLT1 HY62V256BLR1 SPEED 100/120/150/200 100/120/150/200 100 , »HYUNDAI DESCRIPTION _ 32Kx 8-bit CMOS SRAM HY62V256B Series PRELIMINARY The HY62V256B is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V256B has a data retention mode that , voltages from 2.0 to 5.5 volt have little effect on supply current in data retention mode. The HY62V256B is -
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DC06-11-MA 060BSC 1DC06-11-MAY95 1DC06-11-MA

DC-06

Abstract: PRELIMINARY DESCRIPTION The HY62V256B is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundaiâ'™s high performance twin tub CMOS process technology. The HY62V256B has a data , retention mode. The HY62V256B is suitable for use in low voltage (2.7V - 5.5V) operation and battery , are implied. 1DC06-11-MAY95 m L|b7SQÃ"Ã" D G O b llB b l4 â  97 HY62V256B , Note: 1.H=Vih , L=Vil, X=Don't Care 4b75Gflfl OOObllM SSD 98 1DC06-11-MAY95 HY62V256B Series
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DC-06 I/02C 05QB8C DC06-11-MAY95 0319B

HY62U256

Abstract: ) HY62V256B 3.3 85/100/120 2 20 0~70(Normal) HY62V256B-I 3.3 85/100/120 2 25 -40~85(E.T.) HY62U256B 3.0 100 , TSOP-I Standard HY62V256BLLR1 85/100/120 TSOP-I Reversed HY62V256BLLJ-I 85/100/120 E.T. SOP , - 0.3 mA isb1 CMOS Standby Current HY62V256B /CS ; ~ Vcc - 0.2V LL - 1.5 20 uA HY62V256B-I LL - , ©tention Current HY62V256B Vcc=3.0V, /CS ; Ã"Vcc - 0.2V, Vss ; Vin ; Vcc - 1 15 uA HY62V256B-I - 1 20 uA , "HYUNDAI HY62V256B-(I)/HY62U256B-(I) Series 32Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V256B-
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HY62U256

Abstract: Semiconductor ·HYUNDAI HY62V256B-(n/HY62U256B-m Series ORDERING INFORMATION Part No. HY62V256BLP HY62V256BLJ HY62V256BLT1 HY62V256BLR1 HY62V256BLP-I HY62V256BLJ-I HY62V256BLT1-1 HY62V256BLR1-I HY62U256BLP , using Hyundai's high performance CMOS process technology. The HY62V256B-0)/ HY62U256B-(I) has a data , Standby No. (V) (ns) Current(mA) Current(uA) 3.3 HY62V256B 85/100/120 2 20 3.3 HY62V256B-I 85/100/120 2 25 , s e c Remark HY62V256B HY62U256B HY62V256B-I HY62U256B-I Note 1. Stresses greater than those
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62V256B- 62U256B-
Abstract: HY62V256B-(I)/HY62U256B-(I) Series ORDERING INFORMATION Part No. HY62V256BLLJ HY62V256BLLT1 HY62V256BLLR1 HY62V256BLLJ-I HY62V256BLLT1-I HY62V256BLLR1-I HY62U256BLLJ HY62U256BLLT1 HY62U256BLLR1 , HY62V256B /CS > Vcc - 0.2V LL 1.5 20 uA Standby HY62V256B-I LL 1.5 25 uA Current HY62U256B LL 1 15 uA , HY62V256B HY62V256B-I HY62U256B HY62U256B-I Chip Deselect to Data Retention Time Operating Recovery Time , HY62V256B-(I)/HY62U256B-(I) Series 32Kx8bit CMOS SRAM DESCRIPTION The HY62V256B-(I)/ HY62U256B Hyundai
Original

HY62V256B

Abstract: INFORMATION Part No. HY62V256BLLJ HY62V256BLLT1 HY62V256BLLR1 HY62V256BLLJ-I HY62V256BLLT1 -I HY62V256BLLR1 , for Data Retention ICCDR HY62V256B-(I)/HY62U256B-(I) Series tCDR tR HY62V256B HY62V256B-I , ) (V) HY62V256B 2 3.3 85/100/120 20 HY62V256B-I 2 3.3 85/100/120 25 HY62U256B 2 3.0 100/120/150 15 , to 4.6 Oto 70 -40 to 85 T stg Unit V i i i Remark HY62V256B HY62U256B HY62V256B-I HY62U256B-I , HY62V256B-(I)/HY62U256B-(I) Series ·'H Y U N D A I 32Kx8bit CMOS SRAM DESCRIPTION The
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I/03C

HY62U256

Abstract: , HY62256A-I, HY62V256, HY62V256-I, HY62256B, HY62256B-I, HY62V256B, HY62V256B-I, HY62U256B, HY62U256B-I : Except for HY6264A, HY6264A-I, HY62256A, HY62256A-I, HY62V256, HY62V256-I HY62256B, HY62256B-I, HY62V256B, HY62V256B-I, HY62U256B, HY62U256B-I (330mil SOP is marked J.) 97 SRAM DATA BOOK 3
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hy62256b

Abstract: hy6264a , HY62V256-I, HY62256B, HY62256B-I, HY62V256B, HY62V256B-I, HY62U256B, HY62U256B-I : Except for HY6264A, HY6264A-I, HY62256A, HY62256A-I, HY62V256, HY62V256-I HY62256B, HY62256B-I, HY62V256B, HY62V256B-I
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256 x 8 bit SRAM

hyundai

Abstract: 256k x8 SRAM 5V . : Except for HY6264A, HY6264A-I, HY62256A, HY62256A-I, HY62V256, HY62256B, HY62256B-I, HY62V256B : Except for HY6264A, HY6264A-I, HY62256A, HY62256A-I, HY62v256, HY62256B, HY62256B-I, HY62V256B (330mil SOP is
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hyundai 256k x8 SRAM 5V 16MX8 HY6116A 11-MAY95

HY62U256

Abstract: 128k x8 SRAM TSOP SRAM PRODUCT DESCRIPTION PART NO, PACKAGE OPTION SPEED(ns) OPERATING CURRENT (mA.MAX) 50 As of '96.3Q STANDBY CURRENT (mA,MAX) TTL 2 AVAILABILITY CMOS 1 NOW 64Kbit 8K X 8 HY6264A HY6264A-I (E T ) PDIP.SOP 7 0 /8 5 /1 0 0 256Kbit 32K X 8 Slow HY62256A HY62256A-I (E T ) HY62V256( 3.3 ) ( LV) HY62256B HY62256B-I (E T ) HY62V256B(3.3V) HY62U256B(3.0V) HY62U256B-KET) HY62V256B-I( ET) ( 3.3V) PDIP,SOP,TSOP-[ 5 5 /7 0 /8 5 /1 0 0 50 50 2 2 0.5 1 1 0.3 0.3 0.3 0.3 30
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128k x8 SRAM TSOP HY638256 HY628100A HY628100A-I HY638100 HY628400 HY67V32100

1128K

Abstract: 64K X 4 SRAM -1.32K HY62V256.32K HY62256B.32K HY62256B-1.32K HY62V256B.
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1128K 64K X 4 SRAM HY6264A-1 256K- HY62256A-1 HY628100A-1 HY62V8100A HY29F040

256KX8 SRAM 25nS

Abstract: 256Kx8bit p e ra tio n ) 2S6K-bit SRAM HY62V256B HY62V256B-I HY62U256B HY62U256B-I 512K-bit SRAM HY62U8512
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256KX8 SRAM 25nS 256Kx8bit BT 151 SRAM 64KX8 5V

Z38B

Abstract: 0D51 -MAYB4 - HY U N D A I HY62V256B Serles DC CHARACTERISTICS |Ta= D'C to 70'C, unless DlhBfWisB
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D27ID Z38B 0D51 ITD014 HY52V255B HYB2V256B HY52V256B 55/70/B5/1 A0-A14 346IH

HY62U256

Abstract: HY628400LG-I HY62V256LR1-I HY62V256BLP HY62V256BLJ HY62V256BLT1 HY62V256BLR1 HY62V256BLP-I HY62V256BLJ-I HY62V256BLT1-1 HY62V256BLR1 -I HY62U256BLP HY62U256BLJ HY62U256BLT1 HY62U256BLR1 HY62U256BLP-I HY62U256BLJ-I HY62U256BLT1-I
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HY628400LG-I HY62U16100LLR2-I HY6264AP HY6264ALP HY6264ALLP HY6264AJ HY6264ALJ HY6264ALLJ

8s100

Abstract: HY62U16100LLR2-I HY62810QALLT1 HY628400LG HY628400LLG HY628400LT2 HY628400LLT2 HY628400LR2 HY628400LLR2 HY62V256BLLJ HY62V256BLLT1 HY62V2568LLR1 HY62V256BLLJ-I HY62V256BLLT1-I 256K BIT (J2K X 8) HY62V256BLLR1-1 HY62U256BLLJ
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8s100 HY6264ALP-I HY6264ALLP-I HY6264ALJ-I HY6264ALLJ-1 HY62256AP HY62256ALP

HY628400LLG

Abstract: HY628400LG-I HY62256BLR1-I HY62256BLLR1-I HY62V256BLP HY62V256BLJ HY62V256BLT1 HY62V256BLR1 HY638256P HY638256LP HY638256J
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52-PIN 8K*8 sram HY628400LLP HY6264ALLJ-I HY628400LP-I HY628400LLP-I HY628400LLG-I HY628400LT2-I HY628400LLT2-I